Patents by Inventor Fu Lin

Fu Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160375425
    Abstract: A method is provided for fabricating a carrier catalyst. The carrier catalyst uses an annular carrier of ?-alumina (?—Al2O3). The annular carrier of ?—Al2O3 has stable activity. By analyzing characteristics and methane conversion rates of catalysts with different compositions, a solution for solving carbon deposition is found. Cerium oxide (CeO2) is used as an accelerator and platinum (Pt) nano-particles are used as catalyzer. The above components are impregnated and coated on the annular carrier of ?—Al2O3. Thus, an annular-carrier catalyst of Pt/CBO2/?—Al2O3 is formed. Therein, the present invention uses carbon nanotubes before calcining the annular carrier catalyst. Consequently, its microstructure is modified to obtain a surface area of 130 square meters per gram and an average pore size of 12.585 angstroms. Preferably, 0.5 percents of platinum nano-particles are to be added into the carrier catalyst to achieve a 79% methane conversion rate even after 25 hours of reformation reaction.
    Type: Application
    Filed: March 25, 2016
    Publication date: December 29, 2016
    Inventors: Yi-Si Chou, Men-Han Huang, Ning-Yih Hsu, Ruey-Yi Lee, Kin-Fu Lin
  • Publication number: 20160374455
    Abstract: A cosmetic container with antibacterial protection includes a bottle, a cap, a plate, a chamber, a deoxy sterilization material, and a switch mechanism. The cosmetics in the bottle can be sealed with the cap. The plate is mounted in the cap. The chamber is formed between the cap and the plate. The deoxy sterilization material is in the chamber. The switch mechanism is mounted in the cap adjacent to the plate for opening or closing the chamber, the switch mechanism opening the chamber and its contents to the contents of the cosmetic container when the cap is used to close the bottle, but closing and sealing the chamber in the cap when the cap is unscrewed so that the bacteria-killing contents are not volatilized into the air.
    Type: Application
    Filed: May 26, 2016
    Publication date: December 29, 2016
    Inventors: JUNG-YA HSIEH, YUNG-FU LIN, YUAN-HSIN CHANG
  • Patent number: 9520351
    Abstract: A packaging substrate and a package structure are provided. The packaging substrate includes a plurality of dielectric layers, two of which have a difference in thickness; and a plurality of circuit layers alternately stacked with the dielectric layers. Therefore, the package warpage encountered in the prior art is avoided.
    Type: Grant
    Filed: December 9, 2014
    Date of Patent: December 13, 2016
    Assignee: Siliconware Precision Industries Co., Ltd.
    Inventors: Chang-Fu Lin, Chin-Tsai Yao, Ming-Chin Chuang, Ko-Cheng Liu, Fu-Tang Huang
  • Patent number: 9506290
    Abstract: A tension device for a corded-loop drive system has a base with a sprocket on the base such that the cord loop travels over the sprocket. At least one resilient finger has a first end attached to the base and a free end. Each finger is sized and positioned to engage the cord loop when the tension device is not properly mounted to a wall or window frame and prevent movement of the cord loop around the sprocket. There is a hole in the finger through which a screw passes. When the base is placed on a mounting surface and the screw is driven into the mounting surface, the free end of the finger will have moved from the first position to a second position away from the cord so that the cord loop may move around the sprocket and the window covering can be fully raised and fully lowered.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: November 29, 2016
    Assignee: Whole Space Industries LTD
    Inventor: Tzong-Fu Lin
  • Publication number: 20160343416
    Abstract: A method of dynamic random access memory (DRAM) resource control for a DRAM manager of an electronic device is disclosed. The method comprises receiving at least one respective request message from at least one DARM user of the electronic device, each request message indicating required power information requested by the DRAM user sending the request message, and determining the DRAM to operate in one of a plurality of predetermined DRAM resource statuses respectively corresponding to a plurality of power levels according to the required power information respectively indicated by the at least one request message.
    Type: Application
    Filed: April 13, 2016
    Publication date: November 24, 2016
    Inventors: Chih-Chieh Chang, Kuan-Fu Lin, Jen-Chieh Yang, Haw-Kuen Su
  • Publication number: 20160344339
    Abstract: A solar cell module sequentially comprises a protecting plate, a solar cell structure, and a supporting structure. The supporting structure is filled with a phase change material that can absorb heat to improve the heat dissipation. Thereby, breakage of soldered electric wires of the solar cell structure can be prevented.
    Type: Application
    Filed: March 18, 2016
    Publication date: November 24, 2016
    Inventors: JUNG-YA HSIEH, SHIH-YUAN LIN, YUNG-FU LIN, YUAN-HSIN CHANG
  • Publication number: 20160343892
    Abstract: A solar cell module sequentially includes a protecting plate, a cell structure and a supporting structure. A manufacturing method of the solar cell module includes only one step of hot pressing the protecting plate, the cell structure, and the supporting structure together. This manufacturing method saves time and improves efficiency. Moreover, hot pressing does not cause serious deformation of the supporting structure even though the thermal expansion coefficients of materials are different.
