Abstract: A semiconductor device includes a first to a third nitride-based semiconductor layers, a source electrode, a drain electrode and a gate electrode. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than a bandgap of the first nitride-based semiconductor layer, so as to form a heterojunction therebetween with a two-dimensional hole gas (2DHG) region. A third nitride-based semiconductor layer is embedded in the second nitride-based semiconductor layer and spaced apart from the first nitride-based semiconductor layer. The third nitride-based semiconductor layer is doped to have a first conductivity type different than that of the second nitride-based semiconductor layer.

Abstract: Provided herein are nanobodies, polypeptides comprising the same, and uses thereof. The nanobody's variable region includes 3 complementarity determining regions (CDRs) and framework regions (FRs), wherein the CDRs are as follows: CDR1: Ser-Gly-Xaa11-Xaa12-Phe-Xaa13-Xaa14-Asn-Xaa15 (Formula I); CDR2: Xaa21-Thr-Xaa22-Xaa23-Gly-Xaa24-Thr (Formula II); CDR3: His-Xaa31-Asp-Glu-Xaa32-Arg-Xaa33-Ser-Xaa34-Trp-Thr-Thr-Ser-Asn-Xaa35 (Formula III). The nanobodies and their polypeptides exhibit high affinity and activity, specifically recognizing and binding AAV. Affinity agents prepared therefrom have strong AAV adsorption capacity, suitable for AAV affinity chromatography to facilitate its industrial application. They are also applicable to AAV detection, enabling simultaneous detection of empty capsids and viral particles.

Abstract: A bidirectional optical module includes a TOSA, a ROSA and an optical filter. The TOSA includes a light emitting unit and a thin film LiNbOx modulator, and the thin film LiNbOx modulator is optically coupled with the light emitting unit. The ROSA is connected with the TOSA. The optical filter is provided for a fiber port which the TOSA shares with the ROSA.

Abstract: A semiconductor device includes a first and a second nitride-based semiconductor layers, a source electrode, a drain electrode, a passivation layer, a stress modulation layer and a gate electrode. The stress modulation layer is disposed over the second nitride-based semiconductor layer and extends along at least one sidewall of the passivation layer to make contact with the second nitride-based semiconductor layer, so as to form an interface. The gate electrode is disposed over the stress modulation layer and between the source and drain electrodes. The gate electrode is located directly above the interface of the stress modulation layer and the second nitride-based semiconductor layer.

Abstract: A semiconductor device includes a first and a second nitride-based semiconductor layers, a source electrode, a drain electrode, a gate electrode, and a first and a second stress modulation layers. The first nitride-based semiconductor layer has a first thickness. The second nitride-based semiconductor layer has a bandgap less than a bandgap of the first nitride-based semiconductor layer to form a heterojunction therebetween. The second nitride-based semiconductor layer has a second thickness, and a ratio of the first thickness to the second thickness is in a range from 0.5 to 5. The first and the second stress modulation layers provide a first and a second drift regions of the second nitride-based semiconductor layer with stress, respectively, resulting in induction of a first and a second 2DHG regions within the first and the second drift regions, respectively.

Abstract: A bi-directional and multi-channel optical module incudes a casing, an optical transmitter assembly, an optical receiver assembly and an optical fiber adaptor. The optical transmitter assembly is disposed in an accommodation space of the casing. The optical transmitter assembly includes a plurality of light emission units and a wavelength division multiplexer disposed corresponding to the plurality of light emission units. The optical receiver assembly is disposed in the accommodation space. The optical receiver assembly includes a plurality of light receiving units and a wavelength demultiplexer disposed corresponding to the plurality of light receiving units. The optical fiber adaptor is disposed on the casing.

