Abstract: Provided are a phase change memory device and a reading method thereof. An example embodiment of a phase change memory device may include main cells programmed to have any one of a plurality of resistance states respectively corresponding to multi-bit data, reference cells programmed to have at least two respectively different resistance states among the resistance states each time the main cells are programmed, and a reference voltage generation circuit sensing the reference cells to generate reference voltages for identifying each of the resistance states.

Abstract: A phase change memory device includes wordlines extending along a direction on a semiconductor substrate. Low concentration semiconductor patterns are disposed on the wordlines. Node electrodes are disposed on the low concentration semiconductor patterns. Schottky diodes are disposed between the low concentration semiconductor patterns and the node electrodes. Phase change resistors are disposed on the node electrodes.

Abstract: A multi-bit phase change memory device including a phase change material having a plurality of crystalline phases. A non-volatile multi-bit phase change memory device may include a phase change material in a storage node, wherein the phase change material includes a binary or ternary compound sequentially having at least three crystalline phases having different resistance values according to an increase of temperature of the phase change material.

Abstract: A policy change management scheme for network resource management through dynamic policy adaptations especially suitable for DiffServ-enabled MPLS networks is presented. The scheme incorporates automated resource adaptation capabilities to assure QoS for user traffic and to promote resource utilization in DiffServ-enabled MPLS networks. A suite of resource management policies, an ordered set of methods for adjusting policies, and interfaces to a companion policy-based network management system are provided. The policies are periodically adjusted based on predictive bandwidth estimation algorithms ensuring optimal resource allocation to individual service classes and enabling adjustment of resources for handling current traffic and traffic expected for the near future.

Abstract: A method and apparatus for sensing a grip on a mobile terminal are provided, in which the mobile terminal is switched to a manner mode, when grip sensors on both side surfaces of the mobile terminal are touched simultaneously, upon receipt incoming call, the call is started, if a vicinity sensor senses the user's face nearby in the manner mode, and the call is ended, if the vicinity sensor senses that the user's face is receding from the mobile terminal.

Abstract: Non-volatile memory devices include an array of phase-changeable memory cells, which have first phase-changeable material patterns therein, and at least one phase-changeable fuse element. This phase-changeable fuse element includes a second phase-changeable material pattern therein with a higher crystallization temperature relative to the first phase-changeable material patterns in the array of phase-changeable memory cells. This higher crystallization temperature may be greater than about 300° C. According to additional embodiments of the present invention, the at least one phase-changeable fuse element includes a composite of the second phase-changeable material pattern and a third phase-changeable material pattern, which is formed of the same material at the first phase-changeable material patterns.

Abstract: Systems and methods for efficiently provisioning and assuring Quality of Service (QoS) between user networks communicating over a DiffServ-enabled network, with QoS management transparency to SIP user agents. The system comprises user networks communicating via a core network, each user network having a source and destination SIP user agent respectively, a SIP proxy server between the source SIP user agent and destination SIP user agent, a Bandwidth Manager to provision a pipe between the source user network and the destination user network, wherein the pipe has a specified bandwidth, and a QoS Agent for accepting and/or rejecting a SIP session based on availability of bandwidth in the pipe; wherein the SIP proxy server is configured to forward an incoming SIP request to the QoS Agent. The method comprises provisioning a pipe between the SIP user agents or their respective user networks, and allowing/rejecting incoming SIP sessions based on the available bandwidth in the pipe.

Abstract: In a secure network where the network characteristics are not known, a call admission control algorithm and a preemption control algorithm based on a destination node informing the source node of the observed carried traffic are used to regulate the amount of traffic that needs to be preempted by the source. The amount of traffic that needs to be preempted is based on the carried traffic measured at the destination node. The traffic to be preempted is based on the priority of the traffic, where the lowest priority traffic is the first to be preempted until the amount of traffic preempted is sufficient to allow the remaining traffic to pass through the network without congestion.