    Type: Application
    Filed: February 2, 2016
    Publication date: November 24, 2016
    Inventors: JUNG-YA HSIEH, SHIH-YUAN LIN, YUNG-FU LIN, YUAN-HSIN CHANG
  • Patent number: 9490342
    Abstract: A method for fabricating a semiconductor device includes the following steps. Firstly, a dummy gate structure having a dummy gate electrode layer is provided. Then, the dummy gate electrode layer is removed to form an opening in the dummy gate structure, thereby exposing an underlying layer beneath the dummy gate electrode layer. Then, an ammonium hydroxide treatment process is performed to treat the dummy gate structure. Afterwards, a metal material is filled into the opening.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: November 8, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chien-Ming Lai, Yi-Wen Chen, Zhi-Cheng Lee, Tong-Jyun Huang, Che-Hua Hsu, Kun-Hsien Lin, Tzung-Ying Lee, Chi-Mao Hsu, Hsin-Fu Huang, Chin-Fu Lin
  • Publication number: 20160319450
    Abstract: An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.
    Type: Application
    Filed: July 11, 2016
    Publication date: November 3, 2016
    Inventors: Chun-Ling Lin, Yen-Liang Lu, Chi-Mao Hsu, Chin-Fu Lin, Chun-Hung Chen, Tsun-Min Cheng, Chi-Ray Tsai
  • Patent number: 9461150
    Abstract: A method for fabricating semiconductor device with fin-shaped structure is disclosed. The method includes the steps of: forming a fin-shaped structure on a substrate; forming a first dielectric layer on the substrate and the fin-shaped structure; depositing a second dielectric layer on the first dielectric layer; etching back a portion of the second dielectric layer; removing part of the first dielectric layer to expose a top surface and part of the sidewall of the fin-shaped structure; forming an epitaxial layer to cover the exposed top surface and part of the sidewall of the fin-shaped structure; and removing a portion of the second dielectric layer.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: October 4, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chin-Cheng Chien, Hsin-Kuo Hsu, Chih-Chien Liu, Chin-Fu Lin, Chun-Yuan Wu
  • Publication number: 20160265215
    Abstract: The present invention provides an acoustic board having displaced and passably abutted multiple through-holes, comprising an outer surface and an inner surface, in which the first through-holes formed from the outer surface toward the inner surface and the second through-holes formed from the inner surface toward the outer surface are displaced and passably abutted thereby conjunctively constituting acoustically absorptive micro-orifices. Herein at least some of the second through-holes have a cross-sectional area of greater than 1 mm2 and are displaced and passably abutted to at least some of the first through-holes, thereby collectively forming a plurality of acoustically absorptive micro-orifices having a cross-sectional area of smaller than 1 mm2, and, in comparison with the total area of the acoustic board, the opening rate for the sum of the cross-sectional areas of all such acoustically absorptive micro-orifices is less than 3%.
    Type: Application
    Filed: March 2, 2016
    Publication date: September 15, 2016
    Inventors: Jung-ya Hsieh, Yung-fu Lin, Yuan-Hsin Chang
  • Patent number: 9444231
    Abstract: A mounting mechanism for gripping DIN rail comprises: a main body and a latching body. The main body includes a first mounting portion having a stopper member and at least one first retaining unit, and a second mounting portion. The latching portion is movably disposed in the first mounting portion and includes at least one resilient portion and at least one second retaining unit. When one end of the latching body protrudes into the second mounting portion, the range of movement of the latching body spans from a position wherein the resilient portion abuts the stopper member to a position in wherein the second retaining unit abuts the first retaining unit. The main body is movably latched onto the DIN rail through the second mounting portion, and is fixed to a position on the DIN rail through one end of the latching body protruding into the second mounting portion.
    Type: Grant
    Filed: March 26, 2015
    Date of Patent: September 13, 2016
    Assignees: LITE-ON ELECTRONICS (GUANGZHOU) LIMITED, LITE-ON TECHNOLOGY CORPORATION
    Inventors: Chun-Lung Ho, Yi-Hsun Lee, Ming-Wei Ou, Yuan-Fu Lin
  • Patent number: 9437491
    Abstract: The present invention provides a method of forming a chip with TSV electrode. A substrate with a first surface and a second surface is provided. A thinning process is performed from a side of the second surface so the second surface becomes a third surface. Next, a penetration via which penetrates through the first surface and the third surface is formed in the substrate. A patterned material layer is formed on the substrate, wherein the patterned material layer has an opening exposes the penetration via. A conductive layer is formed on the third surface thereby simultaneously forming a TSV electrode in the penetration via and a surface conductive layer in the opening.
