Abstract: The present disclosure provides a chip including an even area including an even through via through which an even address is received and an even redundancy through via through which an even redundancy address is received, and an odd area including an odd through via through which an odd address is received and an odd redundancy through via through which an odd redundancy address is received. In the present disclosure, the even area may include an even address selection circuit configured to, based on a chip information signal, generate a selection even address and a selection even redundancy address from the even address, the even redundancy address, the odd address, and the odd redundancy address, and an even internal address generation circuit configured to, based on an even repair signal, generate an internal even address from the selection even address and the selection even redundancy address.

Abstract: A stacked integrated circuit includes a first chip including a first through via set and a second through via set that are disposed to be symmetrical to each other in relation to a first rotating axis and including a first input and output (IO) circuit and a second IO circuit that are disposed to be asymmetrical to each other in relation to the first rotating axis and a second chip including a third through via set and a fourth through via set that are disposed to be symmetrical to each other in relation to a second rotating axis and including a third IO circuit and a fourth IO circuit that are disposed to be asymmetrical to each other in relation to the second rotating axis, the second chip being rotated around the second rotating axis and stacked on the first chip.

Abstract: A semiconductor device includes: a stack structure including gate patterns and insulating patterns; a channel layer penetrating the stack structure; a memory layer penetrating the stack structure, the memory layer surrounding the channel layer; and a select transistor connected to the channel layer. The select transistor includes: a carbon layer Schottky-joined with the channel layer; a select gate spaced apart from the carbon layer; and a gate insulating layer between the select gate and the carbon layer.

Abstract: A semiconductor memory device and methods of manufacturing and operating the same are set forth. The semiconductor memory device includes a stack structure including a plurality of interlayer insulating layers and a plurality of gate electrodes, which may be alternately stacked on a substrate, and a plurality of channel structures penetrating the stack structure in a vertical direction. Each of the plurality of channel structures includes a channel layer, a tunnel insulating layer, an emission preventing layer, and a charge storage layer, each of which vertically extends toward the substrate.

Abstract: There are provided a semiconductor memory and an operating method thereof. The semiconductor memory includes: a plurality of memory blocks each including a plurality of select transistors and a plurality of memory cells; a peripheral circuit for performing a general operation including a program operation, a read operation, and an erase operation on the plurality of memory blocks; and a control logic for controlling the peripheral circuit to operate in a heating mode in which the peripheral circuit applies heat to the plurality of memory blocks.

Abstract: A stacked semiconductor device includes at least one upper chip including a plurality of channels each including first and second pseudo-channels; and a plurality of transfer control circuits respectively corresponding to the channels and each configured to output channel commands according to a channel designation signal designating one of the first and second pseudo-channels and a location information signal indicating a location of a corresponding channel of the channels, and transmit first and second data words between the corresponding channel and a lower chip according to the channel commands.

Abstract: A memory controller that controls a memory device including a memory block includes an initial program controller configured to control the memory device to program at least one or more monitoring memory cells from among memory cells respectively connected to monitoring word lines from among a plurality of word lines connected to the memory block, a pre-read controller configured to generate a shifting information of a threshold voltage distribution of the monitoring memory cells based on a result of reading the monitoring memory cells before a read operation is performed on the memory block, and a pre-program controller configured to control the memory device to perform the read operation after applying a pre-program voltage having a voltage level determined according to the shifting information to the plurality of word lines.

Abstract: A semiconductor memory device and methods of manufacturing and operating the same are set forth. The semiconductor memory device includes a stack structure including a plurality of interlayer insulating layers and a plurality of gate electrodes, which may be alternately stacked on a substrate, and a plurality of channel structures penetrating the stack structure in a vertical direction. Each of the plurality of channel structures includes a channel layer, a tunnel insulating layer, an emission preventing layer, and a charge storage layer, each of which vertically extends toward the substrate.

Abstract: A semiconductor device includes: a first transfer path outputting a first preliminary signal; a second transfer path outputting a second preliminary signal; a third transfer path outputting a third preliminary signal; a first calibration circuit generating a first calibration code corresponding to a difference in delay values between the first transfer path and a selected transfer path having a largest delay value among the first to third transfer paths; a second calibration circuit generating a second calibration code corresponding to a difference in delay values between the second transfer path and the selected transfer path; a third calibration circuit generating a third calibration code corresponding to a difference in delay values between the third transfer path and the selected transfer path; a first delay control circuit generating a first signal; a second delay control circuit generating a second signal; and a third delay control circuit generating a third signal.

Abstract: A data processing system includes a compute blade generating a write command to store data and a read command to read the data, and a memory blade. The compute blade has a memory that stores information about performance characteristics of each of a plurality of memories, and determines priority information through which eviction of a cache line is carried out based on the stored information.

