Abstract: The present invention provides a shift multi-exposure method for defining a regular pattern by a photomask. The method comprises the following steps. First, a photoresist layer comprising a first region and a second region is formed on a substrate. Then, a first pattern is defined on the first region by the photomask. Next, the photomask is moved a predetermined distance, and a second pattern is defined on the second region by the photomask. Finally, development is performed to display the first pattern and the second pattern on the photoresist layer.

Abstract: A titanium dioxide compound was isolated from a rare type of naturally occurring ore. Processes for efficiently isolating and obtaining these TiO2 compounds, as well as methods for using them have been developed. These TiO2 compounds may be used directly in applications such as paper, plastics and paints without being subjected to the chloride or sulfate processes. Also they made be used as a feedstock for the chloride or sulfate processes. In order to obtain these TiO2 compounds, one may grind or pulverize the naturally occurring ore, disperse it in a solution or suspension, and process it by selective flocculation or aqueous biphasic extraction.

Abstract: A process of fabricating a sub-micron MOSFET device, featuring a high dielectric constant gate insulator layer, and a metal gate structure, has been developed. Processes performed at temperatures detrimental to the high dielectric, gate insulator layer, such as formation of spacers on the sides of subsequent gate structures, as well as formation of source/drain regions, are introduced prior to the formation of the high dielectric, gate insulator layer. This is accomplished via use of a dummy gate structure, comprised of silicon nitride, used as a mask to define the source/drain regions, and used as the structure in which sidewall spacers are formed on. After selective removal of the dummy gate structure, creating an opening in an interlevel dielectric layer exposing the MOSFET channel region, deposition of the high dielectric, gate insulator layer, on the surface of the MOSFET channel region, is performed.

Abstract: The present invention discloses high solids slurries of anatase titanium dioxide pigment comprising greater than about 75% by weight of anatase TiO2 pigment dispersed in water. A process for producing the slurries of the present invention is disclosed which comprises the steps of a) dry milling the anatase titanium dioxide pigment, preferably by pressure rolling, and b) mixing the dry milled pigment with water in the presence of an acrylic acid dispersant.

Abstract: The present invention discloses high solids slurries of anatase titanium dioxide pigment comprising greater than about 75% by weight of anatase TiO2 pigment dispersed in water. A process for producing the slurries of the present invention is disclosed which comprises the steps of a) dry milling the anatase titanium dioxide pigment, preferably by pressure rolling, and b) mixing the dry milled pigment with water in the presence of an acrylic acid dispersant.

Abstract: Disclosed herein is a post-etch treatment for plasma etched metal-comprising features in semiconductor devices. The post-etch treatment significantly reduces or eliminates surface corrosion of the etched metal-comprising feature. It is particularly important to prevent the formation of moisture on the surface of the feature surface prior to an affirmative treatment to remove corrosion-causing contaminants from the feature surface. Avoidance of moisture formation is assisted by use of a high vacuum; use of an inert, moisture-free purge gas; and by maintaining the substrate at a sufficiently high temperature to volatilize moisture.

Abstract: A stepper alignment method and apparatus for transferring circuit layout on a mask to a wafer precisely includes a stepper located in a susceptor and includes a vacuum chuck and a movable vacuum chuck. The wafer has two notches on its perimeter. The vacuum chuck has two sets of photo sensors mating against the notches and a central circular opening for housing the movable vacuum chuck therein. The movable vacuum chuck holds the wafer by means of vacuum force and is able to rotate and move linearly to align the notches of the wafer against the photo sensors accurately at high speed.

Abstract: A method of recording the bi-directional communication between a customer premises equipment (CPE) and a server of a stored program controlled system (SPCS) in an analog display services interface (ADSI) for facilitating the troubleshooting therein is disclosed. The present invention includes accessing the telephone set by a user, therefore initiating the communication between the telephone set and the server. After receiving an alerting signal from the server, the alerting signal and the corresponding received time of the alerting signal are recorded into a trace area in the telephone set. A first acknowledgment signal is sent to the server after the alerting signal is recognized, and the first acknowledgment signal is then recorded in the trace area. At least one message is sent from the server, and then the message, a start received time and an end received time of the message are recorded into the trace area and a message buffer.

Abstract: A rear shielding shell for a USB plug connector is disclosed. The rear shielding shell defines a main body for connection with a front shielding shell, and a guiding sleeve for an extension of a cable therethrough to connect with contacts mounted to a dielectric body. The guiding sleeve is formed with a retaining portion by applying a cutting operation to the guiding sleeve. The retaining portion can be extended onto the cable extending through the sleeve and fixedly engage therewith and reduce a gap between the cable and the sleeve.

Abstract: A Chemical-Mechanical Polish (CMP) planarizing method and a Chemical-Mechanical Polish (CMP) slurry composition for Chemical-Mechanical Polish (CMP) planarizing of copper metal and copper metal alloy layers within integrated circuits. There is first provided a semiconductor substrate having formed upon its surface a patterned substrate layer. Formed within and upon the patterned substrate layer is a blanket copper metal layer or a blanket copper metal alloy layer. The blanket copper metal layer or blanket copper metal alloy layer is then planarized through a Chemical-Mechanical Polish (CMP) planarizing method employing a Chemical-Mechanical Polish (CMP) slurry composition. The Chemical-Mechanical Polish (CMP) slurry composition comprises a non-aqueous coordinating solvent and a halogen radical producing specie.

