Patents by Inventor Dale W. Collins
Dale W. Collins has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10121697Abstract: Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material.Type: GrantFiled: November 2, 2015Date of Patent: November 6, 2018Assignee: Micron Technology, Inc.Inventors: Dale W. Collins, Joe Lindgren
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Patent number: 10090462Abstract: Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.Type: GrantFiled: December 7, 2015Date of Patent: October 2, 2018Assignee: Micron Technology, Inc.Inventors: Durai Vishak Nirmal Ramaswamy, Lei Bi, Beth R. Cook, Dale W. Collins
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Publication number: 20180182958Abstract: Doping a storage element, a selector element, or both, of a memory cell with a dopant including one or more of aluminum (Al), zirconium (Zr), hafnium (Hf), and silicon (Si), can minimize volume or density changes in a phase change memory as well as minimize electromigration, in accordance with embodiments. In one embodiment, a memory cell includes a first electrode and a second electrode, and a storage element comprising a layer of doped phase change material between the first and second electrodes, wherein the doped phase change material includes one or more of aluminum, zirconium, hafnium, and silicon. The storage element, a selector element, or both can be doped using techniques such as cosputtering or deposition of alternating layers of a dopant layer and a storage (or selector) material.Type: ApplicationFiled: December 27, 2016Publication date: June 28, 2018Inventors: Daniel GEALY, Andrea GOTTI, Dale W. COLLINS, Swapnil A. LENGADE
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Patent number: 10008665Abstract: Doping a storage element, a selector element, or both, of a memory cell with a dopant including one or more of aluminum (Al), zirconium (Zr), hafnium (Hf), and silicon (Si), can minimize volume or density changes in a phase change memory as well as minimize electromigration, in accordance with embodiments. In one embodiment, a memory cell includes a first electrode and a second electrode, and a storage element comprising a layer of doped phase change material between the first and second electrodes, wherein the doped phase change material includes one or more of aluminum, zirconium, hafnium, and silicon. The storage element, a selector element, or both can be doped using techniques such as cosputtering or deposition of alternating layers of a dopant layer and a storage (or selector) material.Type: GrantFiled: December 27, 2016Date of Patent: June 26, 2018Inventors: Daniel Gealy, Andrea Gotti, Dale W. Collins, Swapnil A. Lengade
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Publication number: 20170331036Abstract: A semiconductor structure includes a plurality of stack structures overlying a substrate. Each stack structure includes a first chalcogenide material over a conductive material overlying the substrate, an electrode over the first chalcogenide material, a second chalcogenide material over the electrode, a liner on sidewalls of at least one of the first chalcogenide material or the second chalcogenide material, and a dielectric material over and in contact with sidewalls of the electrode and in contact with the liner. Related semiconductor devices and systems, methods of forming the semiconductor structure, semiconductor device, and systems, and methods of forming the liner in situ are disclosed.Type: ApplicationFiled: May 16, 2016Publication date: November 16, 2017Inventors: Dale W. Collins, Andrea Gotti, F. Daniel Gealy, Tuman E. Allen, Swapnil Lengade
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Patent number: 9553264Abstract: Memory cells (e.g., CBRAM cells) include an ion source material over an active material and an electrode comprising metal silicide over the ion source material. The ion source material may include at least one of a chalcogenide material and a metal. Apparatuses, such as systems and devices, include a plurality of such memory cells. Memory cells include an adhesion material of metal silicide between a ion source material and an electrode of elemental metal. Methods of forming a memory cell include forming a first electrode, forming an active material, forming an ion source material, and forming a second electrode including metal silicide over the metal ion source material. Methods of adhering a material including copper and a material including tungsten include forming a tungsten silicide material over a material including copper and treating the materials.Type: GrantFiled: June 1, 2015Date of Patent: January 24, 2017Assignee: Micron Technology, Inc.Inventors: Dale W. Collins, Marko Milojevic, Scott E. Sills, Si-Young Park
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Patent number: 9444042Abstract: Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells.Type: GrantFiled: December 1, 2015Date of Patent: September 13, 2016Assignee: Micron Technology, Inc.Inventors: Christopher W. Petz, Dale W. Collins, Scott E. Sills, Shuichiro Yasuda
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Patent number: 9431606Abstract: Some embodiments include a memory cell having a pair of electrodes, and a plurality of switching levels between the electrodes. Each switching level has an ion buffer region and a dielectric region. At least one switching level differs from another switching level in one or both of thickness and composition of the ion buffer region and/or the dielectric region.Type: GrantFiled: August 12, 2015Date of Patent: August 30, 2016Assignee: Micron Technology, Inc.Inventors: Durai Vishak Nirmal Ramaswamy, Dale W. Collins, Christopher W. Petz, Beth R. Cook
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Patent number: 9419212Abstract: Embodiments of the present disclosure describe barrier film techniques and configurations for phase-change memory elements. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements include a bottom electrode layer, a select device layer disposed on the bottom electrode layer, a middle electrode layer disposed on the select device layer, a phase-change material layer disposed on the middle electrode layer, a top electrode layer disposed on the phase-change material layer, and a barrier film comprising a group IV transition metal, a group VI transition metal, carbon (C) and nitrogen (N), the barrier film being disposed between the bottom electrode layer and the top electrode layer. Other embodiments may be described and/or claimed.Type: GrantFiled: December 5, 2014Date of Patent: August 16, 2016Assignee: INTEL CORPORATIONInventors: Christopher W. Petz, Yongjun J. Hu, Dale W. Collins, Allen McTeer
