Abstract: An aircraft system includes an aircraft, which further includes at least one propeller to provide a flight power for the aircraft; a communication interface configured to communicate with a parachute; at least one storage medium, storing at least one set of instructions for controlling the aircraft system; and at least one processor in communication with the at least one memory. when the aircraft system is in operation, the at least processor executes the at least one set of instruction to: obtain a propeller locking instruction of the aircraft, and perform a corresponding operation based on the propeller locking instruction. The corresponding operation include a first operation. The first operation, corresponds to a scenario where the aircraft is in a flight state, includes: in response to the propeller locking instruction, the aircraft controlling the at least one propeller to stop and locking the at least one propeller, and deploying the parachute by the aircraft.

Abstract: An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a

Abstract: A mobile device attachment adapted for a mobile device and a container for food or liquid is provided. The mobile device attachment includes a magnetic connecting member and a connecting member. The magnetic connecting member is selectively magnetically connected to the mobile device and adapted to extend in an escaping direction. The connecting member is disposed between the container and the magnetic connecting member. The mobile device has an image capturing range. When the magnetic connecting member extends in the escaping direction, the container, the magnetic connecting member and the connecting member are located outside the image capturing range. Besides, a container including the mobile device attachment is also provided.

Abstract: The present invention relates to the field of biomedicine, and in particular to a use of goji glycopeptide in the preparation of a drug for preventing and/or treating amyotrophic lateral sclerosis. Experimental results prove the use of goji glycopeptide in the preparation of a drug for preventing and/or treating amyotrophic lateral sclerosis.

Abstract: The robotic arm operating system includes a control device, a plurality of joint devices and a brake release monitoring device. The control device is used to generate an operation instruction. The joint device is coupled to the control device. Each joint device includes a motor and a driver. The drivers of the joint devices receive the operation instruction to generate corresponding multiple unlocking signals. The unlocking signals are used to release a braking state of the motors of the corresponding joint devices. The brake release monitoring device is coupled to the control device and the joint devices, and includes a plurality of monitoring circuits. When one of the plurality of monitoring circuits does not receive the corresponding unlocking signal, the brake release monitoring device notifies the control device that the operation instruction is not allowed.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: A sensor package structure and a manufacturing method thereof are provided. The sensor package structure includes a substrate, a fixing adhesive layer disposed on the substrate, a sensor chip adhered to the fixing adhesive layer, an annular adhering layer disposed on the sensor chip, a light-permeable sheet adhered to the annular adhering layer, and a plurality of metal wires that are electrically coupled to the substrate and the sensor chip. The size of the light-permeable sheet is smaller than that of the sensor chip.

Abstract: A sensor package structure includes a substrate, a sensor chip disposed on the substrate along a predetermined direction for being electrically coupled to each other, a light-permeable layer, an adhesive layer having a ring-shape and sandwiched between the sensor chip and the light-permeable layer, and an encapsulant formed on the substrate. The adhesive layer is formed with at least one type of a buffering cavity, wave-shaped slots, and rectangular slots, which penetrate therethrough along the predetermined direction. The buffering cavity can be located in the adhesive layer, and any one type of the wave-shaped slots and the rectangular slots can be respectively recessed in an inner side and an outer side of the adhesive layer. A minimum width of the adhesive layer is greater than or equal to 50% of a predetermined width between the inner side and the outer side.

Abstract: A semiconductor structure including a substrate, a first dielectric layer disposed on the substrate, a second dielectric layer disposed on the first dielectric layer and in physical contact with the first dielectric layer, an opening on the substrate and having a lower portion through the first dielectric layer and an upper portion through the second dielectric layer, an conductive layer disposed on the second dielectric layer at two sides of the opening and in physical contact with the second dielectric layer, a contact structure disposed in the lower portion of the opening, and a passivation layer covering a top surface of the contact structure, a sidewall of the second dielectric layer, and a sidewall of the conductive layer.

Abstract: A semiconductor device and a method for forming the same are provided. The semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first electrode, a second electrode on one side of the first electrode, and a resistive switching film between the first electrode and the second electrode. The first electrode, the resistive switching film and the second electrode are arranged along the first direction. The second semiconductor structure includes a first via and a first metal layer on the first via along a second direction and electrically connected to the first via. The first direction is perpendicular to the second direction. An upper surface of the first electrode, an upper surface of the second electrode, an upper surface of the resistive switching film and an upper surface of the first metal layer are coplanar.

Abstract: A memory device is provided. The memory device includes a write pass-gate transistor, a read pass-gate transistor, a write word line, and a read word line. The write pass-gate transistor is disposed in a first layer. The read pass-gate transistor is disposed in a second layer above the first layer. The write word line is disposed in a metallization layer above the first layer and electrically coupled to the write pass-gate transistor through a write path. The read word line is disposed in the metallization layer and electrically coupled to the read pass-gate transistor through a read path. The write path is different from the read path.

