Abstract: The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for applications in power management. In these applications, the inductors are at least 5 of the order of 1 ?H, and must have an equivalent series resistance of less than 0.1 ?. For this reason, those inductors are always bulky components, of a typical size of 2×2×1 mm 3, which make a fully integrated solution impossible. On the other hand, integrated inductors, which can monolithically be integrated, do exist. However, these inductors suffer either from low inductance values, or 10 very-high DC resistance values.

Abstract: A biosensor device (100) for detecting biological particles, the biosensor device (100) comprising a substrate (102), a regular pattern of pores (104) formed in the substrate (102), and a plurality of sensor active structures (106) each of which being arranged on a surface of a corresponding one of the pores (104), wherein each of the plurality of sensor active structures (106) is sensitive to specific biological particles and is adapted to modify electromagnetic radiation interaction properties in the event of the presence of the respective biological particles.

Abstract: A method of forming a dielectric layer on a further layer of a semiconductor device is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer, the dielectric precursor compound comprising a metal ion from the group consisting of Yttrium and the Lanthanide series elements, and the further precursor compound comprising a metal ion from the group consisting of group IV and group V metals; and chemically converting the dielectric precursor compound and the further precursor compound into a dielectric compound and a further compound respectively, the further compound self-assembling during said conversion into a plurality of nanocluster nuclei within the dielectric layer formed from the first dielectric precursor compound. The nanoclusters may be dielectric or metallic in nature. Consequently, a dielectric layer is formed that has excellent charge trapping capabilities.

Abstract: A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high-permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance whilst being efficient in utilisation of semiconductor real estate.

Abstract: A nozzle for jetting devices is described comprising e.g. one patterned silicon substrate enabling semiconductor mass production. The method of manufacturing the nozzle is characterized by using one mask layer deposited on the silicon substrate. The etching of the silicon substrate is done by means of a first isotropic etching step and a second anisotropic etching step through the mask layer, resulting in a perfectly aligned nozzle.

Abstract: An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. —The capacitor-electrode layers are alternatingly connected to a respective one of two capacitor terminals provided on the first or second substrate side. The trench capacitor and the through-substrate via are formed in respective trench openings and via openings in the semiconductor substrate, which have an equal lateral extension exceeding 10 micrometer. This structure allows, among other advantages, a particularly cost-effective fabrication of the integration substrate because the via openings and the trench openings in the substrate can be fabricated simultaneously.

Abstract: The invention relates to an electric device including an electric element, the electric element comprising a first electrode (104) having a first surface (106) and a pillar (108), the pillar extending from the first surface in a first direction (110), the pillar having a length measured from the first surface parallel to the first direction, the pillar having a cross section (116) perpendicular to the first direction and the pillar having a sidewall surface (120) enclosing the pillar and extending in the first direction, characterized in—that, the pillar comprises any one of a score (124) and protrusion (122) extending along at least part of the length of the pillar for giving the pillar (108) improved mechanical stability. The electrode allows electrical elements such as capacitors, energy storage devices or diodes to be made with improved properties in a cost effective way.

Abstract: An electronic device is provided which comprises a DC-DC converter. The DC-DC converter comprises at least one solid-state rechargeable battery (B1, B2) for storing energy for the DC-DC conversion and an output capacitor (C2).

Abstract: The invention relates to an energy system comprising an electrochemical energy source, wherein said electrochemical energy source comprises at least one assembly of a first electrode, a second electrode, and an intermediate solid-state electrolyte separating said first electrode and said second electrode. The invention also relates to an electronic module provided with such an energy system. The invention further relates to an electronic device provided with such an energy system. Moreover, the invention relates to a method of manufacturing of such an energy system.

Abstract: The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A switching unit is provided that comprises a plurality of switching elements electrically interconnected between different capacitor-electrode layers of the trench filling. A control unit is connected with the switching unit and configured to generate and provide to the switching unit respective control signals for forming a respective one of a plurality of multi-capacitor configurations using the capacitor-electrode layers of the trench filling.

Abstract: The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer. This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material.