    Type: Grant
    Filed: July 3, 2015
    Date of Patent: September 6, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Tse Lin, Chu-Fu Lin, Chien-Li Kuo, Yung-Chang Lin
  • Publication number: 20160240321
    Abstract: The present invention provides an electrolyte material formulation including: (a) a monomer of formula (I) (b) a monomer of formula (II) and (c) a polymerizable compound, wherein A, X, B1, B2, R1 to R3, q and w are defined as those recited in the specification, and the monomer (b) is in an amount of about 1 part by weight to about 800 parts by weight and the polymerizable compound (c) is in an amount of about 1 part by weight to about 10000 parts by weight based on 100 parts by weight of the monomer (a). The present invention further provides an electrolytic material composition obtained by the polymerization of the aforementioned electrolytic material formulation. The electrolytic material composition can be applied to a solid electrolyte capacitor.
    Type: Application
    Filed: April 22, 2016
    Publication date: August 18, 2016
    Applicants: ETERNAL MATERIALS CO., LTD., GEMMY ELECTRONIC CO., LTD.
    Inventors: Shinn-Horng CHEN, Chieh-Fu LIN
  • Patent number: 9416459
    Abstract: An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: August 16, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ling Lin, Yen-Liang Lu, Chi-Mao Hsu, Chin-Fu Lin, Chun-Hung Chen, Tsun-Min Cheng, Chi-Ray Tsai
  • Patent number: 9412653
    Abstract: A through silicon via structure is located in a recess of a substrate. The through silicon via structure includes a barrier layer, a buffer layer and a conductive layer. The barrier layer covers a surface of the recess. The buffer layer covers the barrier layer. The conductive layer is located on the buffer layer and fills the recess, wherein the contact surface between the conductive layer and the buffer layer is smoother than the contact surface between the buffer layer and the barrier layer. Moreover, a through silicon via process forming said through silicon via structure is also provided.
    Type: Grant
    Filed: August 4, 2015
    Date of Patent: August 9, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Jia-Jia Chen, Chi-Mao Hsu, Tsun-Min Cheng, Chun-Ling Lin, Huei-Ru Tsai, Ching-Wei Hsu, Chin-Fu Lin, Hsin-Yu Chen
  • Patent number: 9401429
    Abstract: A semiconductor structure includes a fin-shaped structure and a gate. The fin-shaped structure is located in a substrate, wherein the fin-shaped structure has a through hole located right below a suspended part. The gate surrounds the suspended part. Moreover, the present invention also provides a semiconductor process including the following steps for forming said semiconductor structure. A substrate is provided. A fin-shaped structure is formed in the substrate, wherein the fin-shaped structure has a bottom part and a top part. A part of the bottom part is removed to form a suspended part in the corresponding top part, thereby forming the suspended part over a through hole. A gate is formed to surround the suspended part.
    Type: Grant
    Filed: June 13, 2013
    Date of Patent: July 26, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chin-Cheng Chien, Chun-Yuan Wu, Chin-Fu Lin, Chih-Chien Liu, Chia-Lin Hsu
  • Patent number: 9398971
    Abstract: A hinge for an orthopedic brace includes: a pivot shaft; a lower leg plate pivoted to the pivot shaft; an upper leg plate; a catch plate having a toothed peripheral edge; and two position adjusting units, each of which includes a rotatable limiting seat, a limiting pin, and a slider body. The rotatable limiting seat defines a housing chamber therein, and is formed with a wall slot. The slider body is slidably disposed in the housing chamber. The limiting pin extends from the slider body through the wall slot for engaging and disengaging the toothed peripheral edge. The catch plate is formed with a guiding groove. The rotatable limiting seat has a tongue protruding into the guiding groove.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: July 26, 2016
    Assignee: Plus Meditech Co., Ltd.
    Inventors: Yueh-Hua Chiang, Fu-Lin Chuang
  • Publication number: 20160211144
    Abstract: An epitaxial process applying light illumination includes the following steps. A substrate is provided. A dry etching process and a wet etching process are performed to form a recess in the substrate, wherein an infrared light illuminates while the wet etching process is performed. An epitaxial structure is formed in the recess.
    Type: Application
    Filed: February 25, 2015
    Publication date: July 21, 2016
    Inventors: Yu-Ying Lin, Ted Ming-Lang Guo, Chin-Cheng Chien, Chih-Chien Liu, Hsin-Kuo Hsu, Chin-Fu Lin, Chun-Yuan Wu
  • Patent number: D762759
    Type: Grant
    Filed: August 28, 2014
    Date of Patent: August 2, 2016
    Assignee: GoPro, Inc.
    Inventors: Chao-Hsien Wu, Pei-Jen Lin, Fu-Lin Yang, Hung-Yu Chen, Pei-Yi Ou-Yang, Cheng-Ming Wu, Feng-Chun Huang