Abstract: An apparatus for use in the photoresist development process of an integrated circuit fabrication is provided to improve the uniformity of development. The apparatus includes: a holder which includes a vertical spindle and a chuck fixed on the top of the vertical spindle, for horizontally holding a semiconductor wafer; a liquid feeder disposed above the holder, for supplying a developer onto the semiconductor wafer; a cup-type housing disposed under the holder, wherein the bottom of the cup-type housing includes a valve for draining the developer and a hole for allowing the vertical spindle to penetrate through; and a hoisting instrument fixed on the bottom of the cup-type housing, so that when the cup-type housing is lifted, the edge of the semiconductor wafer tightly contacts the sidewall of the cup-type housing, thereby forming a dish-like container for containing the developer.

Abstract: A method for forming upon a reflective layer, such as a reflective conducting layer, within an integrated circuit an Anti-Reflective Coating (ARC) which simultaneously possesses adhesion promotion characteristics for an organic layer to be formed upon the reflective layer. There is first formed upon a semiconductor wafer a reflective integrated circuit layer which may be a hydrophilic reflective integrated circuit layer or a hydrophobic integrated circuit layer. The semiconductor wafer is then immersed into and withdrawn from a Langmuir trough having formed therein a Langmuir-Blodgett (LB) monolayer film of a dye surfactant molecule ordered upon a surface of water. Upon withdrawing the wafer from the Langmuir trough, there is formed upon the reflective integrated circuit layer an ordered LB film of the dye surfactant molecule. The chromophore groups within the dye surfactant molecule and ordered LB film provide ARC characteristics to the reflective layer.

Abstract: The present invention discloses high solids slurries of sulfate process, anatase titanium dioxide pigment. The improvements of these slurries over those of the prior art are improved slurry stability, tolerance to calcium and magnesium ions, foaming tendencies and reduced tendency to flocculate. The slurries of the present invention are comprised of at least 65% by weight of anatase TiO.sub.

Abstract: This computer system, as well as its method of operation, corrects the position data used to define the location of alignment marks on a workpiece. The first step is to scan marks along a first direction to determine the direction of wafer scaling along the first direction. Second, scan marks along a second direction to determine the direction of wafer scaling along the second direction. Next, scan a first set of alignment marks on a workpiece oriented in a first direction and a second set of alignment marks on the workpiece oriented in a second direction in an initial sequence to collect initial direction data on the location. Then, scan the first set of alignment marks and the second set of alignment marks in a reverse sequence to collect reverse direction data on the location. Finally, average the initial direction data and the reverse direction data. This enables correction of false alignment data attributable to falsely measured locations of alignment marks.

Abstract: An antireflection mask and method of using the antireflection mask to form contact holes for an integrated circuit wafer are described. The antireflection mask has a patterned opaque layer formed on a transparent mask substrate. The patterned opaque layer has first openings for exposing photoresist in regions where the photoresist is thicker and second openings for exposing photoresist in regions where the photoresist is thinner. A patterned layer of antireflection material having a light transmittance of less than 100% is formed over the second openings but not over the first openings. Light is passed through the mask to expose a layer of photoresist. The light exposing the thinner photoresist regions is attenuated by the antireflection material thereby compensating for variations in photoresist thickness. In addition the antireflection material reduces reflections from the patterned opaque layer of the mask.

Abstract: A method for dry etching metal films, specifically aluminum, is described. This process uses photoresist as a mask with a gas mixture of BCl3, Cl2 and N2 used for the RIE. The addition of specific amounts of N2 to the etching chemistry results in non-tapered or non-undercut aluminum shapes. These desired shapes are attributed to the creation of polymer on the sidewall of the aluminum during the etching procedure, thus protecting against the isotropic components of RIE process, which cause the tapering. This RIE process can also be conducted at high enough temperatures, needed to avoid deleterious microloading effects.

Abstract: This invention provides an improved process latitude mask for forming contact or via hole openings in a photoresist masking layer in the fabrication of semiconductor integrated circuits. The invention also provides a method of forming contact or via hole openings in a photoresist masking layer using an improved process latitude mask. The improved process latitude mask, called a dot mask, uses an opaque blocking area formed in the center of the primary opening in a projection mask for forming contact or via hole openings in a photoresist layer. The opaque blocking area is equal to or less than the area of the primary opening divided by nine. The opaque blocking area is small enough so that it will not form an image in the photoresist layer. The opaque blocking area modifies the light intensity profile at the photoresist layer in a manner which improves process latitude.

Abstract: A novel human hepatokine, referred to hereinafter as HPX, has been isolated and purified from human fetal hepatocytes. HPX has a molecular weight of approximately 15 kD, a pI of about 6, and has been found to promote hepatocyte growth activity in vitro and in vivo.