Abstract: A method for manufacturing a pellicle includes: providing a supporting substrate; forming an oxide layer over the supporting substrate; forming a metal layer over the oxide layer; forming a graphene layer over the metal layer; and removing at least a portion of the supporting substrate and the oxide layer. An associated method includes: providing a supporting substrate; forming a first silicon carbide (SiC) layer or a diamond layer over the supporting substrate; forming a graphene layer over the SiC layer or the diamond layer; and removing at least a portion of the supporting substrate and the first silicon carbide (SiC) layer or the diamond layer; wherein the pellicle is at least partially transparent to extreme ultraviolet (EUV) radiation. An associated pellicle is also disclosed.

Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Abstract: An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening. A method of fabricating an LED device includes forming a number of openings in a wafer. The method also includes coupling light-emitting diode (LED) devices to conductive carriers. The LED devices with conductive carriers at least partially fill each of the openings.

Abstract: The present disclosure provides one embodiment of a light-emitting structure. The light-emitting structure includes a carrier substrate having first metal features; a transparent substrate having second metal features; a plurality of light-emitting diodes (LEDs) bonded with the carrier substrate and the transparent substrate, sandwiched between the carrier substrate and the transparent substrate; and metal pillars bonded to the carrier substrate and the transparent substrate, each of the metal pillars being disposed between adjacent two of the plurality of LEDs, wherein the first metal features, the second metal features and the metal pillars are configured to electrically connect the plurality of LEDs.

Abstract: The present disclosure involves a method of fabricating a light-emitting diode (LED) wafer. The method first determines a target surface morphology for the LED wafer. The target surface morphology yields a maximum light output for LEDs on the LED wafer. The LED wafer is etched to form a roughened wafer surface. Thereafter, using a laser scanning microscope, the method investigates an actual surface morphology of the LED wafer. Afterwards, if the actual surface morphology differs from the target surface morphology beyond an acceptable limit, the method repeats the etching step one or more times. The etching is repeated by adjusting one or more etching parameters.

Abstract: A device includes: a substrate; and a doped III-V compound layer disposed over the substrate; wherein: the doped III-V compound layer includes an upper boundary; the upper boundary has a micro-roughened texture and a macro-roughened texture where the micro-roughened texture located on; and the upper boundary includes dopant ions that are not present in a remainder of the doped III-V compound layer underneath the upper boundary.

Abstract: A plurality of conductive pads are disposed on a substrate. A plurality of semiconductor dies are each disposed on a respective one of the conductive pads. A mold device is positioned over the substrate. The mold device contains a plurality of recesses that are each configured to accommodate a respective one of the semiconductor dies underneath.

Abstract: A method includes forming an opening in a substrate, and the opening completely extends through the substrate. A recast material is formed on sidewalls of the substrate exposed by the opening. A first chemical is applied in the opening to remove the recast material, wherein a residue of the first chemical remains on portions of the sidewalls after the applying of the first chemical. Moreover, A second chemical is applied in the opening to remove the residue of the first chemical, and the second chemical is different from the first chemical.

Abstract: A gate structure including a substrate and a gate dielectric layer formed over the substrate. The gate structure further includes a workfunction layer over the gate dielectric layer and spacers enclosing the gate dielectric layer and the workfunction layer. A top surface of a portion of the workfunction layer in contact with sidewalls of the spacer is a same distance from the gate dielectric layer as a top surface of a center portion of the work function layer.

Abstract: A package structure includes: a substrate having a first side and a second side opposite to the first side; a metal layer disposed over at least a portion of the second side of the substrate; a light-reflective layer disposed over the first side of the substrate; and a photonic device bonded to the light-reflective layer from the first side. A segment of the metal layer extends through the substrate from the first side to the second side, and a portion of the substrate is completely enclosed in a cross-sectional view by the metal layer. The package structure is free of a bonding wire over the second side of the substrate.

Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Abstract: The present disclosure provides one embodiment of a light-emitting structure. The light-emitting structure includes a carrier substrate having first metal features; a transparent substrate having second metal features; a plurality of light-emitting diodes (LEDs) bonded with the carrier substrate and the transparent substrate, sandwiched between the carrier substrate and the transparent substrate; and metal pillars bonded to the carrier substrate and the transparent substrate, each of the metal pillars being disposed between adjacent two of the plurality of LEDs, wherein the first metal features, the second metal features and the metal pillars are configured to electrically connect the plurality of LEDs.

Abstract: A method for forming an integrated circuit is provided. The method includes forming a gate dielectric structure over a substrate. A titanium-containing sacrificial layer is formed, contacting the gate dielectric structure. The whole titanium-containing sacrificial layer is substantially removed.

Abstract: An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening. A method of fabricating an LED device includes forming a number of openings in a wafer. The method also includes coupling light-emitting diode (LED) devices to conductive carriers. The LED devices with conductive carriers at least partially fill each of the openings.

Abstract: Two or more molded ellipsoid lenses are formed on a packaged LED die by injecting a glue material into a mold over the LED die and curing the glue material. After curing, the refractive index of the lens in contact with the LED die is greater than the refractive index of the lens not directly contacting the LED die. At least one phosphor material is incorporated into the glue material for at least one of the lenses not directly contacting the LED die. The lens directly contacting the LED die may also include one or more phosphor material. A high refractive index coating may be applied between the LED die and the lens.

Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Abstract: A shadow mask assembly includes a securing assembly configured to hold a substrate that is configured to hold a plurality of dies. The securing assembly includes a number of guide pins and a shadow mask comprising holes for the guide pins, said holes allowing the guide pins freedom of motion in one direction. The securing assembly includes a number of embedded magnets configured to secure the shadow mask to the securing assembly.

Abstract: An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening. A method of fabricating an LED device includes forming a number of openings in a wafer. The method also includes coupling light-emitting diode (LED) devices to conductive carriers. The LED devices with conductive carriers at least partially fill each of the openings.

Abstract: A light-emitting diode (LED) element includes a substrate and a GaN layer formed on the substrate. The GaN layer includes a boundary layer including a surface of the GaN opposing the substrate. The surface has a micro-roughening texture and a macro-roughening texture. The boundary layer includes at least one of As, Si, P, Ge, C, B, F, N, Sb, and Xe ions.

Abstract: The present disclosure provides one embodiment of a light-emitting structure. The light-emitting structure includes a carrier substrate having first metal features; a transparent substrate having second metal features; a plurality of light-emitting diodes (LEDs) bonded with the carrier substrate and the transparent substrate, sandwiched between the carrier substrate and the transparent substrate; and metal pillars bonded to the carrier substrate and the transparent substrate, each of the metal pillars being disposed between adjacent two of the plurality of LEDs, wherein the first metal features, the second metal features and the metal pillars are configured to electrically connect the plurality of LEDs.