Abstract: A control system and a control method are provided. The control system provides a first setting signal in response to an abnormal read-write operation performed on at least one storage device. The control system generates a first state signal having a first logic value in response to the first setting signal and latches the first state signal, and disables the at least one storage device on which the abnormal read-write operation is performed in response to the first state signal having the first logic value. The control system includes a restart input module. The restart input module converts the first logic value of the latched first state signal into a second logic value, so that the control system restarts the at least one storage device disabled in response to the first state signal having the second logic value.

Abstract: A high electron mobility transistor (HEMT) includes a substrate, a channel layer, a barrier layer and a passivation layer. A contact structure is disposed on the passivation layer and extends through the passivation layer and the barrier layer to directly contact the channel layer. The contact structure includes a metal layer, and the metal layer includes a metal material doped with a first additive. A weight percentage of the first additive in the metal layer is between 0% and 2%.

Abstract: A composite solid base catalyst, a manufacturing method thereof and a manufacturing method of glycidol are provided. The composite solid base catalyst includes an aluminum carrier and a plurality of calcium particles. The plurality of calcium particles are supported by the aluminum carrier. Beta basic sites of the composite solid base catalyst are 0.58 mmol/g-3.89 mmol/g.

Abstract: A metal capacitor provided includes a first metal layer and a second metal layer disposed above a substrate. The first metal layer includes a first electrode sheet and a second electrode sheet, and the second metal layer includes a third electrode sheet and a fourth electrode sheet. The first electrode sheet and the second electrode sheet collectively form a first coplanar capacitor. The third electrode sheet and the fourth electrode sheet collectively form a second coplanar capacitor. At least a portion of the fourth electrode sheet is arranged above the first electrode sheet, and the first electrode sheet and the fourth electrode sheet collectively form a first vertical capacitor. At least a portion of the third electrode sheet is arranged above the second electrode sheet, and the second electrode sheet and the third electrode sheet collectively form a second vertical capacitor.

Abstract: A light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and the second light-emitting structure unit includes a second sidewall; an isolation layer formed on the first sidewall and the second sidewall, including a first edge on the first light-emitting structure unit and wherein the first edge has an acute angle in a cross-sectional view; and an electrical connection formed on the isolation layer, the first light-emitting structure unit and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall and the second sidewall are inclined; and wherein the electrical connection includes a first part on the first light-emitting structure unit, and the first part do

Abstract: This disclosure provides a communication device and a manufacturing method thereof. The manufacturing method of the communication device includes the following steps: providing a first dielectric layer, wherein the first dielectric layer includes a first region and a second region, and the first dielectric layer has a first surface and a second surface opposite to the first surface; providing a second dielectric layer; combining the first dielectric layer and the second dielectric layer with a sealing element, so that the sealing element is disposed between the first surface of the first dielectric layer and a third surface of the second dielectric layer; after combining the first dielectric layer and the second dielectric layer, thinning the second surface of the first dielectric layer; and disposing a first communication element on the first surface of the first dielectric layer in the first region.

Abstract: A manufacturing method of an electronic device including following steps is provided. A first substrate is provided. A thermal release adhesive layer is provided on the first substrate. A thinning process is performed on the first substrate to form a first thinned substrate. A cutting process is performed on the first thinned substrate to form a first sub-substrate. The thermal release adhesive layer is separated from the first thinned substrate or the first sub-substrate. In the manufacturing method of the electronic device provided in one or more embodiments of the disclosure, the manufacturing process of the electronic device may be simplified, and/or defects of the resultant electronic device may be reduced.

Abstract: A control method of a flyback power converter includes a voltage detection pin detecting conduction time of a power switch of a primary side of the flyback power converter, a feedback pin detecting conduction time of a synchronous switch of a secondary side of the flyback power converter, the feedback pin detecting a number of inductor capacitor resonant valleys when the flyback power converter operates in a discontinuous conduction mode, and a high voltage detection pin detecting an input voltage inputted in the flyback power converter; and a controller applied to the flyback power converter making the flyback power converter operate in a quasi-resonant mode when the number of the inductor capacitor resonant valleys is greater than a predetermined number, an operational frequency of the flyback power converter is less than a predetermined frequency, and the input voltage is less than a predetermined voltage.

Abstract: A high-voltage semiconductor device integrates a MOS transistor with a Schottky barrier diode. The MOS transistor has a semiconductor substrate of a first conduction type, a well of a second conduction, a body of the first conduction type, and a doped source of the second type. A control gate formed above the body controls electric connection between the doped source and the well. The Schottky barrier diode has a metal, functioning to be an anode of the Schottky barrier diode and contacting the well to form a Schottky barrier junction therebetween.

Abstract: A wrapping material includes a substrate and a buffer layer, wherein the substrate has a first lateral edge and a second lateral edge, and the buffer layer has a third lateral edge and a fourth lateral edge. The buffer layer is stacked on the substrate. The first lateral edge of the substrate is tightly merged with the third lateral edge of the buffer layer, and the second lateral edge of the substrate is tightly merged with the fourth lateral edge of the buffer layer. A method of making a wrapping material includes: providing a substrate; stacking a buffer layer on the substrate; using a thermal cutting tool to cut the stacked substrate and buffer layer so that the substrate and the buffer layer are tightly merged at where they are cut as being melted by heat.

