Abstract: An over-current protection device comprises two electrode foils, at least one conductive layer and a positive temperature coefficient (PTC) layer, wherein at least one of the electrode foils comprises a micro-rough surface, and the micro-rough surface of the electrode foil is overlaid by the conductive layer. The PTC layer is stacked between the two electrode foils, and at least one of the surfaces of the PTC layer is physically in contact with the at least one conductive layer. Accordingly, the conductive layer located between the PTC layer and the electrode foil can effectively decrease the contact resistance therebetween and avoid arcing.

Abstract: In various embodiments, methods and compositions are provided comprising titanium dioxide and silica spacers having improved light stability for use in paper, plastic and paints.

Abstract: A method for manufacturing a heterojunction bipolar transistor is provided. An intrinsic collector structure is formed on a substrate. An extrinsic base structure partially overlaps the intrinsic collector structure. An intrinsic base structure is formed adjacent the intrinsic collector structure and under the extrinsic base structure. An emitter structure is formed adjacent the intrinsic base structure. An extrinsic collector structure is formed adjacent the intrinsic collector structure. A plurality of contacts is formed through an interlevel dielectric layer to the extrinsic collector structure, the extrinsic base structure, and the emitter structure.

Abstract: A heterojunction bipolar transistor (HBT), and manufacturing method therefor, comprising a semiconductor substrate having a collector region, a number of insulating layers over the semiconductor substrate, at least one of the number of insulating layers having a base cavity over the collector region, a base structure of a compound semiconductive material in the base cavity, a window in the insulating layer over the base cavity, an emitter structure in the window, an interlevel dielectric layer, and connections through the interlevel dielectric layer to the base structure, the emitter structure, and the collector region. The base structure and the emitter structure preferably are formed in the same processing chamber.

Abstract: A method for manufacturing a lateral heterojunction bipolar transistor (HBT) is provided comprising a semiconductor substrate having a first insulating layer over the semiconductor substrate. A base trench is formed in a first silicon layer over the first insulating layer to form a collector layer over an exposed portion of the semiconductor substrate and an emitter layer over the first insulating layer. A semiconductive layer is formed on the sidewalls of the base trench to form a collector structure in contact with the collector layer and an emitter structure in contact with the emitter layer. A base structure is formed in the base trench. A plurality of connections is formed through an interlevel dielectric layer to the collector layer, the emitter layer, and the base structure. The base structure preferably is a compound semiconductive material of silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.

Abstract: A BiCMOS semiconductor, and manufacturing method therefore, is provided. A semiconductor substrate having a collector region is provided. A pseudo-gate is formed over the collector region. An emitter window is formed in the pseudo-gate to form an extrinsic base structure. An undercut region beneath a portion of the pseudo-gate is formed to provide an intrinsic base structure in the undercut region. An emitter structure is formed in the emitter window over the intrinsic base structure. An interlevel dielectric layer is formed over the semiconductor substrate, and connections are formed through the interlevel dielectric layer to the collector region, the extrinsic base structure, and the emitter structure. The intrinsic base structure comprises a compound semiconductive material such as silicon and silicon-germanium, or silicon-germanium-carbon, or combinations thereof.

Abstract: A heterojunction bipolar transistor (HBT), and manufacturing method therfor, comprising a semiconductor substrate having a collector region is provided. A base contact layer is formed over the collector region, and a base trench is formed in the base contact layer and the collector region. An intrinsic base structure having a sidewall portion and a bottom portion is formed in the base trench. An insulating spacer is formed over the sidewall portion of the intrinsic base structure, and an emitter structure is formed over the insulating spacer and the bottom portion of the intrinsic base structure. An interlevel dielectric layer is formed over the base contact layer and the emitter structure. Connections are formed through the interlevel dielectric layer to the collector region, the base contact layer, and the emitter structure. The intrinsic base structure is silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.

Abstract: A heterojunction bipolar transistor (HBT), and manufacturing method therefor, comprising a semiconductor substrate having a collector region, an intrinsic base region of a compound semiconductive material over the collector region, an extrinsic base region, an emitter structure, an interlevel dielectric layer over the collector region, extrinsic base region and emitter structure, and connections through the interlevel dielectric layer to the base region, the emitter structure, and the collector region. The emitter structure is formed by forming a reverse emitter window over the intrinsic base region, which subsequently is etched to form an emitter window having a multi-layer reverse insulating spacer therein.

