Abstract: A method for direct bonding between at least a first and a second substrate, each of the first and second substrates containing a first and a second main surface, the method including: a first thinning of the edges of the first substrate over at least one portion of the circumference of the first substrate, at the first main surface of the first substrate; and placing the second main surface of the first substrate in contact with the second main surface of the second substrate such that a bonding wave propagates between the first and second substrates, securing the first and second substrates to one another by direct bonding such that portions of the second main surface of the first substrate located below the thinned portions of the first main surface of the first substrate are secured to the second substrate.

Abstract: This process includes steps: a) providing a carrier substrate including a receiving face; b) depositing a nonstick coating on the receiving face, the nonstick coating including a central region and a peripheral region; and c) trimming the carrier substrate so as to remove the peripheral region of the nonstick coating and to form a recess on the periphery of the carrier substrate, in order to obtain the handle wafer. Also relates to a process for temporarily bonding a substrate to a handle wafer fabricated using the process described above. Furthermore relates to a handle wafer fabricated using the process described above.

Abstract: This method includes steps a) providing the first structure and second structure, the first structure including a surface on which a silicon layer is formed; b) bombarding the silicon layer by a beam (F) of species configured to reach the surface of the first structure, and to preserve a part of the silicon layer with a surface roughness of less than 1 nm RMS on completion of the bombardment; c) bonding the first structure and second structure by direct bonding between the part of the silicon layer preserved in step b) and the second structure, steps b) and c) being executed in the same chamber subjected to a vacuum of less than 10?2 mbar.

Abstract: A method for manufacturing a handling device includes depositing a single layer of an adhesive on a first surface of a first wafer; depositing an antiadhesive layer on a first surface of a second wafer different from the first wafer; bringing into contact the first wafer and the second wafer, the bringing into contact taking place at the level of the single adhesive layer of the first wafer and the antiadhesive layer of the second wafer; separating the first wafer and the second wafer; the first wafer including the single adhesive layer forming a handling device. The bringing into contact of the first wafer and the second wafer is carried out at a temperature TC such that TC>Tg°100°C. where Tg is the glass transition temperature of the material composing the single adhesive layer of the first wafer.

Abstract: This method includes the following steps: a) providing a first structure successively including a substrate, an electronic device, a dielectric layer, and a first semiconductor layer; b) providing a second structure successively including a substrate, an active layer, a dielectric layer, and a second semiconductor layer, the active layer being designed to form an electronic device; c) bonding the first and second structures by direct bonding between the first and second semiconductor layers so as to form a bonding interface; d) removing the substrate of the second structure so as to expose the active layer; e) introducing dopants into the first and second semiconductor layers so as to form a ground plane.

Abstract: This method includes the following steps: a) providing a first structure successively including a substrate, an electronic device, a dielectric layer, and a first semiconductor layer; b) providing a second structure successively including a substrate, an active layer, a dielectric layer, and a second semiconductor layer, the active layer being designed to form an electronic device; c) bonding the first and second structures by direct bonding between the first and second semiconductor layers so as to form a bonding interface; d) removing the substrate of the second structure so as to expose the active layer; e) introducing dopants into the first and second semiconductor layers so as to form a ground plane.

Abstract: This method includes steps a) providing the first structure and second structure, the first structure including a surface on which a silicon layer is formed; b) bombarding the silicon layer by a beam (F) of species configured to reach the surface of the first structure, and to preserve a part of the silicon layer with a surface roughness of less than 1 nm RMS on completion of the bombardment; c) bonding the first structure and second structure by direct bonding between the part of the silicon layer preserved in step b) and the second structure, steps b) and c) being executed in the same chamber subjected to a vacuum of less than 10?2 mbar.

Abstract: The invention relates to a method for directly adhering a lower substrate to an upper substrate which includes the following steps: a) providing a mounting; b) positioning the lower substrate on the mounting, the mounting being configured such as to raise a portion of the lower substrate; c) positioning the upper substrate above the lower substrate; d) allowing the upper substrate to fall by gravity onto the lower substrate such as to form an initial contact point between the upper substrate and the lower substrate, located on the raised portion of the lower substrate; and e) completing the contact between the upper substrate and the lower substrate such as to adhere the upper substrate to the lower substrate by direct adhesion.

Abstract: This process includes steps: a) providing a carrier substrate including a receiving face; b) depositing a nonstick coating on the receiving face, the nonstick coating including a central region and a peripheral region; and c) trimming the carrier substrate so as to remove the peripheral region of the nonstick coating and to form a recess on the periphery of the carrier substrate, in order to obtain the handle wafer. Also relates to a process for temporarily bonding a substrate to a handle wafer fabricated using the process described above. Furthermore relates to a handle wafer fabricated using the process described above.

Abstract: A method for manufacturing a flexible structure including implanting ionic species in first and second source substrates so as to form first and second embrittlement regions respectively, delimiting first and second thin films, providing a flexible substrate, the stiffness R of which is less than or equal to 107 GPa·?m3, securing the first and second thin films to the first and second faces of the flexible substrate respectively so as to form a stack including the flexible structure delimited by the first and second embrittlement regions, the flexible structure having a stiffening effect suitable for allowing transfers of the first and second thin films, and applying a thermal budget so as to transfer the first and second thin films onto the flexible substrate.

