Patents by Inventor Chung-Hao Tsai

Chung-Hao Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10770795
    Abstract: An antenna device includes a package and at least one antenna. The package includes at least one radio frequency (RF) die and a molding compound in contact with at least one sidewall of the RF die. The antenna has at least one conductor at least partially in the molding compound and operatively connected to the RF die.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: September 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chuei-Tang Wang, Chung-Hao Tsai, Jeng-Shien Hsieh, Wei-Heng Lin, Kuo-Chung Yee, Chen-Hua Yu
  • Patent number: 10763164
    Abstract: A package structure includes a first redistribution layer, a molding material, a semiconductor device and an inductor. The molding material is located on the first redistribution layer. The semiconductor device is molded in the molding material. The inductor penetrates through the molding material and electrically connected to the semiconductor device.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: September 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Lin Chen, Chung-Hao Tsai, Jeng-Shien Hsieh, Chuei-Tang Wang, Chen-Hua Yu, Chih-Yuan Chang
  • Patent number: 10756052
    Abstract: A method of manufacturing an integrated fan-out (InFO) package includes at least the following steps. A package array is formed. A dielectric layer having a core layer formed thereon is provided. The core layer includes a plurality of cavities penetrating through the core layer. The dielectric layer and the core layer are attached onto the package array such that the core layer is located between the dielectric layer and the package array. A plurality of first conductive patches is formed on the dielectric layer above the cavities.
    Type: Grant
    Filed: July 28, 2019
    Date of Patent: August 25, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Albert Wan, Ching-Hua Hsieh, Chung-Hao Tsai, Chuei-Tang Wang, Chao-Wen Shih, Han-Ping Pu, Chien-Ling Hwang, Pei-Hsuan Lee, Tzu-Chun Tang, Yu-Ting Chiu, Jui-Chang Kuo
  • Patent number: 10734323
    Abstract: A package structure includes at least one integrated circuit component, an insulating encapsulation, and a redistribution structure. The at least one integrated circuit component includes a semiconductor substrate, an interconnection structure disposed on the semiconductor substrate, and signal terminals and power terminals located on and electrically connecting to the interconnection structure. The interconnection structure is located between the semiconductor substrate and the signal terminals and between the semiconductor substrate and the power terminals, and where a size of the signal terminals is less than a size of the power terminals. The insulating encapsulation encapsulates the at least one integrated circuit component. The redistribution structure is located on the insulating encapsulation and electrically connected to the at least one integrated circuit component.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: August 4, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Wen Lin, Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang Wang, Che-Wei Hsu
  • Patent number: 10692817
    Abstract: A method includes embedding a die in a molding material; forming a first dielectric layer over the molding material and the die; forming a conductive line over an upper surface of the first dielectric layer facing away from the die; and forming a second dielectric layer over the first dielectric layer and the conductive line. The method further includes forming a first trench opening extending through the first dielectric layer or the second dielectric layer, where a longitudinal axis of the first trench is parallel with a longitudinal axis of the conductive line, and where no electrically conductive feature is exposed at a bottom of the first trench opening; and filling the first trench opening with an electrically conductive material to form a first ground trench.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: June 23, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Ya Huang, Chung-Hao Tsai, Chuei-Tang Wang, Chen-Hua Yu, Chih-Yuan Chang
  • Patent number: 10679968
    Abstract: A package includes a substrate, an Under-Bump Metallurgy (UBM) penetrating through the substrate, a solder region over and contacting the UBM, and an interconnect structure underlying the substrate. The interconnect structure is electrically coupled to the solder region through the UBM. A device die is underlying and bonded to the interconnect structure. The device die is electrically coupled to the solder region through the UBM and the interconnect structure. An encapsulating material encapsulates the device die therein.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: June 9, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Chung-Hao Tsai, Chuei-Tang Wang
  • Publication number: 20200173446
    Abstract: A ceiling fan includes a support unit, a stator, a rotor and a lamp. The support unit includes an axle and a magnetic disc fit around the axle. The stator is fit around the axle. The rotor has a plurality of blades rotatably mounted to the axle. The lamp includes a housing and a light emitting portion below a magnetic top face of the housing. The magnetic top face of the housing is attracted to the magnetic disc.
    Type: Application
    Filed: August 22, 2019
    Publication date: June 4, 2020
    Inventors: Alex Horng, Tso-Kuo Yin, Chung-Hao Tsai
  • Publication number: 20200174187
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a photonic die, an encapsulant and a wave guide structure. The photonic die includes a substrate and a dielectric layer. The substrate has a wave guide pattern. The dielectric layer is disposed over the substrate. The photonic die is encapsulated by the encapsulant. The wave guide structure spans over the front side of the photonic die and a top surface of the encapsulant, and penetrates the dielectric layer to be optically coupled with the wave guide pattern.
