Abstract: A circuit arrangement includes a preprocessing circuit configured to obtain context information related to a user location, a learning circuit configured to determine a predicted user movement based on context information related to a user location to obtain a predicted route and to determine predicted radio conditions along the predicted route, and a decision circuit configured to, based on the predicted radio conditions, identify one or more first areas expected to have a first type of radio conditions and one or more second areas expected to have a second type of radio conditions different from the first type of radio conditions and to control radio activity while traveling on the predicted route according to the one or more first areas and the one or more second areas.

Abstract: An automatic target image acquisition and calibration system for application in a defect inspection system is disclosed. During the defect inspection system working normally, the automatic target image acquisition and calibration system is configured to find a recognition structure from an article under inspection, and then determines a relative position and a relative 3D coordinate if the article. Therefore, a robotic arm is controlled to carry a camera to precisely face each of a plurality of inspected surfaces of the article, such that a plurality of article images are acquired by the camera. It is worth explaining that, during the defect inspection of the article, there is no need to modulate an image acquiring height and an image acquiring angle of the camera and an illumination of a light source.

Abstract: The present disclosure relates to a thermal coupling method for preparing ethylene by ethanol dehydration and device thereof. The device includes an ethanol dehydration reaction system, a quenching compression system, an alkaline washing system, a molecular sieve drying system and an ethylene purification and propylene refrigeration cycle system; ethanol dehydration reaction products in the ethanol dehydration reaction system serve as a heat source for preheating, vaporization and superheating of a raw material of ethanol; tower bottoms of an evaporation tower in the quenching compression system serve as a heat source for preheating of a feed stream of the evaporation tower and heating of an overhead gas of a quenching tower; products of ethylene in the alkaline washing system serve as a cold source for cooling of crude ethylene.

Abstract: Display panel and display device are provided. The display panel includes a first display area having a light-transmitting area. The display panel further includes a display function layer including light-emitting elements; auxiliary structures on a side of the display function layer facing a display surface of the display panel; and the auxiliary structures configured around pixels in the first display area.

Abstract: Embodiments of the application provide a train control method, system, computer device and storage medium. A scheme applying the train control method of the application determines a current travelling state of a vehicle under control firstly, and configures different state weights according to different travelling states to determine a corresponding target travelling parameter in a particular travelling state. The scheme can ensure to determine and obtain in real time an optimal target travelling parameter for the vehicle under control according to its current travelling state, regardless of the travelling environment of the vehicle under control, and control the vehicle under control in real time and effectively by the target travelling parameter during a travelling process. Thereby, the real-time performance and control accuracy of vehicle control can be improved, and the control effect of the train control method provided by the embodiments of the application can be further improved.

Abstract: Systems and methods increase power efficiency in communication systems by examining a digital signal to determine whether a threshold corresponding to an increase in a power requirement is likely to be exceeded. The signal is encoded with information indicating the likely change and communicated to a driver that, upon extracting the information, uses it to cause instruct an amplifier to increase a power output to accommodate the increase in power requirement. Once the threshold is no longer exceeded, the driver circuit, advantageously, decreases the power output to conserve energy. In various embodiments, an amplifier may increase power efficiency by switching from a low-power circuit configuration to a high-circuit configuration.

Abstract: An injection machine for producing degradable edible objects includes a material pipe with an axial pipeline and an injection head; a spiral rod being a screw thread passed into the pipeline and having a feeding section, a compressed section and a metering section, and the feeding and metering sections separately having equal diameters, and the metering section having an outer diameter greater than that of the feeding section, and the compressed section having an outer diameter gradually increasing from the feeding section to the metering section, and the front end of the spiral rod being provided with a spiral rod head, and an injection nozzle being screwed with the injection head, and the heating unit being installed on the outer peripheral surfaces of the material pipe, the injection head and the injection nozzle.

Abstract: A semiconductor device includes a first semiconductor layer below a second semiconductor layer; first and second gate dielectric layers surrounding the first and the second semiconductor layers, respectively; and a gate electrode surrounding both the first and the second gate dielectric layers. The first gate dielectric layer has a first top section above the first semiconductor layer and a first bottom section below the first semiconductor layer. The second gate dielectric layer has a second top section above the second semiconductor layer and a second bottom section below the second semiconductor layer. The first top section has a first thickness. The second top section has a second thickness. The second thickness is greater than the first thickness.

Abstract: An electromagnetic wave absorption structure includes at least one electromagnetic wave composite absorbing layer. The electromagnetic wave composite absorbing layer includes a conductive composite layer and an insulating layer. The insulating layer is stacked and overlapped with the conductive composite layer. The electromagnetic wave absorption structure can provide good electromagnetic wave absorption function, and have the features of light and thin, so it is particularly suitable for satisfying the electromagnetic wave absorption or shielding requirements of thin electronic products.

Abstract: A peripheral component interconnect express (PCIe) device error reporting optimization method includes acquiring advanced error reporting data of a PCIe device, executing a removal detection process of the PCIe device for detecting if the PCIe device is plugged into a connector, transmitting error log data of the PCIe device to a baseboard management controller and an advanced configuration and power interface according to the advanced error reporting data if the PCIe device is plugged into the connector, and filtering the error log data of the PCIe device so that filtered error log data is received by the baseboard management controller and the advanced configuration and power interface if the PCIe device and the connector are electrically disconnected.