Abstract: A method for producing a holder of at least one substrate from a first and a second plate, each including first and second parallel flat faces, the method including: a) delimitation on the first face of the second plate of plural surfaces by a non-bondable area in which a direct bonding with a face of the first plate is prevented; b) bringing the first face of the second plate into contact with the first face of the first plate; c) direct bonding between the first faces except in the non-bondable area; and d) removal of the portions of the second plate located vertically below surfaces inside the non-bondable area.

Abstract: The process wherein steps consisting in: a) implanting ionic species through a substrate with at least on its surface, a crystalline layer of SixGe1-x, so as to form a weakened plane in said layer, bounding a seed film; b) depositing an amorphous layer of SiyGe1-y on the seed film; c) applying a splitting process so as to obtain a detached structure comprising the seed film and the amorphous SiyGe1-y layer on the one hand, and a negative of the substrate on the other hand; and d) applying, to the detached structure, a heat treatment so as to obtain a thick crystalline layer with a thickness larger than 10 microns, which layer is not secured to the negative. The invention also relates to a structure wherein a crystalline silicon substrate wherein a seed film and amorphous silicon layer containing a stressed region comprising implanted ions.

Abstract: The method includes the steps of: a) providing first and second layers, each including a bonding surface, at least one of said layers including recesses and the bonding surface of one of the two layers being formed at least partially of a silicon oxide film; b) bringing the bonding surfaces into contact with one another, such as to create a direct bonding interface; c) filling at least one recess with a fluid including water molecules; and d) applying a thermal budget such as to generate bond annealing. Further relating to a structure including a direct bonding interface between two bonding surfaces of two layers, the bonding surface of at least one of the layers being formed at least partially of a silicon oxide film, and the direct bonding interface includes recesses filled with a fluid including water molecules.

Abstract: A method of transferring a layer including: a) providing a layer joined to an initial substrate with a binding energy E0; b) bonding a front face of the layer on an intermediate substrate according to an intermediate bonding energy Ei; c) detaching the initial substrate from the layer; e) bonding a rear face onto a final substrate according to a final bonding energy Ef; and f) debonding the intermediate substrate from the layer to transfer the layer onto the final substrate; step b) comprising a step of forming siloxane bonds Si—O—Si, step c) being carried out in a first anhydrous atmosphere and step f) being carried out in a second wet atmosphere such that the intermediate bonding energy Ei takes a first value Ei1 in step c) and a second value Ei2 in step f), with Ei1>E0 and Ei2<Ef.

Abstract: The present invention relates to a bipolar battery comprising at least two electrochemical cells (C1, C2) stacked on top of one another, each collector (13, 21) comprising on its periphery at least one bead (23) of an electrically insulating material also forming a peripheral zone of the wall impermeable to the electrolyte. According to the invention, each impermeable wall is obtained by a technique chosen from direct bonding, anodic bonding between a bead of the bipolar collector and the bead of the adjacent collector, and eutectic bonding between a layer made of metal or a eutectic metal alloy deposited on a bead of the bipolar collector and a layer made of metal or eutectic metal alloy deposited on a bead of the adjacent collector.

Abstract: A method of transferring a layer including: a) providing a layer joined to an initial substrate with a binding energy E0; b) bonding a front face of the layer on an intermediate substrate according to an intermediate bonding energy Ei; c) detaching the initial substrate from the layer; e) bonding a rear face onto a final substrate according to a final bonding energy Ef; and f) debonding the intermediate substrate from the layer to transfer the layer onto the final substrate; step b) comprising a step of forming siloxane bonds Si—O—Si, step c) being carried out in a first anhydrous atmosphere and step f) being carried out in a second wet atmosphere such that the intermediate bonding energy Ei takes a first value Ei1 in step c) and a second value Ei2 in step f), with Ei1>E0 and Ei2<Ef.

Abstract: A method for making a support of at least one substrate, including: making a stack including at least two substrates, each of the two substrates including two opposite main faces, both substrates being secured to each other such that one of the main faces of a first of the two substrates is positioned facing one of the main faces of the second of the two substrates and against an etch-stop material; etching, through the first of the two substrates and with stop on the etch-stop material, at least one location that can receive a substrate that can be supported by the support.

Abstract: A method for recycling a substrate holder adapted to receive a substrate for at least one deposition step of a layer of a material on the substrate also leading to the depositing of a layer of a material on the substrate holder, the method including implanting ion species through a receiving surface of the substrate holder so as to form at least one buried weakened plane delimiting a thin film underneath the receiving surface of the substrate holder, exfoliating the thin film from the substrate holder so as to break up the thin film, and removing a stack including at least one layer of a material deposited on the thin film resulting from the at least one deposition step of the layer of a material on the substrate.

Abstract: A method for producing a holder of at least one substrate from a first and a second plate, each including first and second parallel flat faces, the method including: a) delimitation on the first face of the second plate of plural surfaces by a non-bondable area in which a direct bonding with a face of the first plate is prevented; b) bringing the first face of the second plate into contact with the first face of the first plate; c) direct bonding between the first faces except in the non-bondable area; and d) removal of the portions of the second plate located vertically below surfaces inside the non-bondable area.

Abstract: The invention relates to a process for producing a bond between a first and a second substrate. The process includes preparing surfaces of the substrates to be assembled, and attaching the surfaces to form an assembly of these two surfaces, by direct molecular bonding. The assembly is then heat treated, which includes maintaining the temperature within the range of 50° C. to 100° C. for at least one hour.