Abstract: A capacitor includes a first graphene structure having a first plurality of graphene layers. The capacitor further includes a dielectric layer over the first graphene structure. The capacitor further includes a second graphene structure over the dielectric layer, wherein the second graphene structure has a second plurality of graphene layers.

Abstract: A digital code recovery circuit includes a data transmitter that outputs either input data or a preamble code as transmitter data. A radio frequency interconnect (RFI) transmitter modulates carrier signals based on the transmitter data and transmits the modulated carrier signals over a channel to an RFI receiver that demodulates the carrier signals to obtain recovered transmitter data. A calibration storage device stores preamble data and a calibration circuit receives the recovered transmitter data. If the recovered transmitter data originated from the preamble code, the calibration circuit determines a set of digital calibration adjustments from the recovered transmitter data and the preamble data. If the recovered transmitter data originated from the input data, the calibration circuit applies the set of digital calibration adjustments to the recovered transmitter data to obtain adjusted digital code and outputs the adjusted digital code.

Abstract: A semiconductor wafer includes a plurality of dies and at least one test probe. Each of the plurality of dies includes a radio frequency identification (RFID) tag circuit. The at least one test probe includes a plurality of probe pads. The plurality of probe pads is configured to transmit power signals and data to each of the plurality of dies, and to receive test results from each of the plurality of dies. The data are transmitted to each of the plurality of dies in a serial manner. The test results of each of the plurality of dies are also transmitted to the plurality of probe pads in a serial manner.

Abstract: A filter includes shunt circuits coupled between a reference node and each of an input port, an output port, a first node, and a second node. Resonant networks are coupled between the input port and the second node, and between the first node and the output port. Storage element circuits are coupled between the input port and the first node, and between the second node and the output port. The shunt circuits have an equivalent shunt circuit frequency response that partly defines a high passband frequency of the filter, the resonant networks have an equivalent resonant network frequency response that partly defines a low passband frequency of the filter, and the storage element circuits have an equivalent storage element circuit frequency response that defines a stopband frequency of the filter between the low passband frequency and the high passband frequency.

Abstract: A Dual-Side Illumination (DSI) image sensor chip includes a first image sensor chip configured to sense light from a first direction, and a second image sensor chip aligned to, and bonded to, the first image sensor chip. The second image sensor chip is configured to sense light from a second direction opposite the first direction.

Abstract: A varainductor including a signal line disposed over a substrate. The varainductor further includes a first ground plane over the substrate, the first ground plane disposed on a first side of the signal line, and a second ground plane over the substrate, the second ground plane disposed on a second side of the signal line opposite the first side of the signal line. The varainductor further includes a first floating plane over the substrate, the first floating plane disposed between the first ground plane and the signal line, and a second floating plane over the substrate, the second floating plane disposed between the second ground plane and the signal line. The varainductor further includes an array of switches, the array of switches is configured to selectively connect the first ground plane to the first floating plane, and to selectively connect the second ground plane to the second floating plane.

Abstract: An integrated circuit (IC) die for electromagnetic band gap (EBG) noise suppression is provided. A power mesh and a ground mesh are stacked within a back end of line (BEOL) region overlying a semiconductor substrate, and an inductor is arranged over the power and ground meshes. The inductor comprises a plurality of inductor segments stacked upon one another and connected end to end to define a length of the inductor. A capacitor underlies the power and ground meshes, and is connected in series with the inductor. Respective terminals of the capacitor and the inductor are respectively coupled to the power and ground meshes. A method for manufacturing the IC die is also provided.

Abstract: An integrated circuit includes transistor and resistor. The transistor includes a gate stack. The gate stack includes a first dielectric layer, a first conductive layer over the first dielectric layer, a second conductive layer over the first conductive layer, and a second dielectric layer over the second conductive layer. The transistor also includes source/drain (S/D) regions adjacent to the gate stack. The resistor adjacent to the transistor, and includes a third dielectric layer.

Abstract: A method for manufacturing an interconnect structure is provided. The method includes the following steps. An opening is through a substrate. A low-k dielectric block is formed in the opening. At least one first via is formed through the low-k dielectric block. A first conductor is formed in the first via.

Abstract: A semiconductor device includes a first transmission line and a second transmission line. The semiconductor device further includes a high-k dielectric material between the first transmission line and the second transmission line. The semiconductor device further includes a dielectric material directly contacting at least one of the first transmission line or the second transmission line, wherein the dielectric material has a different dielectric constant from the high-k dielectric material.

Abstract: A filter includes shunt circuits coupled between a reference node and each of an input port, an output port, a first node, and a second node. Resonant networks are coupled between the input port and the second node, and between the first node and the output port. Storage element circuits are coupled between the input port and the first node, and between the second node and the output port. The shunt circuits have an equivalent shunt circuit frequency response that partly defines a high passband frequency of the filter, the resonant networks have an equivalent resonant network frequency response that partly defines a low passband frequency of the filter, and the storage element circuits have an equivalent storage element circuit frequency response that defines a stopband frequency of the filter between the low passband frequency and the high passband frequency.

