Abstract: Some embodiments include a method of forming an integrated assembly. Conductive blocks are formed over a construction. Each of the conductive blocks is over a set which includes a pair of storage-element-contact-regions and a digit-line-contact-region. Each of the conductive blocks is entirely laterally surrounded by first insulative material. Central regions of the conductive blocks are removed to split each of the conductive blocks into a first conductive portion over one of the storage-element-contact-regions and a second conductive portion over another of the storage-element-contact-regions. Second insulative material is formed between the first and second conductive portions. Digit-lines are coupled with the digit-line-contact-regions, and storage-elements are coupled with the storage-element-contact-regions.

Abstract: Some embodiments include an integrated assembly having an active-region-pillar extending upwardly from a base. The active-region-pillar includes a digit-line-contact-region between a first storage-element-contact-region and a second storage-element-contact-region. A threshold-voltage-inducing-structure is adjacent a lower portion of the active-region-pillar. A first channel region includes a first portion of the active-region-pillar between the digit-line-contact-region and the first storage-element-contact-region. A second channel region includes a second portion of the active-region-pillar between the digit-line-contact-region and the second storage-element-contact-region. A first wordline is adjacent the first portion of the active-region-pillar. A second wordline is adjacent the second portion of the active-region-pillar. A digit-line is coupled with the digit-line-contact-region. First and second storage-elements are coupled with the first and second storage-element-contact-regions.

Abstract: A method for authenticating a user using a user device connected to a communications network, the method comprising an implicit phase, wherein said implicit phase comprises performing at least one task within a workflow, said at least one task necessary to move forward within said workflow; storing information associated with said performing of at least one task; comparing said stored information with a stored user profile; and determining whether said authentication of said user is successful or unsuccessful based on said comparing.

Abstract: Some embodiments include an integrated assembly having an active-region-pillar extending upwardly from a base. The active-region-pillar includes a digit-line-contact-region between a first storage-element-contact-region and a second storage-element-contact-region. A threshold-voltage-inducing-structure is adjacent a lower portion of the active-region-pillar. A first channel region includes a first portion of the active-region-pillar between the digit-line-contact-region and the first storage-element-contact-region. A second channel region includes a second portion of the active-region-pillar between the digit-line-contact-region and the second storage-element-contact-region. A first wordline is adjacent the first portion of the active-region-pillar. A second wordline is adjacent the second portion of the active-region-pillar. A digit-line is coupled with the digit-line-contact-region. First and second storage-elements are coupled with the first and second storage-element-contact-regions.

Abstract: Some embodiments include an integrated assembly having an active-region-pillar extending upwardly from a base. The active-region-pillar includes a digit-line-contact-region between a first storage-element-contact-region and a second storage-element-contact-region. A threshold-voltage-inducing-structure is adjacent a lower portion of the active-region-pillar. A first channel region includes a first portion of the active-region-pillar between the digit-line-contact-region and the first storage-element-contact-region. A second channel region includes a second portion of the active-region-pillar between the digit-line-contact-region and the second storage-element-contact-region. A first wordline is adjacent the first portion of the active-region-pillar. A second wordline is adjacent the second portion of the active-region-pillar. A digit-line is coupled with the digit-line-contact-region. First and second storage-elements are coupled with the first and second storage-element-contact-regions.

Abstract: Systems and techniques are provided for template exploration in a large-scale machine learning system. A method may include obtaining multiple base templates, each base template comprising multiple features. A template performance score may be obtained for each base template and a first base template may be selected from among the multiple base templates based on the template performance score of the first base template. Multiple cross-templates may be constructed by generating a cross-template of the selected first base template and each of the multiple base templates. Performance of a machine learning model may be tested based on each cross-template to generate a cross-template performance score for each of the cross-templates. A first cross-template may be selected from among the multiple cross-templates based on the cross-template performance score of the cross-template. Accordingly, the first cross-template may be added to the machine learning model.

