Abstract: A method of forming a dielectric layer includes the following steps. First of all, a high-k dielectric layer is formed on a substrate. Next, a nitridation process is performed on the high-k dielectric layer immediately after the high-k dielectric layer is formed. Then, a post-nitridation process is performed on the high-k dielectric layer after the nitridation process is performed.

Abstract: The present invention provides an integrated circuit including a substrate, a first transistor, a second transistor and a third transistor. The first transistor has a first metal gate including a first bottom barrier layer, a first work function metal layer and a first metal layer. The second transistor has a second metal gate including a second bottom barrier layer, a second work function metal layer and a second metal layer. The third transistor has a third metal gate including a third bottom barrier layer, a third work function metal layer and a third metal layer. The first transistor, the second transistor and the third transistor has the same conductive type. A nitrogen concentration of the first bottom barrier layer>a nitrogen concentration of the second bottom barrier layer>a nitrogen concentration of the third bottom barrier layer.

Abstract: Portable physiological measuring devices and methods are disclosed. Embodiments may provide measurement of blood pressure without traditional blood pressure cuffs. Further, disclosed embodiments may gather pulse oximetry (SpO2), heart rate and body temperature measurements simultaneously. A user's blood pressure index and other vital physiological results may be displayed on a portable physiological measuring apparatus or a portable terminal. Embodiments may provide a portable physiological measuring method and apparatus that displays results on a displayed screen.

Abstract: A touch panel including a substrate, a touch-sensing element, transmission lines, a ground electrode, a first electrode layer, an insulation layer and a second electrode layer is provided. The transmission lines are electrically connected to the touch-sensing element. The ground electrode surrounds the touch-sensing element and the transmission lines. The first electrode layer is located around and electrically connected to the ground electrode. The insulation layer is at least disposed on the first electrode layer. The second electrode layer is disposed on the insulation layer to form at least one capacitance storage unit, so that the electro static discharge can be conducted to the ground electrode through the capacitance storage unit.

Abstract: A display module includes a display device, a pivot member, and a reflection-mirror device. The display device includes a light splitting device and a monitor for displaying first and second images arranged alternately. The light splitting device is disposed at a position corresponding to a light exit side of the monitor for splitting the first and second images along first and second splitting directions respectively. The pivot member is disposed at a side of the display device. The reflection-mirror device is connected to the pivot member to be foldably pivoted to the side of the display device. The reflection-mirror device is for reflecting the first images split along the first splitting direction in a reflection direction when being unfolded relative to the display device. The reflection direction is relatively biased toward the monitor so as to form an included angle cooperatively with a normal of the monitor.

Abstract: A medium temperature solid oxide fuel cell glass packaging material is provided. The glass packaging material may include a glass main body made of SiO2, Al2O3, Y2O3 and ZnO, and at least one glass modifier added into the glass main body. Glass transition temperature ranges from 700 to 900 degrees Celsius. The glass modifier may be rare earth elements or transitory elements. The added glass modifier may adjust the glass transition temperature and the thermal expansion coefficient, and improve the bonding characteristics of the glass packaging material, so as to allow the manufactured glass packaging material to be applicable in SOFC application temperature range from 500 to 800 degrees Celsius.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; forming a lightly doped drain in the substrate; and performing a first implantation process for implanting fluorine ions at a tiled angle into the substrate and part of the gate structure.

Abstract: An output circuit is provided and includes first and second output stage elements, a detection circuit, a control circuit, and a first pre-driver. The first and second output stage elements are coupled in series between a power terminal and the ground terminal. The detection circuit detect whether an electrostatic discharge event occurs at an output terminal between the two output stage elements to generate a control signal. The control circuit controls a state of the first output stage element when the control circuit is enabled according to the control signal. The first pre-driver controls the state of the first output stage element when the first per-driver is enabled according to the control signal. When the detection circuit detects that the electrostatic discharge event occurs at the output terminal, the control circuit is enabled to turn on the first output stage element, and the first pre-driver is disabled.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer in the first region, forming a first metal layer over capping layer in the first region and over the high-k dielectric in the second region, thereafter, forming a first gate stack in the first region and a second gate stack in the second region, protecting the first metal layer in the first gate stack while performing a treatment process on the first metal layer in the second gate stack, and forming a second metal layer over the first metal layer in the first gate stack and over the treated first metal layer in the second gate stack.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate, a gate structure on the substrate, and a spacer adjacent to the gate structure, in which the bottom of the spacer includes a tapered profile and the tapered profile comprises a convex curve.

