Patents by Inventor Chung-Hsing Wang
Chung-Hsing Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120054696Abstract: A method includes providing a layout of an integrated circuit design, and generating a plurality of double patterning decompositions from the layout, with each of the plurality of double patterning decompositions including patterns separated to a first mask and a second mask of a double patterning mask set. A maximum shift between the first and the second masks is determined, wherein the maximum shift is a maximum expected mask shift in a manufacturing process for implementing the layout on a wafer. For each of the plurality of double patterning decompositions, a worst-case performance value is simulated using mask shifts within a range defined by the maximum shift. The step of simulating the worst-case performance includes calculating capacitance values corresponding to mask shifts, and the capacitance values are calculated using a high-order equation or a piecewise equation.Type: ApplicationFiled: June 24, 2011Publication date: March 1, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ke-Ying Su, Chung-Hsing Wang, Jui-Feng Kuan, Hsiao-Shu Chao, Yi-Kan Cheng
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Patent number: 8117575Abstract: Apparatus is provided for performing timing analysis on a circuit. A first storage device portion stores a state dependent stage weight for each of a rising time arc and a falling time arc of each of a plurality of cells in a cell library. An adder is provided for calculating a sum of the state dependent stage weights for each of the cells that are included in a circuit path. A second storage device portion stores a table containing on chip variation (OCV) derating factors. The table is indexed by values of the sum. A total path delay is calculated for the circuit path, based on the OCV derating factor corresponding to the sum of the state dependent stage weights for the cells in the circuit path.Type: GrantFiled: August 10, 2009Date of Patent: February 14, 2012Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Lee-Chung Lu, Chung-Hsing Wang, Yuan-Te Hou
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Publication number: 20120036489Abstract: A method of designing and verifying 3D integrated circuits (3D IC) including providing a first layout corresponding to a first device of a 3D IC. The first layout includes a first interface layer. A second layout corresponding to a second device of the 3D IC is also provided. The second layout includes a second interface layer. A verification of the 3D is performed by verifying the first and second interface layers. The verification includes performing at least one of a design rule check (DRC) or a layout-versus-schematic (LVS) on the first and/or second interface layers.Type: ApplicationFiled: October 14, 2011Publication date: February 9, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")Inventors: Chung-Hsing Wang, Chih Sheng Tsai, Ying-Lin Liu, Kai-Yun Lin
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Patent number: 8060843Abstract: A method of designing a 3D integrated circuit (3D IC) including providing a first layout corresponding to a first device of a 3D IC and a second layout corresponding to a second device of a 3D IC is provided. A verification, such as LVS or DRC, may be performed not only on each device separately, but may also be performed to ensure proper connectivity between devices. The verification may be performed on a single layout file (e.g., GDS II file) including the interface layer of the first and second die. Dummy feature pattern may be determined for the 3D IC using a layout including the interface layers of the first and second devices.Type: GrantFiled: June 18, 2008Date of Patent: November 15, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Hsing Wang, Chih Sheng Tsai, Ying-Lin Liu, Kai-Yun Lin
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Patent number: 7966596Abstract: This invention discloses a method for automatically generating an integrated circuit (IC) layout, the method comprises determining a first cell height, creating a plurality of standard cells all having the first cell height, and generating the IC layout from the plurality of standard cells by placing and routing thereof.Type: GrantFiled: August 27, 2008Date of Patent: June 21, 2011Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Lee-Chung Lu, Chung-Hsing Wang, Ping Chung Li, Chun-Hui Tai, Li-Chun Tien, Gwan Sin Chang
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Publication number: 20110083115Abstract: A system and method for computer-aided design of semiconductor integrated circuit devices provides for having dummy vias beneath UBM of bump cells to prevent delamination at the bump cell sites during bonding. The dummy vias are inserted into the design and bump cell placement occurs during the floorplanning stage and prior to placement and routing of the active integrated circuit components. In this manner, a sufficiently high via density is achieved and design information on the bump cells including the dummy vias is provided to a computer-aided design, CAD, system along with program instructions for carrying out the indicated sequence of design operations.Type: ApplicationFiled: October 7, 2009Publication date: April 7, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hung-Yi LIU, Chung-Hsing WANG, Agrawal Aditya BINODKUMAR
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Publication number: 20110072405Abstract: In a method of forming an integrated circuit, a layout of a chip representation including a first intellectual property (IP) is provided. Cut lines that overlap, and extend out from, edges of the first IP, are generated. The cut lines divide the chip representation into a plurality of circuit regions. The plurality of circuit regions are shifted outward with relative to a position of the first IP to generate a space. The first IP is blown out into the space to generate a blown IP. A direct shrink is then performed.Type: ApplicationFiled: July 7, 2010Publication date: March 24, 2011Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Huang-Yu Chen, Ho Che Yu, Chung-Hsing Wang, Hsiao-Shu Chao, Yi-Kan Cheng, Lee-Chung Lu
