Abstract: This invention discloses a system and method for testing a plurality of state retention circuits in an integrated circuit (IC) chip, that comprises a built-in test circuit configured to invoke a clock, a save and a restore signal, and a plurality of serially connected data latches receiving the clock, save and restore signals, wherein each data latch employs one of the plurality of state retention circuits, wherein the plurality of data latches save their existing data in their corresponding state retention circuits upon an assertion of the save signal, restore the data from the plurality of state retention circuits back to their corresponding data latches upon an assertion of the restore signal, and shifting the existing data along the series of the data latches one latch a cycle of the clock signal.

Abstract: System and method for providing power to integrated circuitry with good power-on responsive time and reduced power-on transient glitches. A preferred embodiment comprises a daughter switch coupled to a circuit block, a first control circuit coupled to the daughter circuit, a second control circuit coupled to the first control circuit, and a mother circuit coupled to the circuit block and to the second control circuit. After the daughter switch is turned on by a control signal, the mother switch is not turned on until the daughter switch has discharged (charged) the voltage potential across power rails of the mother circuit to a point where glitches are minimized. The second control circuit turns on the mother circuit when the reduced voltage potential is reached, with a signal produced by the first control circuit reflects the voltage potential. Furthermore, a bypass circuit can be used to reduce leakage current.

Abstract: A method for processing an integrated circuit is provided. The method includes providing a first integrated circuit having a first scale, wherein the first integrated circuit comprises a shrinkable circuit comprising a first intellectual property (IP) layout, and a non-shrinkable circuit comprising a second IP layout; and generating a second integrated circuit having a second scale smaller than the first scale. The step of generating the second integrated circuit includes shrinking the shrinkable integrated circuit to the second scale. The method further includes merging the second IP layout with the non-shrinkable circuit to generate a final integrated circuit.

Abstract: This invention discloses a voltage level shifter, which comprises a first P-type metal-oxide-semiconductor (PMOS) transistor having a gate, a source and a bulk coupled to an input terminal, a first positive voltage power supply and a second positive voltage power supply, respectively, and a second PMOS transistor having a source, a drain and a bulk coupled to a third positive voltage power supply, an output node and the second positive voltage power supply, respectively, wherein the first and second PMOS transistors are formed in a single Nwell.

Abstract: This invention discloses a system and method for testing a plurality of state retention circuits in an integrated circuit (IC) chip, that comprises a built-in test circuit configured to invoke a clock, a save and a restore signal, and a plurality of serially connected data latches receiving the clock, save and restore signals, wherein each data latch employs one of the plurality of state retention circuits, wherein the plurality of data latches save their existing data in their corresponding state retention circuits upon an assertion of the save signal, restore the data from the plurality of state retention circuits back to their corresponding data latches upon an assertion of the restore signal, and shifting the existing data along the series of the data latches one latch a cycle of the clock signal.

Abstract: A system is disclosed for reducing current leakages in an integrated circuit (IC), the system comprises one or more separated power supply lines connecting between one or more power sources and an isolated circuitry, one or more switches on the separated power supply lines for controlling the connections between the power sources and the isolated circuitry, and one or more controllers for turning the switches on or off according to one or more predetermined conditions.

Abstract: The present invention discloses a system for reducing a leakage current of an integrated circuit coupled to a supply voltage source. The system includes a bias module, and a switch device serially coupled between the bias module and the integrated circuit. The bias module generates a bias voltage and the switch device is turned off for reducing the leakage current of the integrated circuit when the integrated circuit is in a sleep mode.

Abstract: A method is disclosed for determining an antenna ratio for an interconnect in a circuit. The interconnect may be routed through one or more connection layers and may be electrically coupled to one or more gate oxide areas. A cumulative antenna ratio for all components on each connection layer is determined by considering an antenna effect caused by each component on a predetermined connection layer with regard to the gate oxide areas coupled thereto and any components on one or more connection layers coupled between the component of the present connection layer and the gate oxide areas. In the same fashion, a top layer cumulative antenna ratio for the interconnect is determined based on the cumulative antenna ratios for the connection layers below the top layer.

Abstract: A new method to route a metal line in the layout of an integrated circuit device is achieved. The method comprises providing a layout for an integrated circuit device comprising an array of placed standard cells. Contact/via layer polygons are placed for coupling the standard cells. A line is routed in a metal layer. An antenna effect value is calculated for the line using parameters previously determined from the layout of each the standard cell. The parameters comprise gate area, diode area, metal area, and contact/via area coupled to the line. The gate area, the diode area, the metal area, and the contact/via area are segregated by metal level. The steps of routing and calculating are repeated if the antenna effect value exceeds a specified value. A method to extract parameters is disclosed.

Abstract: A method and system for the design of an electronic device adjusts the resistance and capacitance values employed in preliminary timing analysis during physical synthesis of the electronic device. The physical synthesis uses resistance and capacitance unit values to determine the listing of the component circuits. The resistance and capacitance unit values are calibrated by preliminarily placing the initially synthesized component circuits to create a listing describing physical locations of the component circuits within the electronic device. A preliminary routing of the interconnections is performed to create a listing describing a network of physical wire segments that form each interconnection of the component circuits. A timing analysis of the electronic device determines the delay created by the component circuit and the networks of physical wire segments.

Abstract: A new method has been provided whereby notch errors that can occur in placing via interconnects over layers of metal have been eliminated. A reference database contains all layout data for semiconductor device cells that are used to create the semiconductor devices. A cell layout is read from the reference database and placed on an intermediate data repository. For this cell, valid locations are determined where via connections must be established. Data for a test via are created, the device of the test via is aligned with and placed (“dropped”) over a valid location thereby creating test site. The purpose of the test site is to validate that the via device is correctly aligned with the metal and without any notch errors. Cases where notch errors occur are identified, for those cases a metal form is created whereby the surface of the metal form is identical with the surface of the notch error.