Abstract: A method for forming a semiconductor device includes forming a metal gate stack having a gate dielectric layer and a gate electrode disposed over the gate dielectric layer. The gate electrode includes a first metal layer and a second metal layer. The method further includes performing a plasma treatment to a top surface of the metal gate stack and forming a conductive layer over the treated top surface of the metal gate stack. A top portion of the conductive layer is formed above a top surface of the gate dielectric layer, and a bottom portion of the conductive layer penetrates into the first and the second metal layers of the gate electrode at different distances.

Abstract: A method includes providing a structure having a first channel member and a second channel member over a substrate. The first channel member is located in a first region of the structure and the second channel member is located in a second region of the structure. The method also includes forming a first oxide layer over the first channel member and a second oxide layer over the second channel member, forming a first dielectric layer over the first oxide layer and a second dielectric layer over the second oxide layer, and forming a capping layer over the second dielectric layer but not over the first dielectric layer. The method further includes performing an annealing process to increase a thickness of the second oxide layer under the capping layer.

Abstract: A hand-held scanning probe is included in an optical scanning system. The hand-held scanning probe includes a housing and an optical component. The optical component includes a first lens, a reflector, a two-dimensional beam scanning mechanism, a splitter and a second lens. The first lens is used to receive a laser beam split by a fiber-coupled splitter and convert the laser beam into a form of collimated light. The reflector is used to refract the laser beam. The two-dimensional beam scanning mechanism provides the laser beam to a surface for two-dimensional scanning, producing a swing beam. The splitter is used to separate a scanning end beam returned from the test specimen from an illumination beam into two different light paths. The second lens is used to focus the swing beam at the test surface to form the scanning end beam for scanning. An optical scanning system is also provided.

Abstract: A method includes transferring a tool monitoring device over a load port of a tool. A bottom of the tool monitoring device has a plurality of holes, and the load port comprises a plurality of pins at a top surface of the load port. The tool monitoring device is placed on the top surface of the load port. The pins at the top surface of the load port are plugged into the holes of the tool monitoring device. Heights of the pins are sensed to identifying a type of the load port after the tool monitoring device is placed on the top surface of the load port. An environment around the load port is monitored by using the tool monitoring device.

Abstract: The disclosure related to a resin composition for molding device for dental restoration comprising 10 to 50 parts by weight of an urethane acrylate oligomer with a functionality less than 4, 20 to 40 parts by weight of morpholino-group containing acrylate monomera morpholino-group containing acrylate monomer, 10 to 40 parts by weight of a polymerizable acrylate monomer composition and 0.5 to 5 parts by weight of a photoinitiator, wherein the polymerizable acrylate monomer composition comprises 40 to 60 parts by weight of an alicyclic acrylate monomer and 40 to 60 parts by weight of ether-bond containing aliphatic acrylate monomeran ether-bond containing aliphatic acrylate monomer. The shore hardness of the resin composition after being cured of the present invention is not less than 70D and the flexural strain thereof is not less than 0.15.

Abstract: A method of forming a semiconductor device includes forming a fin over a substrate, the fin comprising alternately stacking first semiconductor layers and second semiconductor layers, removing the first semiconductor layers to form spaces each between the second semiconductor layers, forming a gate dielectric layer wrapping around each of the second semiconductor layers, forming a fluorine-containing layer on the gate dielectric layer, performing an anneal process to drive fluorine atoms from the fluorine-containing layer into the gate dielectric layer, removing the fluorine-containing layer, and forming a metal gate on the gate dielectric layer.

Abstract: The present invention relates to the field of manufacture of polymer materials, and more particularly to an ultra-high molecular weight polyethylene (UHMWPE) composition and a cut resistant and creep resistant fiber prepared therefrom. The ultra-high molecular weight polyethylene composition comprises the following components: modified graphene, modified silicon carbide whisker, and ultra-high molecular weight polyethylene. The ultra-high molecular weight polyethylene composition provided by the present invention has superior cut resistance, high strength and high modulus. By regulating the morphology of silicon carbide, the type of a coupling agent, the mixing ratio and so on, not only cut resistance, high strength and high modulus can be provided, but also creep resistance can be improved.

Abstract: A method for forming a FinFET device structure is provided. The method includes forming a fin structure extended above a substrate and forming a gate structure formed over a portion of the fin structure. The method also includes forming a source/drain (S/D) structure over the fin structure, and the S/D structure is adjacent to the gate structure. The method further includes doping an outer portion of the S/D structure to form a doped region, and the doped region includes gallium (Ga). The method includes forming a metal silicide layer over the doped region; and forming an S/D contact structure over the metal silicide layer.

Abstract: Semiconductor structures are provided. The semiconductor structure includes a fin structure protruding from a substrate and a doped region formed in the fin structure. The semiconductor structure further includes a metal gate structure formed across the fin structure and a gate spacer formed on a sidewall of the metal gate structure. The semiconductor structure further includes a source/drain structure formed over the doped region. In addition, the doped region continuously surrounds the source/drain structure and is in direct contact with the gate spacer.

Abstract: Vertical interconnect structures and methods of forming are provided. The vertical interconnect structures may be formed by partially filling a first opening through one or more dielectric layers with layers of conductive materials. A second opening is formed in a dielectric layer such that a depth of the first opening after partially filling with the layers of conductive materials is close to a depth of the second opening. The remaining portion of the first opening and the second opening may then be simultaneously filled.