Abstract: Among other things, a method for forming an inductor is provided. The method includes forming an insulating layer on a carrier. The method includes forming a trench in the insulating layer. The method also includes forming a magnetic structure within the trench. The method includes forming a conductive trace around the magnetic structure to form the inductor.

Abstract: A method comprises constructing thermal block representations of one or more circuit components or one or more sub-components of the one or more circuit components in an integrated circuit based, at least in part, on defined component parameters. The component parameters describe the one or more sub-components of the one or more circuit components. The thermal block representations have at least one simulation node. The method also comprises supplying a current using at least one current source or voltage controlled current source in a performance simulation. The current is supplied to a thermal path between a first simulation node and a second simulation node. The method further comprises determining a temperature distribution between the first simulation node and the second simulation node based on the current, a first determined voltage at the first simulation node, and a second determined voltage at the second simulation node.

Abstract: A circuit includes a first power node configured to carry a voltage K·VDD, a second power node configured to carry a zero reference level, an output node, K P-type transistors serially coupled between the first power node and the output node, and K N-type transistors serially coupled between the second power node and the output node. Gates of the K P-type transistors are configured to receive biasing signals set at one or more voltage levels in a manner that one or more absolute values of source-gate voltages or absolute values of drain-gate voltages are equal to or less than VDD. Gates of the K N-type transistors are configured to receive biasing signals set at one or more voltage levels in a manner that one or more absolute values of gate-source voltages or gate-drain voltages are equal to or less than VDD.

Abstract: A Dual-Side Illumination (DSI) image sensor chip includes a first image sensor chip configured to sense light from a first direction, and a second image sensor chip aligned to, and bonded to, the first image sensor chip. The second image sensor chip is configured to sense light from a second direction opposite the first direction.

Abstract: A delay line circuit comprises a plurality of delay units configured to receive an input signal and modify the input signal to produce a first output signal. The delay line circuit also comprises a variable delay line unit that comprises an input end configured to receive the first output signal; an output end configured to output a second output signal; a first line between the input end and the output end, the first line comprising, in series, a first inverter, a second inverter, a first speed control unit, and a third inverter; a second line between the input end and the output end, the second line comprising, in series, a fourth inverter, a second speed control unit, a fifth inverter, and a sixth inverter. The delay line circuit is also configured to selectively transmit the received first output signal through one of the first line or the second line.

Abstract: An integrated circuit includes a transistor. The transistor includes a first gate dielectric structure over a substrate, a work-function layer over the first gate dielectric structure, a conductive layer over the work-function layer, and a source/drain (S/D) region adjacent to each sidewall of the first gate dielectric structure. Additionally, the integrated circuit includes a resistor structure. The resistor structure further includes a first doped semiconductor layer over the substrate, wherein a top surface of the resistor structure is substantially planar with a top surface of the transistor.

Abstract: A stacked image sensor and method for making the same are provided. The stacked image sensor includes an upper chip with a pixel array thereon. The second chip includes a plurality of column circuits and row circuits associated with the columns and rows of the pixel array and disposed in respective column circuit and row circuit regions that are arranged in multiple groups. Inter-chip bonding pads are formed on each of the chips. The inter-chip bonding pads on the second chip are arranged linearly and are contained within the column circuit regions and row circuit regions in one embodiment. In other embodiments, the inter-chip bonding pads are staggered with respect to each other. In some embodiments, the rows and columns of the pixel array include multiple signal lines and the corresponding column circuit regions and row circuit regions also include multiple inter-chip bonding pads.

Abstract: A voltage supply unit including a regulator unit, a voltage divider and a first current mirror. The regulator unit is configured to receive a first voltage signal and a second voltage signal, and is configured to generate a third voltage signal. The voltage divider is connected between the first current mirror and the regulator unit, and controls the second voltage signal. The first current mirror is connected to the regulator unit, an input voltage supply and the voltage divider. The first current mirror is configured to generate a first current signal and a second current signal, the second current signal is mirrored from the first current signal, the first current signal is controlled by the third voltage signal and the second current signal controls an output voltage supply signal.

Abstract: An integrated circuit includes a first chip and a second chip coupled to the first chip in a vertical stack. The first chip includes a radio frequency circuit and a first coil electrically coupled to the radio frequency circuit. The second chip includes a calibration circuit and a second coil electrically coupled to the calibration circuit. The calibration circuit is configured to calibrate the radio frequency circuit disposed on the first chip through inductive coupling between the first and second coils.

Abstract: The three dimensional (3D) circuit includes a first tier including a semiconductor substrate, a second tier disposed adjacent to the first tier, a three dimensional inductor including an inductive element portion, the inductive element portion including a conductive via extending from the first tier to a dielectric layer of the second tier. The 3D circuit includes a ground shield surrounding at least a portion of the conductive via. In some embodiments, the ground shield includes a hollow cylindrical cage. In some embodiments, the 3D circuit is a low noise amplifier.

