Abstract: Embodiments of the present application provide a screen body support device, including: a fixing bracket; a movable bracket being rotatably connected with the fixing bracket, in which the movable bracket and the fixing bracket are provided in a non-display area of a flexible display screen; and a driving component being fixedly connected with the movable bracket, in which the driving component is configured to drive the movable bracket to swing in two opposite directions with respect to the fixing bracket, so that the flexible display screen is bent in two opposite directions respectively.

Abstract: A waste collection apparatus for collecting waste in water is provided. The waste collection apparatus includes a floating device and a waste collection device coupled to the floating device. The floating device includes a plurality of floating units. The waste collection device is coupled to the floating device. Each of the floating units includes a base and a pillar connected to the base, and the density of the base is greater than the density of the pillar.

Abstract: A waste collection apparatus for collecting waste in water is provided. The waste collection apparatus includes a floating device and a waste collection device coupled to the floating device. The waste collection device includes a fluid ejection element, and the flow out of the fluid ejection element flows toward a space where waste is collected.

Abstract: A memory device and an operation method thereof are provided. The memory device includes memory cells, each having a static random access memory (SRAM) cell and a non-volatile memory cell. The SRAM cell is configured to store complementary data at first and second storage nodes. The non-volatile memory cell is configured to replicate and retain the complementary data before the SRAM cell loses power supply, and to rewrite the replicated data to the first and second storage nodes of the SRAM cell after the power supply of the SRAM cell is restored.

Abstract: A detection method and system for inspecting a defect on a semi-reflective film by way of different light sources illuminated on the semi-reflective film along the same axis. More specifically, a P-polarized light source and an S-polarized light source are used to illuminate the defect on the semi-reflective film, with an illumination direction that is between 5-45 degrees relative to the semi-reflective film. A camera module captures an image to be inspected through the phenomenon that the P-polarized light will partially pass through the semi-reflective film, and the S-polarized light will be almost completely reflected by the semi-reflective film. During the detection, the defect is determined to be located on the front surface of the semi-reflective film when the S-polarized light is present in the image, and the defect is determined to be located on the back surface of the semi-reflective film when the P-polarized light is present in the image and no S-polarized light has entered the camera module.

Abstract: An electronic device includes a chip and a circuit structure layer overlapped with the chip. The circuit structure layer includes a redistribution structure layer and an element structure layer, and the redistribution structure layer and the element structure layer are electrically connected to the chip. At least one of the redistribution structure layer and the element structure layer includes at least one opening, and in a normal direction of the electronic device, the at least one opening is overlapped with aside of the chip.

Abstract: A resistive random access memory (RRAM) structure includes a RRAM cell, spacers and a dielectric layer. The RRAM cell is disposed on a substrate. The spacers are disposed beside the RRAM cell, wherein widths of top surfaces of the spacers are larger than or equal to widths of bottom surfaces of the spacers. The dielectric layer blanketly covers the substrate and sandwiches the RRAM cell, wherein the spacers are located in the dielectric layer. A method for forming the resistive random access memory (RRAM) structure is also provided.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: A RRAM device includes a bottom electrode, a resistive material layer, atop electrode, a hard mask and high work function sidewall parts. The bottom electrode, the resistive material layer, the top electrode and the hard mask are sequentially stacked on a substrate. The high work function sidewall parts cover sidewalls of the top electrode and sidewalls of the hard mask, thereby constituting a RRAM cell. A method of forming the RRAM device is also provided.

Abstract: A support assembly and a display device. The support assembly includes a body mechanism and a first support member. A first surface of the body mechanism is configured to support a part of the flexible screen. At least a part of the first support member is disposed side by side with the body mechanism, and configured to support another part of the flexible screen which extends out of the first surface. The first support member includes a first end and a second end disposed along a length direction of the first support member. The first end is fixed relative to the body mechanism, and the second end is configured to slide along a direction close to or away from the body mechanism.

Abstract: A head mounted display device, including a frame, a mask, at least one infrared (IR) transmitter, and at least one image capture device, is provided. The mask has a first light reflection layer on a first side. The IR transmitter is disposed in the frame and is used to emit an emitting light beam toward the first light reflection layer. The first light reflection layer reflects the emitting light beam to send a reflective light beam toward a target area. The image capture device is disposed in the frame and is used to capture a target area reflective image of the target area.