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Patent number: 7913141Abstract: A system is disclosed for reducing current leakages in an integrated circuit (IC), the system comprises one or more separated power supply lines connecting between one or more power sources and an isolated circuitry, one or more switches on the separated power supply lines for controlling the connections between the power sources and the isolated circuitry, and one or more controllers for turning the switches on or off according to one or more predetermined conditions.Type: GrantFiled: August 16, 2006Date of Patent: March 22, 2011Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Lee-Chung Yu, Chung-Hsing Wang, Yung-Chin Hou
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Publication number: 20110035715Abstract: Apparatus is provided for performing timing analysis on a circuit. A first storage device portion stores a state dependent stage weight for each of a rising time arc and a falling time arc of each of a plurality of cells in a cell library. An adder is provided for calculating a sum of the state dependent stage weights for each of the cells that are included in a circuit path. A second storage device portion stores a table containing on chip variation (OCV) derating factors. The table is indexed by values of the sum. A total path delay is calculated for the circuit path, based on the OCV derating factor corresponding to the sum of the state dependent stage weights for the cells in the circuit path.Type: ApplicationFiled: August 10, 2009Publication date: February 10, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Lee-Chung Lu, Chung-Hsing Wang, Yuan-Te Hou
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Publication number: 20110035717Abstract: An embodiment of the present invention is a computer program product for providing an adjusted electronic representation of an integrated circuit layout. The computer program product has a medium with a computer program embodied thereon. Further, the computer program comprises computer program code for providing full node cells from a full node netlist, computer program code for scaling the full node cells to provide shrink node cells, computer program code for providing a timing performance of the full node cells and the shrink node cells, computer program code for comparing the timing performance of the full node cells to the timing performance of the shrink node cells, and computer program code for providing a first netlist.Type: ApplicationFiled: July 29, 2010Publication date: February 10, 2011Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Lee-Chung Lu, Yi-Kan Cheng, Chung-Hsing Wang, Chen-Fu Alex Huang, Hsiao-Shu Chao, Chin-Yu Chiang, Ho Che Yu, Chih Sheng Tsai, Shu Yi Ying
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Publication number: 20100259308Abstract: Circuits and methods for providing a pulsed clock signal for use with pulsed latch circuits are described. A variable pulse generator is coupled to form a pulsed clock output responsive to a control signal and a clock input signal. A feedback loop is provided with a pulse monitor and a pulse control circuit. Samples of the pulsed clock signal are taken by the pulse monitor and an output is formed in the form of a pattern. The pulse control circuit receives the output of the monitor and determines whether it matches a predetermined pattern. Adjustments are made to the control signal to adaptively adjust the pulsed clock signal. The feedback loop may operate continuously. In alternative embodiments the feedback loop may be powered down. Methods for adaptively controlling a pulsed clock signal are disclosed.Type: ApplicationFiled: January 15, 2010Publication date: October 14, 2010Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Hsing Wang, Chih-Chieh Chen, Chih Sheng Tsai, Shu Yi Ying
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Publication number: 20100253382Abstract: A system and method for observing threshold voltage variations are provided. A ring oscillator circuit comprises a plurality of inverters arranged in a sequential loop, a plurality of test circuits having devices under test, each coupled between a respective one of the inverters and a power supply. Each test circuit has a bypass field effect transistor (FET) having a first channel coupled between the power supply and a respective one of the inverters responsive to an individual enable signal, and a FET device under test having a second channel arranged in parallel to the first channel. A method is described for determining the threshold voltage of the device under test by disabling, for one of the inverters in the ring oscillator, the first FET device such that the device under test is coupled between the power supply and the respective inverter and affects the operating frequency of the ring oscillator.Type: ApplicationFiled: January 15, 2010Publication date: October 7, 2010Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Hsing Wang, Chih-Chieh Chen, Yi-Wei Chen
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Publication number: 20100242008Abstract: A method for dummy metal and dummy via insertion is provided. In one embodiment, dummy metals are inserted using a place and route tool, where the place and route tool has timing-awareness. Then, dummy vias arrays are inserted inside an overlap area of dummy metals using a design-rule-checking utility. Fine-grained dummy vias arrays are inserted in available space far away from main patterns. The dummy-patterns resulting from the inserted dummy vias are compressed using the design-rule-checking utility to reduce the size of a graphic data system file generated from the integrated circuit design. The dummy vias can be inserted with relaxed via spacing rules. The dummy metals are inserted with a constant line-end spacing between them for better process control and the maximum length of the dummy metal can be limited for smaller coupling effects. The dummy vias can have various sizes and a square or rectangular shape.Type: ApplicationFiled: March 22, 2010Publication date: September 23, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hung-Yi LIU, Chung-Hsing WANG, Chih-Chieh CHEN, Jian-Yi LI
