Abstract: An operation scheme for operating stably a semiconductor nonvolatile memory device is provided. When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes. Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.

Abstract: A charge storage layer interposed between a memory gate electrode and a semiconductor substrate is formed shorter than a gate length of the memory gate electrode or a length of insulating films so as to make the overlapping amount of the charge storage layer and a source region to be less than 40 nm. Therefore, in the write state, since the movement in the transverse direction of the electrons and the holes locally existing in the charge storage layer decreases, the variation of the threshold voltage when holding a high temperature can be reduced. In addition, the effective channel length is made to be 30 nm or less so as to reduce an apparent amount of holes so that coupling of the electrons with the holes in the charge storage layer decreases; therefore, the variation of the threshold voltage when holding at room temperature can be reduced.

Abstract: A preview image of image data to be output is generated, in response to a request from an operation device, and can be displayed via the operation device. A first preview image of the image data is generated based on an output setting for outputting the image data. The first preview image is stored in a storage device. The output setting can be changed based on a changing request from the operation device. It is determined, in response to a second preview request from the operation device, after sending the first preview image, whether the first preview image is to be regenerated, based on the changed output setting. The first preview image stored in the storage device can be sent when the first preview image is not to be regenerated, for example, when a second preview image is not to be generated.

Abstract: A semiconductor device of the present invention has a first insulating film formed between a control gate electrode and a semiconductor substrate and a second insulating film formed between a memory gate electrode and the semiconductor substrate and between the control gate electrode and the memory gate electrode, the second insulating film having a charge accumulating part therein. The second insulating film has a first film, a second film serving as a charge accumulating part disposed on the first film, and a third film disposed on the second film. The third film has a sidewall film positioned between the control gate electrode and the memory gate electrode and a deposited film positioned between the memory gate electrode and the semiconductor substrate. In this structure, the distance at a corner part of the second insulating film can be increased, and electric-field concentration can be reduced.

Abstract: An image forming apparatus includes an accumulating unit to accumulate documents, a document selecting unit to receive selection of the accumulated documents to be printed, a screen displaying unit to display on a display unit a printing condition setting screen including default values for selecting plural of the accumulated documents and a list of setting items when the selection received by the document selecting unit indicates plural of the accumulated documents, a reset receiving unit to receive selection of the setting item to be changed and resetting of a default value of the selected setting item, a reset control unit to change a content of the setting item into a resetting content when the setting item is resettable or allow the content to remain unchanged when the setting item is not resettable, and a printing unit to print the accumulated document, the setting item of which is reset.

Abstract: A charge storage layer interposed between a memory gate electrode and a semiconductor substrate is formed shorter than a gate length of the memory gate electrode or a length of insulating films so as to make the overlapping amount of the charge storage layer and a source region to be less than 40 nm. Therefore, in the write state, since the movement in the transverse direction of the electrons and the holes locally existing in the charge storage layer decreases, the variation of the threshold voltage when holding a high temperature can be reduced. In addition, the effective channel length is made to be 30 nm or less so as to reduce an apparent amount of holes so that coupling of the electrons with the holes in the charge storage layer decreases; therefore, the variation of the threshold voltage when holding at room temperature can be reduced.

Abstract: An image forming apparatus includes a setting-information storage unit that stores plural pieces of print setting information each indicating a list of settings on printing, in association with logical printer names, a data receiving unit that receives PJL data, print drawing data, and a logical printer name from a client terminal, a parameter setting unit that compares settings included in the received PJL data and the settings in the print setting information that is stored in the setting-information storage unit and corresponds to the received logical printer name, to specify the settings included in the PJL data as print parameters, and a printing unit that prints the print drawing data using the specified print parameters.

Abstract: An image forming apparatus to print an image on a recording medium based on print data. The image forming apparatus includes a storing unit to store the print data, an image processing unit to perform image processing on image data included in the print data; a printing operation specification unit to specify implementation of a printing operation; a marking unit to embed marking data in the image data, a marking printing operation specification unit to specify implementation of a marking printing operation, a printing operation implementation unit to implement the printing operation or the marking printing operation, a print data determination unit to determine whether or not the print data includes a setting for the marking printing operation, and a printing operation change unit to change a printing operation performed by the printing operation implementation unit.

Abstract: An image forming apparatus, an image forming method, and a storage medium. The image forming apparatus includes a memory, a frame creator to create at least one rendering frame in the memory, a renderer to render rendering data on the at least one rendering frame based on print data, and a control device to arrange the rendering data according to a sequence of the print data in duplex printing.