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Publication number: 20160163975Abstract: Embodiments of the present disclosure describe barrier film techniques and configurations for phase-change memory elements. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements include a bottom electrode layer, a select device layer disposed on the bottom electrode layer, a middle electrode layer disposed on the select device layer, a phase-change material layer disposed on the middle electrode layer, a top electrode layer disposed on the phase-change material layer, and a barrier film comprising a group IV transition metal, a group VI transition metal, carbon (C) and nitrogen (N), the barrier film being disposed between the bottom electrode layer and the top electrode layer. Other embodiments may be described and/or claimed.Type: ApplicationFiled: December 5, 2014Publication date: June 9, 2016Inventors: Christopher W. Petz, Yongjun J. Hu, Dale W. Collins, Allen McTeer
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Publication number: 20160093803Abstract: Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells.Type: ApplicationFiled: December 1, 2015Publication date: March 31, 2016Applicant: Micron Technology, Inc.Inventors: Christopher W. Petz, Dale W. Collins, Scott E. Sills, Shuichiro Yasuda
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Publication number: 20160086664Abstract: Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.Type: ApplicationFiled: December 7, 2015Publication date: March 24, 2016Inventors: Durai Vishak Nirmal Ramaswamy, Lei Bi, Beth R. Cook, Dale W. Collins
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Publication number: 20160056073Abstract: Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material.Type: ApplicationFiled: November 2, 2015Publication date: February 25, 2016Applicant: Micron Technology, Inc.Inventors: Dale W. Collins, Joe Lindgren
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Patent number: 9224945Abstract: Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.Type: GrantFiled: August 30, 2012Date of Patent: December 29, 2015Assignee: Micron Technology, Inc.Inventors: Durai Vishak Nirmal Ramaswamy, Lei Bi, Beth R. Cook, Dale W. Collins
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Patent number: 9209388Abstract: Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells.Type: GrantFiled: November 1, 2013Date of Patent: December 8, 2015Assignee: Micron Technology, Inc.Inventors: Christopher W. Petz, Dale W. Collins, Scott E. Sills, Shuichiro Yasuda
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Patent number: 9177917Abstract: Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material.Type: GrantFiled: August 20, 2010Date of Patent: November 3, 2015Assignee: Micron Technology, Inc.Inventors: Dale W. Collins, Joe Lindgren
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Publication number: 20150295171Abstract: Memory cells (e.g., CBRAM cells) include an ion source material over an active material and an electrode comprising metal silicide over the ion source material. The ion source material may include at least one of a chalcogenide material and a metal. Apparatuses, such as systems and devices, include a plurality of such memory cells. Memory cells include an adhesion material of metal silicide between a ion source material and an electrode of elemental metal. Methods of forming a memory cell include forming a first electrode, forming an active material, forming an ion source material, and forming a second electrode including metal silicide over the metal ion source material. Methods of adhering a material including copper and a material including tungsten include forming a tungsten silicide material over a material including copper and treating the materials.Type: ApplicationFiled: June 1, 2015Publication date: October 15, 2015Inventors: Dale W. Collins, Marko Milojevic, Scott E. Sills, Si-Young Park
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Patent number: 9093636Abstract: Electronic apparatus, systems, and methods include a resistive random access memory cell having an oxygen gradient in a variable resistive region of the resistive random access memory cell and methods of forming the resistive random access memory cell. Oxygen can be incorporated into the resistive random access memory cell by ion implantation. Additional apparatus, systems, and methods are disclosed.Type: GrantFiled: January 30, 2012Date of Patent: July 28, 2015Assignee: Micron Technology, Inc.Inventors: Swapnil Lengade, Dale W. Collins, Durai Vishak Nirmal Ramaswamy, Yongjun Jeff Hu
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Patent number: 9048415Abstract: Memory cells (e.g., CBRAM cells) include an ion source material over an active material and an electrode comprising metal silicide over the ion source material. The ion source material may include at least one of a chalcogenide material and a metal. Apparatuses, such as systems and devices, include a plurality of such memory cells. Memory cells include an adhesion material of metal silicide between a ion source material and an electrode of elemental metal. Methods of forming a memory cell include forming a first electrode, forming an active material, forming an ion source material, and forming a second electrode including metal silicide over the metal ion source material. Methods of adhering a material including copper and a material including tungsten include forming a tungsten silicide material over a material including copper and treating the materials.Type: GrantFiled: January 11, 2012Date of Patent: June 2, 2015Assignee: Micron Technology, Inc.Inventors: Dale W. Collins, Marko Milojevic, Scott E. Sills, Si-Young Park
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Publication number: 20150123065Abstract: Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells.Type: ApplicationFiled: November 1, 2013Publication date: May 7, 2015Applicant: MICRON TECHNOLOGY, INC.Inventors: Christopher W. Petz, Dale W. Collins, Scott E. Sills, Shuichiro Yasuda