Abstract: A display device including a first integrated circuit including: an assembly of light-emitting diodes, each diode including a vertical stack of a first semiconductor layer of a first conductivity type and of a second semiconductor layer of a second conductivity type; and on the side of a surface of the first circuit opposite to the first semiconductor layer, a connection structure including a dielectric layer having a plurality of identical or similar connection pads, regularly distributed across the entire surface of the first circuit, arranged therein, each diode having a first electrode in contact with at least one pad of the connection structure, and a second electrode in contact with a plurality of pads of the connection structure at the periphery of the plurality of diodes.

Abstract: A method is provided for producing, on a wafer-scale, a plurality of optoelectronic chips, including: providing a receiver substrate including a plurality of elementary zones, each being configured to contain one optoelectronic chip, and each including at least one coupling waveguide integrated into the receiver substrate and configured to be optically coupled to a first optoelectronic component; transferring a plurality of pads to the elementary zones such that the pads partially cover the at least one coupling waveguide; and producing the first optoelectronic component from the pads such that each first optoelectronic component is facing the at least one coupling waveguide of a corresponding elementary zone, and, following the transferring step, each pad of the plurality of pads extends over a set of at least two adjacent elementary zones, so as to partially cover the at least one coupling waveguide of each of the adjacent elementary zones.

Abstract: A method for manufacturing a handling device includes depositing a single layer of an adhesive on a first surface of a first wafer; depositing an antiadhesive layer on a first surface of a second wafer different from the first wafer; bringing into contact the first wafer and the second wafer, the bringing into contact taking place at the level of the single adhesive layer of the first wafer and the antiadhesive layer of the second wafer; separating the first wafer and the second wafer; the first wafer including the single adhesive layer forming a handling device. The bringing into contact of the first wafer and the second wafer is carried out at a temperature TC such that TC>Tg+100° C. where Tg is the glass transition temperature of the material composing the single adhesive layer of the first wafer.

Abstract: A method of transferring a thin film from a substrate to a flexible support that includes transfer of the flexible support by a layer of polymer, crosslinkable under ultraviolet light, directly on the thin film, the adhesion energy of the polymer evolving according to its degree of crosslinking, decreasing to an energy point d minimum adhesion achieved for a nominal crosslinking rate, then increasing for a crosslinking rate greater than the nominal crosslinking rate, then apply, on the polymer layer, an ultraviolet exposure parameterized so as to stiffen the polymer layer and have an adhesion energy between the thin film and the flexible support greater than an adhesion energy between the thin film and the substrate, then remove the substrate.

Abstract: A method for directly bonding a first and a second substrate. The method comprises removing surface oxide layers from bonding faces of the first and of the second substrate, and hydrogen passivation of the bonding faces, then, in a vacuum, electron impact hydrogen desorption on the bonding faces followed by placement of the bonding faces in intimate contact with one another.

Abstract: A method for manufacturing a semiconductor structure, including: direct bonding a substrate to be handled with a handle substrate via a bonding layer covering the handle substrate, to form a temporary structure capable of withstanding technological steps; disassembling the temporary structure at the bonding layer to separate the substrate to be handled from the handle substrate; and a prior depositing the bonding layer onto the handle substrate and/or onto the substrate to be handled, the bonding layer including a porous material including, an inorganic matrix and organic compounds connected or not to the matrix, and the disassembling is carried out by providing a thermal budget for disassembly to the intermediate structure, the providing resulting in a spontaneous disassembly of the temporary structure occurring at the bonding layer.

Abstract: A method of stripping a first substrate (1) to remove a first surface film (2) from it made of a thermoplastic polymer, the first surface film (2) having a first bond energy with the first substrate (1) at a first interface (3). The method comprising the following steps: bringing the first substrate (1) into contact with a second substrate (4) with a second surface film (5) made of a thermoplastic polymer, the second surface film (5) having a second bond energy with the second substrate (4) that is higher than the first bond energy, the contact being made through first and second surface films, formation of an assembly by bonding of the first and second surface films (2, 5) done such that the first and second surface films have a third bond energy higher than the first bond energy, separation of the assembly at the first interface (3).

Abstract: A method for the temporary bonding of a substrate of interest to a handle substrate, comprising a step of forming an assembly by placing the bonding faces of the substrate of interest and of the handle substrate into contact with one another via a thermoplastic polymer, and a step of treating the assembly at a treatment temperature that exceeds the glass transition temperature of the thermoplastic polymer. Prior to the assembly forming step, this method comprises: a step of producing, at the bonding face of one of either the substrate of interest or the handle substrate, a central cavity surrounded by a peripheral ring made of a material that is rigid at the treatment temperature, and a step of forming a layer of the thermoplastic polymer filling the central cavity.

Abstract: A method for direct bonding between at least a first and a second substrate, each of the first and second substrates containing a first and a second main surface, the method including: a first thinning of the edges of the first substrate over at least one portion of the circumference of the first substrate, at the first main surface of the first substrate; and placing the second main surface of the first substrate in contact with the second main surface of the second substrate such that a bonding wave propagates between the first and second substrates, securing the first and second substrates to one another by direct bonding such that portions of the second main surface of the first substrate located below the thinned portions of the first main surface of the first substrate are secured to the second substrate.

Abstract: The invention relates to a method for checking an assembly comprising first (W1) and second (W2) joined substrates, comprising the following steps: a) transmitting an ultrasonic excitation signal towards the assembly by means of an ultrasonic transducer (301) located on the front face (A1) side of the first substrate (W1); b) measuring, using the transducer (301), an ultrasonic feedback signal including at least one echo (EF) of the excitation signal on the rear face (B2) of the second substrate (W2); c) calculating, using a processing circuit (303), a spectral signal representative of the change in frequency of an overall reflection coefficient of the assembly, defined as the ratio between the feedback signal measured in step b) and the excitation signal; and d) deriving, from said spectral signal, information relating to the quality of the bond between the first (W1) and second (W2) substrates.

