Abstract: An asymmetric handshaking design between an access point (AP) and a station (STA) is introduced. An access point is controlled to transmit packets in a first packet format. In response to packets transmitted from the access point in the first packet format, a station is switched to use a second packet format to transmit packets to form asymmetric handshaking with the access point when the station fails to use the first packet format to answer the access point.

Abstract: A method of making a curved electrochromic film includes: disposing a UV curable adhesive layer between a first electrochromic member and a second electrochromic member to form an electrochromic film semi-product in flat form; arching the electrochromic film semi-product between the first and second bending members of a forming apparatus and by moving the first and second bending members toward each other; and curing the UV curable adhesive layer using a UV light source while the electrochromic film semi-product is arched. Forming apparatuses for forming a flat electrochromic film semi-product into a curved electrochromic film are also disclosed.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A first stacked structure and a second stacked structure are formed on a core region and an input/output (I/O) region of a semiconductor substrate respectively. The first stacked structure includes a first patterned oxide layer, a first patterned nitride layer, and a first dummy gate. The second stacked structure includes a second patterned oxide layer, a second patterned nitride layer, and a second dummy gate. The first dummy gate and the second dummy gate are removed for forming a first recess above the core region and a second recess above the I/O region. A first gate structure is formed in the first recess and a second gate structure is formed in the second recess. The first patterned nitride layer is removed before the step of forming the first gate structure in the first recess.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A first stacked structure and a second stacked structure are formed on a core region and an input/output (I/O) region of a semiconductor substrate respectively. The first stacked structure includes a first patterned oxide layer, a first patterned nitride layer, and a first dummy gate. The second stacked structure includes a second patterned oxide layer, a second patterned nitride layer, and a second dummy gate. The first dummy gate and the second dummy gate are removed for forming a first recess above the core region and a second recess above the I/O region. A first gate structure is formed in the first recess and a second gate structure is formed in the second recess. The first patterned nitride layer is removed before the step of forming the first gate structure in the first recess.

Abstract: A semiconductor device and a method for manufacturing the same are provided in the present invention. The semiconductor device includes a substrate, a gate structure on the substrate and two spacers on both sidewalls of the gate structure. Each spacer comprises an inner first spacer portion made of SiCN and an outer second spacer portion made of SiOCN.

Abstract: A semiconductor device and a method for manufacturing the same are provided in the present invention. The semiconductor device includes a substrate, agate structure on the substrate and two spacers on both sidewalls of the gate structure. Each spacer comprises an inner first spacer portion made of SiCN and an outer second spacer portion made of SiOCN.

Abstract: A semiconductor device and a method for manufacturing the same are provided in the present invention. The semiconductor device includes a substrate, agate structure on the substrate and two spacers on both sidewalls of the gate structure. Each spacer comprises an inner first spacer portion made of SiCN and an outer second spacer portion made of SiOCN.

Abstract: A method for forming a semiconductor device is provided. First, a dielectric layer is provided on a substrate, wherein a first recess and a second recess are formed in the dielectric layer. After a mask layer is filled into the first recess and the second recess, the mask layer in the second recess is removed away, thereby forming a patterned mask layer. Subsequently, a nitride treatment is performed to remove unwanted residue of the mask layer in the second recess.

Abstract: A method of fabricating a semiconductor device is provided. A plurality of sacrificial gates and a plurality of sacrificial gate dielectric layers thereunder are formed on a substrate. An interlayer dielectric layer is filled between the sacrificial gates. A protective layer is formed on the interlayer dielectric layer. The sacrificial gates and the sacrificial gate dielectric layers are removed to form an opening, wherein the interlayer dielectric layer is protected by the protective layer from recessing. A stacked gate structure is formed in the opening, wherein the protective layer is removed.

Abstract: A conductive assembly for changing a color of a lens is revealed herein to comprise first and second conductive devices separately disposed at an upper front and lower rear end faces of an electrochromic lens, and an electrical connection device connected with the first and second conductive devices. The first conductive device has a first indium tin oxide (ITO) conductive part on a surface of the electrochromic lens and a conductive part on the first ITO conductive part for connection to the electrical connection device. The second conductive device has a second indium tin oxide (ITO) conductive part on a surface of the electrochromic lens, an inner conductive part on the second ITO conductive part, an insulating part on the inner conductive part and an outer conductive part on the insulating part for connection to the inner conductive part and the electrical connection device.

Abstract: A random amorphous copolyester is synthesized by using diacid monomers and diol monomers. The random amorphous copolyester has a structure of the formula (I): wherein R1, R2 is an aromatic or aliphatic monomer, A is 0-0.8, B is 0-0.8, C is 0-1, D is 0-1, E is 0-0.8, F is 0-0.8, C+D<0.2 and A+B+E+F<0.8. The diacid monomer comprises TPA and an aromatic or aliphatic diacid monomer, the diol monomer comprises EG, 1,3 and 1,4-CHDM, and an aromatic or aliphatic diol monomer.

Abstract: A random amorphous copolyester is provided. The copolyester of the invention is synthesized by using diacid monomers and diol monomers. The random amorphous copolyester has a structure of the formula (I): wherein R1, R2 is an aromatic or aliphatic monomer, and wherein A, B, C, D, E and F are numbers of repeating units, A is 0-0.8, B is 0-0.8, C is 0-1, D is 0-1, E is 0-0.8, F is 0-0.8, C+D>0.2 and A+B+E+F<0.8. The diacid monomer comprises TPA and an aromatic or aliphatic diacid monomer, the diol monomer comprises EG, 1,3 and 1,4-CHDM, and an aromatic or aliphatic diol monomer.

Abstract: A shape-memory polymer foam is disclosed, which is formed by kneading a shape-memory copolyester with a polymeric material having a relatively lower crystallinity in a weight ratio of 15:85 to 85:15 and then conducting a foaming process. The shape-memory copolyester is a random copolymer formed from a dicarboxylic acid mixture and a diol in excess through esterfication and polycondensation. The dicarboxylic acid mixture includes 30-99 mol % of an aromatic dicarboxylic acid and 70-1 mol % of a straight aliphatic dicarboxylic acid of C4-C10. The diol includes a straight aliphatic diol of C2-C10.

Abstract: A fiber-optic tunable filter and an intensity modulator respectively includes: a fiber having a polished surface and an evanescent-field; and a photonic crystal having plural cavities and a filler filled therein and attached to the polished surface, wherein the plural cavities and the filler decide a photonic band-gap of the photonic crystal and the photonic band-gap is adjusted to reflect a light with a specific wavelength through the evanescent interaction with the photonic crystal material. Based on the fiber side-polishing technique, all kinds of fiber active and passive devices are able to be manufactured easily, especially for a high speed intensity modulator using an EO (Electro-Optic) polymer as the filler.

Abstract: A fiber-optic tunable filter and an intensity modulator respectively includes: a fiber having a polished surface and an evanescent-field; and a photonic crystal having plural cavities and a filler filled therein and attached to the polished surface, wherein the plural cavities and the filler decide a photonic band-gap of the photonic crystal and the photonic band-gap is adjusted to reflect a light with a specific wavelength through the evanescent interaction with the photonic crystal material. Based on the fiber side-polishing technique, all kinds of fiber active and passive devices are able to be manufactured easily, especially for a high speed intensity modulator using an EO (Electro-Optic) polymer as the filler.