Abstract: A number of read cycles applied to a selected memory location of a memory device, such as a variable-resistance memory device, is monitored. Write data to be written to the selected memory location is received. Selective pre-write verifying and writing of the received write data to the selected memory location occurs based on the monitored number of read cycles.

Abstract: In a method of forming a phase-change memory unit, a conductive layer is formed on a substrate having a trench. The conductive layer is planarized until the substrate is exposed to form a first electrode. A spacer partially covering the first electrode is formed. A phase-change material layer is formed on the first electrode and the second spacer. A second electrode is formed on the phase-change material layer. Reset/set currents of the phase-change memory unit may be reduced and deterioration of the phase-change material layer may be reduced and/or prevented.

Abstract: Provided is a resistive memory device that can be integrated with a high integration density and method of forming the same. An insulating layer enclosing a resistive memory element and an insulating layer enclosing a conductive line connected with the resistive memory element have different stresses, hardness, porosity degrees, dielectric constant or heat conductivities.

Abstract: A phase change memory device and a write method thereof allow writing of both volatile and non-volatile data on the phase change memory device. The phase change memory device may be written by setting a write mode as one of a volatile write mode and a non-volatile write mode, and writing data as volatile or non-volatile by applying a write pulse corresponding to the write mode, wherein, when power is not supplied to the phase change memory device, the non-volatile data is retained and the volatile data is not retained.

Abstract: Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.

Abstract: There is provided a mobile apparatus including: a thin film provided as a substrate; at least one conductive pattern formed on at least one surface of the thin film; a circuit part formed on the at least one surface of the thin film to connect to the connect to the conductive pattern; and a housing formed integral with the thin film. Also, there is provided a method of manufacturing the same.

Abstract: A phase change memory device includes wordlines extending along a direction on a semiconductor substrate. Low concentration semiconductor patterns are disposed on the wordlines. Node electrodes are disposed on the low concentration semiconductor patterns. Schottky diodes are disposed between the low concentration semiconductor patterns and the node electrodes. Phase change resistors are disposed on the node electrodes.

Abstract: Provided are a phase change memory device and a reading method thereof. An example embodiment of a phase change memory device may include main cells programmed to have any one of a plurality of resistance states respectively corresponding to multi-bit data, reference cells programmed to have at least two respectively different resistance states among the resistance states each time the main cells are programmed, and a reference voltage generation circuit sensing the reference cells to generate reference voltages for identifying each of the resistance states.

Abstract: A memory device comprises a plurality of memory cells, each memory cell comprising a memory cell material that has an initial resistance that is determined in response to an applied programming current in a programming operation, the resistance of the memory cell varying from the initial resistance over a time period following the programming operation, and each memory cell being connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a read operation. A modification circuit modifies the resistance of a memory cell of the plurality of memory cells selected for a read operation to return its resistance to near the initial resistance prior to a read operation of the memory cell.

Abstract: A policy change management scheme for network resource management through dynamic policy adaptations especially suitable for DiffServ-enabled MPLS networks is presented. The scheme incorporates automated resource adaptation capabilities to assure QoS for user traffic and to promote resource utilization in DiffServ-enabled MPLS networks. A suite of resource management policies, an ordered set of methods for adjusting policies, and interfaces to a companion policy-based network management system are provided. The policies are periodically adjusted based on predictive bandwidth estimation algorithms ensuring optimal resource allocation to individual service classes and enabling adjustment of resources for handling current traffic and traffic expected for the near future.

Abstract: Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.

Abstract: An etching apparatus using a neutral beam includes an electron emission unit to convert an ion beam, extracted from plasma by a plurality of grids, into a neutral beam by colliding the ion beam with electrons to prevent the ion beam from physically colliding with the electron emission unit, thus preventing the damage to a neutralization unit and generation of foreign substances with a simple structure. Further, the etching apparatus converts the ion beam into the neutral beam at a high neutralizing efficiency without causing directionality and energy losses, and generates a neutral beam having a large area, thus uniformly etching a semiconductor wafer.