Abstract: A particles capturing system includes a venturi filter device, a cyclone filter device, a plurality of first nozzles and air to flow through the system. The venturi filter device has an air intake portion, a neck portion and an air outlet portion. The cyclone filter device, disposed in the air outlet portion, has an entrance and an exit. The plurality of first nozzles, disposed inside the venturi filter device, have a height greater than that of the the neck portion. When the air flows, the air enters the venturi filter device via an air inlet of the air intake portion, then orderly passes through the neck portion and the plurality of first nozzles, then enters the cyclone filter device via the entrance, and finally leaves the cyclone filter device via the exit, such that particles in the flowing air can be captured.

Abstract: A data processing method, a data processing circuit, and a computing apparatus are provided. In the method, data is obtained. A first value of a bit of the data is switched into a second value according to data distribution and an accessing property of memory. The second value of the bit is stored in the memory in response to switching the bit.

Abstract: A resistive random access memory structure includes a first inter-layer dielectric layer; a bottom electrode disposed in the first inter-layer dielectric layer; a capping layer disposed on the bottom electrode and on the first inter-layer dielectric layer; and a through hole disposed in the capping layer. The through hole partially exposes a top surface of the bottom electrode. A variable resistance layer is disposed within the through hole. A top electrode is disposed within the through hole and on the variable resistance layer. A second inter-layer dielectric layer covers the top electrode and the capping layer.

Abstract: The present disclosure provides a foldable apparatus for receiving a foldable device. The foldable apparatus includes a casing for receiving the foldable device. The casing includes a body and a bending zone. The body is for providing an accommodation to the foldable device. The bending zone is for folding the body from an unfolded position to a folded position. The bending zone includes a stress relaxation structure for retaining the body in the folded position and reversing the body to the unfolded position.

Abstract: A method for manufacturing a semiconductor device includes: forming a patterned structure on a substrate, the patterned structure including a dielectric layer and a dummy gate structure disposed in the dielectric layer; and subjecting the patterned structure to an ion implantation process so as to modulate a profile of the dummy gate structure.

Abstract: A method of forming a memory device includes the following operations. A first conductive plug is formed within a first dielectric layer over a substrate. A treating process is performed to transform a portion of the first conductive plug into a buffer layer, and the buffer layer caps the remaining portion of the first conductive plug. A phase change layer and a top electrode are sequentially formed over the buffer layer. A second dielectric layer is formed to encapsulate the top electrode and the underlying phase change layer. A second conductive plug is formed within the second dielectric layer and in physical contact with the top electrode. A filamentary bottom electrode is formed within the buffer layer.

Abstract: An intensity of a power laser beam applied to a semiconductor device is adjusted. An applied intensity of the power laser beam is indicative of a magnitude at which the power laser beam is emitted toward the semiconductor device and a reflection intensity of a probing laser beam applied to the semiconductor device is indicative of an emissivity of the semiconductor device. The reflection intensity of the probing laser beam is measured to determine the emissivity of the semiconductor device and the applied intensity of the power laser beam is adjusted as a function of the emissivity.

Abstract: The present disclosure provides a foldable apparatus for receiving a foldable device. The foldable apparatus includes a casing for receiving the foldable device. The casing includes a body and a bending zone. The body is for providing an accommodation to the foldable device. The bending zone is for folding the body from an unfolded position to a folded position. The bending zone includes a stress relaxation structure for retaining the body in the folded position and reversing the body to the unfolded position.

Abstract: A system for adding an external function to a webpage includes: one or more processors; and memory communicably connected to the one or more processors and storing instructions that, when executed by the one or more processors, cause the one or more processors to: receive code associated with the webpage from a remote server; identify a plurality of images in the code; filter the plurality of images to identify a first type of image different from other images of the plurality of images; and append the external function to the first type of image to display a modified webpage including the external function on a display device of a first user.

Abstract: Provided is a resistive memory structure and a manufacturing method thereof. The resistive memory structure includes a substrate, a dielectric layer, a resistive memory device, a hard mask layer, and a spacer. The dielectric layer is located on the substrate. The dielectric layer has an opening. The resistive memory device is located in the opening and has a protrusion outside the opening. The resistive memory device includes a first electrode, a variable resistance layer, and a second electrode. The variable resistance layer is located on the first electrode. The second electrode is located on the variable resistance layer. The hard mask layer covers a top surface of the variable resistance layer. The spacer covers a sidewall of the variable resistance layer in the protrusion.