Abstract: A method for transferring a thin layer onto a destination substrate having a face with an adhesive layer includes formation of a polymer material interface layer on a second face of a thin layer, opposite a first face on which an adhesive is present. The method also includes assembly by gluing the interface layer and the adhesive layer and separation of the thin layer relative to a temporary support.

Abstract: A method for direct bonding an electronic chip onto a substrate or another electronic chip, the method including: carrying out a hydrophilic treatment of a portion of, a surface of the electronic chip and of a portion of a surface of the substrate or of the other electronic chip; depositing an aqueous fluid on the portion of the surface of the substrate or of the second electronic chip; depositing the portion of the surface of the electronic chip on the aqueous fluid; drying the aqueous fluid until the portion of the surface of the electronic chip is rigidly connected to the portion of the surface of the substrate or of the other electronic chip: and during at least part of the drying of the aqueous fluid, emitting ultrasound into the aqueous fluid through the substrate or the other electronic chip.

Abstract: A method is provided for producing, on a wafer-scale, a plurality of optoelectronic chips, including: providing a receiver substrate including a plurality of elementary zones, each being configured to contain one optoelectronic chip, and each including at least one coupling waveguide integrated into the receiver substrate and configured to be optically coupled to a first optoelectronic component; transferring a plurality of pads to the elementary zones such that the pads partially cover the at least one coupling waveguide; and producing the first optoelectronic component from the pads such that each first optoelectronic component is facing the at least one coupling waveguide of a corresponding elementary zone, and, following the transferring step, each pad of the plurality of pads extends over a set of at least two adjacent elementary zones, so as to partially cover the at least one coupling waveguide of each of the adjacent elementary zones.

Abstract: A process includes the successive steps of: a) providing first and second substrates, each including a first surface and an opposite, second surface, lateral edges connecting the first and second surfaces, b) bonding the first substrate to the second substrate by direct bonding with the first surfaces of the first and second substrates so as to form a bonding interface (IC), and making the lateral edges of the first and second substrates hydrophobic on either side of the bonding interface (IC).

Abstract: A process for attaching a first substrate to a second substrate by direct bonding includes the successive steps of: a) providing the first and second substrates, each comprising a first surface and an opposite second surface, b) bonding the first substrate to the second substrate by direct bonding between the first surfaces of the first and second substrates, step b) being carried out under a first gaseous atmosphere having a first relative humidity level denoted by ?1, and c) applying a thermal annealing treatment to the bonded first and second substrates at a thermal annealing temperature of between 20° C. and 700° C., step c) being carried out under a second gaseous atmosphere having a second humidity level denoted by ?2, satisfying ?2??1.

Abstract: A process for attaching a first substrate to a second substrate by direct bonding, the first and second substrates comprising first and second surfaces, respectively, possessing an initial bonding energy. The process includes the successive steps of: providing the first and second substrates, attaching the first substrate to the second substrate by direct bonding with the first and second surfaces, at least partially debonding the first and second substrates so as to generate electrostatic charges on portions of the first and second surfaces, and rebonding the first substrate to the second substrate by direct bonding with said portions of the first and second surfaces.

Abstract: A method for manufacturing a semiconductor structure, including: direct bonding a substrate to be handled with a handle substrate via a bonding layer covering the handle substrate, to form a temporary structure capable of withstanding technological steps: disassembling the temporary structure at the bonding layer to separate the substrate to be handled from the handle substrate; and a prior depositing the bonding layer onto the handle substrate and/or onto the substrate to be handled, the bonding layer including a porous material including, an inorganic matrix and organic compounds connected or not to the matrix, and the disassembling is carried out by providing a thermal budget for disassembly to the intermediate structure, the providing resulting in a spontaneous disassembly of the temporary structure occurring at the bonding layer.

Abstract: A method for recycling a substrate holder adapted to receive a substrate for at least one deposition step of a layer of a material on the substrate also leading to the depositing of a layer of a material on the substrate holder, the method including implanting ion species through a receiving surface of the substrate holder so as to form at least one buried weakened plane delimiting a thin film underneath the receiving surface of the substrate holder, exfoliating the thin film from the substrate holder so as to break up the thin film, and removing a stack including at least one layer of a material deposited on the thin film resulting from the at least one deposition step of the layer of a material on the substrate.

Abstract: The method includes the steps of: a) providing first and second layers, each including a bonding surface, at least one of said layers including recesses and the bonding surface of one of the two layers being formed at least partially of a silicon oxide film; b) bringing the bonding surfaces into contact with one another, such as to create a direct bonding interface; c) filling at least one recess with a fluid including water molecules; and d) applying a thermal budget such as to generate bond annealing. Further relating to a structure including a direct bonding interface between two bonding surfaces of two layers, the bonding surface of at least one of the layers being formed at least partially of a silicon oxide film, and the direct bonding interface includes recesses filled with a fluid including water molecules.

Abstract: A method for direct bonding an electronic chip onto a substrate or another electronic chip, the method including: carrying out a hydrophilic treatment of a portion of, a surface of the electronic chip and of a portion of a surface of the substrate or of the other electronic chip; depositing an aqueous fluid on the portion of the surface of the substrate or of the second electronic chip; depositing the portion of the surface of the electronic chip on the aqueous fluid; drying the aqueous fluid until the portion of the surface of the electronic chip is rigidly connected to the portion of the surface of the substrate or of the other electronic chip: and during at least part of the drying of the aqueous fluid, emitting ultrasound into the aqueous fluid through the substrate or the other electronic chip.