Abstract: Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

Abstract: Methods for fabricating vertical cavity surface emitting lasers (VCSELs) on a large wafer are provided. An un-patterned epi layer form is bonded onto a first reflector form. The first reflector form includes a first reflector layer and a wafer of a first substrate type. The un-patterned epi layer form includes a plurality of un-patterned layers on a wafer of a second substrate type. The first and second substrate types have different thermal expansion coefficients. A resulting bonded blank is substantially non-varying in a plane that is normal to an intended emission direction of the VCSEL. A first regrowth is performed to form first regrowth layers, some of which are patterned to form a tunnel junction pattern. A second regrowth is performed to form second regrowth layers. A second reflector form is bonded onto the second regrowth layers, wherein the second reflector form includes a second reflector layer.

Abstract: A memory device includes a memory cell and a controller. The memory cell includes: (a) an array of molecule chains, at least one molecule chain includes: (i) first and second binding sites positioned at first and second ends of the molecule chain, respectively, and (ii) a chain of one or more fullerene derivatives, chemically connecting between the first and second binding sites, (b) source and drain electrodes, electrically connected to the first and second binding sites, respectively, and configured to apply to the array a source-drain voltage (VSD) along a first axis, and (c) a gate electrode, configured to apply to the array a gate voltage (VG) along a second different axis. The controller is configured to perform a data storage operation in the memory cell by (i) applying to the gate electrode a signal for producing the VG, and (ii) applying the VSD between the source and drain electrodes.

Abstract: To address the need to excite lasers at a high frequency while minimizing electrical parasitic components, the present invention embraces a system and method of exciting a laser using a direct injection of an electron beam. The system may include a low voltage electron emission device made of one or more electron sources. When the device is activated, an electrical field is applied to the tip of each electron source, causing the electron source to emit a stream of electrons. The electrons are directed into a VCSEL, causing it to emit an optical signal. In another aspect, a system for random number generation is provided. The system may also include a processor that receives a measurement of an initial random value, executes an algorithm, where at least one input of the algorithm is the initial random value, and determines a final random value.

Abstract: A fast optical switch and networks comprising fast optical switches are disclosed herein. In an example embodiment, a fast optical switch includes two or more fabric switches; a first selector switch; and a second selector switch. The first selector switch may selectively pass a signal to one of the two or more fabric switches. The one of the two or more fabric switches may act on the received signal to provide a switched signal and the second selector switch may selectively receive the switched signal provided by the one of the two or more fabric switches. A slot of the fast optical switch comprises a transmission window of one of the two or more fabric switches that occurs in parallel with at least a portion of a reconfiguration window of the other of the two or more fabric switches.

Abstract: Example vertical cavity surface emitting lasers (VCSELs) include a mesa structure disposed on a substrate, the mesa structure including a first reflector, a second reflector defining at least one diameter, and an active cavity material structure disposed between the first and second reflectors; and a second contact layer disposed at least in part on top of the mesa structure and defining a physical emission aperture having a physical emission aperture diameter. The ratio of the physical emission aperture diameter to the at least one diameter is greater than or approximately 0.172 and/or the ratio of the physical emission aperture diameter to the at least one diameter is less than or approximately 0.36. An example VCSEL includes a substrate; a buffer layer disposed on a portion of the substrate; and an emission structure disposed on the buffer layer.

Abstract: A network device includes an enclosure, a multi-chip module (MCM), an optical-to-optical connector, and a multi-core fiber (MCF) interconnect. The enclosure has a panel. The MCM is inside the enclosure. The optical-to-optical connector, which is mounted on the panel of the enclosure, is configured to transfer a plurality of optical communication signals. The MCF interconnect has a first end coupled to the MCM and a second end connected to the optical-to-optical connector on the panel, for routing the plurality of optical communication signals between the MCM and the panel.

Abstract: Embodiments are disclosed for generating an optical Pulse Amplitude Modulation 4-level (PAM-4) signal from bandwidth-limited duobinary electrical signals in a Mach-Zehnder modulator. An example system includes an MZM structure that comprises a first waveguide interferometer arm structure associated with a first semiconductor device and a second waveguide interferometer arm structure associated with a second semiconductor device. A polybinary electrical signal is applied to or between the first semiconductor device and the second semiconductor device to convert an input optical signal provided to the MZM structure into an optical PAM-4 signal.

Abstract: A continuous-feed chemical vapor deposition system and an associated method are provided. An example of the continuous-feed chemical vapor deposition system includes a first chamber configured to receive a substrate. The continuous-feed chemical vapor deposition system includes a second chamber downstream from the first chamber and configured to receive the substrate from the first chamber. The second chamber is configured to perform a chemical vapor deposition process on the substrate. The continuous-feed chemical vapor deposition system includes a third chamber downstream from the second chamber that is configured to receive the substrate from the second chamber upon completion of the chemical vapor deposition process. The second chamber can be environmentally isolated from the first chamber and the third chamber. The first chamber is further configured to receive a subsequent substrate when the chemical vapor deposition process is occurring in the second chamber.

Abstract: Processes for creating a two-dimensional-target structure are disclosed. An example process to create a two-dimensional-target structure may include the process of providing two-dimensional material grown on an initial substrate to create a two-dimensional-substrate structure; applying the two-dimensional-substrate structure to a target substrate via an adhesion promoter to create a lamination stack; applying a lamination process to the lamination stack; and then removing the initial substrate from the lamination stack, post-lamination, to create the two-dimensional-target structure. The two-dimensional-target structure may then be used in such rigid or flexible electronic devices and/or non-standard devices as the target substrate may be rigid or flexible and/or translucent in contrast to the initial substrate first used to grow the two-dimensional material.

