Abstract: A semiconductor structure is provided. The semiconductor structure includes metallization structure, a plurality of conductive pads, and a dielectric layer. The plurality of conductive pads is over the metallization structure. The dielectric layer is on the metallization structure and covers the conductive pad. The dielectric layer includes a first dielectric film, a second dielectric film, and a third dielectric film. The first dielectric film is on the conductive pad. The second dielectric film is on the first dielectric film. The third dielectric film is on the second dielectric film. The a refractive index of the first dielectric film is smaller than a refractive index of the second dielectric film, and the refractive index of the second dielectric film is smaller than a refractive index of the third dielectric film.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device comprises a source region and a drain region in a substrate and laterally spaced. A gate stack is over the substrate and between the source region and the drain region. The drain region includes two or more first doped regions having a first doping type in the substrate. The drain region further includes one or more second doped regions in the substrate. The first doped regions have a greater concentration of first doping type dopants than the second doped regions, and each of the second doped regions is disposed laterally between two neighboring first doped regions.

Abstract: Various embodiments of the present disclosure are directed towards a display device. The display device includes an isolation structure disposed over a semiconductor substrate. An electrode is disposed at least partially over the isolation structure. A light-emitting structure is disposed over the electrode. A conductive reflector is disposed below the isolation structure and electrically coupled to the electrode. The conductive reflector is disposed at least partially between sidewalls of the light-emitting structure. The conductive reflector comprises a non-metal-doped aluminum material.

Abstract: Various embodiments of the present disclosure are directed towards a display device. The display device includes an isolation structure disposed over a semiconductor substrate. An electrode is disposed at least partially over the isolation structure. A light-emitting structure is disposed over the electrode. A conductive reflector is disposed below the isolation structure and electrically coupled to the electrode. The conductive reflector is disposed at least partially between sidewalls of the light-emitting structure. The conductive reflector comprises a non-metal-doped aluminum material.

Abstract: A computer power supply assembly (PSA) is provided. The PSA comprises an AC/DC power supply unit (PSU) and a DC/DC converter module. The DC/DC converter module is attached to the AC/DC power supply unit via conductor which may be a conductive bridge that holds the AC/DC PSU in fixed relation to the DC/DC converter module, or may be a conductive cable with, for example, a twist connector. The DC/DC converter module is replaceable and interchangeable. Different types of DC/DC converter modules having different numbers and combinations of connectors for attachment to the electronics system devices and different wattage and efficiency can be electrically connected to the PSU via the one conductor.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method includes forming a plurality of bond pad structures over an interconnect structure on a front-side of a semiconductor body. The plurality of bond pad structures respectively have a titanium contact layer. The interconnect structure and the semiconductor body are patterned to define trenches extending into the semiconductor body. A dielectric fill material is formed within the trenches. The dielectric fill material is etched to expose the titanium contact layer prior to bonding the semiconductor body to a carrier substrate. The semiconductor body is thinned to expose the dielectric fill material along a back-side of the semiconductor body and to form a plurality of integrated chip die. The dielectric fill material is removed to separate the plurality of integrated chip die.

Abstract: Various embodiments of the present disclosure are directed towards a memory cell including a data storage structure. A top electrode overlies a bottom electrode. The data storage structure is disposed between the top electrode and the bottom electrode. The data storage structure includes a first data storage layer, a second data storage layer, and a third data storage layer. The second data storage layer is disposed between the first and third data storage layers. The second data storage layer has a lower bandgap than the third data storage layer. The first data storage layer has a lower bandgap than the second data storage layer.

Abstract: Various embodiments of the present disclosure are directed towards a memory cell including a co-doped data storage structure. A bottom electrode overlies a substrate and a top electrode overlies the bottom electrode. The data storage structure is disposed between the top and bottom electrodes. The data storage structure comprises a dielectric material doped with a first dopant and a second dopant.

Abstract: An electrical connector (100) includes an insulative housing (1), a plurality of contacts received in the insulative housing, and a first conductive member (24). The contacts include a pair of first grounding contacts (212) for transmitting grounding signal, and a pair of first signal contacts (211) for transmitting a differential signal. The pair of first grounding contacts and the pair of first signal contacts are arranged in a first row. The pair of first signal contacts is disposed between the pair of first grounding contacts. The first conductive member is electrically connected with both of the first grounding contacts in at least two different locations.

Abstract: In some embodiments, the present disclosure relates to a process tool which includes a housing that defines a vacuum chamber. A wafer chuck is in the housing, and a carrier wafer is on the wafer chuck. A structure that is used for deposition processes is arranged at a top of the housing. A camera is integrated on the wafer chuck such that the camera faces a top of the housing. The camera is configured to wirelessly capture images of the structure used for deposition processes within the housing. Outside of the housing is a wireless receiver. The wireless receiver is configured to receive the images from the camera while the vacuum chamber is sealed.

Abstract: An electrical connector assembly used in an interior of an electronic device which includes an internal printed circuit board, a chip mounted on internal printed circuit board, internal conductive pads disposed close to the chip and electrically connected to the chip, and an interface connector away from the chip and electrically connected to the external electrical connector comprises a first connector electrically connected to the internal conductive pads and a cable connecting with the first connector, the cable being able to electrically connect to the interface connector, wherein the first connector includes first elastic terminals elastically contacting the internal conductive pads.