Abstract: A sensor package structure includes a substrate, a sensor chip disposed on and electrically coupled to the substrate, a light-permeable layer, an adhesive layer having a ring-shape and sandwiched between the sensor chip and the light-permeable layer, and an encapsulant formed on the substrate. The adhesive layer has two adhering surfaces having a same area and a middle cross section located at a middle position between the two adhering surfaces. An area of the middle cross section is 115% to 200% of an area of any one of the two adhering surfaces. The adhesive layer can provide for light to travel therethrough, and enables the light therein to change direction and to attenuate. The sensor chip, the adhesive layer, and the light-permeable layer are embedded in the encapsulant, and an outer surface of the light-permeable layer is at least partially exposed from the encapsulant.

Abstract: A semiconductor package includes a first semiconductor die, an encapsulant, a high-modulus dielectric layer and a redistribution structure. The first semiconductor die includes a conductive post in a protective layer. The encapsulant encapsulates the first semiconductor die, wherein the encapsulant is made of a first material. The high-modulus dielectric layer extends on the encapsulant and the protective layer, wherein the high-modulus dielectric layer is made of a second material. The redistribution structure extends on the high-modulus dielectric layer, wherein the redistribution structure includes a redistribution dielectric layer, and the redistribution dielectric layer is made of a third material. The protective layer is made of a fourth material, and a ratio of a Young's modulus of the second material to a Young's modulus of the fourth material is at least 1.5.

Abstract: A dual-band antenna module includes a first antenna structure and a second antenna structure. The first antenna structure includes a first insulating substrate, a conductive metal layer, a plurality of grounding supports, and a first feeding pin. The second antenna structure includes a second insulating substrate, a top metal layer, a bottom metal layer, and a second feeding pin. The conductive metal layer is disposed on the first insulating substrate. The grounding supports are configured for supporting the first insulating substrate. The second insulating substrate is disposed above the first insulating substrate. The top metal layer and the bottom metal layer are respectively disposed on a top side and a bottom side of the second insulating substrate. The first frequency band signal transmitted or received by the first antenna structure is smaller than the second frequency band signal transmitted or received by the second antenna structure.

Abstract: A deposition method including following steps is provided. A first precursor is injected into a chamber along a first direction, and a bias power supply is turned on to attract the first precursor to a substrate. A second precursor is injected into the chamber along a second direction perpendicular to the first direction, and the bias power supply is turned on to attract the second precursor to the substrate. A first inert gas is injected into the chamber along the first direction, and the bias power supply is turned off to purge an unnecessary part of the first precursor or an unnecessary part of the second precursor or a by-product. A second inert gas is injected the chamber along the second direction, and the bias power supply is turned off to purge the unnecessary part of the first precursor or the unnecessary part of the second precursor or the by-products.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: An electronic device may include a lenticular display. The lenticular display may have a lenticular lens film formed over an array of pixels. The display may have a number of independently controllable viewing zones. Each viewing zone displays a respective two-dimensional image. Each eye of the viewer may receive a different one of the two-dimensional images, resulting in a perceived three-dimensional image. The electronic device may include display pipeline circuitry that generates and processes content to be displayed on the lenticular display. Content generating circuitry may generate content that includes a plurality of two-dimensional images, each two-dimensional image corresponding to a respective viewing zone. Pixel mapping circuitry may be used to map the two-dimensional images to the array of pixels in the lenticular display. The array of pixels may have a diagonal layout. An offset map may be used by the pixel mapping circuitry to account for the diagonal layout.

Abstract: A gas extraction device for metal mineral inclusions and a gas extraction method therefor are provided, the device includes a base plate, an annular carrier, sealing covers, a grinding assembly, a vacuum assembly, a gas-gathering assembly and a mass spectrometer. The annular carrier is disposed on the base plate, multiple grinding chambers are defined and evenly distributed in a circular shape on the annular carrier, the sealing covers are disposed at openings of the grinding chambers, the grinding assembly includes grinding hammers, and the grinding hammers penetrate through the sealing covers and extend into the grinding chambers. Side walls of each grinding chamber defines a first through hole and a second through hole. The vacuum assembly is communicated with the grinding chambers through the first through holes. The gas-gathering assembly is communicated with the grinding chambers through the second through holes. The mass spectrometer is communicated with the gas-gathering assembly.

Abstract: An electronic device and a method for manufacturing the same are provided. The electronic device includes a substrate and a gate structure. The substrate includes a fin. The fin includes a source region and a drain region spaced apart from the source region. The gate structure is located between the source region and the drain region. The gate structure includes a work function layer. The work function layer includes a compound of a metal material and a Group VIA material.

Abstract: An electronic device may include a lenticular display. The lenticular display may have a lenticular lens film formed over an array of pixels. A plurality of lenticular lenses may extend across the length of the display. The lenticular lenses may be configured to enable stereoscopic viewing of the display such that a viewer perceives three-dimensional images. The display may have a number of independently controllable viewing zones. The viewer may be particularly susceptible to artifacts caused by crosstalk at the edge viewing zones within the primary field of view of the display. Certain types of content may also be more vulnerable to crosstalk than other types of content. Therefore, to mitigate crosstalk artifacts, the pixel value for each pixel may be adjusted based on the viewing zone of the respective pixel and content information (such as texture information or brightness information) associated with the respective pixel.