Abstract: A method for determining a minimum tension compensation stress which will have a membrane of a thickness of less than or equal to one micrometer, secured to a frame, having, in the absence of any external stress, a desired deflection. The membrane can be made as planar as possible in absence of any external stress, and its thickness can be less than or equal to one micrometer.

Abstract: A method for making a support of at least one substrate, including: making a stack including at least two substrates, each of the two substrates including two opposite main faces, both substrates being secured to each other such that one of the main faces of a first of the two substrates is positioned facing one of the main faces of the second of the two substrates and against an etch-stop material; etching, through the first of the two substrates and with stop on the etch-stop material, at least one location that can receive a substrate that can be supported by the support.

Abstract: Adhesion by molecular bonding of two free surfaces of first and second substrates, for example formed by monocrystalline silicon wafers, comprises at least successively: a cleaning step of the two free surfaces with hydrofluoric acid in vapor phase to make the two free surfaces hydrophobic, a rinsing step of said free surfaces with deionized water with a time less than or equal to 30 seconds a step of bringing said free surfaces into contact.

Abstract: A method for determining a minimum tension compensation stress which will have a membrane of a thickness of less than or equal to one micrometer, secured to a frame, having, in the absence of any external stress, a desired deflection. The membrane can be made as planar as possible in absence of any external stress, and its thickness can be less than or equal to one micrometer.

Abstract: The invention relates to a process for producing a bond between a first and a second substrate. The process includes preparing surfaces of the substrates to be assembled, and attaching the surfaces to form an assembly of these two surfaces, by direct molecular bonding. The assembly is then heat treated, which includes maintaining the temperature within the range of 50° C. to 100° C. for at least one hour.

Abstract: A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallisation of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.

Abstract: A method of producing a strained layer on a substrate includes assembling a layer with a first structure or first means of straining including at least one substrate or one layer capable of being deformed within a plane thereof under the influence of an electric or magnetic field or a photon flux. The layer is strained by modifying the electric or magnetic field or the photon flux. The strained layer is assembled with a transfer substrate and all or part of the first straining structure is removed.

Abstract: Under consideration here is a method for the production of periodic nanostructuring on one of the surfaces of a substrate (10), presenting a periodic network of dislocations, embedded within a crystalline area (4) located in the neighborhood of an interface (5) between the crystalline material surfaces of two components (1, 2) assembled by bonding to form the substrate (10). It comprises the following steps: formation, in the dislocations (3), of implants (6) made of a material other than that of the crystalline area (4); irradiation of the substrate (10) with electromagnetic waves (11) in order to cause absorption of electromagnetic energy localized in the implants (6), this absorption leading to the appearance of the periodic nanostructuring (12) on the surface of the substrate (10).

Abstract: A method of producing a strained layer on a substrate includes assembling a layer with a first structure or first means of straining including at least one substrate or one layer capable of being deformed within a plane thereof under the influence of an electric or magnetic field or a photon flux. The layer is strained by modifying the electric or magnetic field or the photon flux. The strained layer is assembled with a transfer substrate and all or part of the first straining structure is removed.

Abstract: Method to produce a structure consisting of depositing a material by columnar epitaxy on a crystalline face of a substrate (2), of continuing so that the columns (4) give a continuous layer (5). The surface is provided with a period array of bumps (3) on a nanometric scale, each bump (3) having a support zone (35) and being obtained from an array of crystalline defects and/or strain fields created within a crystalline region (16) located in the vicinity of a bonding interface (15) between two crystalline elements (11, 12) whose crystalline lattices have a twist and/or tilt angle and/or have interfacial lattice mismatch, able to condition the period (38) of the array of bumps (3). The period (38) of the array, the height (36) of the bumps and the size of their support zone (35) being adjusted so that the continuous layer (40) has a critical thickness that is greater than that obtained using epitaxy without the bumps.

Abstract: The invention relates to a process for producing a bond between a first and a second substrate (2, 4), comprising: a) a step of preparing surfaces (6, 8) to be assembled, b) an assembly of these two surfaces, by direct molecular bonding, c) a heat treatment step involving at least maintaining the temperature within the range of 50° C. to 100° C. for at least one hour.

