Abstract: A display device including a first integrated circuit including: an assembly of light-emitting diodes, each diode including a vertical stack of a first semiconductor layer of a first conductivity type and of a second semiconductor layer of a second conductivity type; and on the side of a surface of the first circuit opposite to the first semiconductor layer, a connection structure including a dielectric layer having a plurality of identical or similar connection pads, regularly distributed across the entire surface of the first circuit, arranged therein, each diode having a first electrode in contact with at least one pad of the connection structure, and a second electrode in contact with a plurality of pads of the connection structure at the periphery of the plurality of diodes.

Abstract: A process for hydrophilic bonding first and second substrates, comprising: —bringing the first and second substrates into contact to form a bonding interface between main surfaces of the first and second substrates, and —applying a heat treatment to close the bonding interface. The process further comprises, before the step of bringing into contact, depositing, on the main surface of the first and/or second substrate, a bonding layer comprising a non-metallic material that is permeable to dihydrogen and that has, at the temperature of the heat treatment, a yield strength lower than that of at least one of the materials of the first substrate and of the second substrate located at the bonding interface. The layer has a thickness between 1 and 6 nm, and the heat treatment is carried out at a temperature lower than or equal to 900° C., and preferably lower than or equal to 600° C.

Abstract: A semiconductor device comprises a substrate body with a surface, a conductor comprising a conductor material covering at least part of the surface, and a dielectric that is arranged on a part of the surface that is not covered by the conductor. Therein, the conductor is in contact with the substrate body, the conductor and the dielectric form a layer, and a bonding surface of the layer has surface topographies of less than 10 nm, with the bonding surface facing away from the substrate body. Moreover, the semiconductor device is free of a diffusion barrier.

Abstract: A method for hydrophilic direct bonding of a first substrate onto a second substrate is provided, including: providing the first substrate having a first main surface and the second substrate having a second main surface; bringing the first and the second substrates into contact with one another, respectively, via the first and the second main surfaces, to form a bonding interface between two bonding surfaces; applying a heat treatment to close the bonding interface; and prior to the step of bringing the first and the second substrates into contact, forming, on the first main surface and/or on the second main surface, a bonding layer made of an amorphous semiconductor material having doping elements and a thickness of less than or equal to 50 nm, a face of the bonding layer constituting one of the two bonding surfaces, an oxide layer being less than 20 nm from the bonding interface.

Abstract: The invention relates to a method for fabricating a detection device 1, comprising the following steps: forming a stack 10, comprising a thermal detector 20, a mineral sacrificial layer 15 and a thin encapsulation layer 16 having a lateral indentation 4; forming a stack 30, comprising a thin supporting layer 33, a getter portion 34 and a thin protective layer 35; directly bonding the thin supporting layer 33 to the thin encapsulation layer 16 so that the getter portion 34 is located in the lateral indentation 4; forming a vent 17, and eliminating the mineral sacrificial layer 15 and the thin protective layer 35; depositing a thin sealing layer 5, blocking the vent 17.

Abstract: A method for disassembling a stack of at least three substrates. The invention relates to the techniques for transferring thin films in the microelectronics field. It proposes a method for disassembling a stack of at least three substrates having between them two interfaces, one interface of which has an adhesion energy and an interface of which has an adhesion energy, with less than, the method comprising: 1) implementing a removal of material on the first substrate, in order to expose a surface of the second substrate, 2) transferring the stack onto a flexible adhesive film so that the surface has, with an adhesive layer of the film, an adhesion energy greater than, and 3) disassembling the third substrate at the interface between the second substrate and the third substrate. The method makes it possible to open the stack via the interface thereof with the highest adhesion energy.

Abstract: A method for manufacturing a handle substrate, the method including the steps of: a) providing a support substrate comprising a receiving face, b) forming a film by depositing an anti-adherent formulation including a first solvent over the receiving face of the support substrate, c) depositing a liquid formulation over a face of the film, before the complete evaporation of the first solvent, the liquid formulation being intended to form an adhesive layer, and has a ?l(liquid) surface energy, and d) evaporating the first solvent so as to obtain anti-adherent film from the film in order to obtain the handle substrate, the anti-adherent film allowing obtaining a bonding energy with the adhesive layer that is low enough: <1.2 J/m2 or advantageously <0.4 J/m2.

Abstract: A method of transferring a thin film from a substrate to a flexible support that includes transfer of the flexible support by a layer of polymer, crosslinkable under ultraviolet light, directly on the thin film, the adhesion energy of the polymer evolving according to its degree of crosslinking, decreasing to an energy point d minimum adhesion achieved for a nominal crosslinking rate, then increasing for a crosslinking rate greater than the nominal crosslinking rate, then apply, on the polymer layer, an ultraviolet exposure parameterized so as to stiffen the polymer layer and have an adhesion energy between the thin film and the flexible support greater than an adhesion energy between the thin film and the substrate, then remove the substrate.

Abstract: A method for transferring at least one chip, from a first support to a second support, includes forming, while the chip is assembled to the first support, an interlayer in the liquid state between, and in contact with, a front face of the chip and an assembly surface of a face of the second support and a solidification of the interlayer. Then, the chip is detached from the first support while maintaining the interlayer in the solid state.

Abstract: A method of temporary bonding of an object having first and second opposite surfaces successively including bonding the object to a handle on the side of the first surface, bonding the object to a first adhesive film on the side of the second surface, bonding the first adhesive film to a second adhesive film on the side opposite to the object, and removing the handle from the object.

