Abstract: The present disclosure relates to an electrolyte product (1), formed as a solid or semi-solid layer, comprising a polymer-based matrix, having dispersed therein an amount of an electrolyte salt composition (4) and an amount of an additive salt composition (5). The disclosure further relates to a method of manufacturing a battery cell product, a battery cell product comprising the electrolyte product, and a battery product comprising a plurality of battery cell products.

Abstract: The present disclosure relates to an electrode (1) for a secondary lithium metal battery, the electrode comprises: a current collector (2), an anode metal layer (3) comprising lithium, and at least one graded metal alloy layer (4a,4b) that extends along one or more opposing faces of the anode metal layer. The graded metal alloy layer comprising a mixture of lithium and a further metal composition, whereby the concentration of lithium relative to the further metal composition decreases outwardly from the anode metal layer. The disclosure further relates to a battery comprising the electrode and a method of manufacturing.

Abstract: The present disclosure relates to a method of manufacturing an electrode (In) comprising a current collector element (10) and a coating of a solid or semi-solid electrolyte (20) and the corresponding electrode part. The method comprises depositing (300) an amount of an anode metal composition as a layer between the current collector element and the solid state electrolyte covering the current collector element by an electroplating process that involves a directed transfer of anode metal ions through the electrolyte coat, wherein the solid state electrolyte comprises i) a first layer covering the current collector element that, at least initially contains, one or more additives forming a solid electrolyte interphase layer by reaction with the plated anode metal composition, and ii) a second layer covering the first layer that is resistive to inward permeation of solvent comprised in the plating electrolyte (302). The disclosure further relates to a battery comprising the electrode part.

Abstract: The present disclosure provides as an electrode 1, comprising a 3D composite current collector 2 having an electrically conductive substrate current collector 3 with a plurality of laterally distributed electrically conductive upstanding scaffolding elements 4 that comprises structures 6 of agglomerated carbon nanotubes covered by a passivation layer 10 for shielding the carbon nanotubes 7 from a direct contact with an electrode or electrolyte material, whereby said passivation layer comprises a composition allowing electron transport to/from the structure of agglomerated carbon nanotubes. In a preferred embodiment the electrode is coated with a stack of functional battery layers including one or more of a seed layer 20, an anode metal layer 30, and an anode passivation layer 40. The present disclosure further relates to a manufacturing method and an energy storage device comprising the electrode.

Abstract: The present inventive concept relates to area-selective deposition (ASD) area-selective atomic layer deposition (AS-ALD) processes, and applications thereof. Methods of selectively depositing metal oxides and metal oxynitrides, such as TiO2 and TiON, on nitride (SiN) as a growth area vs. oxide (SiO2) as a nongrowth area, and applications thereof in, for example, self-aligned block (SAB) patterning and self-aligned multiple patterning (SAMP) processes are described.

Abstract: The present disclosure relates to a method of manufacturing a thin film device. A multilevel nanoimprint lithography template is transferred into a thin film stack comprising an electrode layer and a blanket sacrificial layer covering the electrode layer. The template is transferred, thereby patterning the device and exposing a predefined insulating area of the electrode while keeping a remaining portion of the sacrificial layer that covers a pre-defined electrical contact area of the electrode. An area selective atomic layer deposition (ALD) process is performed to selectively cover the exposed area of the electrode layer with a cover layer. After removing the remaining portion of the sacrificial layer the electrical contact area of the electrode layer is exposed for further processing.

Abstract: The present disclosure concerns an atomic layer deposition device for area-selective deposition of a target material layer onto a deposition area of a substrate surface further comprising a non-deposition area. In use the substrate is conveyed along a plurality of deposition and separator spaces including at least two gas separator spaces provided with at least a separator gas inlet and a separator drain for, in use exposing the substrate to a separator gas flow. Wherein at least one of the gas separator spaces forms a combined separator-inhibitor gas flow comprising a separator gas and inhibitor moieties. The inhibitor moieties selectively adhering to the non-deposition area to form an inhibition layer reducing adsorption of precursor moieties. In a preferred embodiment the device includes a back-etching space to increase selectivity of the deposition process.

Abstract: A plasma source has an outer surface, interrupted by an aperture for delivering an atmospheric plasma from the outer surface. A transport mechanism transports a substrate in parallel with the outer surface, closely to the outer surface, so that gas from the atmospheric plasma may form a gas bearing between the outer surface the and the substrate. A first electrode of the plasma source has a first and second surface extending from an edge of the first electrode that runs along the aperture. The first surface defines the outer surface on a first side of the aperture. The distance between the first and second surface increasing with distance from the edge.

Abstract: Method of performing atomic layer deposition. The method comprises supplying a precursor gas towards a substrate, using a deposition head including one or more gas supplies, including a precursor gas supply. The precursor gas reacts near a surface of the substrate for forming an atomic layer. The deposition head has an output face comprising the gas supplies, which at least partly faces the substrate surface during depositing the atomic layer. The output face has a substantially rounded shape defining a movement path of the substrate. The precursor-gas supply is moved relative to the substrate by rotating the deposition head while supplying the precursor gas, for depositing a stack of atomic layers while continuously moving in one direction. The surface of the substrate is kept contactless with the output face by means of a gas bearing.

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Abstract: A biosensor device for detecting biological particles, the biosensor device comprising a substrate, a regular pattern of pores formed in the substrate, and a plurality of sensor active structures each of which being arranged on a surface of a corresponding one of the pores, wherein each of the plurality of sensor active structures is sensitive to specific biological particles and is adapted to modify electromagnetic radiation interaction properties in the event of the presence of the respective biological particles.

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Abstract: The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones.

Abstract: A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.

Abstract: A plasma source has an outer surface, interrupted by an aperture for delivering an atmospheric plasma from the outer surface. A transport mechanism transports a substrate in parallel with the outer surface, closely to the outer surface, so that gas from the atmospheric plasma may form a gas bearing between the outer surface the and the substrate. A first electrode of the plasma source has a first and second surface extending from an edge of the first electrode that runs along the aperture. The first surface defines the outer surface on a first side of the aperture. The distance between the first and second surface increasing with distance from the edge.

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory.

Abstract: A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.