Abstract: Various embodiments of the present disclosure are directed towards a method for forming a memory device. The method includes forming a bottom electrode over a substrate. A data storage structure is formed on the bottom electrode. The data storage structure comprises a first atomic percentage of a first dopant and a second atomic percentage of a second dopant. The first atomic percentage is different from the second atomic percentage. A top electrode is formed on the data storage structure.

Abstract: A method of fabricating a photonic device includes: forming a photonic device structure that includes a SOI substrate, which includes a bulk substrate layer, a buried oxide layer on the bulk substrate layer and an active semiconductor layer on the buried oxide layer; forming an electrically conducting layer in electrical contact of the buried oxide layer, and forming a BEOL structure on a surface of the active silicon layer.

Abstract: The present invention provides a method of preventing or treating CNS diseases. The method comprises the step of administering to a subject in need thereof an effective amount of (i) a polymer-flavonoid conjugate, (ii) a flavonoid oligomer, or (iii) micelles having an outer shell comprising one or more polymer-flavonoid conjugates and optionally an inner shell comprising one or more flavonoid oligomer and a drug encapsulated within the shells. The present method brings therapeutic effective materials through blood-brain barrier to treat CNS diseases. The present method is effective to treat CNS diseases such as brain tumors, stroke, neurodegenerative diseases.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a substrate. A resistor overlies the substrate. The resistor comprises a first metal nitride structure, a second metal nitride structure spaced from the first metal nitride structure, and a metal structure disposed between the first metal nitride structure and the second metal nitride structure. A first dielectric structure is disposed over the substrate and the resistor.

Abstract: The present disclosure provides an image processing circuit including a neural network processor, a background processing circuit and a blending circuit. The neural network processor is configured to process input image data to determine whether the input image data has a predetermined object so as to generate to heat map. The background processing circuit blurs the input image data to generate blurred image data. The blending circuit blends the input image data and the blurred image data according to the heat map to generate output image data.

Abstract: A method of designing a multi-party system in quotient algebra partition-based homomorphic encryption (QAPHE), which is based on the framework of quotient algebra partition (QAP) and the computation of homomorphic encryption (HE), wherein the method comprises: increasing single model provider A to multiple ones, wherein the number of the multiple model providers is L and let A1?i?L and L?2; increasing single data provider B to multiple ones, wherein the number of the multiple data providers is R and let B1?j?R and R?2; and encoding plaintexts, each of which is of kj qubits, from all data providers into ciphertexts respectively; aggregating the ciphertexts by a form of tensor product and generating an encoded state for computation; and preparing a model operation to conduct the encrypted computation via an encoded operator and the encoded state in a cloud. The method can improve the security of public-key/semi-public-key system and be applied to a threshold HE or a multi-key HE to solve actual problems.

Abstract: A testing circuit for testing a universal serial bus (USB) of an electronic device includes a controller, a first switch, a pull-down resistor, a gating pull-up resistor, and a second switch. The controller provides a control signal according to a power receiving condition of the electronic device. A control terminal of the first switch is coupled to the controller. The pull-down resistor is coupled between a configuration channel pin of the USB and a first terminal of the first switch. The gating pull-up resistor is coupled between the configuration channel pin and the control terminal of the first switch. A control terminal of the second switch is coupled to the controller. A first terminal of the second switch is coupled to a second terminal of the first switch and a ground pin of the USB. A second terminal of the second switch is coupled to a reference low voltage.

Abstract: A method of constructing a procedural threshold in quotient algebra partition-based fault tolerance quantum computation, which is based on the framework of quotient algebra partition (QAP) applied in the fault tolerance quantum computation (FTQC), wherein an n-qubit fault tolerant encode of a k-qubit quantum gate M, is feasible to a threshold, wherein the method comprises: preparing a quantum code, with a stabilizer; creating an n-qubit encoding, in the quantum code, and obtaining an n-qubit fault tolerant encode of M; factorizing each encoded component, of this n-qubit fault tolerant encode; and producing a detection-correction operator by placing n-k ancilla qubits with the original system of n qubits, wherein the detection-correction operator comprises a conditional detection operator and a conditional correction operator to remove r-qubit spinor error.

Abstract: A method of fabricating a photonic device includes: forming a photonic device structure that includes a SOI substrate, which includes a bulk substrate layer, a buried oxide layer on the bulk substrate layer and an active semiconductor layer on the buried oxide layer; forming an electrically conducting layer in electrical contact of the buried oxide layer, and forming a BEOL structure on a surface of the active silicon layer.