Abstract: An electronic device is provided. The electronic device includes a working region and a non-working region adjacent to the working region. The electronic device includes a first substrate, a first photo spacer, a second photo spacer, and a plurality of third photo spacers. The first photo spacer is disposed on the first substrate in the working region and has a first thickness. The second photo spacer is disposed on the first substrate in the non-working region and has a second thickness. The plurality of third photo spacers are disposed on the first substrate. The first photo spacer is disposed between two of the plurality of third photo spacers. At least one of the plurality of third photo spacers has a third thickness. The first thickness is different from the second thickness, and the third thickness is less than the first thickness.

Abstract: A semiconductor structure and a method of forming the same are provided. In the semiconductor structure, contact spacers are formed at least on sidewalls of contact trenches in the substrate, so that the distance between the gate and the silicide layers disposed only on the bottom surfaces, rather than on the sidewalls and the bottom surfaces, of the contact trenches can be increased, and thus the current leakage induced by gate can be decreased.

Abstract: A control system and a control method are provided. The control system provides a first setting signal in response to an abnormal read-write operation performed on at least one storage device. The control system generates a first state signal having a first logic value in response to the first setting signal and latches the first state signal, and disables the at least one storage device on which the abnormal read-write operation is performed in response to the first state signal having the first logic value. The control system includes a restart input module. The restart input module converts the first logic value of the latched first state signal into a second logic value, so that the control system restarts the at least one storage device disabled in response to the first state signal having the second logic value.

Abstract: A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.

Abstract: A knob-less horizontal-shift fire door lock includes a base including a longitudinal bar, an unlocked-state positioning member arranged in the longitudinal bar and having a positioning section; a latch pivoted to the base and having a free end elastically biased outside the base to engage a keeper on a door jamb; a push board pivoted in the base; and a handle bar slidably mounted on the longitudinal bar. The handle bar is biased by an elastic element to protrude outwards and moving a guide pin to slide in a guide groove of the positioning section. The handle bar is depressible toward the longitudinal bar to move the push board to drive the latch to retract into the base to achieve an unlocked state. The handle bar is further shiftable horizontally to cause the guide pin to slide into a horizontal groove of the positioning section for being secured in position.

Abstract: A paper dispenser includes a base, paper dispensing portion and cover. The paper dispensing portion has two support members and a paper dispensing unit. The paper dispensing unit has an auxiliary roller, paper dispensing roller, swing unit and paper dispensing cutter disposed at the swing unit. The paper dispensing cutter swings between the inside and outside of a receiving groove of the paper dispensing roller. The support members each have a roll resilient positioning unit, arcuate pivotal connection unit and cam guide groove surrounding the pivotal connection unit and being closed. Two sides of the paper dispensing roller are pivotally disposed at one end of the pivotal connection unit. The guide unit is movably disposed at the cam guide groove. The cover is pivotally disposed at the base and has a paper discharge hole. The paper dispensing portion is disposed between the cover and base.

Abstract: A micro needle holder capable of cutting sutures, configured for holding needles and cutting sutures during microsurgeries, includes a needle holding unit and a suture cutting unit. The needle holding unit includes a pair of first plier bodies and a first shaft, where each of the first plier bodies has a needle holding end, a first shaft connecting part, and a first plier arm. The suture cutting unit includes a pair of second plier bodies and a second shaft, where each of the second plier bodies includes a suture cutting end, a second shaft connecting part, and a second plier arm. Moreover, the first plier arms are respectively connected with the second plier arms and are configured to elastically open and close corporately.

Abstract: An electronic modulating device is provided. The electronic modulating device includes a first substrate. The first substrate includes a first portion and a second portion. The electronic modulating device also includes a second substrate disposed opposite to the first substrate. The electronic modulating device further includes at least one working device disposed between the first substrate and the second substrate, wherein the working device overlaps the first portion and does not overlap the second portion. In addition, the electronic modulating device includes a first adjustment unit disposed between the first portion of the first substrate and the second substrate. The first adjustment unit has a first elastic coefficient. The electronic modulating device also includes second adjustment unit disposed between the second portion of the first substrate and the second substrate. The second adjustment unit has a second elastic coefficient that is greater than the first elastic coefficient.

Abstract: A method for processing image data and a system thereof are provided. The method is operated in the system including an encoding system and a decoding system. In the decoding system, multiple image data packages are received from the encoding system. The image data packages include multiple encoded data that are formed by encoding the pixels of an image and the pixels are beforehand rearranged according to an arrangement order. The arrangement order is exemplarily made based on the quantity of encoding circuits of the encoding system. In the decoding system, the encoded data received from the encoding system are sequentially stored in a memory according to the arrangement order. The decoding circuits start to decode the encoded data from an initial code synchronously for enhancing decoding performance. The method can be applied to decoding of high resolution images. The image is reproduced after the decoding process.

Abstract: The present disclosure provides a non-fullerene acceptor polymer, which includes a structure represented by formula (I). Formula (I) is defined as in the specification. The non-fullerene acceptor polymer has an electron donating unit and an electron attracting end group. The non-fullerene acceptor polymer uses phenyl or its derivatives as the linker to form the polymer.