Abstract: A semiconductor device includes a first semiconductor wafer, a second semiconductor wafer, and a first conductive via. The first semiconductor wafer includes a first substrate and at least one first conductive layer disposed on a top surface of the first substrate. The second semiconductor wafer is disposed on the first semiconductor wafer. The second semiconductor wafer includes a second substrate and a first conductive pad disposed on a top surface of the second substrate. The first conductive via extends from the first conductive pad to the first conductive layer.

Abstract: The present invention provides a storage node contact structure of a memory device comprising a substrate having a dielectric layer comprising a recess, a first tungsten metal layer, and an adhesive layer on the first tungsten metal layer and a second tungsten metal layer on the adhesive layer, wherein the second tungsten metal layer is formed by a physical vapor deposition (PVD).

Abstract: A memory controller includes: an interface configured to operably communicate with a host device; a temperature detecting circuit configured to operably detect an ambient temperature, wherein when the ambient temperature is beyond a predetermined temperature range, the temperature detecting circuit generates a control signal; and a processing circuit coupled to the interface and the temperature detecting circuit, for selecting one of a plurality of data program schemes to program data into a first storage block of a flash memory according to the control signal.

Abstract: A three-dimensional printing method for a three-dimensional printing system including a tank, a platform, an injection module, a warning module, a curing module, and a control module is provided. The control module is electrically connected to the curing module, the injection module, and the warning module. The method includes: analyzing a required amount of the liquid forming material corresponding to a three-dimensional object; obtaining a safe amount of the liquid forming material in the tank; and comparing the required amount and the safe amount, wherein the control module provides a response signal to the injection or warning module when the safe amount is less than the required amount. The injection module receives the response signal to inject the liquid forming material to the tank. The warning module receives the response signal to remind a user to provide the liquid forming material to the tank.

Abstract: A semiconductor structure and a method of forming the same are provided. In the semiconductor structure, contact spacers are formed at least on sidewalls of contact trenches in the substrate, so that the distance between the gate and the silicide layers disposed only on the bottom surfaces, rather than on the sidewalls and the bottom surfaces, of the contact trenches can be increased, and thus the current leakage induced by gate can be decreased.

Abstract: An electronic device includes: a storage device containing a target block having multiple word lines and multiple bit lines; a transmission interface configured to operably receive data to be written into the storage device; and a controller circuit including: an access circuit; and a flash memory control circuit configured to operably control the access circuit to write a first data into one or more pages connected with a first word line in the target block using a first program scheme, and to operably control the access circuit to write a second data into one or more pages connected with a second word line in the target block using a second program scheme, so that the first data and the second data are stored in the target block at the same time.

Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

Abstract: A three-dimensional printing device including a body, a tank, an origin target, a sensor, and a control module is provided. The tank is rotatably assembled on the body, and the tank is filled with a liquid forming material. The origin target is disposed on the tank and rotates along with the tank. The sensor is disposed on the body and located above the liquid forming material to sense a liquid level of the liquid forming material. The control module electrically connects the tank and the sensor and drives the tank to rotate. The sensor is located above a rotation path of the origin target, and the control module senses the origin target through the sensor and positions a rotation origin of the tank.

Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap an

Abstract: The present invention provides a storage node contact structure of a memory device comprising a substrate having a dielectric layer comprising a recess, a first tungsten metal layer, and an adhesive layer on the first tungsten metal layer and a second tungsten metal layer on the adhesive layer, wherein the second tungsten metal layer is formed by a physical vapor deposition (PVD).

Abstract: A method of manufacturing a semiconductor device for preventing row hammering issue in DRAM cell, including the steps of providing a substrate, forming a trench in the substrate, forming a gate dielectric conformally on the trench, forming an n-type work function metal layer conformally on the substrate and the gate dielectric, forming a titanium nitride layer conformally on the n-type work function metal layer, and filling a buried word line in the trench.

Abstract: An electronic device includes a substrate, first signal lines, pixel structures, first pads, transmission pads, a first combination circuit board, and a transmission circuit board. The first pads are electrically connected to some of a plurality of first signal lines. The transmission pads are electrically connected to some of the first signal lines. The first combination circuit board is disposed between a first side and a second side of the substrate opposite to each other. The transmission circuit board is disposed between the first combination circuit board and the second side of the substrate. The first combination circuit board is electrically connected to at least some of the first pads, and a first pitch exists between the adjacent first pads. The transmission pads are electrically connected to the transmission circuit board, and a transmission-pad pitch exists between the adjacent transmission pads. The transmission-pad pitch is greater than the first pitch.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a logic region; forming a stack structure on the memory region and a gate structure on the logic region; forming a first cap layer on the stack structure and the gate structure; performing an oxidation process to form an oxide layer on the first cap layer; forming a second cap layer on the oxide layer; and removing part of the second cap layer, part of the oxide layer, and part of the first cap layer on the logic region to form a spacer adjacent to the gate structure.

Abstract: A management method for a storage system is disclosed. The storage system comprises a plurality of hard disks, the management method comprises dividing the plurality of hard disks into a hot storage group, a warm storage group and a cold storage group according to a first threshold and a second threshold; exchanging a first warm storage hard disk conforming to the first threshold in the warm storage group with a hot storage hard disk in the hot storage group in response to not conform to the first threshold; and exchanging a cold storage hard disk conforming to the second threshold in the cold storage group with a second warm storage hard disk in the warm storage group in response to conform to the second threshold.

Abstract: A method for generating a security feature of a flash memory includes determining a memory block from a plurality of memory blocks in the flash memory; erasing data of the determined memory block of the flash memory; providing a predetermined voltage to the determined memory block to obtain a plurality of corresponding threshold voltages of a plurality of cells in the determined memory block, wherein each of the corresponding threshold voltages corresponds to a characteristic of each cell in the determined memory block; and establishing a security feature based on the plurality of corresponding threshold voltages.

Abstract: A system and an operating method of a questionnaire sticker applying to various communication software programs are described. The system includes a server, a user platform, a user end and a sending end. The server includes a group database and a questionnaire sticker database. The group database and the questionnaire sticker database are respectively accessed by a registration interface and a sticker interface included in the user platform. The user end inputs the registration information through the registration interface, so as to create a user group or join a friend group. The sending end selects one of the questionnaire sticker models through the sticker interface to form a questionnaire sticker. The questionnaire sticker is sent to the group members through the corresponding communication software.

Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.

Abstract: A semiconductor structure for preventing row hammering issue in DRAM cell is provided in the present invention. The structure includes a trench with a gate dielectric, an n-type work function metal layer, a TiN layer conformally formed within, and a buried word line filled in the trench.

Abstract: The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.

Abstract: A flash memory controller is suitable for a NAND flash memory and a voltage supply circuit. The voltage supply circuit supplies a current to the flash memory. The flash memory controller includes a flash control circuit, a current sensing circuit, and a processor. The flash control circuit is configured to control an operation of the flash memory. The current sensing circuit is configured to measure the current consumed by the flash memory during its operation, and output a current value. The processor is configured to output a control signal based on the current value. Therefore, the flash memory controller can instantly obtain a current value consumed during the operation of flash memory, and determine, based on the current value, whether the flash memory runs normally. A storage apparatus having the flash memory controller can instantly determine whether the flash memory runs normally.