Abstract: A semiconductor device and a method for manufacturing the same are provided in the present invention. The semiconductor device includes a substrate, a gate structure on the substrate and two spacers on both sidewalls of the gate structure. Each spacer comprises an inner first spacer portion made of SiCN and an outer second spacer portion made of SiOCN.

Abstract: A touch display device includes a transparent substrate, a first ink layer, a shading layer, and a decorative layer. The transparent substrate has a visible region and an non-visible region. The non-visible region is located at the peripheral of the visible region. The first ink layer is disposed on the non-visible region of the transparent substrate. The shading layer is disposed on the first ink layer. The decorative layer is disposed on a portion of the first ink layer and located between the first ink layer and the shading layer. The optical density of the first ink layer is between 0.3 and 0.67.

Abstract: A carrier module of a tire pressure monitoring device includes a plastic carrier and a metallic tube. The plastic carrier has a trough and a tube extended from a bottom portion of the trough. The trough has an airflow channel penetratingly formed on the bottom portion thereof, and the trough is in air communication with the tube by the airflow channel The metallic tube is seamlessly formed on an inner surface of the tube of the plastic carrier. The metallic tube has an inner screw thread formed on an inner surface thereof for detachably screwing to a nozzle of a tire. Thus, by seamlessly forming the metallic tube on the inner surface of the tube of the plastic carrier, the tire pressure monitoring device of the instant disclosure has a better airproof effect and a longer service life.

Abstract: A seatpost has a post body, an adjusting mount, a connecting unit, and a connecting bracket. The post body has a supporting base disposed at an upper end of the post body. The supporting base has a bore formed through a rear end of the supporting base. The adjusting mount is connected to the supporting base and has a passing hole disposed at a rear end of the adjusting mount. The connecting unit is connected to the adjusting mount and has a connecting portion having a threaded hole. A bolt passes through the bore, the passing hole, and is screwed with the threaded hole. The connecting bracket has a front end connected to the connecting portion, a rear end opposite the front end, and an assembling board disposed at the rear end of the connecting bracket for assembling a taillight or a bicycle license plate.

Abstract: A carrier module of a tire pressure monitoring device includes a plastic carrier and a metallic tube. The plastic carrier has a trough and a tube extended from a bottom portion of the trough. The trough has an airflow channel penetratingly formed on the bottom portion thereof, and the trough is in air communication with the tube by the airflow channel The metallic tube is seamlessly formed on an inner surface of the tube of the plastic carrier. The metallic tube has an inner screw thread formed on an inner surface thereof for detachably screwing to a nozzle of a tire. Thus, by seamlessly forming the metallic tube on the inner surface of the tube of the plastic carrier, the tire pressure monitoring device of the instant disclosure has a better airproof effect and a longer service life.

Abstract: A component such as a display may have a substrate and thin-film circuitry on the substrate. The thin-film circuitry may be used to form an array of pixels for a display or other circuit structures. Metal traces may be formed among dielectric layers in the thin-film circuitry. Metal traces may be provided with insulating protective sidewall structures. The protective sidewall structures may be formed by treating exposed edge surfaces of the metal traces. A metal trace may have multiple layers such as a core metal layer sandwiched between barrier metal layers. The core metal layer may be formed from a metal that is subject to corrosion. The protective sidewall structures may help prevent corrosion in the core metal layer. Surface treatments such as oxidation, nitridation, and other processes may be used in forming the protective sidewall structures.

Abstract: One or more techniques or systems for cleaning wafers during semiconductor fabrication or an associated brush are provided herein. In some embodiments, the brush includes a brush body and one or more inner hole supports within the brush body. For example, a first inner hole support and a second inner hole support define a first inner hole associated with a first size. For another example, a third inner hole support and a fourth inner hole support define a second inner hole associated with a second size different than the first size. In some embodiments, a cleaning solution is applied to a wafer based on a first flow rate at a first brush position and based on a second flow rate at a second brush position. In this manner, a flow field associated with wafer cleaning is provided, thus enhancing cleaning efficiency, for example.

Abstract: A semiconductor device and a method for manufacturing the same are provided in the present invention. The semiconductor device includes a substrate, agate structure on the substrate and two spacers on both sidewalls of the gate structure. Each spacer comprises an inner first spacer portion made of SiCN and an outer second spacer portion made of SiOCN.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a gate structure formed over the substrate; a source region and a drain region formed in the substrate on either side of the gate structure, the source region and the drain region both having a first type of conductivity; and a field plate formed over the substrate between the gate structure and the drain region; wherein the field plate is coupled to the source region or a bulk electrode of the substrate. An associated method for fabricating the semiconductor structure is also disclosed.

Abstract: The present invention relates to a control method of an RF switch module. The RF switch module comprises a control device and a switch device. The control device is electrically connected to the switch device, and the control device is able to provide a control voltage to the switch device, and turn on or turn off the switch device. Further, the control device determines frequency or voltage value of the control voltage provided to the switch device according to the power or frequency of an RF signal transmitted by the switch device.

