Patents by Inventor Chyi-Shyuan Chern

Chyi-Shyuan Chern has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11199767
    Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: December 14, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chung-Chieh Lee, Feng Yuan Hsu, Chyi Shyuan Chern, Chi-Ming Yang, Tsiao-Chen Wu, Chun-Lin Chang
  • Patent number: 11153957
    Abstract: An electromagnetic radiation generation apparatus includes a collector, a gas supplier and a gas pipeline. The collector has a reflection surface configured to reflect an electromagnetic radiation. The collector includes a bottom portion, a perimeter portion, and a middle portion between the bottom portion and the perimeter portion. The middle portion of the collector includes a plurality of openings. The gas supplier is configured to provide a buffer gas. The gas pipeline is in communication with the gas supplier and the collector, and configured to purge the buffer gas through the openings of the middle portion to form a gas protection layer near the reflection surface of the collector. The openings of the middle portion include a plurality of holes arranged in an array including a plurality of rows of holes, or a plurality of concentric gaps.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: October 19, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tzu Jeng Hsu, Chi-Ming Yang, Chyi Shyuan Chern, Jui-Chun Peng, Heng-Hsin Liu, Chin-Hsiang Lin
  • Publication number: 20210265221
    Abstract: The present disclosure provides a method for forming a semiconductor structure, including dispensing a dehydrating chemical over a fin of a substrate, wherein the dehydrating chemical includes a first chemical, and a second chemical having a melting point greater than the melting point of the first chemical, and solidifying the dehydrating chemical.
    Type: Application
    Filed: May 7, 2021
    Publication date: August 26, 2021
    Inventors: CHUNG-CHIEH LEE, CHI-MING YANG, CHYI SHYUAN CHERN
  • Publication number: 20210217670
    Abstract: In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.
    Type: Application
    Filed: October 30, 2020
    Publication date: July 15, 2021
    Inventors: Li-Chao Yin, Hung-Bin Lin, Hsin-Hsien Wu, Chih-Ming Ke, Chyi Shyuan Chern, Ming-Hua Lo
  • Patent number: 11004746
    Abstract: The present disclosure provides a dehydrating chemical for dehydrating a semiconductor substrate under an ambient temperature, including a first chemical having a melting point below the ambient temperature, and a second chemical having a melting point greater than the melting point of the first chemical, wherein the dehydrating chemical has a melting point less than the ambient temperature by predetermined ?T0 degrees, and at least one of the first chemical and the second chemical has a saturated vapor pressure greater than a predetermined pressure PSV under 1 atm.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: May 11, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chung-Chieh Lee, Chi-Ming Yang, Chyi Shyuan Chern
  • Publication number: 20200386539
    Abstract: An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.
    Type: Application
    Filed: August 25, 2020
    Publication date: December 10, 2020
    Inventors: FENG YUAN HSU, CHI-MING YANG, CHING-HSIANG HSU, CHYI SHYUAN CHERN
  • Patent number: 10760896
    Abstract: An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: September 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Feng Yuan Hsu, Chi-Ming Yang, Ching-Hsiang Hsu, Chyi Shyuan Chern
  • Publication number: 20200168508
    Abstract: The present disclosure provides a dehydrating chemical for dehydrating a semiconductor substrate under an ambient temperature, including a first chemical having a melting point below the ambient temperature, and a second chemical having a melting point greater than the melting point of the first chemical, wherein the dehydrating chemical has a melting point less than the ambient temperature by predetermined ?T0 degrees, and at least one of the first chemical and the second chemical has a saturated vapor pressure greater than a predetermined pressure PSV under 1 atm.
    Type: Application
    Filed: November 8, 2019
    Publication date: May 28, 2020
    Inventors: CHUNG-CHIEH LEE, CHI-MING YANG, CHYI SHYUAN CHERN
  • Publication number: 20200137863
    Abstract: An electromagnetic radiation generation apparatus includes a collector, a gas supplier and a gas pipeline. The collector has a reflection surface configured to reflect an electromagnetic radiation. The collector includes a bottom portion, a perimeter portion, and a middle portion between the bottom portion and the perimeter portion. The middle portion of the collector includes a plurality of openings. The gas supplier is configured to provide a buffer gas. The gas pipeline is in communication with the gas supplier and the collector, and configured to purge the buffer gas through the openings of the middle portion to form a gas protection layer near the reflection surface of the collector. The openings of the middle portion include a plurality of holes arranged in an array including a plurality of rows of holes, or a plurality of concentric gaps.
    Type: Application
    Filed: July 8, 2019
    Publication date: April 30, 2020
    Inventors: TZU JENG HSU, CHI-MING YANG, CHYI SHYUAN CHERN, JUI-CHUN PENG, HENG-HSIN LIU, CHIN-HSIANG LIN
  • Publication number: 20200117076
    Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.
    Type: Application
    Filed: December 13, 2019
    Publication date: April 16, 2020
    Inventors: CHUNG-CHIEH LEE, FENG YUAN HSU, CHYI SHYUAN CHERN, CHI-MING YANG, TSIAO-CHEN WU, CHUN-LIN CHANG
  • Publication number: 20200072598
    Abstract: An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.
