Patents by Inventor Fu-Yuan (Max) Hsu

Fu-Yuan (Max) Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TRENCH MOSFET WITH ULTRA HIGH CELL DENSITY AND MANUFACTURE THEREOF
    Publication number: 20120196416
    Abstract: A trench MOSFET structure with ultra high cell density is disclosed, wherein the source regions and the body regions are located in different regions to save the mesa area between every two adjacent gate trenches in the active area. Furthermore, the inventive trench MOSFET is composed of stripe cells to further increase cell packing density and decrease on resistance Rds between the drain region and the source region.
    Type: Application
    Filed: April 9, 2012
    Publication date: August 2, 2012
    Applicant: FORCE MOS TECHNOLOGY CO., LTD.
    Inventor: Fu-Yuan HSIEH
  • SUPER-JUNCTION TRENCH MOSFET WITH MULTIPLE TRENCHED SOURCE-BODY CONTACTS
    Publication number: 20120187477
    Abstract: A super-junction trench MOSFET with split gate electrodes is disclosed for high voltage device by applying multiple trenched source-body contacts with narrow CDs in unit cell.
    Type: Application
    Filed: March 29, 2012
    Publication date: July 26, 2012
    Applicant: FORCE MOS TECHNOLOGIES CO., LTD.
    Inventor: Fu-Yuan HSIEH
  • Handheld electronic apparatus and method thereof
    Patent number: 8223071
    Abstract: A handheld electronic apparatus includes a positioning module, a sensing module, a constellation database, and a processing module. The positioning module generates location information associated with the handheld electronic apparatus according to a satellite signal received by the handheld electronic apparatus. The sensing module detects a vertical tilted angle and a horizontal observing direction associated with a positioned state of the handheld electronic apparatus. The processing module retrieves corresponding real-time constellation information from constellation data stored in the constellation database according to timing information, the location information, the vertical tilted angle, and the horizontal observing direction.
    Type: Grant
    Filed: June 10, 2009
    Date of Patent: July 17, 2012
    Assignee: MStar Semiconductor, Inc.
    Inventors: Meng-Shu Lee, Wen Hung Chung, Fu-Yuan Cheng
  • Method of making a trench MOSFET having improved avalanche capability using three masks process
    Patent number: 8222108
    Abstract: A method of forming trench MOSFET structure having improved avalanche capability is disclosed. In a preferred embodiment according to the present invention, only three masks are needed in the fabricating process, wherein the source region is formed by performing source Ion Implantation through contact open region of a thick contact interlayer for saving source mask. Furthermore, said source region has a doping concentration along channel region lower than along contact trench region, and source junction depth along channel region shallower than along contact trench, and source doping profile along surface of epitaxial layer has Guassian-distribution from trenched source -body contact to channel region.
    Type: Grant
    Filed: July 8, 2009
    Date of Patent: July 17, 2012
    Assignee: Force MOS Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • SEMICONDUCTOR DEVICES WITH GATE-SOURCE ESD DIODE AND GATE-DRAIN CLAMP DIODE
    Publication number: 20120175737
    Abstract: A semiconductor power device integrated with a Gate-Source ESD diode for providing an electrostatic discharge (ESD) protection and a Gate-Drain clamp diode for drain-source avalanche protection. The semiconductor power device further includes a Nitride layer underneath the diodes and a thick oxide layer as an etching stopper layer for protecting a thin oxide layer on top surface of body region from over-etching.
    Type: Application
    Filed: March 9, 2012
    Publication date: July 12, 2012
    Applicant: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan HSIEH
  • TRENCH MOSFET WITH SUPER PINCH-OFF REGIONS AND SELF-ALIGNED TRENCHED CONTACT
    Publication number: 20120175699
    Abstract: A power semiconductor device having a self-aligned structure and super pinch-off regions is disclosed. The on-resistance is reduced by forming a short channel without having punch-through issue. The on-resistance is further reduced by forming an on-resistance reduction implanted drift region between adjacent shield electrodes, having doping concentration heavier than epitaxial layer without degrading breakdown voltage with a thick oxide on bottom and sidewalls of the shield electrode. Furthermore, the present invention enhance the switching speed comparing to the prior art.
    Type: Application
    Filed: January 6, 2011
    Publication date: July 12, 2012
    Applicant: FORCE MOS TECHNOLOGY CO., LTD.
    Inventor: Fu-Yuan HSIEH
  • TRENCH MOS RECTIFIER
    Publication number: 20120175700
    Abstract: A semiconductor device comprising trench MOSFET as MOS rectifier is disclosed. For ESD capability enhancement and reverse recovery charge reduction, a built-in resistor in the semiconductor device is introduced according to the present invention between gate and source. The built-in resistor is formed by a doped poly-silicon layer filled into multiple trenches.