Abstract: A nitride-based semiconductor device includes a substrate, a buffer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a S/D electrode, a second S/D electrode, and a gate electrode. The buffer is disposed over the substrate and includes at least one layer of a nitride-based semiconductor compound doped with an acceptor at a top-most portion of the buffer. The first and second nitride-based semiconductor layers are disposed over the buffer. The first S/D electrode is disposed over the second nitride-based semiconductor layer, in which the first S/D electrode extends downward to a position lower than the first nitride-based semiconductor layer, so as to form at least one first interface with the top-most portion of the buffer, making contact with the at least one layer of the nitride-based semiconductor compound. The second S/D electrode and the gate electrode are disposed over the second nitride-based semiconductor layer.

Abstract: A bi-directional and multi-channel optical module incudes an encapsulation casing, a TOSA, a plurality of ROSAs and a plurality of optical folding elements. The TOSA is accommodated in the encapsulation casing. The TOSA includes a light emitting element and a thin film LiNbOx modulator, and a light receiving end of the thin film LiNbOx modulator is optically coupled with the light emitting element. The ROSAs are accommodated in the encapsulation casing. The ROSAs are configured to receive external optical signals propagating into the encapsulation casing. The optical folding elements are optically coupled with a plurality of light propagation ends of the thin film LiNbOx modulator, respectively, for changing a traveling direction of light emitted by the TOSA. Each of the optical folding elements is configured to enable one of the ROSAs share a fiber access terminal with the TOSA.

Abstract: A nitride-based semiconductor device including a first and a second nitride-based semiconductor layers, a source electrode and a drain electrode, and a gate structure. The gate structure includes at least one conductive layer and two or more doped nitride-based semiconductor layers. The at least one conductive layer includes metal, and is in contact with the second nitride-based semiconductor layer to form a metal-semiconductor junction therebetween. The two or more doped nitride-based semiconductor layers are in contact with the second nitride-based semiconductor layer and abut against the conductive layer, so as to form contact interfaces abutting against the metal-semiconductor junction with the second nitride-based semiconductor.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first nitride-based transistor, and a second nitride-based transistor. The first nitride-based transistor applies the 2DEG region as a channel thereof and comprising a first drain electrode that makes contact with the second nitride-based semiconductor layer to form a first Schottky diode with the second nitride-based semiconductor layer. The second nitride-based transistor applies the 2DEG region as a channel thereof and includes a second drain electrode that makes contact with the second nitride-based semiconductor layer to form a second Schottky diode with the second nitride-based semiconductor layer, such that the first Schottky diode and the second Schottky diode are connected to the same node.

Abstract: The present invention discloses glass ceramics, and a production method and a dedicated device therefor. Glass ceramics are prepared by using tantalum-niobium tailings, blind mining of natural stone material is greatly reduced, and comprehensive utilization efficiency of tantalum-niobium tailings is improved. The glass ceramics obtained by the production method and the dedicated device has few bubbles and high strength, and the yield and the quality of the finished product are both improved. Moreover, the idle tantalum-niobium tailings are utilized in the production, so that resources are saved.

Abstract: The present application discloses a vertical UMOSFET device with a high channel mobility and a preparation method thereof. The vertical UMOSFET device with a high channel mobility includes an epitaxial structure, and a source, a drain and a gate which match the epitaxial structure, where the epitaxial structure includes a first semiconductor, and a second semiconductor and a third semiconductor which are sequentially disposed on the first semiconductor, a groove structure matching the gate is also disposed in the epitaxial structure, and the groove structure continuously extends into the first semiconductor from a first surface of the epitaxial structure; a fourth semiconductor is also disposed at least between an inner wall of the groove structure and the second semiconductor, and the fourth semiconductor is a high resistivity semiconductor.