Abstract: The inflating device has a body, a large cylinder, a small cylinder, a handle, a switching mechanism, and a switching device. The large cylinder is mounted moveably in the body and has an upper input gap, an inner bottom base, and a bottom base. The upper input gap is defined between an outer surface of a bottom end of the large cylinder and an inner surface of a first chamber of the body. The bottom base is connected with the large cylinder, is located below the inner bottom base, and has a first annular holding recess and a first O-ring. The small cylinder is mounted moveably in a second chamber of the large cylinder and has a piston base. The handle is mounted on the top end of the small cylinder. The switching mechanism is mounted on the top end of the large cylinder.

Abstract: The present invention is a pressure reducing valve comprising a valve body and a piston. The interior of the valve body has a water inlet channel, a water outlet channel, a chamber between the water inlet channel and the water outlet channel, a wall separating the chamber and the water inlet channel, and a tube disposed at the wall and connecting the chamber to the water inlet channel. The piston is positioned inside the chamber and movable between an original position and a closed position. The piston only closes off the rear opening of the tube at the closed position, wherein the valve body is an integral structure and entirely made of the hard-plastic material. The piston has an integral structure made of TPE material. The rear opening of the tube is blocked when the piston is at the closed position.

Abstract: In some embodiments, the present disclosure relates to a process tool which includes a housing that defines a vacuum chamber. A wafer chuck is in the housing and a carrier wafer is on the wafer chuck. A camera is integrated on the wafer chuck such that the camera faces a top of the housing. The camera is configured to wirelessly capture images of an object of interest within the housing. Outside of the housing is a wireless receiver. The wireless receiver is configured to receive the images from the camera while the vacuum chamber is sealed.

Abstract: The present disclosure is directed to resistive random access memory (RRAM) structures with a bottom electrode barrier stack. For example, the RRAM structure includes: (i) a bottom electrode having a conductive material and a layer stack, where the layer stack covers a bottom surface and a side surface of the conductive material and is interposed between the conductive material and an underlying conductive structure; (ii) a resistance-switching layer that is disposed on the bottom electrode and opposite to the conductive structure; and (iii) a top electrode that is disposed on the resistance-switching layer.

Abstract: An electrical connector (100) includes an insulative housing (1), a plurality of contacts received in the insulative housing, and a first conductive member (24). The contacts include a pair of first grounding contacts (212) for transmitting grounding signal, and a pair of first signal contacts (211) for transmitting a differential signal. The pair of first grounding contacts and the pair of first signal contacts are arranged in a first row. The pair of first signal contacts is disposed between the pair of first grounding contacts. The first conductive member is electrically connected with both of the first grounding contacts in at least two different locations.

Abstract: A pseudo H&E image producing method, including: inputting a grayscale interference image or a grayscale reflected image of a pathological sample to a first memory block of an information processing apparatus, and inputting a grayscale fluorescence image of the pathological sample to a second memory block of the information processing apparatus; using the information processing apparatus to perform a first color transform operation on the grayscale interference image or the grayscale reflected image to generate a first RGB image, and using the information processing apparatus to perform a second color transform operation on the grayscale fluorescence image to generate a second RGB image; and using the information processing apparatus to perform an image fusion operation and an intensity reversal operation on the first RGB image and the second RGB image to generate a pseudo H&E image. The present invention also discloses an optical system using the method.

Abstract: A multi-tank hydrogen-oxygen separation reactor is provided, including at least two hydrogen-oxygen separation reactors, and each of the hydrogen-oxygen separation reactors including an outer tank, an inner tank, a plurality of connection holes, an electrolytic solution, a first support portion, a first electrode, a first vent pipe, a second support portion, a second electrode, and a second vent pipe. The multi-tank hydrogen-oxygen separation reactor is able to enhance the efficiency of electrolyzing hydrogen and oxygen effectively and avoid explosion when hydrogen and oxygen coexist.

Abstract: The present disclosure is directed to resistive random access memory (RRAM) structures with a bottom electrode barrier stack. For example, the RRAM structure includes: (i) a bottom electrode having a conductive material and a layer stack, where the layer stack covers a bottom surface and a side surface of the conductive material and is interposed between the conductive material and an underlying conductive structure; (ii) a resistance-switching layer that is disposed on the bottom electrode and opposite to the conductive structure; and (iii) a top electrode that is disposed on the resistance-switching layer.

Abstract: A straightening apparatus includes a primary plate, a movable plate, upper and lower pressing wheels and a guiding wheel. The movable plate is movable relative to the primary plate between an open position and a closed position. The upper pressing wheels are connected to the movable plate. The lower pressing wheels are connected to the primary plate. The guiding wheel is connected to the primary plate. The upper pressing wheels are located closer to the lower pressing wheels in the closed position than the open position. The tube can be located between the upper and lower pressing wheels in the open position. The upper and lower wheels together provide a straightening passage for straightening the tube in the closed position. The tube is pressed by the guiding wheel before the tube is straightened in the straightening passage.