Abstract: Processes for laminating a conductive-lubricant coated Printed Circuit Board (PCB) are disclosed. An example laminated PCB may include a lamination stack that may further include a core, an adhesive layer, and at least one graphene-metal structure or at least one hexagonal Boron Nitride metal (h-BN-metal) structure. The materials of the PCB may change in accordance with the invention described herein, including the materials of the core, the materials of the conductive-lubricant coatings, or the metal layers of the conductive-lubricant-metal structures. Doping processes for each change in materials used are also described herein. The conductive-lubricant of the conductive-lubricant-metal structure will promote high frequency performance and heat management within the PCB. Furthermore, a removal process of those materials post-lamination is described herein to promote protection of materials and subsequent removal of protective layers without breakage or tearing.

Abstract: A network interface controller includes processing circuitry configured to pair with a local root of trust of a host device connected to the network interface controller and provide a key to an encryption device of the host device that enables the encryption device to encrypt data of one or more host device applications using the key. The encrypted data are stored in host device memory. The processing circuitry is configured to share the key with a remote endpoint and forward the encrypted data from the host device memory to the remote endpoint.

Abstract: A routing controller (30) includes an interface (68) and multiple processors (60) The interface is configured to receive a permutation (76) defining requested interconnections between N input ports and N output ports of a Benes network (24). The Benes network includes multiple 2-by-2 switches (42), and is reducible in a plurality of nested subnetworks associated with respective nesting levels, down to irreducible subnetworks including a single 2-by-2 switch. The multiple processors are configured to collectively determine a setting of the 2-by-2 switches that implements the received permutation, including determining sub-settings for two or more subnetworks of a given nesting level in parallel, and to configure the multiple 2-by-2 switches of the Benes network in accordance with the determined setting.

Abstract: Embodiments are disclosed for a coupling element with embedded modal filtering for a laser and/or a photodiode. An example system includes a laser and an optical coupling element. The laser is configured to emit an optical signal. The optical coupling element is configured to receive the optical signal emitted by the laser. The optical coupling element is also configured to be connected to an optical fiber such that, in operation, the optical signal is transmitted from the laser to the optical fiber via the optical coupling element. Furthermore, the coupling element comprises a tapered section that provides modal filtering of the optical signal.

Abstract: Processes for laminating a graphene-coated printed circuit board (PCB) are disclosed. An example laminated PCB may include a lamination stack that may include an inner core, an adhesive layer, and at least one graphene-metal structure. Pressure and heat—which may be applied under vacuum or controlled gas atmosphere—may be applied to the lamination stack, after all materials have been placed. The graphene of the graphene-metal structure is designed to promote high frequency performance and heat management within the PCB.

Abstract: Methods for forming an at least partially oxidized confinement layer of a semiconductor device and corresponding semiconductor devices are provided. The method comprises forming two or more layers of a semiconductor device on a substrate. The layers include an exposed layer and a to-be-oxidized layer. The to-be-oxidized layer is disposed between the substrate and the exposed layer. The method further comprises etching, using a masking process, a pattern of holes that extend through the exposed layer at least to a first surface of the to-be-oxidized layer. Each hole of the pattern of holes extends in a direction that is transverse to a level plane that is parallel to the first surface of the to-be-oxidized layer. The method further comprises oxidizing the to-be-oxidized layer through the pattern of holes by exposing the two or more layers of the semiconductor device to an oxidizing gas to form a confinement layer.

Abstract: A device for a network switch comprises N input ports, and an electrical block including a plurality of electrical switches configured to route signals in an electrical domain. Each electrical switch includes M input ports, and the device further comprises an optical block coupled to the electrical block. The optical block is configured to route signals in an optical domain. A configuration of the optical block and a configuration of the electrical block are based on at least a number of the N input ports.

Abstract: A substrate carrier and a mechanism for moving the substrate carrier through a chemical vapor deposition system are provided. The substrate carrier includes a cylindrical housing having an interior surface. A plurality of plurality of shelves fixed to the interior surface, each shelf configured to support at least one substrate. The substrate carrier may include a connector configured to engage the substrate carrier with the mechanism. The mechanism may include a moveable arm and a motor configured to actuate the moveable arm. The moveable arm may include an actuating member connected to the motor and configured to move the moveable arm between a retracted state and an extended state. The moveable arm may be configured to operate in a chamber having a first pressure and a first temperature and the motor may be configured to operate in an environment having a second pressure.

Abstract: A first and a second flange assembly configured for facilitating uniform and laminar flow in a system are provided. The first flange assembly includes a first flange body configured to introduce a gas into a chamber. The first flange assembly includes a plurality of outlet tubes disposed on an interior surface of the first flange body and a plurality of inlet tubes disposed on an exterior surface of the first flange body and in fluid communication with the plurality of outlet tubes. The second flange assembly includes a second flange body configured to remove the gas from the chamber. The second flange assembly includes a plurality of through holes extending from an interior surface to an exterior surface of the second flange body and a plurality of exit tubes extending from the exterior surface of the second flange body and in fluid communication with the plurality of through holes.

Abstract: Processes for localized lasering of a lamination stack and graphene-coated printed circuit board (PCB) are disclosed. An example PCB may include a lamination stack, post-lamination, that may further include a core, an adhesive layer, and at least one graphene-metal structure. A top layer of graphene of the graphene-metal structure may have never been grown before the lamination process or may have been removed post-lamination such that a portion of the top layer of graphene is missing. The localized lasering process described herein may grow (for the first time) or re-grow the graphene layer of the exposed portion of the metal layer without adverse effects to the rest of the lamination stack or PCB and while promoting a uniform layer of graphene on the top surface. A process of growing graphene through application of molecular layer and a self-assembled monolayer (SAM), are also described herein.