Abstract: A ceramic cathode material of a solid oxide fuel cell and a manufacturing method thereof are disclosed. The method includes mixing a lanthanum-containing compound, a cobalt-containing compound, a nickel-containing compound, and a copper-containing compound, for preparing the ceramic cathode material of the solid oxide fuel cell of intermediate/low type. The ceramic cathode material of the solid oxide fuel cell is LaCozNiyCuxO3??. X ranges from 0.01 to 0.3, y ranges from 0 to 0.89, and z ranges from 0.1 to 0.99. The ceramic cathode material manufactured by mixing the lanthanum-containing compound, the cobalt-containing compound, the nickel-containing compound, and the copper-containing compound when operating within the temperature range from 500 to 800 degrees Celsius is of high electrical conductivity and reduced thermal expansion coefficient.

Abstract: A ceramic cathode material used in a fuel cell and a preparation method for the same are disclosed. The disclosed ceramic cathode material is prepared by a mix of lanthanum-based compound, cobalt-based compound, and copper-based compound in order to be used in intermediate/low temperature fuel cell. The ceramic cathode material may be represented in LaCoyCuxO3?? with x ranging from 0.01 to 0.3 and y ranging from 0.7 to 0.99. The prepared ceramic cathode material may be associated with high electrical conductivity and reduced coefficient of thermal expansion when operating in the temperature range between 500 and 800 degrees Celsius.

Abstract: A module structure of touch display panel is provided. The module structure comprises a backlight module, a liquid crystal panel, a touch layer, a first circuit board, a second circuit board, and a protection layer. The liquid crystal panel is disposed above the backlight module; the touch layer is disposed on the liquid crystal panel. The first circuit board is disposed on the liquid crystal panel, and is further disposed with a first side of the liquid crystal panel and a first side of the touch layer. The second circuit board is disposed on the liquid crystal panel, and is further disposed with a second side of the liquid crystal panel and a second side of the touch layer. Additionally, the protection layer is disposed above the touch layer, the first circuit board, and the second circuit board.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the substrate; forming a stack structure on the interfacial layer; patterning the stack structure to form a gate structure on the interfacial layer; forming a liner on the interfacial layer and the gate structure; and removing part of the liner and part of the interfacial layer for forming a spacer.

Abstract: A signal transceiving circuit comprising an IC including a signal transmitting part. The signal transmitting part comprises: a first I/O pad; a second I/O pad; a first output stage circuit, coupled to the first I/O pad; a second output stage circuit, coupled to the second I/O pad; and a first surge protecting device, comprising a first terminal coupled to the first output stage circuit and the first I/O pad, and comprising a second terminal coupled to the second output stage circuit and the second I/O pad.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; depositing a liner on the gate structure and the substrate; and performing an etching process by injecting a gas comprising CH3F, O2, and He for forming a spacer adjacent to the gate structure.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; forming a lightly doped drain in the substrate; and performing a first implantation process for implanting fluorine ions at a tiled angle into the substrate and part of the gate structure.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; injecting a first precursor and forming an interfacial layer on the substrate; and injecting a second precursor and performing a thermal treatment for forming an interface layer on the interfacial layer.

Abstract: A radar system comprises a transmitting device comprising a reference frequency source, for generating a reference frequency signal; a direct-digital synthesizer, coupled to the reference frequency source, for generating a synthesized frequency signal according to the reference frequency signal; a phase lock loop, coupled to the direct-digital synthesizer, for converting the synthesized frequency signal to an output signal; a transmitting antenna, coupled to the phase lock loop, for emitting the output signal to the air; and a loop switch module, coupled to the phase lock loop, for switching the phase lock loop between an open loop mode and a closed loop mode; and at least one receiving device, for receiving at least one wireless signal, and processing the at least one wireless signal according to the output signal generated by the phase lock loop.

Abstract: A video decoding apparatus capable of controlling presentation of sub-pictures includes a first decoder, a second decoder, a first scaler, a second scaler and a combiner. The first decoder and the second decoder respectively decode a digital audio/video signal to generate a decoded video and a decoded sub-picture. In accordance with an output picture size, the decoded video size, the decoded sub-picture size and a sub-picture aspect ratio, the first scaler and the second scaler generate a first scaling factor and a second scaling factor. The combiner combines the decoded video and the decoded sub-picture according to the first scaling factor and the second scaling factor and outputs the combination thereof. A video decoding method and a digital audio/video playback system capable of controlling presentation of sub-pictures are also disclosed.