Patents by Inventor Fu-Yuan (Max) Hsu

Fu-Yuan (Max) Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ping-Pong Type Battery Management system
    Publication number: 20130134784
    Abstract: Disclosed is an Ping-Pong Type Battery Management system. The Ping-Pong Type Battery Management system includes first and second battery packs, first and second battery switches, a sensing and controlling module, a supply power regulation module and a load power regulation module. The first battery switch is formed on the first battery pack. The second battery switch is formed on the second battery pack. The sensing and controlling module is connected to the first and second battery packs and the first and second battery switches. The supply power regulation module is connected to the first and second battery switches. The load power regulation module is connected to the first and second battery switches.
    Type: Application
    Filed: November 28, 2011
    Publication date: May 30, 2013
    Applicant: Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense
    Inventors: Lan-Rong Dung, Chau-Chung Song, Fa-Hwa Shieh, Shiang-Fu Yuan, Chan-Chia Yeh, Chee-Chang Chen
  • Magnet holding structure of auto-focus module
    Patent number: 8451543
    Abstract: A magnet holding structure of auto-focus module includes an outer frame for holding four magnets to four inner wall surfaces of the outer frame; a lens holder for holding a lens thereto and being assembled to the outer frame via at least one spring member; and a winding fitted around the lens holder for driving the lens holder to axially move forward or rearward to focus automatically. The outer frame is provided at each of four inner corners with an inverted L-shaped plate extending downward from a top of the outer frame to locate between the lens holder and the winding, so as to face toward four spaces respectively existing between two adjacent magnets outside the winding. With these arrangements, the electromagnetic field produced by the winding can have enhanced magnetic efficiency and increased driving force at the corners of the winding to achieve the purpose of power saving.
    Type: Grant
    Filed: November 12, 2010
    Date of Patent: May 28, 2013
    Assignee: TDK Taiwan Corporation
    Inventors: Fu-Yuan Wu, Shang-Yu Hsu
  • Control method, circuit, and electronic system utilizing the same
    Patent number: 8446361
    Abstract: A control circuit for a touch panel including a capacitor module coupled to a node. The control circuit includes a power supply, a discharging unit, and a compared unit. The power supply provides a voltage to the node. The discharging unit discharges the node. The compared unit generates an output signal according to the voltage of the node.
    Type: Grant
    Filed: February 19, 2009
    Date of Patent: May 21, 2013
    Assignee: Chimei Innolux Corporation
    Inventors: Fu-Yuan Hsueh, I-Lin Wu
  • TRENCH MOSFET WITH SPLIT TRENCHED GATE STRUCTURES IN CELL CORNERS FOR GATE CHARGE REDUCTION
    Publication number: 20130113038
    Abstract: A trench MOSFET with closed cells having split trenched gates structure in trenched gates intersection area in cell corner is disclosed. The invented split trenched gates structure comprises an insulation layer between said split trenched gates with thick thermal oxide layer in center portion of the trenched gates intersection area, therefore further reducing Qgd of the trench MOSFET without increasing additional Rds.
    Type: Application
    Filed: November 8, 2011
    Publication date: May 9, 2013
    Applicant: FEEI CHERNG ENTERPRISE CO., LTD.
    Inventor: Fu-Yuan HSIEH
  • Integrated trench MOSFET with trench Schottky rectifier
    Patent number: 8426913
    Abstract: An integrated circuit comprising trench MOSFET having trenched source-body contacts and trench Schottky rectifier having trenched anode contacts is disclosed. By employing the trenched contacts in trench MOSFET and trench Schottky rectifier, the integrated circuit is able to be shrunk to achieve low specific on-resistance for trench MOSFET, and low Vf and reverse leakage current for trench Schottky Rectifier.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: April 23, 2013
    Assignee: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • A SEMICONDUCTOR POWER DEVICE INTEGRATRED WITH IMPROVED GATE SOURCE ESD CLAMP DIODES
    Publication number: 20130092976
    Abstract: A trench semiconductor power device integrated with four types of ESD clamp diodes for optimization of total perimeter of the ESD clamp diodes, wherein the ESD clamp diodes comprise multiple back to back Zener diodes with alternating doped regions of a first conductivity type next to a second conductivity type, wherein each of the doped regions has a closed ring structure.
    Type: Application
    Filed: October 17, 2011
    Publication date: April 18, 2013
    Applicant: FORCE MOS TECHNOLOGY CO., LTD.
    Inventor: Fu-Yuan HSIEH
  • Light emitting diode driving apparatus
    Patent number: 8421721
    Abstract: A light emitting diode (LED) driving apparatus is provided, which includes a power conversion circuit for receiving and converting an input power so as to generate a DC voltage to simultaneously drive a plurality of LED strings arranged in parallel; and a plurality of current regulation chips each having a single regulation channel and respectively corresponding to the LED strings, wherein an ith current regulation chip is only used for regulating a current flowing through an ith LED string, where i is a positive integer.