Abstract: A semiconductor device includes: a first transfer path outputting a first preliminary signal; a second transfer path outputting a second preliminary signal; a third transfer path outputting a third preliminary signal; a first calibration circuit generating a first calibration code corresponding to a difference in delay values between the first transfer path and a selected transfer path having a largest delay value among the first to third transfer paths; a second calibration circuit generating a second calibration code corresponding to a difference in delay values between the second transfer path and the selected transfer path; a third calibration circuit generating a third calibration code corresponding to a difference in delay values between the third transfer path and the selected transfer path; a first delay control circuit generating a first signal; a second delay control circuit generating a second signal; and a third delay control circuit generating a third signal.

Abstract: A film, in which a phase transition material is not applied on an entire surface thereof and a pattern form is provided so that the aesthetically superior film of which a color is not cloudy but bright may be obtained and which has a high visible light transmittance as well as superior thermochromic properties, and a smart window including the same.

Abstract: The present technology relates to an electronic device. A memory device that controls a voltage applied to each line to prevent or mitigate a channel negative boosting phenomenon during a sensing operation includes a memory block connected to a plurality of lines, a peripheral circuit configured to perform a sensing operation on selected memory cells connected to a selected word line among the plurality of lines, and control logic configured to control voltages applied to drain select lines, source select lines, and word lines between the drain select lines and the source select lines among the plurality of lines, during the sensing operation and an equalizing operation performed after the sensing operation. The control logic controls a voltage applied to an unselected drain select line according to whether a cell string is shared with a selected drain select line among the drain select lines, during the sensing operation.

Abstract: An artificial intelligence (AI) based method for controlling a multimedia device according to an embodiment of the present disclosure makes it possible to ensure accuracy in detection and interpretation of a voice command of a user by enabling an AI care device to control the volume of the multimedia device by itself or allow the user to control the volume of the multimedia device by transmitting voice guidance for volume control to the user when the AI care device does not accurately detect the voice signal of the user due to the audio signal of the multimedia device and the voice signal of the user applied to the AI care device at the same time.

Abstract: The present disclosure provides a memory controller including a state detector detecting whether the memory device is in an idle state, a program controller selecting neighboring strings that are adjacent to a string that is coupled to a memory cell, among the memory cells, on which a program operation or a read operation is performed based on detection information that indicates a state of the memory device, selecting monitoring memory cells that are coupled to at least one word line, the memory cells being a part of the neighboring strings, and controlling the memory device to perform a plurality of loops to program the monitoring memory cells, and a bad block selector selecting a memory block with the monitoring memory cells as a bad block based on a rate of increase of a threshold voltage distribution of the monitoring memory cells.

Abstract: A data processing system includes a compute blade generating a write command to store data and a read command to read the data, and a memory blade. The compute blade has a memory that stores information about performance characteristics of each of a plurality of memories, and determines priority information through which eviction of a cache line is carried out based on the stored information.

Abstract: A semiconductor memory device and methods of manufacturing and operating the same are set forth. The semiconductor memory device includes a stack structure including a plurality of interlayer insulating layers and a plurality of gate electrodes, which may be alternately stacked on a substrate, and a plurality of channel structures penetrating the stack structure in a vertical direction. Each of the plurality of channel structures includes a channel layer, a tunnel insulating layer, an emission preventing layer, and a charge storage layer, each of which vertically extends toward the substrate.

Abstract: There are provided a semiconductor memory and an operating method thereof. The semiconductor memory includes: a plurality of memory blocks each including a plurality of select transistors and a plurality of memory cells; a peripheral circuit for performing a general operation including a program operation, a read operation, and an erase operation on the plurality of memory blocks; and a control logic for controlling the peripheral circuit to operate in a heating mode in which the peripheral circuit applies heat to the plurality of memory blocks.

Abstract: A controller including a test manager configured to output a program command for performing a program operation of a memory block and a suspend command for stopping the program operation, and a memory interface configured to transmit the program command to a memory device including the memory block, and transmit the suspend command to the memory device after a set time elapses. The test manager outputs a read command for reading memory cells included in the memory block, the memory interface calculates a count value by counting data output from the memory device in response to the read command, and the test manager generates status information on the memory block according to the count value.

Abstract: A semiconductor memory device includes a gate stack structure and a plurality of channel structures. The gate stack structure includes an insulating interlayer and a gate conductive layer that are alternately stacked. The plurality of channel holes is formed in the gate stack structure. The plurality of channel holes includes a fluorine-containing layer, a first blocking layer, and a charge-trapping layer. The fluorine-containing layer is formed on surfaces of the channel holes for forming the plurality of channel structures. The first blocking layer is formed on the fluorine-containing layer along the surfaces of the channel holes. The charge-trapping layer is formed on the first blocking layer along the surfaces of the channel holes.