    Type: Application
    Filed: September 13, 2019
    Publication date: June 4, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Chieh Chang, Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang Wang
  • Patent number: 10607856
    Abstract: A manufacturing method of a redistribution layer is provided. The method includes the following steps. A patterned sacrificial layer is formed on a carrier. An actuate angle is formed between a side wall of the patterned sacrificial layer and the carrier. A first conductive layer is formed. The first conductive layer includes a plurality of first portions formed on the carrier and a plurality of second portions formed on the patterned sacrificial layer. The patterned sacrificial layer and the second portions of the first conductive layer are removed from the carrier. Another manufacturing method of a redistribution layer is also provided.
    Type: Grant
    Filed: June 18, 2017
    Date of Patent: March 31, 2020
    Assignee: Powertech Technology Inc.
    Inventors: Kun-Yung Huang, Chih-Fu Lung, Shih-Chi Li, Mei-Chen Lee, Chung-Hao Tsai, Chi-Liang Wang
  • Publication number: 20200091063
    Abstract: A semiconductor structure including at least one integrated circuit component is provided. The at least one integrated circuit component includes a first semiconductor substrate and a second semiconductor substrate electrically coupled to the first semiconductor substrate, wherein the first semiconductor substrate and the second semiconductor substrate are bonded through a first hybrid bonding interface, and at least one of the first semiconductor substrate or the second semiconductor substrate includes at least one first embedded capacitor.
    Type: Application
    Filed: September 19, 2018
    Publication date: March 19, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Ting Chen, Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang Wang
  • Publication number: 20200066631
    Abstract: A semiconductor chip including a die substrate, a plurality of first bonding structures, a plurality of conductive elements, at least one integrated device, a plurality of conductive posts and a protection layer is provided. The first bonding structures are disposed on the die substrate. The conductive elements are disposed on the die substrate adjacent to the first bonding structures. The integrated device is disposed on the die substrate over the first bonding structures, wherein the integrated device includes a plurality of second bonding structures and a plurality of conductive pillars, and the second bonding structures are hybrid bonded to the first bonding structures. The conductive posts are disposed on the conductive elements and surrounding the integrated device. The protection layer is encapsulating the integrated device and the conductive posts.
    Type: Application
    Filed: October 30, 2019
    Publication date: February 27, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chuei-Tang Wang, Chung-Hao Tsai, Chen-Hua Yu, Wei-Ting Chen
  • Publication number: 20200035625
    Abstract: A package includes a semiconductor package including a semiconductor die and a first insulating encapsulation, a substrate, and a second insulating encapsulation. The first insulating encapsulation encapsulates the semiconductor die. The substrate includes a redistribution circuitry, wherein the substrate is electrically coupled to the semiconductor package through the redistribution circuitry. The second insulating encapsulation is disposed on and partially covers the substrate, wherein the substrate is sandwiched between the semiconductor package and the second insulating encapsulation.
    Type: Application
    Filed: May 24, 2019
    Publication date: January 30, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chuei-Tang Wang, Chung-Hao Tsai, Chen-Hua Yu, Chun-Lin Lu, Han-Ping Pu, Kai-Chiang Wu
  • Publication number: 20200028240
    Abstract: An antenna comprises a first layer having a first redistribution layer, a feeding line, a ground connection element, and one or more antenna inputs. The antenna also comprises one or more intermediate layers over the first layer. The antenna further comprises a second layer having a second redistribution layer over the one or more intermediate layers. The antenna additionally comprises one or more through vias arranged to communicatively couple the second redistribution layer and the first redistribution layer. The antenna also comprises a short element. The antenna further comprises one or more radiator antennas within the one or more through vias, the one or more radiator antennas being in communication with the one or more antenna inputs by way of the feeding line.
    Type: Application
    Filed: September 12, 2019
    Publication date: January 23, 2020
    Inventors: Jeng-Shien Hsieh, Chung-Hao Tsai, Chuei-Tang Wang, Chen-Hua Yu
  • Publication number: 20200020627
    Abstract: A semiconductor device, an integrated fan-out package and a method of forming the same are disclosed. In some embodiments, a semiconductor device includes a substrate, a conductive layer, a passivation layer and a bump structure. The substrate has at least one electronic component therein. The conductive layer has a plurality of lines patterns over and electrically connected to the at least one electronic component. The passivation layer is over the conductive layer. The bump structure has a plurality of protruding parts penetrating through the passivation layer and electrically connected to the lines patterns of the conductive layer.