    Type: Grant
    Filed: December 6, 2010
    Date of Patent: April 16, 2013
    Assignee: Power Forest Technology Corporation
    Inventors: Fu-Yuan Shih, Yang-Tai Tseng
  • SEMICONDUCTOR POWER DEVICES INTEGRATED WITH A TRENCHED CLAMP DIODE
    Publication number: 20130075810
    Abstract: A semiconductor power device having shielded gate structure integrated with a trenched clamp diode formed in a semiconductor silicon layer, wherein the shielded gate structure comprises a shielded electrode formed by a first poly-silicon layer and a gate electrode formed by a second poly-silicon layer. The trenched clamp diode is formed by the first poly-silicon layer. A shielded gate mask used to define the shielded gate is also used to define the trenched clamp diode. Therefore, one poly-silicon layer and a mask for the trenched clamp diode are saved.
    Type: Application
    Filed: September 27, 2011
    Publication date: March 28, 2013
    Applicant: FORCE MOS TECHNOLOGY CO., LTD.
    Inventor: Fu-Yuan HSIEH
  • SEMICONDUCTOR POWER DEVICE WITH EMBEDDED DIODES AND RESISTORS USING REDUCED MASK PROCESSES
    Publication number: 20130075809
    Abstract: A trench semiconductor power device integrated with a Gate-Source and a Gate-Drain clamp diodes without using source mask is disclosed, wherein a plurality source regions of a first conductivity type of the trench semiconductor device and multiple doped regions of the first conductivity type of the clamp diodes are formed simultaneously through contact open areas defined by a contact mask.
    Type: Application
    Filed: September 27, 2011
    Publication date: March 28, 2013
    Applicant: FORCE MOS TECHNOLOGY CO. LTD.
    Inventor: Fu-Yuan HSIEH
  • Electromagnetic lens driving device
    Patent number: 8390946
    Abstract: An electromagnetic lens driving device includes a casing, a lens module, a positioning structure, and an electromagnetic driving module. The lens module is provided in a receiving space defined in the casing. The positioning structure, which is connected between the lens module and the casing, is configured to limit the lens module within the receiving space and generate a frictional force. The electromagnetic driving module is provided in the receiving space and corresponds in position to the lens module. When supplied with electricity, the electromagnetic driving module generates a magnetic force that drives the lens module to move along a central axis. Once the electricity is cut off, the lens module is fixed in position and prevented from moving freely by the frictional force of the positioning structure; hence, the electromagnetic lens driving features economical use of electricity.
    Type: Grant
    Filed: October 25, 2010
    Date of Patent: March 5, 2013
    Assignee: TOK Taiwan Corp.
    Inventors: Chao Chang Hu, Fu Yuan Wu, Shih Ting Huang
  • Image display system and gate driver circuit
    Patent number: 8390611
    Abstract: An image display system includes a gate driving circuit. The gate driving circuit includes several stages of gate drivers each for generating a gate driving signal to drive a row of pixels. Each stage of the gate driver receives a clock signal and a first reset signal. A first stage of the gate driver receives a vertical start pulse as an input signal of the first stage. The remaining stages of the gate drivers respectively receive the gate driving signal generated by a previous stage of the gate driver as the input signal of the remaining stages. Each stage of the gate drivers further receives the gate driving signal generated by a next stage of the gate driver as a second reset signal, and generates the corresponding gate driving signal according to the clock signal, the first reset signal, and the corresponding input signal and second reset signal.
    Type: Grant
    Filed: August 16, 2010
    Date of Patent: March 5, 2013
    Assignee: Chimei Innolux Corporation
    Inventors: Fu-Yuan Hsueh, Tzu-Yu Cheng
  • METHOD AND STRUCTURE FOR SUPPRESSING RESONANCE IN AN ANTI-SHAKE LENS FOCUSING MODULE
    Publication number: 20130050515
    Abstract: A method and a structure for suppressing resonance in an anti-shake lens focusing module are disclosed. The resonance suppressing method includes the steps of providing a lens focusing structure having a first movable part and a first immovable part; providing an anti-shake structure having a second movable part and a second immovable part; providing at least one shock-absorbing material between the first movable and immovable parts as well as between the second movable and immovable parts; and using the shock-absorbing material to absorb any vibration caused by movements of the first and the second movable part, so as to suppress any resonance possibly generated due to the movements of the first and the second movable part.
