Abstract: Processes for localized lasering of a lamination stack and graphene-coated printed circuit board (PCB) are disclosed. An example PCB may include a lamination stack, post-lamination, that may further include a core, an adhesive layer, and at least one graphene-metal structure. A top layer of graphene of the graphene-metal structure may have never been grown before the lamination process or may have been removed post-lamination such that a portion of the top layer of graphene is missing. The localized lasering process described herein may grow (for the first time) or re-grow the graphene layer of the exposed portion of the metal layer without adverse effects to the rest of the lamination stack or PCB and while promoting a uniform layer of graphene on the top surface. A process of growing graphene through application of molecular layer and a self-assembled monolayer (SAM), are also described herein.

Abstract: Various embodiments provide a method for fabricating a couplable electro-optical device. In an example embodiment, the method includes fabricating at least one raw electro-optical device on a substrate; applying lens material to a working stamp; aligning the substrate and the working stamp; pressing the substrate onto the lens material until the distance between the substrate and the working stamp is a predetermined distance; and curing the lens material to form an integrated lens secured to the at least one electro-optical device on the substrate. An anti-reflective coating layer may be optionally applied on top of the molded lens. The couplable electro-optical device may be incorporated into a receiver, transmitter, and/or transceiver using passive alignment to align the couplable electro-optical device to an optical fiber.

Abstract: Optical communication modules and associated methods and computer program products for performing network communication security are provided. An example optical module includes a substrate, a first optoelectronic component supported by the substrate configured for operation with optical signals having a first wavelength, and a second optoelectronic component supported by the substrate configured for operation with optical signals having a second wavelength. The module further includes an optical communication medium defining a first end in optical communication with the first optoelectronic component and the second optoelectronic component and a second end. The module also includes security circuitry operably connected with the first optoelectronic component and the second optoelectronic component. The security circuitry determines the presence of a noncompliant component coupled with the optical communication medium at the second end based upon operation of the second optoelectronic component.

Abstract: Optical communication modules and associated methods and computer program products for performing network communication security are provided. An example optical module includes a substrate, a first optoelectronic component supported by the substrate configured for operation with optical signals having a first wavelength, and a second optoelectronic component supported by the substrate configured for operation with optical signals having a second wavelength. The module further includes an optical communication medium defining a first end in optical communication with the first optoelectronic component and the second optoelectronic component and a second end. The module also includes security circuitry operably connected with the first optoelectronic component and the second optoelectronic component. The security circuitry determines the presence of a noncompliant component coupled with the optical communication medium at the second end based upon operation of the second optoelectronic component.

Abstract: A package includes a light emitting portion configured to emit light, a lens including a first lens surface and a second lens surface, a protective layer between the light emitting portion and the first lens surface and that shields the first lens surface from a surrounding environment, and an optical component that redirects light output from the second lens surface. The first lens surface is configured to receive the emitted light from the light emitting portion, the second lens surface is configured output light that has passed through the first lens surface, and the protective layer has a refractive index greater than 1.5.

Abstract: Embodiments are disclosed for facilitating an end-to-end link channel with one or more lookup tables for equalization. An example system includes a first transceiver and a second transceiver. The first transceiver includes a clock data recovery (CDR) circuit configured to receive communication data from a switch and to manage a lookup table associated with equalization of the communication data. The first transceiver also includes a first driver circuit communicatively coupled to the CDR circuit and configured to generate an electrical signal associated with the communication data. The second transceiver includes a second driver circuit, communicatively coupled to the first transceiver, that is configured to receive the electrical signal from the first transceiver and to modulate a laser source based on the electrical signal to generate an optical signal via the laser source.

Abstract: An optoelectronic transmitter (10) includes an electro-optic modulator (12), digital driving circuitry (14), and feedback circuitry (30). The electro-optic modulator is configured to modulate an optical signal in response to an electrical drive signal. The digital driving circuitry is coupled to the electro-optical modulator and is configured to generate the electrical drive signal. The feedback circuitry is configured to measure a quantity indicative of a power level of the modulated optical signal produced by the electro-optic modulator, and to adapt a supply voltage to the digital driving circuitry in response to the measured quantity.

Abstract: A transceiver comprises a transmitter including a light source, a modulator coupled to the light source, a driver that drives the modulator according to a set of driving conditions to cause the modulator to output optical signals based on light from the light source, and an output that passes first portions of the optical signals output by the modulator. The transceiver further comprises a first detector that detects second portions of the optical signals output from the modulator, and a receiver including a second detector that detects optical signals from an external transmitter.

Abstract: A passive dual polarization unit and coherent transceiver and/or receiver including one or more passive dual polarization units are provided. An example passive dual polarization unit includes a polarization splitter configured to split an input signal into a TE mode and TM mode signals; TE/TM splitters each designed to split the TE/TM mode signals into first TE/TM signals and second TE/TM signals; a first TE signal polarization rotation component for receiving the first TE signal and providing a third TM signal having the same magnitude and time dependence as the first TE signal; a first TM signal polarization rotation component for receiving the first TM signal and providing a third TE signal having the same magnitude and time dependence as the first TM signal; and TE/TM couplers that couple the second TE/TM signals and the third TE/TM signals to generate output TE/TM signals.

Abstract: Various embodiments provide a PIN-photodetector configured to detect light characterized by a particular wavelength range. The photodetector includes an absorber region including a material having an absorption coefficient of greater than 104 cm?1 in the particular wavelength range. The absorber region has an absorber thickness in a direction that is substantially parallel to a detection axis of the photodetector. The photodetector further includes a collector region including a material that is substantially transparent to the particular wavelength range. The collector region has a collector thickness in the direction that is substantially parallel to the detection axis. The collector thickness is greater than the absorber thickness. The absorber region does not spatially overlap with the collector region. The photodetector is configured to operate at a bandwidth of at least 50 GHz.