    Type: Application
    Filed: July 16, 2018
    Publication date: January 16, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang Wang, Wei-Ting Chen
  • Publication number: 20200006304
    Abstract: A method includes forming multiple photonic devices in a semiconductor wafer, forming a v-shaped groove in a first side of the semiconductor wafer, forming an opening extending through the semiconductor wafer, forming multiple conductive features within the opening, wherein the conductive features extend from the first side of the semiconductor wafer to a second side of the semiconductor wafer, forming a polymer material over the v-shaped groove, depositing a molding material within the opening, wherein the multiple conductive features are separated by the molding material, after depositing the molding material, removing the polymer material to expose the v-shaped groove, and placing an optical fiber within the v-shaped groove.
    Type: Application
    Filed: June 11, 2019
    Publication date: January 2, 2020
    Inventors: Chih-Chieh Chang, Chung-Hao Tsai, Chuei-Tang Wang, Hsing-Kuo Hsia, Chen-Hua Yu
  • Publication number: 20190393153
    Abstract: A device includes a redistribution structure, a semiconductor device on the redistribution structure, a top package over the semiconductor device, the top package including a second semiconductor device, a molding compound interposed between the redistribution structure and the top package, a set of through vias between and electrically connecting the top package to the redistribution structure, and an interconnect structure disposed within the molding compound and electrically connecting the top package to the redistribution structure, the interconnect structure including a substrate and a passive device formed in the substrate, wherein the interconnect structure is free of active devices.
    Type: Application
    Filed: February 11, 2019
    Publication date: December 26, 2019
    Inventors: Chuei-Tang Wang, Chung-Hao Tsai, Chen-Hua Yu
  • Patent number: 10504835
    Abstract: A semiconductor chip including a die substrate, a plurality of first bonding structures, a plurality of conductive elements, at least one integrated device, a plurality of conductive posts and a protection layer is provided. The first bonding structures are disposed on the die substrate. The conductive elements are disposed on the die substrate adjacent to the first bonding structures. The integrated device is disposed on the die substrate over the first bonding structures, wherein the integrated device includes a plurality of second bonding structures and a plurality of conductive pillars, and the second bonding structures are hybrid bonded to the first bonding structures. The conductive posts are disposed on the conductive elements and surrounding the integrated device. The protection layer is encapsulating the integrated device and the conductive posts.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: December 10, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chuei-Tang Wang, Chung-Hao Tsai, Chen-Hua Yu, Wei-Ting Chen
  • Publication number: 20190371781
    Abstract: Provided are a package structure and a method of manufacturing the same. The package structure includes a die, a passive device, and a package. The die has a front side and a backside opposite to each other. The package is disposed on the backside of the die. The passive device is disposed between the backside of the die and the package.
    Type: Application
    Filed: December 13, 2018
    Publication date: December 5, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Ya Huang, Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang Wang
  • Patent number: 10498009
    Abstract: An antenna comprises a first layer having a first redistribution layer, a feeding line, a ground connection element, and one or more antenna inputs. The antenna also comprises one or more intermediate layers over the first layer. The antenna further comprises a second layer having a second redistribution layer over the one or more intermediate layers. The antenna additionally comprises one or more through vias arranged to communicatively couple the second redistribution layer and the first redistribution layer. The antenna also comprises a short element. The antenna further comprises one or more radiator antennas within the one or more through vias, the one or more radiator antennas being in communication with the one or more antenna inputs by way of the feeding line.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: December 3, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jeng-Shien Hsieh, Chung-Hao Tsai, Chuei-Tang Wang, Chen-Hua Yu
  • Publication number: 20190355694
    Abstract: A method of manufacturing an integrated fan-out (InFO) package includes at least the following steps. A package array is formed. A dielectric layer having a core layer formed thereon is provided. The core layer includes a plurality of cavities penetrating through the core layer. The dielectric layer and the core layer are attached onto the package array such that the core layer is located between the dielectric layer and the package array. A plurality of first conductive patches is formed on the dielectric layer above the cavities.
    Type: Application
    Filed: July 28, 2019
    Publication date: November 21, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Albert Wan, Ching-Hua Hsieh, Chung-Hao Tsai, Chuei-Tang Wang, Chao-Wen Shih, Han-Ping Pu, Chien-Ling Hwang, Pei-Hsuan Lee, Tzu-Chun Tang, Yu-Ting Chiu, Jui-Chang Kuo