Abstract: A memory device with internal row hammer mitigation couples to a memory controller. The memory controller or host can assist with row hammer mitigation by sending additional refresh cycles or refresh commands. In response to an extra refresh command the memory device can perform refresh for row hammer mitigation instead of refresh for standard data integrity. The memory controller can keep track of the number of activate commands sent to the memory device, and in response to a threshold number of activate commands, the memory controller sends the additional refresh command. With the extra refresh command the memory device can refresh the potential victim rows of a potential aggressor row, instead of simply refreshing a row that has not been accessed for a period of time.

Abstract: Polymeric coated optical elements are described herein, which exhibit good optical properties, e.g., low attenuation. Some such coated optical elements comprise an optical element (e.g., an optical fiber) having an outer surface and a thermoplastic polymeric tight buffer coating on at least a portion of the outer surface of the optical element, wherein the polymer-coated optical element exhibits a first attenuation at room temperature of plus or minus about 50% the attenuation of a comparable optical element with no thermoplastic polymeric tight buffer coating thereon, and a second attenuation at room temperature after thermal cycling to a temperature of at least 170° C. that is about 2 times the first attenuation or less.

Abstract: A memory device with internal row hammer mitigation couples to a memory controller. The memory controller or host can assist with row hammer mitigation by sending additional refresh cycles or refresh commands. In response to an extra refresh command the memory device can perform refresh for row hammer mitigation instead of refresh for standard data integrity. The memory controller can keep track of the number of activate commands sent to the memory device, and in response to a threshold number of activate commands, the memory controller sends the additional refresh command. With the extra refresh command the memory device can refresh the potential victim rows of a potential aggressor row, instead of simply refreshing a row that has not been accessed for a period of time.

Abstract: A memory device is described. The memory device includes logic circuitry to perform calibrations of resistive network terminations and data drivers of the memory device while the memory device is within a self refresh mode.

Abstract: A memory device with internal row hammer mitigation couples to a memory controller. The memory controller or host can assist with row hammer mitigation by sending additional refresh cycles or refresh commands. In response to an extra refresh command the memory device can perform refresh for row hammer mitigation instead of refresh for standard data integrity. The memory controller can keep track of the number of activate commands sent to the memory device, and in response to a threshold number of activate commands, the memory controller sends the additional refresh command. With the extra refresh command the memory device can refresh the potential victim rows of a potential aggressor row, instead of simply refreshing a row that has not been accessed for a period of time.

Abstract: An apparatus is described. The apparatus includes a memory controller having an interface to communicate with a memory. The memory controller comprising logic circuitry to specify one of multiple possible write values to the memory during a write operation with multiple bits of a command that is sent on a command address bus that emanates from the interface. The memory to write any one of the possible write values into its storage cells while the memory interface is in a power saving state wherein the specified one write value is not articulated by the memory controller on a data bus of the interface as part of the write operation.

Abstract: In a memory system an interface circuit includes an interface to a memory array, and to a data signal. The circuit includes loopback circuitry to enable loopback of received data signals without having to access the data from the memory array. The circuit can be part of a memory device, a register device, or a data buffer. The circuit interfaces to a memory array of a memory device, and performs loopback functions for a host controller that can test the operation of the interface.

Abstract: Knitted components may include a first knit layer including a first yarn, a second knit layer, and a plurality of inlaid courses of a high tenacity yarn having a tenacity of at least six grams-force per denier. The plurality of inlaid courses of the high tenacity yarn may include at least three courses of high tenacity yarn, each of which may be separated from an adjacent course of the first plurality of courses of the high tenacity yarn by no more than five courses of the first yarn.

Abstract: A memory device with internal row hammer mitigation couples to a memory controller. The memory controller or host can assist with row hammer mitigation by sending additional refresh cycles or refresh commands. In response to an extra refresh command the memory device can perform refresh for row hammer mitigation instead of refresh for standard data integrity. The memory controller can keep track of the number of activate commands sent to the memory device, and in response to a threshold number of activate commands, the memory controller sends the additional refresh command. With the extra refresh command the memory device can refresh the potential victim rows of a potential aggressor row, instead of simply refreshing a row that has not been accessed for a period of time.

Abstract: A memory device is described. The memory device includes logic circuitry to perform calibrations of resistive network terminations and data drivers of the memory device while the memory device is within a self refresh mode.