    Type: Application
    Filed: August 29, 2018
    Publication date: March 5, 2020
    Inventors: FENG YUAN HSU, CHI-MING YANG, CHING-HSIANG HSU, CHYI SHYUAN CHERN
  • Publication number: 20200070301
    Abstract: The present disclosure provides a wet chemical heating system, including a first conduit for transporting wet chemical, a dispensing head connected to the first conduit, and a radiative heating element configured to heat the wet chemical in the first conduit and positioned at an upper stream of the dispensing head.
    Type: Application
    Filed: June 21, 2019
    Publication date: March 5, 2020
    Inventors: JI JAMES CUI, CHIA-HSUN CHANG, CHIH HUNG CHEN, LIANG-GUANG CHEN, TZU KAI LIN, CHYI SHYUAN CHERN, KEITH KUANG-KUO KOAI
  • Patent number: 10509311
    Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: December 17, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chung-Chieh Lee, Feng Yuan Hsu, Chyi Shyuan Chern, Chi-Ming Yang, Tsiao-Chen Wu, Chun-Lin Chang
  • Publication number: 20190369481
    Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.
    Type: Application
    Filed: May 29, 2018
    Publication date: December 5, 2019
    Inventors: CHUNG-CHIEH LEE, FENG YUAN HSU, CHYI SHYUAN CHERN, CHI-MING YANG, TSIAO-CHEN WU, CHUN-LIN CHANG
  • Patent number: 10113233
    Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: October 30, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Lin Chang, Hsin-Hsien Wu, Zin-Chang Wei, Chi-Ming Yang, Chyi Shyuan Chern, Jun-Lin Yeh, Jih-Jse Lin, Jo Fei Wang, Ming-Yu Fan, Jong-I Mou
  • Patent number: 9864270
    Abstract: A method for manufacturing a pellicle includes: providing a supporting substrate; forming an oxide layer over the supporting substrate; forming a metal layer over the oxide layer; forming a graphene layer over the metal layer; and removing at least a portion of the supporting substrate and the oxide layer. An associated method includes: providing a supporting substrate; forming a first silicon carbide (SiC) layer or a diamond layer over the supporting substrate; forming a graphene layer over the SiC layer or the diamond layer; and removing at least a portion of the supporting substrate and the first silicon carbide (SiC) layer or the diamond layer; wherein the pellicle is at least partially transparent to extreme ultraviolet (EUV) radiation. An associated pellicle is also disclosed.
    Type: Grant
    Filed: January 15, 2016
    Date of Patent: January 9, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Jeng-Shin Ma, Tsiao-Chen Wu, Chi-Ming Yang, Chyi Shyuan Chern, Chih-Cheng Lin, Yun-Yue Lin
  • Publication number: 20170205705
    Abstract: A method for manufacturing a pellicle includes: providing a supporting substrate; forming an oxide layer over the supporting substrate; forming a metal layer over the oxide layer; forming a graphene layer over the metal layer; and removing at least a portion of the supporting substrate and the oxide layer. An associated method includes: providing a supporting substrate; forming a first silicon carbide (SiC) layer or a diamond layer over the supporting substrate; forming a graphene layer over the SiC layer or the diamond layer; and removing at least a portion of the supporting substrate and the first silicon carbide (SiC) layer or the diamond layer; wherein the pellicle is at least partially transparent to extreme ultraviolet (EUV) radiation. An associated pellicle is also disclosed.
    Type: Application
    Filed: January 15, 2016
    Publication date: July 20, 2017
    Inventors: Jeng-Shin Ma, Tsiao-Chen Wu, Chi-Ming Yang, Chyi Shyuan Chern, Chih-Cheng Lin, Yun-Yue Lin
  • Publication number: 20170022611
    Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.
    Type: Application
    Filed: April 7, 2015
    Publication date: January 26, 2017
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Lin CHANG, Hsin-Hsien WU, Zin-Chang WEI, Chi-Ming YANG, Chyi Shyuan CHERN, Jun-Lin YEH, Jih-Jse LIN, Jo Fei WANG, Ming-Yu FAN, Jong-I MOU
  • Patent number: 9379299
    Abstract: An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening. A method of fabricating an LED device includes forming a number of openings in a wafer. The method also includes coupling light-emitting diode (LED) devices to conductive carriers. The LED devices with conductive carriers at least partially fill each of the openings.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: June 28, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Hsing-Kuo Hsia, Chih-Kuang Yu, Hung-Yi Kuo, Chyi Shyuan Chern
  • Patent number: 9349712
    Abstract: The present disclosure provides one embodiment of a light-emitting structure. The light-emitting structure includes a carrier substrate having first metal features; a transparent substrate having second metal features; a plurality of light-emitting diodes (LEDs) bonded with the carrier substrate and the transparent substrate, sandwiched between the carrier substrate and the transparent substrate; and metal pillars bonded to the carrier substrate and the transparent substrate, each of the metal pillars being disposed between adjacent two of the plurality of LEDs, wherein the first metal features, the second metal features and the metal pillars are configured to electrically connect the plurality of LEDs.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: May 24, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Kuang Yu, Chyi Shyuan Chern