Abstract: The electronic device comprises a semiconductor substrate (10) with at a first side (1) a circuit of semiconductor elements (20). The substrate (10) is present between a carrier (40) and an encapsulation (70), so that the first side (1) of the substrate (10) faces the carrier (40). The circuit of semiconductor elements (20) is coupled with conductor tracks (25) to a metallization (82) in a groove (80) in the encapsulation (70), which metallization (82) extends to terminals (90) at an outside of the encapsulation (70). At least one further electrical element (120) is defined between the first side (1) of the semiconductor substrate (10) and the encapsulation (70). This further element (120) is provided with at least one conductor track (65) extending to the metallization (82) in the groove (80) so as to incorporate the further element (120) in the circuit of semiconductor elements (20) on the first side (1) of the substrate (10).

Abstract: The invention relates to a method for the manufacture of a thin-layer battery stack on a three-dimensional substrate. The invention further relates to a thin-layer battery stack on a three-dimensional substrate obtainable by such a method. Moreover, the invention relates to a device comprising such a battery stack. The method according to the invention provides a rapid way to manufacture battery stacks on three-dimensional substrate, and the obtained products are of superior quality.

Abstract: A method of forming a conductive trench such as a through-silicon-via in a silicon wafer is disclosed. The method includes depositing a mask over a wafer surface; patterning the mask to expose a portion of the wafer; exposing the wafer to a first etching step in which a first portion of the trench is formed; exposing the wafer to an second etching step in which a tapered second portion of the trench is formed, where the first portion has a continuously non-increasing width from the wafer surface to the second portion; and filling the trench with a conductive material. A silicon wafer including such a conductive trench is also disclosed.

Abstract: In a method and device for etching a substrate by a plasma, the plasma is generated and accelerated at substantially sub-atmospheric pressure between a cathode and an anode of a plasma source (1) in a channel of system of at least one conductive cascaded plate between the cathode and anode. The plasma is released from the plasma source to a treatment chamber (2) in which the substrate (9) is exposed to the plasma. The treatment chamber is sustained at a reduced, near vacuum pressure during operation.

Abstract: In the method a first layer, particularly of amorphous silicon, is deposited on the surface of a substrate with trenches. Part of this surface is covered with a protective layer. The first layer is thereafter maskless removed with a dry etching treatment on the substrate surface while it is kept within the trench.

Abstract: An electronic device comprising at least one die stack having at least a first die (D1) comprising a first array of light emitting units (OLED) for emitting light, a second layer (D2) comprising a second array of via holes (VH) and a third die (D3) comprising a third array of light detecting units (PD) for detecting light from the first array of light emitting units (OELD) is provided. The second layer (D2) is arranged between the first die (D1) and the third die (D3). The first, second and third array are aligned such that light emitted from the first array of light emitting units (OLED) passed through the second array of via holes (VH) and is detected by the third array of light detecting units (PD). The first array of light emitting units and/or the third array of light detecting units are manufactured based on standard semiconductor manufacturing processes.

Abstract: The invention relates to an energy system comprising an electrochemical energy source, wherein said electrochemical energy source comprises at least one assembly of a first electrode, a second electrode, and an intermediate solid-state electrolyte separating said first electrode and said second electrode. The invention also relates to an electronic module provided with such an energy system. The invention further relates to an electronic device provided with such an energy system. Moreover, the invention relates to a method of manufacturing of such an energy system.

Abstract: The invention relates to a method for the manufacture of a thin film electrochemical energy source. The invention also relates to a thin film electrochemical energy source. The invention also relates to an electrical device comprising such a thin film electrochemical energy source. The invention enables a more rapid and efficient manufacture of thin film batteries and devices containing such batteries.

Abstract: The invention relates to an electrochemical energy source comprising at least one assembly of: a first electrode, a second electrode, and an intermediate solid-state electrolyte separating said first electrode and said second electrode. The invention also relates to an electronic module provided with such an electrochemical energy source. The invention further relates to an electronic device provided with such an electrochemical energy source. Moreover, the invention relates to a method of manufacturing of such an electrochemical energy source.