Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: The present invention provides a hydrophilic/oleophobic sponge, a preparation method and use thereof, and belongs to the technical field of functional material preparation. In the present invention, a modified solution is obtained by mixing a nanoparticle suspension with a modifier solution; the nanoparticle suspension includes silica-encapsulated Fe3O4 nanoparticle suspension and/or nano-silica ethanol suspension; the modifier solution includes chitosan-acetic acid aqueous solution and polyvinyl alcohol (PVA) aqueous solution. The sponge is soaked in the modified solution, mixed and crosslinked with glutaraldehyde aqueous solution to obtain the hydrophilic/oleophobic sponge, conferring good oil-water separation ability on the sponge. The sponge effectively separates a heavy water layer from oil-water mixtures with such light oils as lubricating oil, engine oil, pump oil, crude oil, gasoline, and sunflower seed oil in a simple gravity-driven manner.

Abstract: A semiconductor device includes a first semiconductor die and a second semiconductor die connected to the first semiconductor die. Each of the first semiconductor die and the second semiconductor die includes a substrate, a conductive bump formed on the substrate and a conductive contact formed on the conductive bump. The conductive contact has an outer lateral sidewall, there is an inner acute angle included between the outer lateral sidewall and the substrate is smaller than 85°, and the conductive contact of the first semiconductor die is connected opposite to the conductive contact of the second semiconductor die.

Abstract: The present disclosure discloses a method for dual-motor control on an electric vehicle based on adaptive dynamic programming. First, total torque required is calculated based on obtained data information of the electric vehicle under various driving conditions, and offline training is conducted on an execution network and an evaluation network. Then total torque is dynamically distributed for two motors of the electric vehicle under various driving conditions to obtain an efficiency MAP database. Afterwards, iteration and online learning are conducted on the execution network and the evaluation network based on data information of the electric vehicle under different driving conditions that is obtained in real time, so as to find an optimal control law for the electric vehicle under a real-time driving condition. In this way, the dual-motor control on the electric vehicle is optimized.

Abstract: The present disclosure provides a scan driving circuit, which includes a pull-up output charging circuit, a pull-down discharge circuit, a pre-charge circuit, an anti-noise start-up circuit and an anti-noise pull-down discharge circuit. The pull-up output charging circuit is electrically connected to an output terminal, and the pull-down discharge circuit is electrically connected to the output terminal. The pre-charge circuit is electrically connected to the pull-up output charging circuit and the pull-down discharge circuit through a driving node. The anti-noise start-up circuit is electrically connected to the pre-charge circuit. The anti-noise pull-down discharge circuit is electrically connected to the anti-noise start-up circuit, and the anti-noise pull-down discharge circuit is electrically connected to the driving node.

Abstract: A syringe stabilizing apparatus has a base and a syringe support. The syringe support is vertically disposed above the base, elevating a fluid-filled portion of an infusion set vertically above the base and orienting a delivery end of the fluid-filled portion upwardly relative to a horizontal plane to take advantage of a gravitational effect on a fluid during delivery of the fluid from the fluid-filled portion to a patient. The syringe support comprises a first retainer and a selectively actuated tube clamp. The first retainer has an opening in which a rigid portion of the infusion set is received and retained therein without further user intervention. The selectively actuated tube clamp is operatively aligned with the first retainer. A flexible tube extending from the rigid portion of the infusion set extends through the selectively actuated tube clamp.

Abstract: An electrostatic discharge (ESD) circuit includes a first ESD detection circuit, a first discharging circuit and a first ESD assist circuit. The first ESD detection circuit is coupled between a first node having a first voltage and a second node having a second voltage. The first discharging circuit includes a first transistor. The first transistor has a first gate, a first drain, a first source and a first body terminal. The first gate is coupled to the first ESD detection circuit by a third node. The first drain is coupled to the first node. The first source and the first body terminal are coupled together at the second node. The first ESD assist circuit is coupled between the second and third node, and configured to clamp a third voltage of the third node at the second voltage during an ESD event at the first or second node.

