Abstract: The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate having a first region and a second region; a first gate stack of an n-type field-effect transistor (FET) in the first region; and a second gate stack of a p-type FET in the second region. The first gate stack includes a high k dielectric layer on the semiconductor substrate, a first crystalline metal layer in a first orientation on the high k dielectric layer, and a conductive material layer on the first crystalline metal layer. The second gate stack includes the high k dielectric layer on the semiconductor substrate, a second crystalline metal layer in a second orientation on the high k dielectric layer, and the conductive material layer on the second crystalline metal layer.

Abstract: A method for fabricating a integrated circuit with improved performance is disclosed. The method comprises providing a substrate; forming a hard mask layer over the substrate; forming protected portions and unprotected portions of the hard mask layer; performing a first etching process, a second etching process, and a third etching process on the unprotected portions of the hard mask layer, wherein the first etching process partially removes the unprotected portions of the hard mask layer, the second etching process treats the unprotected portions of the hard mask layer, and the third etching process removes the remaining unprotected portions of the hard mask layer; and performing a fourth etching process to remove the protected portions of the hard mask layer.

Abstract: A method of fabricating a gate of a semiconductor device is provided. In an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate. An interface layer is formed on the gate dielectric layer. In an embodiment, the gate dielectric layer includes HfO2 and the interface layer includes Hf—N. A work function metal layer may be formed on the interface layer. A device is also provided.

Abstract: A retainer ring and a method of using the retainer ring are provided. The retainer ring has openings along a bottom surface. Grooves encompass the openings and extend to an interior portion of the retainer ring wherein a semiconductor wafer may be held. In operation, a semiconductor wafer is placed inside the retainer ring. As the retainer ring and the semiconductor wafer are moved relative to an underlying polishing pad, slurry is dispensed through the openings in the retainer ring. The grooves in the retainer ring allow the slurry to flow from the openings to the interior portion of the retainer ring and the semiconductor wafer.

Abstract: A retainer ring and a method of using the retainer ring are provided. The retainer ring has openings along a bottom surface. Grooves encompass the openings and extend to an interior portion of the retainer ring wherein a semiconductor wafer may be held. In operation, a semiconductor wafer is placed inside the retainer ring. As the retainer ring and the semiconductor wafer are moved relative to an underlying polishing pad, slurry is dispensed through the openings in the retainer ring. The grooves in the retainer ring allow the slurry to flow from the openings to the interior portion of the retainer ring and the semiconductor wafer.

Abstract: A retainer ring and a method of using the retainer ring are provided. The retainer ring has openings along a bottom surface. Grooves encompass the openings and extend to an interior portion of the retainer ring wherein a semiconductor wafer may be held. In operation, a semiconductor wafer is placed inside the retainer ring. As the retainer ring and the semiconductor wafer are moved relative to an underlying polishing pad, slurry is dispensed through the openings in the retainer ring. The grooves in the retainer ring allow the slurry to flow from the openings to the interior portion of the retainer ring and the semiconductor wafer.

Abstract: A system of process control is provided. The system comprises a first processing tool, a first sensor, a second processing tool, and a processor. The first processing tool processes a first workpiece. The first sensor provides real-time monitoring (RTM) data of the first processing tool while processing the first workpiece. The second processing tool processes the first workpiece subsequent to the first processing tool. The processor adjusts, according to the real-time monitoring data and a preset program, the first processing tool for processing a second workpiece, and the second processing tool for processing the first workpiece.

Abstract: An electroplating system is provided. The system comprises a reaction tank, a tube, and a video bubble detector. The reaction tank, having a first diameter, contains a plating solution. The tube, connecting to the reaction tank, comprises an inflow tube and a branch, wherein the inflow tube inputs the plating solution into the reaction tank, and the branch has an enlarged part having the first diameter. The video bubble detector, mounted on the enlarged part of the branch, detects the presence of a bubble in the plating solution flowing through the branch.

Abstract: A system of process control is provided. The system comprises a first processing tool, a first sensor, a second processing tool, and a processor. The first processing tool processes a first workpiece. The first sensor provides real-time monitoring (RTM) data of the first processing tool while processing the first workpiece. The second processing tool processes the first workpiece subsequent to the first processing tool. The processor adjusts, according to the real-time monitoring data and a preset program, the first processing tool for processing a second workpiece, and the second processing tool for processing the first workpiece.