Abstract: Provided are a device comprising a bit cell tile including at least two memory cells, each of the at least two memory cells including a resistive memory element, and methods of operating an array of the memory cells, each memory cell including a resistive memory element electrically coupled in series to a corresponding first transistor and to a corresponding second transistor, the first transistor including a first gate coupled to a corresponding one of a plurality of first word lines and the second transistor including a second gate coupled to a corresponding one of a plurality of second word lines, each memory cell coupled between a corresponding one of a plurality of bit lines and a corresponding one of a plurality of source lines. The methods may include applying voltages to the first word line, second word line, source line, and bit line of a memory cell selected for an operation, and resetting the resistive memory element of the memory cell in response to setting the selected bit line to ground.

Abstract: An extending hanger assembly, for a wardrobe system having an enclosure and a door pivotable between open and closed positions, includes: a base on which an article support peg is mounted for linear translation; a mechanism operative to move the article support peg linearly relative to the base; and a control link coupling the door to the mechanism, whereby, upon opening and closing of the door, the control link operates the mechanism to translate the article support peg in opposing linear directions. The mechanism operative to move the article support peg linearly relative to the base can be a scissor mechanism having a proximal end extending toward the door and a distal end extending away from the door, wherein the distal end is attached to the base, and the proximal end is attached to a traveling bracket that carries the article support peg.

Abstract: A system for implicit authentication for a mobile device associated with a user, wherein the implicit authentication is behavioral, biometric and task-based and includes at least one authentication task selected so as to leverage the user's muscle memory. The mobile device comprises a touchscreen; a transaction authentication information unit; one or more sensors coupled to the transaction authentication information unit; and an anomaly detector coupled to the transaction authentication information unit. The sensors comprise one or more touchscreen sensors coupled to the touchscreen, an accelerometer, and a gyroscope, and are used to obtain and transmit one or more sets of data to the transaction authentication information unit. The sets of data are associated with one or more performances of the authentication task by the user. The anomaly detector generates an authentication model using the one or more data sets transmitted to the transaction authentication information unit.

Abstract: An authentication method for use in a device and comprises monitoring a program behavior stream comprising a plurality of program observables that comprises a program observable. The method records the program observable and matches the recorded first program observable to a program model selected from a plurality of program models stored within a program store. A user model is selected from a plurality of user models stored within a user store corresponding to the program model. A user behavior stream corresponding to the program observable is monitored and a user observable contained in the user behavior stream is recorded. The user observable is correlated to the user model and an authentication state associated with the device is determined based on the correlating.

Abstract: A memory device may include a local bit line electrically coupled to a plurality of memory cells and a global bit line electrically coupled to the local bit line through first and second selectable parallel paths having first and second impedances, respectively. The first path may be active and the second path may be in an off state in at least one of a set operation or a forming operation. The second path may be active in a reset operation, wherein the second impedance of the second path has a lower impedance than the first impedance of the first path.

Abstract: This document describes techniques (400, 500, 600) and apparatuses (100, 700) for implementing sensor-based near-field communication (NFC) authentication. These techniques (400, 500, 600) and apparatuses (100, 700) enable a computing device (102) to detect, in a low-power state, environmental variances indicating proximity with an NFC-enabled device (104) with which to authenticate. In some embodiments, various components of a computing device (102) in a sleep state are activated to process environmental variance(s), perform authentication operations, and/or an indicate initiation of authentication operations to a user.

Abstract: Systems and techniques are provided for template exploration in a large-scale machine learning system. A method may include obtaining multiple base templates, each base template comprising multiple features. A template performance score may be obtained for each base template and a first base template may be selected from among the multiple base templates based on the template performance score of the first base template. Multiple cross-templates may be constructed by generating a cross-template of the selected first base template and each of the multiple base templates. Performance of a machine learning model may be tested based on each cross-template to generate a cross-template performance score for each of the cross-templates. A first cross-template may be selected from among the multiple cross-templates based on the cross-template performance score of the cross-template. Accordingly, the first cross-template may be added to the machine learning model.

Abstract: Some embodiments include a transistor having a semiconductor material with a trench extending downwardly therein. The semiconductor material has a first post region on one side of the trench and a second post region on an opposing side of the trench. The semiconductor material has a narrow fin region along the bottom of the trench and extending between the first and second post regions. Each of the first and second post regions has a first thickness and the narrow fin region has a second thickness, with the second thickness being less than the first thickness. Gate dielectric material is along sidewalls of the first and second post regions, along a top of the narrow fin region, and along side surfaces of the narrow fin region. Gate material is over the gate dielectric material. First and second source/drain regions are within the first and second post regions.