Abstract: The present disclosure provides an accessory for a handheld device. The accessory includes a first base, a second base, a first flexible element and a second flexible element. The first flexible element and the second flexible element are respectively disposed at the first base. The first flexible element has a first track. The second flexible element has a second track. The second base has a fastener for engaging with the first track and the second track. The first flexible element is flexed based on sliding of the fastener along the first track. The second flexible element is flexed based on sliding of the fastener along the second track.

Abstract: A detecting method for a behavior disorder event during rapid-eye-movement sleep is provided. The detecting method includes: collecting a heart rate value and a motion value of a user per epoch within a time period; generating a plurality of corresponding sleep condition values by using the motion values, to distinguish epochs into an awake period and a sleep period; transforming the motion values corresponding to the sleep period into a score according to a predetermined rule, to generate a plurality of sleep depth scores, and distinguishing the sleep period into a light sleep period and a deep sleep period by using the sleep depth scores; grouping the heart rate values corresponding to the deep sleep period as a high heart rate group and a low heart rate group; and determining, when the motion values corresponding to the high heart rate group satisfy a condition, that a behavior disorder event happens.

Abstract: A resistive memory device is provided. The resistive memory device includes a first electrode, a memory structure on the first electrode, and a second electrode on the memory structure. The memory structure includes a tubular element and a pillar element. The tubular element includes oxide. The pillar element includes oxide. The pillar element is surrounded by the tubular element. The tubular element and the pillar element include different materials.

Abstract: A memory device and an operation method thereof are provided. The memory device includes memory cells, each having a static random access memory (SRAM) cell and a non-volatile memory cell. The SRAM cell is configured to store complementary data at first and second storage nodes. The non-volatile memory cell is configured to replicate and retain the complementary data before the SRAM cell loses power supply, and to rewrite the replicated data to the first and second storage nodes of the SRAM cell after the power supply of the SRAM cell is restored.

Abstract: In a method of manufacturing a semiconductor device, a conductive pattern is formed in a surface region of a dielectric layer, a mask pattern including an opening over the conductive pattern is formed over the dielectric layer, a part of the conductive pattern is converted into a high-resistant part having a higher resistivity than the conductive pattern before the converting through the opening, and the mask pattern is removed.

Abstract: A memory structure including a substrate, a first dielectric layer, a second dielectric layer, a charge storage layer, an oxide layer, and a conductive layer is provided. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The charge storage layer is disposed between the first dielectric layer and the second dielectric layer. The oxide layer is located at two ends of the charge storage layer and is disposed between the first dielectric layer and the second dielectric layer. The conductive layer is disposed on the second dielectric layer.

Abstract: A static random-access memory (SRAM) cell including a transistor is introduced. The transistor includes substrate and gate stack structure disposed over the substrate, in which the gate stack structure includes a gate oxide layer, a ferroelectric layer, and a conductive layer. The gate oxide layer is disposed over the substrate; the ferroelectric layer is disposed over the gate oxide layer, wherein the ferroelectric layer has a negative capacitance effect; and the first conductive layer, disposed over the ferroelectric layer. A method of adjusting a threshold voltage of a transistor in the SRAM is also introduced.

Abstract: A ReRAM device includes a dielectric layer, a bottom electrode, a data storage layer, a metal covering layer, and a top electrode. The dielectric layer has a recess. At least a portion of the bottom electrode is exposed through the recess. The data storage layer is disposed on a sidewall and a bottom surface of the recess, electrically contacts with the bottom electrode, and has a top portion lower than an opening of the recess. The metal covering layer blanket covers the data storage layer, has an extension portion covering the top portion, and connects to the sidewall of the recess. The top electrode is disposed in the recess, and is electrically contact with the metal covering layer.

Abstract: A data processing method, a data processing circuit, and a computing apparatus are provided. In the method, data is obtained. A first value of a bit of the data is switched into a. second value according to data distribution and an accessing property of memory. The second value of the bit is stored in the memory in response to switching the bit.

Abstract: A system for estimating BPs using a PPG signal analysis comprises an upper-arm wearable apparatus, a cuff-based BP measuring apparatus, a PPG signal receiver and analyzer, and a PPG to BP estimator and calibrator. The upper-arm wearable apparatus senses modeling-used PPG waveform signals. The cuff-based BP measuring apparatus obtains real PVR waveforms and real BPs. The PPG signal receiver and analyzer is configured to process the modeling-used PPG waveform signals and derive modeling-used characteristic parameters, and have modeling-used personal information parameters. The PPG to BP estimator and calibrator is configured to calculate estimated BPs based on the modeling-based characteristic parameters and the modeling-used personal information parameters, store a calibration model which approximately fits relationship between the estimated BPs and the real BPs; and calculate modeling-used calibrated-estimated BPs using the calibration model.