Abstract: The invention relates to a method for producing a support comprising nanoparticles (22) for the growth of nanostructures (23), said nanoparticles being organised periodically, the method being characterised in that it comprises the following steps: providing a support comprising, in the vicinity of one of its surfaces, a periodic array of crystal defects and/or stress fields (18), depositing, on said surface, a continuous layer (20) of a first material capable of catalysing the nanostructure growth reaction, fractionating the first material layer (20) by a heat treatment so as to form the first material nanoparticles (22).

Abstract: The invention relates to a method for producing a support comprising nanoparticles (22) for the growth of nanostructures (23), said nanoparticles being organised periodically, the method being characterised in that it comprises the following steps: providing a support comprising, in the vicinity of one of its surfaces, a periodic array of crystal defects and/or stress fields (18), depositing, on said surface, a continuous layer (20) of a first material capable of catalysing the nanostructure growth reaction, fractionating the first material layer (20) by a heat treatment so as to form the first material nanoparticles (22). The invention also relates to a method for producing nanostructures from said support.

Abstract: Under consideration here is a method for the production of periodic nanostructuring on one of the surfaces of a substrate (10), presenting a periodic network of dislocations, embedded within a crystalline area (4) located in the neighbourhood of an interface (5) between the crystalline material surfaces of two components (1, 2) assembled by bonding to form the substrate (10). It comprises the following steps: formation, in the dislocations (3), of implants (6) made of a material other than that of the crystalline area (4); irradiation of the sbstrate (10) with electromagnetic waves (11) in order to cause absorption of electromagnetic energy localised in the implants (6), this absorption leading to the appearance of the periodic nanostructuring (12) on the surface of the substrate (10).

Abstract: Method to produce a structure consisting of depositing a material by columnar epitaxy on a crystalline face of a substrate (2), of continuing so that the columns (4) give a continuous layer (5). The surface is provided with a period array of bumps (3) on a nanometric scale, each bump (3) having a support zone (35) and being obtained from an array of crystalline defects and/or strain fields created within a crystalline region (16) located in the vicinity of a bonding interface (15) between two crystalline elements (11, 12) whose crystalline lattices have a twist and/or tilt angle and/or have interfacial lattice mismatch, able to condition the period (38) of the array of bumps (3). The period (38) of the array, the height (36) of the bumps and the size of their support zone (35) being adjusted so that the continuous layer (40) has a critical thickness that is greater than that obtained using epitaxy without the bumps.

Abstract: Adhesion by molecular bonding of two free surfaces of first and second substrates, for example formed by monocrystalline silicon wafers, comprises at least successively: a cleaning step of the two free surfaces with hydrofluoric acid in vapor phase to make the two free surfaces hydrophobic, a rinsing step of said free surfaces with deionized water with a time less than or equal to 30 seconds a step of bringing said free surfaces into contact.

Abstract: This invention relates to a method for separating at least two wafers (1, 2) bonded together to form a stacked structure. At least one bending force is applied to all or part of the stacked structure to separate the stacked structure into two parts along a required separation plane. Application particularly for producing a thin semiconducting layer.

Abstract: The invention relates to a method for producing a semiconducting structure including: controlled formation, through a mask (31), in a first substrate (30) in a semiconducting material, of at least one first area in an insulating material (36), up to the level of the lower surface (35) of the mask, before or during the removal of the mask.

Abstract: The present invention relates to a method for transferring at least one element from a donor substrate to a target substrate (40). According to the invention, an element to be transferred is made integral with a handle substrate (30) through the intermediary of a layer of glue (32) capable of being degraded and in which degradation of the glue layer is carried out during a step for freeing the element to be transferred. Application to the transfer of components.

Abstract: This invention relates to a method for separating at least two wafers (1, 2) bonded together to form a stacked structure. At least one bending force is applied to all or part of the stacked structure to separate the stacked structure into two parts along a required separation plane. Application particularly for producing a thin semiconducting layer.