Abstract: A varainductor includes a spiral inductor, a ground ring, and a floating ring. The floating ring is disposed between the ground ring and the spiral inductor and surrounds a ring portion of the spiral inductor. A switching element, controlled by a switch control signal, selectively electrically connects the ground ring to the floating ring. The switching element includes one or more switches. The one or more switches are controlled by one or more signals of the switch control signal to adjust the inductance level of the varainductor.

Abstract: A method for manufacturing an interconnect structure and an interconnect structure are provided. The method includes: forming an opening in a substrate; forming a low-k dielectric block in the opening; forming at least one via in the low-k dielectric block; and forming a conductor in the via. The interconnect structure includes a substrate, a dielectric block, and a conductor. The substrate has an opening therein. The dielectric block is present in the opening of the substrate. The dielectric block has at least one via therein. The dielectric block has a dielectric constant smaller than that of the substrate. The conductor is present in the via of the dielectric block.

Abstract: A voltage supply unit includes a regulator unit, a current mirror, and a cascode unit. The regulator unit is configured to receive first and second voltage signals and generate a third voltage signal. The current mirror is configured to generate first and second current signals based on the third voltage signal. The cascode unit includes a first terminal configured to receive the first current signal, a second terminal configured to receive a first bias voltage signal, a third terminal configured to receive a second bias voltage signal, and a fourth terminal electrically connected to the regulator unit. An output voltage supply signal is controlled by the second current signal.

Abstract: A transmission line design includes a first transmission line configured to transfer at least one first signal. The transmission line design further includes a second transmission line configured to transfer at least one second signal, wherein the second transmission line is spaced from the first transmission line. The transmission line design further includes a high-k dielectric material between the first transmission line and the second transmission line. The transmission line design further includes a dielectric material surrounding the high-k dielectric material, the first transmission line and the second transmission line, wherein the dielectric material is different from the high-k dielectric material.

Abstract: Among other things, an inductor comprising a conductive trace and a method for forming the inductor are provided. The inductor comprises a magnetic structure, such as a ferrite core. A molding material, such as a dielectric, is formed around the magnetic structure. A conductive trace, comprising one or more conductive pillars interconnected by one or more upper interconnects and one or more lower interconnects, is formed around the magnetic structure to form the inductor. The conductive trace allows physical limitations associated with winding a wire to be avoided, and thus allows the inductor to be smaller than wire wound inductors. In one example, the inductor is formed within an integrated circuit package comprising an active device, such as an integrated circuit. In this way, the inductor can be connected to the integrated circuit within the integrated circuit package.

Abstract: A method for manufacturing an interconnect structure and an interconnect structure are provided. The method includes: forming an opening in a substrate; forming a low-k dielectric block in the opening; forming at least one via in the low-k dielectric block; and forming a conductor in the via. The interconnect structure includes a substrate, a dielectric block, and a conductor. The substrate has an opening therein. The dielectric block is present in the opening of the substrate. The dielectric block has at least one via therein. The dielectric block has a dielectric constant smaller than that of the substrate. The conductor is present in the via of the dielectric block.

Abstract: A delay line circuit includes a plurality of delay circuits and a variable delay line circuit. The plurality of delay circuits receives an input signal and to generate a first output signal. The first output signal corresponds to a delayed input signal or an inverted input signal. The variable delay line circuit receives the first output signal. The variable delay line circuit includes an input end, an output end, a first and a second path. The input end is configured to receive the first output signal. The output end is configured to output a second output signal. The first path includes a first plurality of inverters and a first circuit. The second path includes a second plurality of inverters and a second circuit. The received first output signal is selectively transmitted through the first or second path based on a control signal received from a delay line controller.

Abstract: A varactor includes at least one semiconductor fin, a first gate, and a second gate physically disconnected from the first gate. The first gate and the second gate form a first FinFET and a second FinFET, respectively, with the at least one semiconductor fin. The source and drain regions of the first FinFET and the second FinFET are interconnected to form the varactor.

Abstract: An integrated circuit (IC) die for electromagnetic band gap (EBG) noise suppression is provided. A power mesh and a ground mesh are stacked within a back end of line (BEOL) region overlying a semiconductor substrate, and an inductor is arranged over the power and ground meshes. The inductor comprises a plurality of inductor segments stacked upon one another and connected end to end to define a length of the inductor. A capacitor underlies the power and ground meshes, and is connected in series with the inductor. Respective terminals of the capacitor and the inductor are respectively coupled to the power and ground meshes. A method for manufacturing the IC die is also provided.