Abstract: Magnetic heads comprising at least one core portion of polycrystalline MnZn-ferroferrite material exhibit a very low so-called "rubbing noise" level if the average grain size of the material ranges between 0.2 and 3.0 micrometers. The rubbing noise level of these heads is even lower than the electronic noise level if the average grain size of the material ranges between 0.5 and 2.0 micrometers. By virtue thereof, the heads can very suitably be used in the frequency range from 5 to 100 MHz.

Abstract: A furnace (1) for Rapid Thermal Processing of a wafer (7), characterized in that the wafer (7) is heated by lamps (9), and the heat radiation is reflected by an optical switching device (15,17) which is in the reflecting state during the heating stage. During the cooling stage of the wafer (7), the heat is absorbed by the switching device (15,17), which is in the heat-absorbing state. The switching device comprises a switching film of a trivalent metal, such as gadolinium, which is capable of forming hydrides by an exchange of hydrogen. Dependent on the hydrogen concentration of the hydrides, the film reflects or absorbs heat. The hydrogen content in the switching film can be changed by varying the partial pressure of hydrogen, or, preferably, by varying the potential of the switching film forming part of a stack of layers in an electrochemical cell.