    Type: Application
    Filed: January 6, 2011
    Publication date: July 12, 2012
    Applicant: FORCE MOS TECHNOLOGY CO., LTD.
    Inventor: Fu-Yuan HSIEH
  • Semiconductor devices with gate-source ESD diode and gate-drain clamp diode
    Patent number: 8217422
    Abstract: A semiconductor power device integrated with a Gate-Source ESD diode for providing an electrostatic discharge (ESD) protection and a Gate-Drain clamp diode for drain-source avalanche protection. The semiconductor power device further includes a Nitride layer underneath the diodes and a thick oxide layer as an etching stopper layer for protecting a thin oxide layer on top surface of body region from over-etching.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: July 10, 2012
    Assignee: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Driving method for photo transistor by supplying an alternate current voltage to a gate electrode and photo sensor and flat panel display using the same
    Patent number: 8212199
    Abstract: A driving method for a photo transistor includes providing an alternating current (AC) voltage to a gate electrode of the photo transistor. A photo sensor using the driving method and a flat panel display using the photo sensor are also provided.
    Type: Grant
    Filed: April 20, 2009
    Date of Patent: July 3, 2012
    Assignee: Chimei Innolux Corporation
    Inventor: Fu-Yuan Hsu
  • FAST SWITCHING LATERAL INSULATED GATE BIPOLAR TRANSISTOR (LIGBT) WITH TRENCHED CONTACTS
    Publication number: 20120161201
    Abstract: A lateral insulated gate bipolar transistor (LIGBT) includes a drain-anode adjoining trenched contact penetrating through an insulating layer and extending into an epitaxial layer, directly contacting to a drain region and an anode region, and the drain region vertically contacting to the anode region along sidewall of the drain-anode adjoining trenched contact. The LIGBT further comprises a breakdown voltage enhancement doping region wrapping around the anode region. The LIGBTs in accordance with the invention offer the advantages of high breakdown voltage and low on-resistance as well as high switching speed.
    Type: Application
    Filed: December 23, 2010
    Publication date: June 28, 2012
    Applicant: FORCE MOS TECHNOLOGY CO., LTD.
    Inventor: Fu-Yuan HSIEH
  • DISPLAY PANEL
    Publication number: 20120162278
    Abstract: An exemplary display panel includes a plurality of monochrome pixels, a plurality of data lines and a plurality of control lines. Each monochrome pixel provides a specific color on the display panel. The data lines are electrically coupled to the monochrome pixels for providing the display data. The data lines includes a first data line electrically coupled to a part of the monochrome pixels, and the specific colors provided by the part of the monochrome pixels are of the same color. Besides, each of the control lines is electrically coupled to a part of the monochrome pixels for controlling the part of the monochrome pixels electrically coupled thereto whether to receive the display data from the data lines.
    Type: Application
    Filed: August 26, 2011
    Publication date: June 28, 2012
    Applicant: AU OPTRONICS CORP.
    Inventors: Hsiang-Yuan Cheng, Shih-Hsun Lo, Shan-Fu Yuan, Chen-Lun Chiu, Yu-Wei Liao, Chia-Yang Cheng
  • Foreign object detecting apparatus in a bill passageway
    Patent number: 8203448
    Abstract: A foreign object detecting apparatus in bill passageway includes a laser light source, a first light detector and a second light detector. The laser light source is arranged in a first lateral side to emit a coherent laser beam toward a second lateral side. The first light detector is arranged in the second lateral side to receive the coherent laser beam and to measure the intensity of the coherent laser beam. The second light detector is arranged in one of a top side and a bottom side, wherein when a foreign object is presence in the bill passageway, the intensity of the coherent laser beam received by the first light detector is decreased by the blocking of the foreign object, and at least a portion of the coherent laser beam which is reflected, refracted, diffracted or scattered by the foreign object is received by the second light detector.
    Type: Grant
    Filed: June 9, 2009
    Date of Patent: June 19, 2012
    Assignee: International Currency Technologies Corp.
    Inventors: Tien-Yuan Chien, Cheng-Kang Yu, Fu-Yuan Chang
  • Sensing circuit discharge control method and device for touch panel
    Patent number: 8194050
    Abstract: A sensing circuit discharge control method and device for a touch panel are disclosed. A discharging duration of a current source in the sensing circuit of the touch panel is fine tuned in a digital control manner, so as to control the discharging amount of the sensing circuit without frequently adjusting the discharging current of the current source. By using the present invention, discharging time difference between a condition in which a touch event occurs and a condition in which no touch event occurs for each sensing circuit can approach the same.