    Type: Application
    Filed: August 23, 2011
    Publication date: February 28, 2013
    Inventors: Fu-Yuan WU, Ming-Hang Huang, Ying-Chien Hsueh, Kun-I Lee
  • Power semiconductor device comprising a plurality of trench IGBTs
    Patent number: 8384194
    Abstract: A power semiconductor device with improved avalanche capability structures is disclosed. By forming at least an avalanche capability enhancement doped regions with opposite conductivity type to epitaxial layer underneath an ohmic contact doped region which surrounds at least bottom of trenched contact filled with metal plug between two adjacent gate trenches, avalanche current is enhanced with the disclosed structures.
    Type: Grant
    Filed: August 14, 2012
    Date of Patent: February 26, 2013
    Assignee: Force MOS Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Trench MOSFET with body region having concave-arc shape
    Patent number: 8378392
    Abstract: A trench Metal Oxide Semiconductor Field Effect Transistor with improved body region structures is disclosed. By forming the inventive body region structures with concave-arc shape with respect to epitaxial layer, a wider interfaced area between the body region and the epitaxial layer is achieved, thus increasing capacitance between drain and source Cds. Moreover, the invention further comprises a Cds enhancement doped region interfaced with said body region having higher doping concentration than the epitaxial layer to further enhancing Cds without significantly impact breakdown voltage.
    Type: Grant
    Filed: April 7, 2010
    Date of Patent: February 19, 2013
    Assignee: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Anti-shake structure for auto-focus modular
    Patent number: 8380057
    Abstract: An anti-shake structure for auto-focus module includes an auto-focus module for driving a lens to move forward and rearward in a light incident path, i.e. in z-axis direction, so that the lens focuses light on an image sensor; a frame for holding the auto-focus module therein; a lens suspender with a compensation lens arranged thereon being connected to a plurality of suspension wires while the latter are connected at respective another end to the top cover plate of the frame, so that the compensation lens is correspondingly suspended in the frame in the light incident path and located behind the lens; and a shake compensation driving unit for driving the lens suspender to move horizontally along x-axis or y-axis direction, so as to compensate any image shift caused by hand shaking.
    Type: Grant
    Filed: May 14, 2012
    Date of Patent: February 19, 2013
    Assignee: TDK Taiwan Corporation
    Inventors: Fu-Yuan Wu, Chao-Chang Hu, Yi-Liang Chan
  • Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
    Patent number: 8378411
    Abstract: A structure of power semiconductor device integrated with clamp diodes having separated gate metal pads is disclosed. The separated gate metal pads are wire bonded together on the gate lead frame. This improved structure can prevent the degradation of breakdown voltage due to electric field in termination region blocked by polysilicon or gate metal.
    Type: Grant
    Filed: March 24, 2011
    Date of Patent: February 19, 2013
    Assignee: Force Mos Technology., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Method for manufacturing a super-junction trench MOSFET with resurf stepped oxides and trenched contacts
    Patent number: 8372717
    Abstract: A method of manufacturing a super junction semiconductor device having resurf stepped oxide structure is disclosed by providing semiconductor silicon layer having trenches and mesas. A plurality of first doped column regions of a second conductivity type in parallel surrounded with second doped column regions of a first conductivity type adjacent to sidewalls of the trenches are formed by angle ion implantations into a plurality of mesas through opening regions in a block layer covering both the mesas and a termination area.
    Type: Grant
    Filed: November 18, 2011
    Date of Patent: February 12, 2013
    Assignee: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Super-junction trench MOSFET with Resurf stepped oxides and split gate electrodes
    Patent number: 8373225
    Abstract: A super-junction trench MOSFET with Resurf Stepped Oxide and split gate electrodes is disclosed. The inventive structure can apply additional freedom for better optimization of device performance and manufacturing capability by tuning thick oxide thickness to minimize influence of charge imbalance, trapped charges, etc. Furthermore, the fabrication method can be implemented more reliably with lower cost.
    Type: Grant
    Filed: November 23, 2011
    Date of Patent: February 12, 2013
    Assignee: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Super-junction trench MOSFET with resurf stepped oxides and trenched contacts
    Patent number: 8373224
    Abstract: A super-junction trench MOSFET with Resurf Stepped Oxide and trenched contacts is disclosed. The inventive structure can apply additional freedom for better optimization and manufacturing capability by tuning thick oxide thickness to minimize influence of charge imbalance, trapped charges, etc. . . . Furthermore, the fabrication method can be implemented more reliably with lower cost.
    Type: Grant
    Filed: November 8, 2011
    Date of Patent: February 12, 2013
    Assignee: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Communication device
    Patent number: D675180
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: January 29, 2013
    Assignee: Motorola Mobility LLC
    Inventors: Wei Zhang, Ruben D Castano, Fu-Yuan Hsu