Abstract: A powered industrial truck includes a lateral movement assembly including four sliding members and four pivotal members both on a wheeled carriage, four links having a first end pivotably secured to the sliding member and a second end pivotably secured to either end of the pivotal member, a motor shaft having two ends pivotably secured to the pivotal members respectively, a first electric motor on one frame member, and four mounts attached to the sliding members respectively; two lift assemblies including a second electric motor, a shaft having two ends rotatably secured to the sliding members respectively, two gear trains at the ends of the shaft respectively, a first gear connected to the second electric motor, a second gear on the shaft, and a first roller chain on the first and second gears; two electric attachments on the platform and being laterally moveable, each attachment. The mount has rollers.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a semiconductor wafer and a test structure. The semiconductor wafer has a substrate having a scribe line area, a first die area and a second die area. The first die area and the second die area are separated by the scribe line area extending along a first direction. The test structure is disposed in the scribe line area. The test structure includes a test device and a first test pad. The test device has a physical characteristic similar to a semiconductor device fabricated in the first die area or the second die area. The first test pad is electrically connected to the test device. A first distance between the first test pad and the first die area gradually increases from a center region to a peripheral region of the first test pad in the first direction.

Abstract: An impeller is provided, including a metal housing, a shaft, and a plastic member. The metal housing has a shaft mounting hole. The inner surface of the shaft mounting hole includes three or more contact points, and the contact points are closer to the shaft than other portions of the inner surface of the shaft mounting hole. The shaft passes through the shaft mounting hole and is affixed by the contact points. The metal housing divides the shaft into an upper section, a middle section, and a lower section. The plastic member passes through the shaft mounting hole and is in contact with the middle section.

Abstract: A laser device for photocoagulation surgery is disclosed, wherein the laser device includes a multi-wavelength laser source having a first direction and a second direction different from the first direction. The laser device includes a positioning light source, a first laser light source, a first lens, a second laser light source, a second lens, a third laser light source, a third lens, a fourth laser light source and a fourth lens. The positioning light source configured to project a positioning visible light along the first direction, wherein the positioning visible light has a specific wavelength being about 635 nm. The first laser light source configured to project a first laser light having a first wavelength along the second direction. The first lens disposed in a main optical path of the positioning visible light, and configured to receive the first laser light and reflect the first laser light along the first direction.

Abstract: An illumination system provides an illumination beam and includes a red light source, a green light source, a blue light source, a first supplementary light source, a first X-shaped light-splitting assembly, a first light-splitting element, and a light-uniforming element. The red light source provides a red beam. The green light source provides a green beam. The blue light source provides a blue beam. The first supplementary light source provides a first supplementary beam. The first X-shaped light-splitting assembly guides the first supplementary beam and the blue beam to the first light-splitting element. The first light-splitting element guides the red beam, the green beam, the blue beam, and the first supplementary beam to the light-uniforming element. The first supplementary beam is a red supplementary beam or a blue supplementary beam, and the illumination system includes at least five light-emitting elements. A projection apparatus including the above illumination system is also provided.

Abstract: A liquid-cooled cooling structure includes a cooling main body having a condensation chamber and an evaporation chamber arranged vertically therein; a separation member arranged between and separating the condensation chamber and the evaporation chamber, and having a first through hole and a second through hole communicating with the condensation chamber and the evaporation chamber, a dimension of the first through hole being greater than that of the second through hole; a longitudinal partition board received in the condensation chamber and arranged between the first through hole and the second through hole and separating the condensation chamber into a first channel and a second channel; cooling fins extended from an outer perimeter of the cooling main body.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: Provided are methods for clinical treatment of complement-mediated TMA (CM-TMA) (e.g., CM-TMA associated with a trigger, such as autoimmune condition, an infection, a transplant, one or more drugs, or malignant hypertension), using an anti-C5 antibody, or antigen binding fragment thereof, such as ravulizumab (ULTOMIRIS®).

Abstract: A resin film is provided. When the resin film is characterized by Fourier transform infrared spectroscopy (FTIR), the Fourier transform infrared spectrum of the resin film has a signal intensity A from 2205 cm?1 to 2322 cm?1 and a signal intensity B from 1472 cm?1 to 1523 cm?1, and 0.70?A/B?1.95.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: In order to reduce the occurrence of current alarms in a semiconductor etching or deposition process, a controller determines an offset in relative positions of a cover ring and a shield over a wafer within a vacuum chamber. The controller provides a position alarm and/or adjusts the position of the cover ring or shield when the offset is greater than a predetermined value or outside a range of acceptable values.

Abstract: A transistor includes a gate structure over a substrate, wherein the substrate includes a channel region. The transistor further includes a source/drain (S/D) in the substrate adjacent to the gate structure. The transistor further includes a lightly doped drain (LDD) region adjacent to the S/D, wherein a dopant concentration in the first LDD is less than a dopant concentration in the S/D. The transistor further includes a doping extension region adjacent the LDD region, wherein the doping extension region extends farther under the gate structure than the LDD region, and a maximum depth of the doping extension region is 10-times to 30-times greater than a maximum depth of the LDD.