Abstract: A container is in an integral form, and has a body, two handles, a handle combination structure, a folding combination structure, and two lids. The handles are connected with the body, and connecting portions between the handles and body are bendable. The handle combination structure is formed on the handles to selectively combine the handles. The folding combination structure is formed on the handles and the connecting plates to selectively combine the handles and the body. The lids are connected with the body, are respectively located in spaces which are respectively formed in the body and the handles, and connecting portions between the body and the lids are bendable.

Abstract: Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and methods of forming the same are provided. A power MOSFET may comprise a first drift region formed at a side of a gate electrode, and a second drift region beneath the gate electrode, adjacent to the first drift region, with a depth less than a depth of the first drift region so that the first drift region and the second drift region together form a stepwise shape. A sum of a depth of the second drift region, a depth of the gate dielectric, and a depth of the gate electrode may be of substantially a same value as a depth of the first drift region. The first drift region and the second drift region may be formed at the same time, using the gate electrode as a part of the implanting mask.

Abstract: A container is in an integral form, and has a body, two handles, a handle combination structure, a folding combination structure, and two lids. The handles are connected with the body, and connecting portions between the handles and body are bendable. The handle combination structure is formed on the handles to selectively combine the handles. The folding combination structure is formed on the handles and the connecting plates to selectively combine the handles and the body. The lids are connected with the body, are respectively located in spaces which are respectively formed in the body and the handles, and connecting portions between the body and the lids are bendable.

Abstract: A semiconductor device and a method for manufacturing the same are provided in the present invention. The semiconductor device includes a substrate, agate structure on the substrate and two spacers on both sidewalls of the gate structure. Each spacer comprises an inner first spacer portion made of SiCN and an outer second spacer portion made of SiOCN.

Abstract: Provided is a composite powder used for the visible light catalytic and anti-bacterial purposes. The composite powder includes a plurality of N-type semiconductor particles and a plurality of P-type semiconductor nano-particles. The P-type semiconductor nano-particles cover surfaces of the N-type semiconductor particles respectively. A weight ratio of the N-type semiconductor particles and the P-type semiconductor nano-particles is in a range of 1:0.1 to 1:0.5. A PN junction is provided between each of the N-type semiconductor particles and the corresponding P-type semiconductor nano-particles.

Abstract: The invention discloses a method for transmitting digital contents between devices. First digital contents are modulated into an audio signal in a first device, wherein the first digital contents include contact information and at least one index of at least one second digital content. The audio signal is outputted by at least one audio generator of the first device and then received by at least one audio receiver of a second device. The audio signal is demodulated in the second device to make the second device obtain the first digital contents. The second device obtains the at least one second digital content according to the at least one index of the at least one second digital contents through a wired or wireless communication.

Abstract: The present invention provides methods and systems of using wavelet transform in a dual-track architecture to process ECG signals of patients and reference ECG signals of previously studied subjects to assess the cardiovascular health of the patients. The dual-track architecture refers to running wavelet transform on the ECG signals of the patients and the reference ECG signals to extract and analyze 2-dimensional time-domain signal characteristics of the ECG signals, and to build and analyze a 3-dimensional model of frequency-domain and time-domain information of the ECG signals. The characteristics of the ECG signals of the patients and the reference ECG signals may be compared and used to identify a cardiovascular disease of the patient or to recommend follow-up tests. The results of the comparison may also be used to configure the ECG device used to acquire the ECG signals of the patient and/or to optimize the parameters of the 2-D/3-D analysis.

Abstract: Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and methods of forming the same are provided. A power MOSFET may comprise a first drift region formed at a side of a gate electrode, and a second drift region beneath the gate electrode, adjacent to the first drift region, with a depth less than a depth of the first drift region so that the first drift region and the second drift region together form a stepwise shape. A sum of a depth of the second drift region, a depth of the gate dielectric, and a depth of the gate electrode may be of substantially a same value as a depth of the first drift region. The first drift region and the second drift region may be formed at the same time, using the gate electrode as a part of the implanting mask.

Abstract: A method for forming a semiconductor device is provided. First, a dielectric layer is provided on a substrate, wherein a first recess and a second recess are formed in the dielectric layer. After a mask layer is filled into the first recess and the second recess, the mask layer in the second recess is removed away, thereby forming a patterned mask layer. Subsequently, a nitride treatment is performed to remove unwanted residue of the mask layer in the second recess.

Abstract: A metal-oxide-semiconductor field effect transistor (MOSFET) includes a substrate and a gate structure over a top surface of the substrate. The MOSFET further includes a source in the substrate on a first side of the gate structure and a drain in the substrate on a second side of the gate structure opposite the first side. A surface portion of the substrate extending from the source to the drain has an asymmetric dopant concentration profile.