Abstract: An embodiment of the invention comprises a method of forming a transistor comprising forming a gate construction having an elevationally-outermost surface of conductive gate material that is lower than an elevationally-outer surface of semiconductor material that is aside and above both sides of the gate construction. Tops of the semiconductor material and the conductive gate material are covered with masking material, two pairs of two opposing sidewall surfaces of the semiconductor material are laterally exposed above both of the sides of the gate construction. After the covering, the semiconductor material that is above both of the sides of the gate construction is subjected to monolayer doping through each of the laterally-exposed two opposing sidewall surfaces of each of the two pairs and forming there-from doped source/drain regions above both of the sides of the gate construction.

Abstract: Some embodiments include an apparatus which has a wordline coupled with a transistor gate, and which has a compensator line extending along the wordline and spaced from the wordline by a dielectric region. A driver is coupled with the wordline, and a controller is coupled with the compensator line. The wordline is coupled with access transistors, and is operated at a first voltage while the access transistors are in an OFF state. The compensator line is operated at a second voltage while the wordline is at the first voltage; with the second voltage being greater than the first voltage. The wordline is operated at a third voltage while the access transistors are in an ON state, and the compensator line is operated at a fourth voltage while the wordline is at the third voltage. The third voltage may or may not be greater than the fourth voltage.

Abstract: Some embodiments include an apparatus having a transistor associated with a vertically-extending semiconductor pillar. The transistor includes an upper source/drain region within the vertically-extending semiconductor pillar, a lower source/drain region within the vertically-extending semiconductor pillar, and a channel region within the vertically-extending semiconductor pillar and between the upper and lower source/drain regions. The transistor also includes a gate along the channel region. A wordline is coupled with the gate of the transistor. A digit line is coupled with the lower source/drain region of the transistor. A programmable device is coupled with the upper source/drain region of the transistor. A body connection line is over the wordline and extends parallel to the wordline. The body connection line has a lateral edge that penetrates into the vertically-extending semiconductor material pillar. The body connection line is of a different composition than the semiconductor material pillar.

Abstract: Provided are a device comprising a bit cell tile including at least two memory cells, each of the at least two memory cells including a resistive memory element, and methods of operating an array of the memory cells, each memory cell including a resistive memory element electrically coupled in series to a corresponding first transistor and to a corresponding second transistor, the first transistor including a first gate coupled to a corresponding one of a plurality of first word lines and the second transistor including a second gate coupled to a corresponding one of a plurality of second word lines, each memory cell coupled between a corresponding one of a plurality of bit lines and a corresponding one of a plurality of source lines. The methods may include applying voltages to the first word line, second word line, source line, and bit line of a memory cell selected for an operation, and resetting the resistive memory element of the memory cell in response to setting the selected bit line to ground.

Abstract: Some embodiments include an integrated assembly which has digit-line-contact-regions laterally spaced from one another by intervening regions. Non-conductive-semiconductor-material is over the intervening regions. Openings extend through the non-conductive-semiconductor-material to the digit-line-contact-regions. Conductive-semiconductor-material-interconnects are within the openings and are coupled with the digit-line-contact-regions. Upper surfaces of the conductive-semiconductor-material-interconnects are beneath a lower surface of the non-conductive-semiconductor-material. Metal-containing-digit-lines are over the non-conductive-semiconductor-material. Conductive regions extend downwardly from the metal-containing-digit-lines to couple with the conductive-semiconductor-material-interconnects. Some embodiments include methods of forming integrated assemblies.

Abstract: A wardrobe includes a rear wall, a sidewall, and a door pivotally attached to the sidewall defining an enclosure. An articulating hanger mechanism includes a support arm pivotally attached to the sidewall, and a link device pivotally attached to the door and to the support arm. Hanger arms pivotally attached to the support arm have stowed positions at which they extend along two opposite sides of the support arm. Coupling links are pivotally attached to the hanger arms for pivoting the hanger arms from the stowed positions to deployed positions at which the hanger arms extend outward from the support arm to support a garment. Upon user action pivoting the door from the closed position, the link device automatically pivots the support arm outward from the enclosure and the coupling links pivot the hanger arms from the stowed positions to the deployed positions.