Abstract: A nitride-based semiconductor device includes a first and a second nitride-based semiconductor layers, a source electrode, a gate electrode, and a drain structure. The drain structure includes a first doped nitride-based semiconductor layer, an ohmic contact electrode, and a conductive layer. The first doped nitride-based semiconductor layer is in contact with the second nitride-based semiconductor layer to form a first contact interface. The ohmic contact electrode is in contact with the second nitride-based semiconductor layer to form a second contact interface. The conductive layer includes metal and in contact with the second nitride-based semiconductor layer to form a metal-semiconductor junction therebetween. The conductive layer is connected to the first doped nitride-based semiconductor layer and the ohmic contact electrode, and the ohmic contact interface is farther away from the gate electrode than the first contact interface and the second contact interface.

Abstract: An optical module includes a housing, a plurality of active optical components and a path changer component. The housing has an airtight chamber. The active optical components are provided in the airtight chamber. The path changer component is provided in the airtight chamber, and the path changer component is configured to change an optical path of at least one of the active optical components.

Abstract: A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a shield layer, a second nitride-based semiconductor layer, a pair of S/D electrodes, and a gate electrode. The first nitride-based semiconductor layer is disposed over the buffer and forms a first interface with the buffer. The shield layer includes a first isolation compound and is interposed between the buffer and the first nitride-based semiconductor layer. The first isolation compound has a bandgap greater than a bandgap of the buffer and greater than a bandgap of the first nitride-based semiconductor layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a gate electrode and a single field plate. The source electrode, the drain electrode, and the gate electrode are disposed on the second nitride-based semiconductor layer. The gate electrode is between the source and drain electrodes. The single field plate is disposed over the gate electrode and extends toward the drain electrode. The field plate has a first end part, a second end part and the central part. The first and the second end parts are located at substantially the same height. Portions of the central part are in a position lower than that of the first and second end parts, and the first end part extends laterally in a length greater than a width of the gate electrode.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first nitride-based transistor, and a second nitride-based transistor. The first nitride-based transistor applies the 2DEG region as a channel thereof and comprising a first drain electrode that makes contact with the second nitride-based semiconductor layer to form a first Schottky diode with the second nitride-based semiconductor layer. The second nitride-based transistor applies the 2DEG region as a channel thereof and includes a second drain electrode that makes contact with the second nitride-based semiconductor layer to form a second Schottky diode with the second nitride-based semiconductor layer, such that the first Schottky diode and the second Schottky diode are connected to the same node.

Abstract: A semiconductor device includes a first and a second nitride-based semiconductor layers, a source electrode, a drain electrode, a passivation layer, a stress modulation layer and a gate electrode. The stress modulation layer is disposed over the second nitride-based semiconductor layer and extends along at least one sidewall of the passivation layer to make contact with the second nitride-based semiconductor layer, so as to form an interface. The gate electrode is disposed over the stress modulation layer and between the source and drain electrodes. The gate electrode is located directly above the interface of the stress modulation layer and the second nitride-based semiconductor layer.

Abstract: A bi-directional and multi-channel optical module incudes an encapsulation casing, a TOSA, a plurality of ROSAs and a plurality of optical folding elements. The TOSA is accommodated in the encapsulation casing. The TOSA includes a light emitting element and a thin film LiNbOx modulator, and a light receiving end of the thin film LiNbOx modulator is optically coupled with the light emitting element. The ROSAs are accommodated in the encapsulation casing. The ROSAs are configured to receive external optical signals propagating into the encapsulation casing. The optical folding elements are optically coupled with a plurality of light propagation ends of the thin film LiNbOx modulator, respectively, for changing a traveling direction of light emitted by the TOSA. Each of the optical folding elements is configured to enable one of the ROSAs share a fiber access terminal with the TOSA.

Abstract: A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a shield layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. A first nitride-based semiconductor layer is disposed over the buffer. A shield layer is disposed between the buffer and the first nitride-based semiconductor layer and includes a first isolation compound that has a bandgap greater than a bandgap of the first nitride-based semiconductor layer, in which the first isolation compound is made of at least one two-dimensional material which includes at least one metal element. A second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer. The pair of S/D electrodes and the gate electrode are disposed over the second nitride-based semiconductor layer.