Abstract: Switches for performing packet switching and associated methods are provided. An example switch includes an ingress port for receiving a packet. The switch includes a plurality of egress ports for discharging the packet from the switch. The switch includes a plurality of egress queues with each egress queue associated with one of the plurality of egress ports. The switch includes a control plane configured to determine a descriptor associated with a packet, determine a first egress port from which to discharge the at least one packet and to transmit the descriptor to an egress queue associated with the first egress port. The switch includes a descriptor crossbar configured to transmit the descriptor from the egress queue to a second egress port of the plurality of egress ports. The switch includes a packet crossbar configured to transmit the at least one packet from the ingress port to the second egress port.

Abstract: High bandwidth (e.g., > 100 GHz) modulators and methods of fabricating such are provided. An EAM comprises a waveguide mesa comprising a continuous multi-quantum well (MQW) layer; a plurality of electrode segments disposed on the waveguide mesa; and a microstrip transmission line disposed on an insulating material layer and in electrical communication with the plurality of electrode segments via conducting bridges. The waveguide mesa comprises alternating active sections and passive sections. An electrode segment of the plurality of electrodes is disposed on a respective one of the active sections. Portions of the continuous MQW layer disposed in each of the active sections having an energy gap defining an active energy gap value. Portions of the continuous MQW layer disposed in each of the passive sections having an energy gap defining an passive energy gap value. The active energy gap value is less than the passive energy gap value.

Abstract: Embodiments are disclosed for providing a serializer and/or a deserializer with redundancy using optical modulators. An example system includes an MZM structure that comprises a first waveguide interferometer arm structure and a second waveguide interferometer arm structure. The first waveguide interferometer arm structure comprises a first segmented electrode associated with at least a first electrode and a second electrode. The second waveguide interferometer arm structure comprises a second segmented electrode associated with at least a third electrode and a fourth electrode. The MZM structure is configured to convert an optical input signal into an optical output signal through application of a digital data signal to the first electrode and the third electrode, and application of a redundant digital data signal to the second electrode and the fourth electrode.

Abstract: An apparatus comprises a support structure and one or more first optical components on the support structure that communicatively couple with a first endpoint. The one or more first optical components are configured to output and receive optical signals that travel over a free space medium to establish a secure link between the first endpoint and a second endpoint.

Abstract: High bandwidth (e.g., > 100 GHz) modulators and methods of fabricating such are provided. An optical modulator comprises transmission lines configured to provide a respective radio frequency signal to a respective plurality of segmented capacitive loading electrodes; pluralities of segmented capacitive loading electrodes in electrical communication with a respective one of the transmission lines and in electrical communication with an interface layer of a semiconductor waveguide structure; and the semiconductor waveguide structure. The semiconductor waveguide structure is configured to modulate an optical signal propagating therethrough based at least in part on the respective radio frequency signal. The semiconductor waveguide structure comprises the interface layer, which (a) comprises a semiconductor material and (b) is configured such that an interface resistance of the modulator is ? 4 Ohms.

Abstract: A light emitting device, a transmitter, and a silicon photonics chip, among other things, are disclosed. An illustrative light emitting device is disclosed to include a silicon substrate, a waveguide disposed on or integrated in the silicon substrate, where the waveguide includes a wide waveguide section at a first end and a narrow waveguide section at a second end, a first metal pad disposed over the wide waveguide section and at least partially across the first end of the waveguide, and a second metal pad disposed over the wide waveguide section, distanced away from the first metal pad. Electrical current passing between the first metal pad and the second metal pad may cause light to be produced in the wide waveguide section and the light produced in the wide waveguide section is at least partially reflected by the first metal pad and directed to the narrow waveguide section for transmission.

Abstract: Embodiments are disclosed for a quantum key distribution enabled intra-datacenter network. An example system includes a first vertical cavity surface emitting laser (VCSEL), a second VCSEL and a network interface controller. The first VCSEL is configured to emit a first optical signal associated with data. The second VCSEL is configured to emit a second optical signal associated with quantum key distribution (QKD). Furthermore, the network interface controller is configured to manage transmission of the first optical signal associated with the first VCSEL and the second optical signal associated with the second VCSEL via an optical communication channel coupled to a network interface module.

Abstract: Embodiments are disclosed for facilitating an end-to-end link channel with one or more lookup tables for equalization. An example system includes a first transceiver and a second transceiver. The first transceiver includes a clock data recovery (CDR) circuit configured to receive communication data from a switch and to manage a lookup table associated with equalization of the communication data. The first transceiver also includes a first driver circuit communicatively coupled to the CDR circuit and configured to generate an electrical signal associated with the communication data. The second transceiver includes a second driver circuit, communicatively coupled to the first transceiver, that is configured to receive the electrical signal from the first transceiver and to modulate a laser source based on the electrical signal to generate an optical signal via the laser source.

Abstract: Devices, networking devices, and switches, among other things, are disclosed. An illustrative switch is disclosed to include a plurality of optical Input/Output (I/O) ports; a multi-chip module (MCM) assembly including switching circuitry and at least one chiplet that is optically coupled with one of the plurality of optical I/O ports; and a controller coupled with the at least one chiplet and configured to couple the at least one chiplet with a Quantum Key Distribution (QKD) device.

Abstract: The disclosure addresses the problem of increased optical insertion losses in integrated optical switches. It enables the implementation of an array of optical amplifiers, typically with low/moderate gain, to compensate for optical insertion losses in the integrated switches. The amplifier is based on a doped optical fiber which is optically pumped by a pump laser. The integrated optical switch includes a transposer that facilitates connectivity between a set of fibers and a photonic chip through an optical mode conversion. An all passive circuitry is built in a doped fiber amplifier, WDM couplers combine/separate the signals from the pump, and splitters allow sharing of a single pump by multiple amplifiers. In addition, switch pigtails are implemented with the doped fiber.