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Patent number: 7793130Abstract: System and method for providing power to integrated circuitry with good power-on responsive time and reduced power-on transient glitches. A preferred embodiment comprises a daughter switch coupled to a circuit block, a first control circuit coupled to the daughter circuit, a second control circuit coupled to the first control circuit, and a mother circuit coupled to the circuit block and to the second control circuit. After the daughter switch is turned on by a control signal, the mother switch is not turned on until the daughter switch has discharged (charged) the voltage potential across power rails of the mother circuit to a point where glitches are minimized. The second control circuit turns on the mother circuit when the reduced voltage potential is reached, with a signal produced by the first control circuit reflects the voltage potential. Furthermore, a bypass circuit can be used to reduce leakage current.Type: GrantFiled: April 24, 2007Date of Patent: September 7, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Hsien Yang, Chung-Hsing Wang, Lee-Chung Lu, Chun-Hui Tai, Cliff Hou
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Publication number: 20100174933Abstract: A system and method for reducing active power in processors is disclosed. A method embodiment comprises the steps of determining when a particular logic block is inactive, determining the powered state of the particular logic block, isolating the particular logic block from a main processor core, and powering off the particular logic block. When the system needs the particular logic block, the method further comprises reactivating the block. A system embodiment comprises software and a processor coupled to a clock control module, an isolation control module and a header/footer module, operable to isolate a particular logic block and power off a particular logic block, thereby reducing power. Another embodiment comprises a logic module coupled to a clock by a clock gating module, an isolation module for isolating the logic module, a header/footer module for disabling power to the logic module, and a power and clock gating control module for controlling the clock gating module and the header/footer module.Type: ApplicationFiled: November 16, 2009Publication date: July 8, 2010Inventors: Lee-Chung Lu, Chung-Hsing Wang, Myron Shak, Wei-Pin Changchien, Kuo-Yin Chen, Chi Wei Hu, Kevin Hung, Wu-An Kuo
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Publication number: 20100058267Abstract: This invention discloses a method for automatically generating an integrated circuit (IC) layout, the method comprises determining a first cell height, creating a plurality of standard cells all having the first cell height, and generating the IC layout from the plurality of standard cells by placing and routing thereof.Type: ApplicationFiled: August 27, 2008Publication date: March 4, 2010Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Lee-Chung Lu, Chung-Hsing Wang, Ping Chung Li, Chun-Hui Tai, Li-Chun Tien, Gwan Sin Chang
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Publication number: 20090326873Abstract: Disclosed is a system, method, and computer-readable medium for designing a circuit and/or IC chip to be provided using an optical shrink technology node. Initial design data may be provided in a first technology node and through the use of embedding scaling factors in one or more EDA tools of the design flow, a design (e.g., mask data) can be generated for the circuit in an optical shrink technology node. Examples of EDA tools in which embedded scaling factors may be provided are simulation models and extraction tools including LPE decks and RC extraction technology files.Type: ApplicationFiled: December 19, 2008Publication date: December 31, 2009Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chung-Hsing Wang, Lee-Chung Lu, Yung-Chin Hou, Lie-Szu Juang
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Patent number: 7640520Abstract: A method for processing an integrated circuit is provided. The method includes providing a first integrated circuit having a first scale, wherein the first integrated circuit comprises a shrinkable circuit comprising a first intellectual property (IP) layout, and a non-shrinkable circuit comprising a second IP layout; and generating a second integrated circuit having a second scale smaller than the first scale. The step of generating the second integrated circuit includes shrinking the shrinkable integrated circuit to the second scale. The method further includes merging the second IP layout with the non-shrinkable circuit to generate a final integrated circuit.Type: GrantFiled: May 30, 2007Date of Patent: December 29, 2009Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Hsing Wang, Lee-Chung Lu, Cliff Hou, Lie-Szu Juang
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Publication number: 20090319968Abstract: A method of designing a 3D integrated circuit (3D IC) including providing a first layout corresponding to a first device of a 3D IC and a second layout corresponding to a second device of a 3D IC is provided. A verification, such as LVS or DRC, may be performed not only on each device separately, but may also be performed to ensure proper connectivity between devices. The verification may be performed on a single layout file (e.g., GDS II file) including the interface layer of the first and second die. Dummy feature pattern may be determined for the 3D IC using a layout including the interface layers of the first and second devices.Type: ApplicationFiled: June 18, 2008Publication date: December 24, 2009Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chung-Hsing Wang, Chih Sheng Tsai, Ying-Lin Liu, Kai-Yun Lin
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Publication number: 20090278251Abstract: This invention discloses an I/O pad structure in an integrated circuit (IC) which comprises a first vertical region in the IC including a top metal layer and one or more semiconductor devices formed thereunder, the top metal layer in the first vertical region serving as a first pad, the semiconductor devices being electrically connected to the first pad, and a second vertical region in the IC next to the first vertical region including the top metal layer and one or more through-silicon-vias (TSVs) formed thereunder, the top metal layer in the second vertical region serving as a second pad, and no semiconductor devices being formed beneath the second pad, the TSVs being electrically connected to the second pad, wherein the first and the second pad are electrically connected through at least one metal layer.Type: ApplicationFiled: May 12, 2008Publication date: November 12, 2009Inventors: Chih-Sheng Tsai, Chung-Hsing Wang