Abstract: A die includes: a semiconductor substrate having a front side and an opposing backside; a dielectric structure including a substrate oxide layer disposed on the front side of the semiconductor substrate and interlayer dielectric (ILD) layers disposed on the substrate oxide layer; an interconnect structure disposed in the dielectric structure; a through-silicon via (TSV) structure extending in a vertical direction from the backside of the semiconductor substrate through the front side of the semiconductor substrate, such that a first end of the TSV structure is disposed in the interconnect structure; and a TSV barrier structure including a barrier line that contacts the first end of the TSV structure, and a first seal ring disposed in the substrate oxide layer and that that surrounds the TSV structure in a lateral direction perpendicular to the vertical direction.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an interconnect structure disposed over a substrate. The interconnect structure includes a plurality of interconnect layers disposed within a dielectric structure. A bond pad structure is disposed over the interconnect structure. The bond pad structure includes a contact layer. A first masking layer including a metal-oxide is disposed over the bond pad structure. The first masking layer has interior sidewalls arranged directly over the bond pad structure to define an opening. A conductive bump is arranged within the opening and on the contact layer.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a lower conductive structure over a substrate. A data storage structure is formed on the lower conductive structure. A bandgap of the data storage structure discretely increases or decreases at least two times from a top surface of the data storage structure in a direction towards the substrate. An upper conductive structure is formed on the data storage structure.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device comprises a source region and a drain region in a substrate and laterally spaced. A gate stack is over the substrate and between the source region and the drain region. The drain region includes two or more first doped regions having a first doping type in the substrate. The drain region further includes one or more second doped regions in the substrate. The first doped regions have a greater concentration of first doping type dopants than the second doped regions, and each of the second doped regions is disposed laterally between two neighboring first doped regions.

Abstract: A cutter includes a blade, a handle, a holder, a pivot and a pin. The blade includes an aperture and a slit. The handle includes two lateral plates each of which includes an aperture and a recess. The holder includes a block formed between two lateral plates. The block is inserted in the slit when the blade is inserted in the holder. Each of the lateral plates of the holder includes a rear aperture and a front aperture. The pivot is selectively inserted in the apertures of the handle, the front apertures of the holder and the aperture of the blade to keep the holder in the handle. The pin is selectively inserted in the recesses of the handle and the rear apertures of the holder to keep the holder in a desired angle relative to the handle.

Abstract: A cutter includes a blade, a handle, a holder, a pivot and a pin. The blade includes an aperture and a slit. The handle includes two lateral plates each of which includes an aperture and a recess. The holder includes a block formed between two lateral plates. The block is inserted in the slit when the blade is inserted in the holder. Each of the lateral plates of the holder includes a rear aperture and a front aperture. The pivot is selectively inserted in the apertures of the handle, the front apertures of the holder and the aperture of the blade to keep the holder in the handle. The pin is selectively inserted in the recesses of the handle and the rear apertures of the holder to keep the holder in a desired angle relative to the handle.

Abstract: A method for manufacturing reflective structure is provided. The method includes the operations as follows. A metallization structure is received. A plurality of conductive pads are formed over the metallization structure. A plurality of dielectric stacks are formed over the conductive pads, respectively, wherein the thicknesses of the dielectric stacks are different. The dielectric stacks are isolated by forming a plurality of trenches over a plurality of intervals between each two adjacent dielectric stacks.

Abstract: An electrical connector assembly comprising: an insulative housing with a front mating slot and a rear receiving cavity; a combo contact module assembly received within the receiving cavity and including a sideband contact module sandwiched between a pair of high speed contact modules; each high speed contact module including an upper unit and a lower unit assembled with each other in a vertical direction; the upper unit and the lower unit being essentially symmetrically arranged with each other in the vertical direction with a half of pitch offset in a transverse direction; and a metallic shell; wherein each of the upper unit and the lower unit including a front subunit and a rear subunit stacked with each other in the vertical direction and retained together.

Abstract: An electrical connector includes: an insulating body; and a first row of terminals and a second row of terminals housed in the insulating body, each terminal in the first row of terminals having a tail portion, a contact portion, and a body portion, the first row of terminals including a signal terminal pair having a pair of signal terminals and a ground terminal arranged on one side of the signal terminal pair, wherein a first center distance between the contact portions of the signal terminal pair is different from a second center distance between the contact portion of the ground terminal and the contact portion of an adjacent signal terminal.

Abstract: A method for facilitating optimization of a cluster computing network for sequencing data analysis using adaptive data parallelization is provided. The method comprises the following steps. (a) A data parallelization configuration is determined, based on sequencing data and a pipeline selection, wherein the data parallelization configuration includes partition indication data indicating at least one biological information unit based on which of the sequencing data is to be partitioned.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method includes forming a plurality of bond pad structures over an interconnect structure on a front-side of a semiconductor body. The plurality of bond pad structures respectively have a titanium contact layer. The interconnect structure and the semiconductor body are patterned to define trenches extending into the semiconductor body. A dielectric fill material is formed within the trenches. The dielectric fill material is etched to expose the titanium contact layer prior to bonding the semiconductor body to a carrier substrate. The semiconductor body is thinned to expose the dielectric fill material along a back-side of the semiconductor body and to form a plurality of integrated chip die. The dielectric fill material is removed to separate the plurality of integrated chip die.