Abstract: A delay line circuit comprises a plurality of delay units configured to receive an input signal and modify the input signal to produce a first output signal. The delay line circuit also comprises a variable delay line unit that comprises an input end configured to receive the first output signal; an output end configured to output a second output signal; a first line between the input end and the output end, the first line comprising, in series, a first inverter, a second inverter, a first speed control unit, and a third inverter; a second line between the input end and the output end, the second line comprising, in series, a fourth inverter, a second speed control unit, a fifth inverter, and a sixth inverter. The delay line circuit is also configured to selectively transmit the received first output signal through one of the first line or the second line.

Abstract: A circuit includes a first power node configured to carry a voltage K·VDD, a second power node configured to carry a zero reference level, an output node, K P-type transistors serially coupled between the first power node and the output node, and K N-type transistors serially coupled between the second power node and the output node. Gates of the K P-type transistors are configured to receive biasing signals set at one or more voltage levels in a manner that one or more absolute values of source-gate voltages or absolute values of drain-gate voltages are equal to or less than VDD. Gates of the K N-type transistors are configured to receive biasing signals set at one or more voltage levels in a manner that one or more absolute values of gate-source voltages or gate-drain voltages are equal to or less than VDD.

Abstract: A semiconductor wafer includes a plurality of dies. Each of the plurality of dies includes a radio frequency identification (RFID) tag circuit and a coil. The RFID tag circuit includes a tag core, an RF front-end circuit, an ID decoder, a comparator and conductive line for a unique ID. The RF front-end circuit is configured to receive electromagnetic signals through the coil in each of the plurality of dies and to convert the received electromagnetic signals into commands. The ID decoder is configured to receive the commands and to generate an expect ID. The comparator is configured to compare the unique ID with the expect ID to generate a comparison result. The comparison result is arranged to decide if the tag core is configured to receive commands.

Abstract: A varainductor includes a spiral inductor over a substrate, the spiral inductor comprising a ring portion. The varainductor further includes a ground ring over the substrate, the ground ring surrounding at least the ring portion of the spiral inductor and a floating ring over the substrate, the floating ring disposed between the ground ring and the spiral inductor. The varainductor further includes an array of switches, the array of switches is configured to selectively connect the ground ring to the floating ring.

Abstract: A phase locked loop (PLL) includes a voltage controlled oscillator (VCO), a loop filter, and a feedback control unit. The VCO is configured to generate a first oscillating signal and a second oscillating signal according to a VCO control signal. The loop filter is configured to output the VCO control signal by low-pass filtering a signal at an input node of the loop filter. The feedback control unit has an output node coupled to the input node of the loop filter, the feedback control unit is configured to apply a first predetermined amount of current, along a first current direction, to the first feedback control output node during a variable period of time; and to apply one of K second predetermined amounts of current, along a second current direction opposite the first current direction, to the first feedback control output node during a predetermined period of time.

Abstract: An integrated circuit includes a digital-to-analog converter (DAC) circuit including at least one first channel type digital-to-analog converter (DAC) and at least one second channel type DAC. The integrated circuit further includes a plurality of sample and hold (S/H) circuits, each of the plurality of S/H circuits being coupled with a single DAC of the DAC circuit. A number of the at least one first channel type DAC is different than a number of the at least one second channel type DAC.

Abstract: The three dimensional (3D) circuit includes a first tier including a semiconductor substrate, a second tier disposed adjacent to the first tier, a three dimensional inductor including an inductive element portion, the inductive element portion including a conductive via extending from the first tier to a dielectric layer of the second tier. The 3D circuit includes a ground shield surrounding at least a portion of the conductive via. In some embodiments, the ground shield includes a hollow cylindrical cage. In some embodiments, the 3D circuit is a low noise amplifier.

Abstract: A method for noise simulation of a CMOS image sensor comprises performing a frequency domain noise simulation for a readout circuit of the CMOS image sensor using a computer, wherein the readout circuit includes a correlated double sampling (CDS) circuit, wherein the frequency domain noise simulation includes a CDS transfer function to refer a noise introduced by the CDS circuit back to an input node of the readout circuit. The method further comprises calculating noise at the input node of the readout circuit based on the referred back noises caused by one or more components in the readout circuit and estimating noise of the CMOS imaging sensor by comparing the calculated noise at the input node of the readout circuit to an original input signal to the readout circuit of the CMOS imaging sensor.

Abstract: The three dimensional (3D) circuit includes a first tier including a semiconductor substrate, a second tier disposed adjacent to the first tier, a three dimensional inductor including an inductive element portion, the inductive element portion including a conductive via extending from the first tier to a dielectric layer of the second tier. The 3D circuit includes a ground shield surrounding at least a portion of the conductive via. In some embodiments, the ground shield includes a hollow cylindrical cage. In some embodiments, the 3D circuit is a low noise amplifier.

Abstract: An integrated circuit includes a digital-to-analog converter (DAC) circuit including at least one first channel type DAC and at least one second channel type DAC. The integrated circuit includes a plurality of sample and hold (S/H) circuits. Each of the S/H circuits is coupled with the DAC circuit. The S/H circuits are capable of receiving signals from the DAC circuit and outputting the signals in parallel.