Abstract: An electronic device may include a lenticular display. The lenticular display may have a lenticular lens film formed over an array of pixels. The display may have a number of independently controllable viewing zones. Each viewing zone displays a respective two-dimensional image. Each eye of the viewer may receive a different one of the two-dimensional images, resulting in a perceived three-dimensional image. The electronic device may include display pipeline circuitry that generates and processes content to be displayed on the lenticular display. Content generating circuitry may generate content that includes a plurality of two-dimensional images, each two-dimensional image corresponding to a respective viewing zone. Pixel mapping circuitry may be used to map the two-dimensional images to the array of pixels in the lenticular display. The array of pixels may have a diagonal layout. An offset map may be used by the pixel mapping circuitry to account for the diagonal layout.

Abstract: A gas extraction device for metal mineral inclusions and a gas extraction method therefor are provided, the device includes a base plate, an annular carrier, sealing covers, a grinding assembly, a vacuum assembly, a gas-gathering assembly and a mass spectrometer. The annular carrier is disposed on the base plate, multiple grinding chambers are defined and evenly distributed in a circular shape on the annular carrier, the sealing covers are disposed at openings of the grinding chambers, the grinding assembly includes grinding hammers, and the grinding hammers penetrate through the sealing covers and extend into the grinding chambers. Side walls of each grinding chamber defines a first through hole and a second through hole. The vacuum assembly is communicated with the grinding chambers through the first through holes. The gas-gathering assembly is communicated with the grinding chambers through the second through holes. The mass spectrometer is communicated with the gas-gathering assembly.

Abstract: The disclosure provides at compounds of Formula I, compositions comprising the same, and methods of using the same, including use in treating diseases, disorders of conditions mediated by the signaling of formyl peptide receptor 1 (FPR1).

Abstract: An electronic device and a method for manufacturing the same are provided. The electronic device includes a substrate and a gate structure. The substrate includes a fin. The fin includes a source region and a drain region spaced apart from the source region. The gate structure is located between the source region and the drain region. The gate structure includes a work function layer. The work function layer includes a compound of a metal material and a Group VIA material.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: An electronic device may include a lenticular display. The lenticular display may have a lenticular lens film formed over an array of pixels. A plurality of lenticular lenses may extend across the length of the display. The lenticular lenses may be configured to enable stereoscopic viewing of the display such that a viewer perceives three-dimensional images. The display may have a number of independently controllable viewing zones. The viewer may be particularly susceptible to artifacts caused by crosstalk at the edge viewing zones within the primary field of view of the display. Certain types of content may also be more vulnerable to crosstalk than other types of content. Therefore, to mitigate crosstalk artifacts, the pixel value for each pixel may be adjusted based on the viewing zone of the respective pixel and content information (such as texture information or brightness information) associated with the respective pixel.

Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.

Abstract: A resistive random-access memory (RRAM) device includes a bottom electrode, a high work function layer, a resistive material layer, a top electrode and high work function spacers. The bottom electrode, the high work function layer, the resistive material layer and the top electrode are sequentially stacked on a substrate, wherein the resistive material layer includes a bottom part and a top part. The high work function spacers cover sidewalls of the bottom part, thereby constituting a RRAM cell. The present invention also provides a method of forming a RRAM device.

Abstract: A resistive memory device includes a dielectric layer, a via connection structure, a stacked structure, and an insulating structure. The via connection structure is disposed in the dielectric layer. The stacked structure is disposed on the via connection structure and the dielectric layer. The insulating structure penetrates through the stacked structure in a vertical direction and divides the stacked structure into a first memory cell unit and a second memory cell unit. The first memory cell unit includes a first bottom electrode, and the second memory cell unit includes a second bottom electrode separated from the first bottom electrode by the insulating structure. The via connection structure is electrically connected with the first bottom electrode and the second bottom electrode.

Abstract: A hinge device includes a pivot seat, a rotating shaft, a first friction block, and a locking assembly. By being structurally provided with a sleeve, a first cam ring, a first elastic ring, a second friction block, a second cam ring, a second elastic ring, an elastic element, a locking portion, and a cover of the locking assembly, the hinge device has a locking function and a long service life.

Abstract: Provided is a resistive random access memory (RRAM). The resistive random access memory includes a plurality of unit structures disposed on a substrate. Each of the unit structures includes a first electrode, and a first metal oxide layer. The first electrode is disposed on the substrate. The first metal oxide layer is disposed on the first electrode. In addition, the resistive random access memory includes a second electrode. The second electrode is disposed on the plurality of unit structures and connected to the plurality of unit structures.

Abstract: A multi-piece wheel frame includes a rim and a disc. The rim includes a barrel, and an outer rim portion protruding outwardly from the barrel. The outer rim portion forms an inclined surface, and a ring edge surface connected to an outer edge of the inclined surface and cooperating with the inclined surface to form an obtuse angle. The disc is fixed to the rim, and includes a disc core, a plurality of spoke portions extending radially outwardly from the disc core, and a reinforced ring portion connected to the spoke portions and fixed to the outer rim portion. The reinforced ring portion abuts against at least one of the inclined surface and the ring edge surface.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: Provided are a wireless signal apparatus and an elevator service request system and method, which belong to the field of intelligent elevator control technologies. In the elevator service request system of the present invention, a corresponding wireless signal is broadcast by a wireless signal apparatus of an elevator system and the wireless signal is received by a personal mobile terminal. The personal mobile terminal is provided with an elevator service request application component running at an application layer of an operating system thereof. The wireless signal apparatus includes a location notification unit used for broadcasting corresponding location marker data. The elevator service request system includes a wake-up module running at a system layer of the operating system of the personal mobile terminal. The wake-up module is used for waking up the elevator service request application component in response to reception of the location marker data.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: An ultrasound scanning control method applied to an ultrasound scanning device is provided. The ultrasound scanning device includes an execution mechanism. The execution mechanism includes a mechanical arm and a probe. The ultrasound scanning control method includes controlling the mechanical arm to drive the probe to move according to a set scanning trajectory for performing an ultrasound scanning detection on a part to be examined. Once an actual pressure value between the probe and the part to be examined in each control cycle is sensed using the force sensor, a pressure value between the probe and the part to be examined is controlled to be a constant value based on the actual pressure value.

Abstract: A method and system for detecting the location of a surface defect on a transparent film with respect to whether the surface defect is at a front or back surface of the film. By illuminating the surface defect with a light source from an oblique angle and capturing an image of the surface defect using a camera which is positioned along an axis where the light illuminates after unobstructedly reflected from the test surface of the film, and using the reflected light, an image of the surface defect is obtained. A computer executes an evaluation logic to determine whether the image of the defect contains any dark area. If there is a dark area present, the defect is judged to be on the front surface of the film. If there is no dark area present, the defect is judged to be on the back surface of the film.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.

Abstract: Embodiments of the present application provide a screen body support device, including: a fixing bracket; a movable bracket being rotatably connected with the fixing bracket, in which the movable bracket and the fixing bracket are provided in a non-display area of a flexible display screen; and a driving component being fixedly connected with the movable bracket, in which the driving component is configured to drive the movable bracket to swing in two opposite directions with respect to the fixing bracket, so that the flexible display screen is bent in two opposite directions respectively.

Abstract: A waste collection apparatus for collecting waste in water is provided. The waste collection apparatus includes a floating device and a waste collection device coupled to the floating device. The floating device includes a plurality of floating units. The waste collection device is coupled to the floating device. Each of the floating units includes a base and a pillar connected to the base, and the density of the base is greater than the density of the pillar.