    Type: Grant
    Filed: September 16, 2009
    Date of Patent: June 5, 2012
    Assignee: Chimei Innolux Corporation
    Inventors: Kai-Chieh Yang, Fu-Yuan Hsueh, I-Lin Wu
  • Multi-cavity injection molding method for fabricating solar lenses
    Patent number: 8182723
    Abstract: The present invention discloses a multi-cavity injection molding method for fabricating solar lenses, which comprises steps: providing a mold set including a female mold and a male mold corresponding to the female mold, wherein the female mold has a receiving recess, and wherein the male mold has several lens cavities each having a lens pattern and connected with a cold runner; placing a glass substrate inside the receiving recess; injecting a silica gel to all the lens cavities via the cold runners; and heating the mold set to cure the silica gel, whereby to form several silica-gel lenses on the glass substrate in a single fabrication process. The present invention can effectively shorten the fabrication time and increase lens alignment.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: May 22, 2012
    Assignee: Advanced Green Energy Tech. Corp.
    Inventors: Fu-Yuan Wu, Wen-Hsiung Tsou
  • DRIVING METHOD OF HALF-SOURCE-DRIVING (HSD) DISPLAY DEVICE
    Publication number: 20120120117
    Abstract: A HSD display device is adapted to receive data from a signal source and includes multiple pixel sets. Each pixel sets includes first pixel and second pixel. The first pixel is electrically coupled to a first data line and a first gate line. The second pixel is electrically coupled to the first pixel and a second gate line. The first gate line and the second gate line respectively are for controlling the first pixel and the second pixel whether to receive the data. In a driving method of the HSD display device, a common voltage is provided to the first and second pixels, and the common voltage is modulated to have two different voltage levels at a same side of a data central voltage. The data central voltage is an average of data voltages with different polarities from the signal source for displaying a same gray level.
    Type: Application
    Filed: May 5, 2011
    Publication date: May 17, 2012
    Applicant: AU OPTRONICS CORP.
    Inventors: Shu-Huan HSIEH, Fu-Yuan Liou, Chung-Lung Li
  • MAGNET HOLDING STRUCTURE OF AUTO-FOCUS MODULE
    Publication number: 20120120510
    Abstract: A magnet holding structure of auto-focus module includes an outer frame for holding four magnets to four inner wall surfaces of the outer frame; a lens holder for holding a lens thereto and being assembled to the outer frame via at least one spring member; and a winding fitted around the lens holder for driving the lens holder to axially move forward or rearward to focus automatically. The outer frame is provided at each of four inner corners with an inverted L-shaped plate extending downward from a top of the outer frame to locate between the lens holder and the winding, so as to face toward four spaces respectively existing between two adjacent magnets outside the winding. With these arrangements, the electromagnetic field produced by the winding can have enhanced magnetic efficiency and increased driving force at the corners of the winding to achieve the purpose of power saving.
    Type: Application
    Filed: November 12, 2010
    Publication date: May 17, 2012
    Inventors: Fu-Yuan WU, Shang-Yu Hsu
  • Trench MOSFET with ultra high cell density and manufacture thereof
    Patent number: 8178922
    Abstract: A trench MOSFET structure with ultra high cell density is disclosed, wherein the source regions and the body regions are located in different regions to save the mesa area between every two adjacent gate trenches in the active area. Furthermore, the inventive trench MOSFET is composed of stripe cells to further increase cell packing density and decrease on resistance Rds between the drain region and the source region.
    Type: Grant
    Filed: January 14, 2010
    Date of Patent: May 15, 2012
    Assignee: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Circuit and method for controlling light emitting device, and integrated circuit therefor
    Patent number: 8179059
    Abstract: The present invention discloses a circuit and a method for controlling a light emitting device, and an integrated circuit therefore. The circuit for controlling a light emitting device comprises: a power stage controller circuit controlling a power stage circuit to convert an input voltage to an output voltage, which is supplied to at least one light emitting device channel including at least one light emitting device; a transistor switch in the light emitting device channel; and a current source circuit controlling a current through the light emitting device channel, wherein the power stage controller circuit and the current source circuit are integrated in an integrated circuit which provides a control voltage to control a gate of the transistor switch.
    Type: Grant
    Filed: October 15, 2009
    Date of Patent: May 15, 2012
    Assignee: Richtek Technology Corporation, R.O.C.
    Inventors: Chih-Hao Yang, Fu-Yuan Shih, An-Tung Chen, Shui-Mu Lin
  • Communication device
    Patent number: D659665
    Type: Grant
    Filed: May 18, 2011
    Date of Patent: May 15, 2012
    Assignee: Motorola Mobility, Inc.
    Inventors: Wei Zhang, Yu-Yin Cheng, Fu-Yuan Hsu, Vincent Kenya Shyu
  • Communication device
    Patent number: D663712
    Type: Grant
    Filed: November 8, 2011
    Date of Patent: July 17, 2012
    Assignee: Motorola Mobility, Inc.
    Inventors: Wei-Wei Chen, Ruben D Castano, Fu-Yuan Hsu, Sang-Kyu Maeng, Lei Xia