Abstract: A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an interconnect structure over a substrate. The interconnect structure includes a plurality of interconnects disposed within a dielectric structure. A bond pad structure is over the interconnect structure, a first masking layer is over the bond pad structure, and a second masking layer is over the first masking layer. The second masking layer contacts opposing outermost sidewalls of the bond pad structure and the first masking layer. A conductive bump vertically extends through the first masking layer and the second masking layer to contact the bond pad structure.

Abstract: A three-dimensional device structure includes a die including a semiconductor substrate, an interconnect structure disposed on the semiconductor substrate, a through silicon via (TSV) structure that extends through the semiconductor substrate and electrically contacts a metal feature of the interconnect structure, and an integrated passive device (IPD) embedded in the semiconductor substrate and electrically connected to the TSV structure.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a substrate. A resistor overlies the substrate. The resistor comprises a first metal nitride structure, a second metal nitride structure spaced from the first metal nitride structure, and a metal structure disposed between the first metal nitride structure and the second metal nitride structure. A first dielectric structure is disposed over the substrate and the resistor.

Abstract: A three-dimensional device structure includes a first die including a first semiconductor substrate, a second die disposed on the first die and including a second semiconductor substrate, a dielectric encapsulation (DE) layer disposed on the first die and surrounding the second die, a redistribution layer structure disposed on the second die and the DE layer, and an integrated passive device (IPD) formed within in the DE layer and electrically connected to the first die and the redistribution layer structure.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. A first conductive structure overlies a substrate. A second conductive structure overlies the first conductive structure. A data storage structure is disposed between the first and second conductive structures. The data storage structure includes a first dielectric layer, a second dielectric layer, and a third dielectric layer. Respective bandgaps of the first, second, and third dielectric layers are different from one another.

Abstract: A three-dimensional device structure includes a first die including a first semiconductor substrate, a second die disposed on the first die and including a second semiconductor substrate, a dielectric encapsulation (DE) layer disposed on the first die and surrounding the second die, a redistribution layer structure disposed on the second die and the DE layer, and an integrated passive device (IPD) embedded in the DE layer and electrically connected to the first die and the redistribution layer structure.

Abstract: A testing circuit for testing a universal serial bus (USB) of an electronic device includes a controller, a first switch, a pull-down resistor, a gating pull-up resistor, and a second switch. The controller provides a control signal according to a power receiving condition of the electronic device. A control terminal of the first switch is coupled to the controller. The pull-down resistor is coupled between a configuration channel pin of the USB and a first terminal of the first switch. The gating pull-up resistor is coupled between the configuration channel pin and the control terminal of the first switch. A control terminal of the second switch is coupled to the controller. A first terminal of the second switch is coupled to a second terminal of the first switch and a ground pin of the USB. A second terminal of the second switch is coupled to a reference low voltage.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device comprises a source region and a drain region in a substrate and laterally spaced. A gate stack is over the substrate and between the source region and the drain region. The drain region includes two or more first doped regions having a first doping type in the substrate. The drain region further includes one or more second doped regions in the substrate. The first doped regions have a greater concentration of first doping type dopants than the second doped regions, and each of the second doped regions is disposed laterally between two neighboring first doped regions.

Abstract: An electrical connector includes: an insulating body; and a first row of terminals and a second row of terminals housed in the insulating body, each terminal in the first row of terminals having a tail portion, a contact portion, and a body portion, the first row of terminals including a signal terminal pair having a pair of signal terminals and a ground terminal arranged on one side of the signal terminal pair, wherein a first center distance between the contact portions of the signal terminal pair is different from a second center distance between the contact portion of the ground terminal and the contact portion of an adjacent signal terminal.

Abstract: An electrical connector includes an insulative housing defining a front cavity for receiving and a rear cavity, a terminal assembly assembled in the rear cavity, and a ground member. The terminal assembly includes an upper terminal module, a lower terminal module sandwiching a shielding module therebetween. Said The upper terminal module includes a pair of upper ground terminals. Said The lower terminal module includes a plurality of lower ground terminals. Said The shielding module includes a metallic shielding plate. The ground member is associated with the shielding module to mechanically and electrically connect at least one of the upper ground terminals and the lower ground terminals with the shielding plate.