Abstract: A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first and second electrodes extend in a second direction perpendicular to the first direction, the first electrode has a first contact section extending toward the second electrode in the first direction, and the second electrode has a second contact section extending toward the first electrode in the first direction. The first and second contact positions are shifted in the second direction, respectively, and the first electrode and the first contact section are electrically separated from the second electrode and the second contact section.

Abstract: An image forming apparatus includes a memory interface configured to receive an external memory, an internal memory, a reading unit, a writing unit, and an activating unit. The activating unit activates the image forming apparatus when an external memory is connected to the memory interface and model data read from the external memory by the reading unit is the same as model data about the image forming apparatus stored in the internal memory.

Abstract: One or more among a PC document receive filter, a FAX document receive filter, a read filter, and a readout filter create a report on each of the corresponding functions in a format common to the functions. A report filter changes a format of the created report as desired by the user. Therefore, when a setting for a report output process is changed, it is not necessary to change the setting with respect to each of the functions. Thus, it is possible to reduce development man-hours for the report output process.

Abstract: An emergency stop device for elevators which actuates when an abnormal speed in both ascending and descending directions of a car is detected by one governor. The emergency stop device includes an endless governor rope to perform circulation movement in synchronization with ascent and descent of the car, a governor in an upper part of the shaft that restrains circulation movement of the governor rope when the abnormal speed is detected via the governor rope, an emergency stop device body in the car that brakes the car when the abnormal speed is detected, a swinging body swingably provided in the emergency stop device body, connected to the governor rope, that rotates when the circulation movement of the governor rope is restrained, thereby causing the emergency stop device body to actuate, and a swinging body rotation mechanism which rotates the swinging body in a prescribed direction when the governor rope between the car and the governor has become slack.

Abstract: A printing control apparatus includes a print commanding unit that sends a notice of printing data and printing start command to a printing unit on sheets supplied from a normal tray or a bypass tray. The print commanding unit includes a condition determining unit that determines whether a sheet supplying condition set with respect to the printing data and a status of the printing unit satisfy a condition for the bypass tray; a checkup screen display unit that displays a checkup screen relating to the sheet supply from the bypass tray in a case where it is determined that the condition is satisfied; and a notice permitting unit that permits a notice of a printing start command in a case where a notice indicating agreement for printing is received.

Abstract: An image forming apparatus includes a storage unit that stores therein print data and first converted data obtained by reflecting a first print condition in the print data and converting the print data into a printable form; an input receiving unit that receives an input of a reprint instruction to reprint the first converted data; an acquiring unit that acquires a second print condition for reprinting the first converted data; a determining unit that determines whether the first converted data is printable in the second print condition by comparing the acquired second print condition against the first print condition; a converting unit that converts, when it is determined that the first converted data is unprintable in the second print condition, the print data into second converted data by reflecting the second print condition in the print data; a print control unit prints out the second converted data.

Abstract: An image forming apparatus includes a receiving unit; a data saving unit; a drawing data generating unit; a log storage unit that stores a processing log; an image forming unit; and a data management unit. The data management unit, when the print job is analyzed as a time designated print job; causes the data generating unit to generate the drawing data; causes the data saving unit to save the drawing data; that, when analyzed printing being enabled at the designated print time, causes the image forming unit to perform image formation based on the drawing data and causes the log storage unit to store therein a processing log; and that, when printing is analyzed as disabled at the designated print time, performs processing corresponding to a print disabled state preset and causes the log storage unit to store therein a processing log about the processing.

Abstract: An operation scheme for operating stably a semiconductor nonvolatile memory device is provided. When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes. Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.

Abstract: An operation scheme for operating stably a semiconductor nonvolatile memory device is provided. When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes. Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.

Abstract: To improve performance of a semiconductor device having a nonvolatile memory. Further to improve reliability of the semiconductor device. Furthermore, to improve performance of a semiconductor device as well as improving reliability of the semiconductor device. A plurality of memory cells each configured by a memory transistor having a floating gate and a control transistor coupled in series to the memory transistor is arranged in an array in an X direction and in a Y direction on the main surface of a semiconductor substrate. Then, a bit wire that couples drain regions of the memory transistors of the memory cells arranged in the X direction is provided in the lowermost wiring layer of a multilayer wiring structure formed over the semiconductor substrate and the bit wire is arranged to cover the whole floating gate electrode.

Abstract: A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.