Abstract: A support apparatus for a flexible screen, a foldable display module and a display device. The support apparatus for the flexible screen includes a support portion and a driving assembly. The support portion includes a first support portion and a second support portion connected with the first support portion. The driving assembly includes a rotary shaft assembly and a linkage assembly connected with the rotary shaft assembly. The rotary shaft assembly includes a plurality of rotary shafts arranged in parallel. The second support portion is slidably provided on the rotary shaft assembly and can be bent or unfolded together with the rotary shaft assembly. When the rotary shaft assembly is bent, the first support portion is driven by the linkage assembly to move away from or close to the rotary shaft assembly.

Abstract: An RRAM includes a bottom electrode, a resistive switching layer and a top electrode. The bottom electrode includes an inverted T-shaped profile. The resistive switching layer covers the bottom electrode. The top electrode covers the resistive switching layer. The inverted T-shaped profile includes a bottom element and a vertical element. The vertical element is disposed on the bottom element. The shape of the vertical element includes a rectangle or a trapezoid.

Abstract: A method of forming a memory device includes the following operations. A first conductive plug is formed within a first dielectric layer over a substrate. A treating process is performed to transform a portion of the first conductive plug into a buffer layer, and the buffer layer caps the remaining portion of the first conductive plug. A phase change layer and a top electrode are sequentially formed over the buffer layer. A second dielectric layer is formed to encapsulate the top electrode and the underlying phase change layer. A second conductive plug is formed within the second dielectric layer and in physical contact with the top electrode. A filamentary bottom electrode is formed within the buffer layer.

Abstract: A system for adding an external function to a webpage includes: one or more processors; and memory communicably connected to the one or more processors and storing instructions that, when executed by the one or more processors, cause the one or more processors to: receive code associated with the webpage from a remote server; identify a plurality of images in the code; filter the plurality of images to identify a first type of image different from other images of the plurality of images; and append the external function to the first type of image to display a modified webpage including the external function on a display device of a first user.

Abstract: Provided are a resistive random access memory (RRAM) and a manufacturing method thereof. The resistive random access memory includes multiple unit structures disposed on a substrate. Each of the unit structures includes a first electrode, a first metal oxide layer, and a spacer. The first electrode is disposed on the substrate. The first metal oxide layer is disposed on the first electrode. The spacer is disposed on sidewalls of the first electrode and the first metal oxide layer. In addition, the resistive random access memory includes a second metal oxide layer and a second electrode. The second metal oxide layer is disposed on the unit structures and is connected to the unit structures. The second electrode is disposed on the second metal oxide layer.

Abstract: In some aspects of the present disclosure, a memory array structure is disclosed. In some embodiments, the memory array structure includes a word array. In some embodiments, the word array stores an N-bit word. In some embodiments, the word array includes a plurality of first memory structures and a plurality of second memory structures. In some embodiments, each first memory structure includes a first transistor and a first memory element. In some embodiments, each second memory structure includes a second transistor and a plurality of second memory elements, each second memory element includes a first end and a second end, the first end of each second memory element is coupled to a corresponding bit line, and the second end of each second memory element is coupled to a first end of the second transistor.

Abstract: The present disclosure provides an accessory for a handheld device. The accessory includes a first base, a second base, a first flexible element and a second flexible element. The first flexible element and the second flexible element are respectively disposed at the first base. The first flexible element has a first track. The second flexible element has a second track. The second base has a fastener for engaging with the first track and the second track. The first flexible element is flexed based on sliding of the fastener along the first track. The second flexible element is flexed based on sliding of the fastener along the second track.

Abstract: A RRAM device includes a bottom electrode, a resistive material layer, a high work function layer, a top electrode, a hard mask and high work function sidewall parts. The bottom electrode, the resistive material layer, the high work function layer, the top electrode and the hard mask are sequentially stacked on a substrate. The high work function sidewall parts cover sidewalls of the top electrode and sidewalls of the hard mask, thereby constituting a RRAM cell. A method of forming said RRAM device is also provided.

Abstract: Provided is a resistive random-access memory device, including a dielectric layer located on a substrate, a first electrode which is a column located on the dielectric layer, a second electrode covering a top surface and a sidewall of the first electrode, and a variable resistance layer sandwiched between the top surface of the first electrode and the second electrode and between the sidewall of the first electrode and the second electrode and located between the second electrode and the dielectric layer.