Abstract: Apparatuses, systems, and associated methods of manufacturing are described that provide a dynamic data interconnect and networking cable configuration. The dynamic data interconnect includes a substrate, transmitters supported on the substrate configured to generate signals, and receivers supported on the substrate configured to receive signals. The dynamic data interconnect further includes a number of connection pads that receive data cables attached thereto and a number of transmission lanes that operably couple the transmitters and receivers to the connection pads. The dynamic data interconnect further includes transmission circuitry in communication with each of the transmitters and receivers such that, in an operational configuration, the transmission circuitry determines a transmission state of the dynamic data interconnect and selectively disables operation of at least a portion of the transmitters or at least a portion of the receivers.

Abstract: Apparatuses, systems, and associated methods of manufacturing are described that provide an optical interposer and associated communication system. An example optical interposer includes a substrate having a first end that receives a first optical fiber welded thereto and a second end that receives a plurality of photonic integrated circuits (PICs) attached thereto. The interposer further includes an optical waveguide network defined by the substrate that provides optical communication between the first welded optical fiber and the plurality of PICs. The optical waveguide network also includes optical redistribution elements supported by the substrate. In an operational configuration, the optical interposer receives a first input optical signal from the first welded optical fiber, and the plurality of optical redistribution elements successively split the first input optical signal such that a plurality of output optical signals is directed to the plurality of PICs.

Abstract: VCSELs designed to emit light at a characteristic wavelength in a wavelength range of 910-2000 nm and formed on a silicon substrate are provided. Integrated VCSEL systems are also provided that include one or more VCSELs formed on a silicon substrate and one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate. In an integrated VCSEL system, at least one of the one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate is electrically or optically coupled to at least one of the one or more VSCELs on the silicon substrate. Methods for fabricating VCSELs on a silicon substrate and/or fabricating an integrated VCSEL system are also provided.

Abstract: Various embodiments of improved PIN-type photodiodes are provided. In an example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a second absorbing layer disposed between the first absorbing layer and the n-type contact. The first absorbing layer is characterized by a first absorption coefficient and the second absorbing layer is characterized by a second absorption coefficient. The second absorption coefficient is greater than the first absorption coefficient. In another example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a non-absorbing accelerating layer disposed between absorbing layers and non-absorbing drift layer and the n-type contact.

Abstract: An optoelectronic device (20) includes thin film structures (56) disposed on a semiconductor substrate (54) and patterned to define components of an integrated drive circuit, which is configured to generate a drive signal. A back end of line (BEOL) stack (42) of alternating metal layers (44, 46) and dielectric layers (50) is disposed over the thin film structures. The metal layers include a modulator layer (48), which contains a plasmonic waveguide (36, 99, 105) and a plurality of electrodes (30, 32, 34, 96, 98, 106), which apply a modulation to surface plasmons polaritons (SPPs) propagating in the plasmonic waveguide in response to the drive signal. A plurality of interconnect layers are patterned to connect the thin film structures to the electrodes.

Abstract: A method and system for analyzing Vertical-Cavity Surface-Emitting Lasers (VCSELs) on a wafer are provided. An illustrative method of is provided that includes: applying a stimulus to each of the plurality of VCSELs on the wafer; measuring, for each of the plurality of VCSELs, two or more VCSEL parameters responsive to the stimulus; correlating the measured two or more VCSEL parameters to define a value of a common performance characteristic; and identifying clusters of VCSELs having similar values of the common performance characteristic. The clusters of VCSELs may be determined to collectively meet or not meet an optical performance requirement defined for the VCSELs on the wafer.

Abstract: A method and system for large scale Vertical-Cavity Surface-Emitting Laser (VCSEL) binning from wafers to be compatible with a Clock-Data Recovery Unit (CDRU) and/or a VCSEL driver are provided. An illustrative method of binning is provided that includes: for at least a portion of VCSELs on a wafer, measuring a set of representative parameters of the VCSELs, of predetermined DC or small-signal values, and sorting the measured VCSELs into clusters according to the measured set of representative parameters of the VCSELs; further sorting the clusters into sub-groups that comply with specifications of the VCSEL driver; and providing a feedback signal to the CDRU for equalizing control signals provided to the VCSEL driver.

Abstract: A multi-chip module (MCM-10) includes a substrate (11), one or more photonic chips (14) disposed on the substrate, and an electronic chip (12) disposed on the substrate. The one or more photonic chips include one or more optical channels (22), which are configured to guide propagating optical signals, and two or more photonic modulator-segments (18) coupled to each of the optical channels, each photonic modulator-segment configured to modulate the propagating optical signals responsively to digitally modulated driving electrical signals provided thereto.

Abstract: A universal multi-core fiber (UMCF) interconnect includes multiple optical fiber cores and a shared cladding. Each of the optical fiber cores is configured to convey first optical communication signals having a first carrier wavelength using multi-mode propagation, and to convey second optical communication signals having a second carrier wavelength using single-mode propagation. The shared cladding encloses the multiple optical fiber cores.

Abstract: An apparatus includes multiple ports, packet communication processing circuitry coupled to the ports, and a processor that is configured to receive, from the packet communication processing circuitry, metadata that is indicative of a temporal pattern of control messages communicated via one or more of the ports, and to identify a network attack by applying anomaly detection to the temporal pattern of the control messages.