Abstract: A method of manufacturing a 3-D spiral stacked inductor is provided having a substrate with a plurality of turns in a plurality of levels wherein the number of levels increases from an inner turn to the outer turn of the inductor. First and second connecting portions are respectively connected to an inner turn and an outermost turn, and a dielectric material contains the first and second connecting portions and the plurality of turns over the substrate.

Abstract: The present invention provides methods and compositions comprising inorganic solids for use as pigments in paints, papers and plastics.

Abstract: The present invention provides methods and compositions comprising inorganic solids for use as pigments in paints, papers and plastics.

Abstract: A rectangular metal slice is cut into antenna sheet material. The antenna sheet material is further folded up to form the antenna. The antenna sheet material includes a radiating plate, a feeding plate, and a ground plate. The length of the radiating plate is approximate quarter wavelength corresponding to the operating frequency. The main feature of the antenna, according to the invention, is that the feeding plate and the ground plate extend in the same direction, thereby reducing the scale of the antenna.

Abstract: A titanium dioxide compound was isolated from a rare type of naturally occurring ore. Processes for efficiently isolating and obtaining these TiO2 compounds, as well as methods for using them have been developed. These TiO2 compounds may be used directly in applications such as paper, plastics and paints without being subjected to the chloride or sulfate processes. Also they made be used as a feedstock for the chloride or sulfate processes. In order to obtain these TiO2 compounds, one may grind or pulverize the naturally occurring ore, disperse it in a solution or suspension, and process it by selective flocculation or aqueous biphasic extraction.

Abstract: The present invention provides a shift multi-exposure method for defining a regular pattern by a photomask. The method comprises the following steps. First, a photoresist layer comprising a first region and a second region is formed on a substrate. Then, a first pattern is defined on the first region by the photomask. Next, the photomask is moved a predetermined distance, and a second pattern is defined on the second region by the photomask. Finally, development is performed to display the first pattern and the second pattern on the photoresist layer.

Abstract: The present invention provides slurries and methods of making slurries having improved stability comprising below about 78 weight-percent rutile titanium dioxide based on the total weight of the slurry, an amorphous alumina compound surface treated titanium dioxide, a polyacrylic acid dispersing agent having a molecular weight in the range of from about 2,000 to about 5,000 that is neutralized with a neutralizing agent having a monovalent group, and water; wherein the slurry has a pH of from about 6 to about 8. The slurries of the present invention resist gel formation.

Abstract: The present invention discloses high solids slurries of anatase titanium dioxide pigment comprising greater than about 75% by weight of anatase TiO2 pigment dispersed in water. A process for producing the slurries of the present invention is disclosed which comprises the steps of a) dry milling the anatase titanium dioxide pigment, preferably by pressure rolling, and b) mixing the dry milled pigment with water in the presence of an acrylic acid dispersant.

Abstract: In a method for exhausting processing gases out of a dry etching apparatus, processing gases are introduced into a processing chamber of the dry etching apparatus and converted into a gas plasma to etch a semiconductor workpiece. After plasma etching the semiconductor workpiece, the gas plasma is centrally gathered under the semiconductor workpiece by a sucking force formed surrounding the bottom periphery of the semiconductor workpiece, and then, is exhausted. The semiconductor workpiece to be processed is placed on a chuck under which an exhausting means is arranged.

Abstract: The present invention provides methods and compositions comprising inorganic solids for use as pigments in paints, papers and plastics.

Abstract: A new method of avoiding resist notching in the formation of a polysilicon gate electrode in the fabrication of an integrated circuit device is described. Bare active areas are provided surrounded by field oxide isolation on a semiconductor substrate wherein the surface of the substrate has an uneven topography due to the uneven interface between the active areas and the isolation. A polysilicon layer is deposited over the active areas and the field oxide isolation of the substrate. The surface of the polysilicon layer is roughened using a plasma etching process wherein pits are formed on the surface which act as light traps. The roughened polysilicon layer is covered with a layer of photoresist. Portions of the photoresist layer are exposed to actinic light wherein reflection lights from the actinic light are trapped in the pits. The reflection lights do not reflect onto the unexposed portion of the photoresist layer.