Abstract: A method for constructing an n-qubit fault tolerant encode for any k-qubit quantum gate M, in any given quantum code [n, k, C], comprising: choosing a number n?k of independent spinors Sr from the first stabilizer C and a first ordered set SC consists of the independent spinors Sr; choosing a number n?k of independent spinors ?r from a second stabilizer ? in the intrinsic coordinate and a second ordered set ?r consists of the independent spinors ?r consist; implementing an encoding Qen, wherein the encoding Qen converts the first ordered set SC to the second ordered set S?, wherein the encoding Qen is a sequential product provided by sequential operations of a number n?k of unitary operators Qr; wherein each of the unitary operator Qr is composed of a single s-rotation or a product of two s-rotations; and wherein the encoding Qen converts and maps the rth independent spinor Sr in the first ordered set SC to the rth independent spinor ?r in the second ordered set S? correspondingly; a fault tolerant action Û i

Abstract: Various embodiments of the present disclosure are directed towards a memory cell including a data storage structure. A top electrode overlies a bottom electrode. The data storage structure is disposed between the top electrode and the bottom electrode. The data storage structure includes a first data storage layer, a second data storage layer, and a third data storage layer. The second data storage layer is disposed between the first and third data storage layers. The second data storage layer has a lower bandgap than the third data storage layer. The first data storage layer has a lower bandgap than the second data storage layer.

Abstract: A semiconductor structure is provided. The semiconductor structure includes metallization structure, a plurality of conductive pads, and a dielectric layer. The plurality of conductive pads is over the metallization structure. The dielectric layer is on the metallization structure and covers the conductive pad. The dielectric layer includes a first dielectric film, a second dielectric film, and a third dielectric film. The first dielectric film is on the conductive pad. The second dielectric film is on the first dielectric film. The third dielectric film is on the second dielectric film. The a refractive index of the first dielectric film is smaller than a refractive index of the second dielectric film, and the refractive index of the second dielectric film is smaller than a refractive index of the third dielectric film.

Abstract: A cutter includes a platform, two handles, a blade, a lever, two pawls, a helical spring and a torque spring. The platform is connected to the first handle. The lever includes a ratchet formed at a rear end and a block formed on a side. The blade includes a rear end formed with a slit for receiving the block. The first pawl is pivotally connected to the second handle. The torque spring includes an end in contact with the first pawl and another end in contact with the second handle for keeping a tip of the first pawl engaged with the ratchet of the lever. The second pawl and the handles are pivotally connected to one another. A helical spring includes an end connected to the second pawl and another end connected to the lever. The tips of the pawls are alternately engaged with the ratchet.

Abstract: An electrical connector assembly comprising: an insulative housing with a front mating slot and a rear receiving cavity; a combo contact module assembly received within the receiving cavity and including a sideband contact module sandwiched between a pair of high speed contact modules; each high speed contact module including an upper unit and a lower unit assembled with each other in a vertical direction; the upper unit and the lower unit being essentially symmetrically arranged with each other in the vertical direction with a half of pitch offset in a transverse direction; and a metallic shell; wherein each of the upper unit and the lower unit including a front subunit and a rear subunit stacked with each other in the vertical direction and retained together.

Abstract: An electrical connector includes an insulating body, a first terminal group having a signal terminal pair and a ground terminal arranged on one side of the signal terminal pair, each signal terminal having a tail portion, a contact portion, and a body portion, the body portion having a covering portion and a free portion exposed to air, wherein there is a first center distance between the contact portions of the signal terminal pair, there is a second center distance between the free portions, and there is a third center distance between the covering parts, and a second terminal group forming a first mating port with the first terminal group, wherein the second center distance is smaller than the first center distance, and the third center distance is greater than the second center distance.

Abstract: In some embodiments, the present disclosure relates to a process tool which includes a housing that defines a vacuum chamber. A wafer chuck is in the housing, and a carrier wafer is on the wafer chuck. A structure that is used for deposition processes is arranged at a top of the housing. A camera is integrated on the wafer chuck such that the camera faces a top of the housing. The camera is configured to wirelessly capture images of the structure used for deposition processes within the housing. Outside of the housing is a wireless receiver. The wireless receiver is configured to receive the images from the camera while the vacuum chamber is sealed.

Abstract: The present disclosure, in some embodiments, relates to a memory device. The memory device includes a bottom electrode disposed over a lower interconnect within a lower inter-level dielectric (ILD) layer over a substrate. A data storage structure is over the bottom electrode. A first top electrode layer is disposed over the data storage structure, and a second top electrode layer is on the first top electrode layer. The second top electrode layer is less susceptible to oxidation than the first top electrode layer. A top electrode via is over and electrically coupled to the second top electrode layer.

Abstract: The present disclosure provides a method for treating Alzheimer's disease including the following steps. An effective amount of nano-micro magnetic stir bars is administered to a tissue of a subject suffered from Alzheimer's disease. A rotating magnetic field is provided to the subject, wherein each of the nano-micro magnetic stir bars rotates in the tissue correspondingly to the rotating magnetic field. A reacting step is performed for a reaction time, wherein the tissue generates a rotating microflow corresponding to a rotation of each of the nano-micro magnetic stir bars, and a plurality of amyloids are moved within the tissue along with the rotating microflow and then aggregate so as to form a plurality of amyloid aggregates. A removing step is performed, wherein the amyloid aggregates are captured and collected by phagocytes of the tissue so as to be removed from the tissue of the subject.