Abstract: A method of treatment of an electronic circuit including at a location at least one electrically-conductive test pad having a first exposed surface. The method includes the at least partial etching of the test pad from the first surface, and the forming on the electronic circuit of an interconnection level covering said location and including, on the side opposite to said location, a second planar surface adapted for the performing of a hybrid molecular bonding.

Abstract: A method includes transferring a layer onto a flexible substrate, the layer being located in a stack on the front face of the substrate. The substrate includes at least one supplementary stack interposed between the stack and the bulk layer of the substrate. This supplementary stack includes at least two layers with thicknesses decreasing in the direction of the front face. The method makes provision, after bonding the flexible substrate on the front face, for successively and gradually removing the various layers of the substrate. Such gradualness makes it possible to transfer a thin layer of silicon, with a thickness of less than 50 nm, onto a flexible substrate.

Abstract: A method for the temporary bonding of a substrate of interest to a handle substrate, comprising a step of forming an assembly by placing the bonding faces of the substrate of interest and of the handle substrate into contact with one another via a thermoplastic polymer, and a step of treating the assembly at a treatment temperature that exceeds the glass transition temperature of the thermoplastic polymer. Prior to the assembly forming step, this method comprises: a step of producing, at the bonding face of one of either the substrate of interest or the handle substrate, a central cavity surrounded by a peripheral ring made of a material that is rigid at the treatment temperature, and a step of forming a layer of the thermoplastic polymer filling the central cavity.

Abstract: A method for directly bonding a first and a second substrate. The method comprises removing surface oxide layers from bonding faces of the first and of the second substrate, and hydrogen passivation of the bonding faces, then, in a vacuum, electron impact hydrogen desorption on the bonding faces followed by placement of the bonding faces in intimate contact with one another.

Abstract: A process for attaching a first substrate to a second substrate by direct bonding includes the successive steps of: a) providing the first and second substrates, each comprising a first surface and an opposite second surface, b) bonding the first substrate to the second substrate by direct bonding between the first surfaces of the first and second substrates, step b) being carried out under a first gaseous atmosphere having a first relative humidity level denoted by ?1, and c) applying a thermal annealing treatment to the bonded first and second substrates at a thermal annealing temperature of between 20° C. and 700° C., step c) being carried out under a second gaseous atmosphere having a second humidity level denoted by ?2, satisfying ?2??1.

Abstract: The invention relates to a method for checking an assembly comprising first (W1) and second (W2) joined substrates, comprising the following steps: a) transmitting an ultrasonic excitation signal towards the assembly by means of an ultrasonic transducer (301) located on the front face (A1) side of the first substrate (W1); b) measuring, using the transducer (301), an ultrasonic feedback signal including at least one echo (EF) of the excitation signal on the rear face (B2) of the second substrate (W2); c) calculating, using a processing circuit (303), a spectral signal representative of the change in frequency of an overall reflection coefficient of the assembly, defined as the ratio between the feedback signal measured in step b) and the excitation signal; and d) deriving, from said spectral signal, information relating to the quality of the bond between the first (W1) and second (W2) substrates.

Abstract: The invention relates to a method for fabricating a thermal detector (1), comprising the following steps: forming a first stack (10), comprising a thermal detector (20), a mineral sacrificial layer (15) and a thin encapsulation layer (16) having a lateral vent (17.1); forming a second stack (30), comprising a thin sealing layer (33) and a getter portion (34); eliminating the mineral sacrificial layer (15); assembling by direct bonding the thin sealing layer (33), brought into contact with the thin encapsulation layer (16) and blocking the lateral vent (17.1), the getter portion (34) being located in the lateral vent (17.1).

Abstract: The invention relates to a method for fabricating a detection device 1, comprising the following steps: forming a stack 10, comprising a thermal detector 20, a mineral sacrificial layer 15 and a thin encapsulation layer 16 having a lateral indentation 4; forming a stack 30, comprising a thin supporting layer 33, a getter portion 34 and a thin protective layer 35; directly bonding the thin supporting layer 33 to the thin encapsulation layer 16 so that the getter portion 34 is located in the lateral indentation 4; forming a vent 17, and eliminating the mineral sacrificial layer 15 and the thin protective layer 35; depositing a thin sealing layer 5, blocking the vent 17.

Abstract: A method for disassembling a stack of at least three substrates. The invention relates to the techniques for transferring thin films in the microelectronics field. It proposes a method for disassembling a stack of at least three substrates having between them two interfaces, one interface of which has an adhesion energy and an interface of which has an adhesion energy, with less than, the method comprising: 1) implementing a removal of material on the first substrate, in order to expose a surface of the second substrate, 2) transferring the stack onto a flexible adhesive film so that the surface has, with an adhesive layer of the film, an adhesion energy greater than, and 3) disassembling the third substrate at the interface between the second substrate and the third substrate. The method makes it possible to open the stack via the interface thereof with the highest adhesion energy.

Abstract: A process includes the successive steps of: a) providing first and second substrates, each including a first surface and an opposite, second surface, lateral edges connecting the first and second surfaces, b) bonding the first substrate to the second substrate by direct bonding with the first surfaces of the first and second substrates so as to form a bonding interface (IC), and making the lateral edges of the first and second substrates hydrophobic on either side of the bonding interface (IC).