Abstract: A network device includes an enclosure, a multi-chip module (MCM), an optical-to-optical connector, and a multi-core fiber (MCF) interconnect. The enclosure has a panel. The MCM is inside the enclosure. The optical-to-optical connector, which is mounted on the panel of the enclosure, is configured to transfer a plurality of optical communication signals. The MCF interconnect includes multiple fiber cores for routing the plurality of optical communication signals between the MCM and the panel. The MCF has a first end at which the multiple fiber cores are coupled to the MCM, and a second end at which the multiple fiber cores are connected to the optical-to-optical connector on the panel.

Abstract: An optical switching device (20) includes a substrate (39) and first and second optical waveguides (23, 25) having respective first and second tapered ends (62, 64), which are fixed on the substrate in mutual proximity one to another. A pair of electrodes (36, 38) is disposed on the substrate with a gap therebetween. A cantilever beam (32) is disposed on the substrate within the gap and configured to deflect transversely between first and second positions within the gap in response to a potential applied between the electrodes. A third optical waveguide (21) is mounted on the cantilever beam and has a third tapered end (60) disposed between the first and second tapered ends of the first and second waveguides, so that the third tapered end is in proximity with the first tapered end when the cantilever beam is in the first position and is in proximity with the second tapered end when the cantilever beam is in the second position.

Abstract: Embodiments are disclosed for generating an optical Pulse Amplitude Modulation 4-level (PAM-4) signal from bandwidth-limited duobinary electrical signals in a Mach-Zehnder modulator. An example system includes an MZM structure that comprises a first waveguide interferometer arm structure associated with a first semiconductor device and a second waveguide interferometer arm structure associated with a second semiconductor device. A polybinary electrical signal is applied to or between the first semiconductor device and the second semiconductor device to convert an input optical signal provided to the MZM structure into an optical PAM-4 signal.

Abstract: Various embodiments provide methods for fabricating a couplable electro-optical device. An example method comprises fabricating a pillar on a substrate by forming a lens spacer portion about an electro-optical component fabricated on the substrate; and adhering unshaped lens material to an exposed surface of the pillar. The exposed surface of the pillar is disposed opposite the substrate. The example method further comprises maintaining the unshaped lens material at a reflow temperature for a reflow time to allow the lens material to reflow into a formed lens shape, and curing the lens material to form an integrated lens having the formed lens shape secured to the lens spacer portion and formed about the electro-optical component on the substrate.

Abstract: An authentication method, network switch, and network device are provided. In one example, a method is described that includes receiving a first signal indicative of a data lane being activated and configured to carry data to or within the network switch, receiving a second signal indicative of an authentication lane being established in the network switch or a device connected to the network switch, where the authentication lane is different from the data lane, and enabling data transmission across the data lane only in response to receiving the second signal indicative of the authentication lane being established.

Abstract: Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

Abstract: Methods for fabricating vertical cavity surface emitting lasers (VCSELs) on a large wafer are provided. An un-patterned epi layer form is bonded onto a first reflector form. The first reflector form includes a first reflector layer and a wafer of a first substrate type. The un-patterned epi layer form includes a plurality of un-patterned layers on a wafer of a second substrate type. The first and second substrate types have different thermal expansion coefficients. A resulting bonded blank is substantially non-varying in a plane that is normal to an intended emission direction of the VCSEL. A first regrowth is performed to form first regrowth layers, some of which are patterned to form a tunnel junction pattern. A second regrowth is performed to form second regrowth layers. A second reflector form is bonded onto the second regrowth layers, wherein the second reflector form includes a second reflector layer.

Abstract: A memory device includes a memory cell and a controller. The memory cell includes: (a) an array of molecule chains, at least one molecule chain includes: (i) first and second binding sites positioned at first and second ends of the molecule chain, respectively, and (ii) a chain of one or more fullerene derivatives, chemically connecting between the first and second binding sites, (b) source and drain electrodes, electrically connected to the first and second binding sites, respectively, and configured to apply to the array a source-drain voltage (VSD) along a first axis, and (c) a gate electrode, configured to apply to the array a gate voltage (VG) along a second different axis. The controller is configured to perform a data storage operation in the memory cell by (i) applying to the gate electrode a signal for producing the VG, and (ii) applying the VSD between the source and drain electrodes.

Abstract: To address the need to excite lasers at a high frequency while minimizing electrical parasitic components, the present invention embraces a system and method of exciting a laser using a direct injection of an electron beam. The system may include a low voltage electron emission device made of one or more electron sources. When the device is activated, an electrical field is applied to the tip of each electron source, causing the electron source to emit a stream of electrons. The electrons are directed into a VCSEL, causing it to emit an optical signal. In another aspect, a system for random number generation is provided. The system may also include a processor that receives a measurement of an initial random value, executes an algorithm, where at least one input of the algorithm is the initial random value, and determines a final random value.

Abstract: A fast optical switch and networks comprising fast optical switches are disclosed herein. In an example embodiment, a fast optical switch includes two or more fabric switches; a first selector switch; and a second selector switch. The first selector switch may selectively pass a signal to one of the two or more fabric switches. The one of the two or more fabric switches may act on the received signal to provide a switched signal and the second selector switch may selectively receive the switched signal provided by the one of the two or more fabric switches. A slot of the fast optical switch comprises a transmission window of one of the two or more fabric switches that occurs in parallel with at least a portion of a reconfiguration window of the other of the two or more fabric switches.