Abstract: A memory subsystem triggers entry and exit of a memory device from low power mode with a chip select (CS) signal line. For a system where the command bus has no clock enable (CKE) signal line, the system can trigger low power modes with CS instead of CKE. The low power mode can include a powerdown state. The low power mode can include a self-refresh state. The memory device includes an interface to the command bus, and receives a CS signal combined with command encoding on the command bus to trigger a low power mode state change. The memory device can be configured to monitor the CS signal and selected other command signals while in low power mode. The system can send an ODT trigger while the memory device is in low power mode, even without a dedicated ODT signal line.

Abstract: Knitted components may include a first knit layer including a first yarn, a second knit layer, and a plurality of inlaid courses of a high tenacity yarn having a tenacity of at least six grams-force per denier. The plurality of inlaid courses of the high tenacity yarn may include at least three courses of high tenacity yarn, each of which may be separated from an adjacent course of the first plurality of courses of the high tenacity yarn by no more than five courses of the first yarn.

Abstract: An apparatus is described. The apparatus includes a memory controller having an interface to communicate with a memory. The memory controller comprising logic circuitry to specify one of multiple possible write values to the memory during a write operation with multiple bits of a command that is sent on a command address bus that emanates from the interface. The memory to write any one of the possible write values into its storage cells while the memory interface is in a power saving state wherein the specified one write value is not articulated by the memory controller on a data bus of the interface as part of the write operation.

Abstract: A memory device with internal row hammer mitigation couples to a memory controller. The memory controller or host can assist with row hammer mitigation by sending additional refresh cycles or refresh commands. In response to an extra refresh command the memory device can perform refresh for row hammer mitigation instead of refresh for standard data integrity. The memory controller can keep track of the number of activate commands sent to the memory device, and in response to a threshold number of activate commands, the memory controller sends the additional refresh command. With the extra refresh command the memory device can refresh the potential victim rows of a potential aggressor row, instead of simply refreshing a row that has not been accessed for a period of time.

Abstract: A memory device is described. The memory device includes logic circuitry to perform calibrations of resistive network terminations and data drivers of the memory device while the memory device is within a self refresh mode.

Abstract: An apparatus is described. The apparatus includes a memory controller having an interface to communicate with a memory. The memory controller comprising logic circuitry to specify one of multiple possible write values to the memory during a write operation with multiple bits of a command that is sent on a command address bus that emanates from the interface. The memory to write any one of the possible write values into its storage cells while the memory interface is in a power saving state wherein the specified one write value is not articulated by the memory controller on a data bus of the interface as part of the write operation.

Abstract: A mold shuttle positioning system in a glass sheet forming system includes a mold mounted on a support frame. A shuttle frame including a pair of generally parallel elongate beams for receiving and supporting the mold support frame thereon. At least one support wheel assembly including a wheel and a shuttle guide is mounted in proximity to each of the shuttle beams to position and support each one of the beams as the shuttle frame is moved to position the mold supported thereon at one of multiple desired processing locations. At least one mold guide is mounted on the support surface of one of the beams for receiving and fixing the position of the mold support frame relative to the shuttle frame to align and prevent movement of the mold support frame with respect to the shuttle frame in any direction as the mold support frame is supported thereon.

Abstract: A cache controller with a pattern recognition mechanism can identify patterns in cache lines. Instead of transmitting the entire data of the cache line to a destination device, the cache controller can generate a meta signal to represent the identified bit pattern. The cache controller transmits the meta signal to the destination in place of at least part of the cache line.

Abstract: In a memory system an interface circuit includes an interface to a memory array, and to a data signal. The circuit includes loopback circuitry to enable loopback of received data signals without having to access the data from the memory array. The circuit can be part of a memory device, a register device, or a data buffer. The circuit interfaces to a memory array of a memory device, and performs loopback functions for a host controller that can test the operation of the interface.

Abstract: A memory subsystem with memory managed with coherent access can manage page table entries to enable putting the memory in a low power state. The memory control can change a page table entry for the memory prior to triggering the memory to enter the low power state. The change to the page table entry will cause a page fault for a subsequent access to the memory. The page fault will trigger handling the access to the memory with a fault routine, avoiding synchronous delay to the memory that would occur with normal access.