Abstract: Methods, systems, and devices for sacrificial block pool are described. For instance, a memory device may allocate a first pool of blocks and a second pool of blocks. The first pool of blocks may be associated with access operations in which each memory cell stores a single bit and the second pool of blocks may be associated with operations where each memory cell stores a single bit or multiple bits. The memory device may perform access operations according to the allocation, where for the access operations a first wear-leveling criteria is applied to a first subset of the second pool of blocks and a second wear-leveling criteria is applied to a second subset of the second pool of blocks. The memory device may move a block of the second subset to the first pool of blocks based on an amount of access operations associated with the block satisfying a threshold.

Abstract: Methods, systems, and devices for memory operations are described. Data for a set of commands associated with a barrier command may be written to a buffer. Based on a portion of the data to be flushed from the buffer, a determination may be made as to whether to update an indication of a last barrier command for which all of the associated data has been written to a memory device. Based on whether the indication of the last barrier command is updated, a flushing operation may be performed that transfers the portion of the data from the buffer to a memory device. During a recovery operation, the portion of the data stored in the memory device may be validated based on determining that the barrier command is associated with the portion of the data and on updating the indication of the last barrier command to indicate the barrier command.

Abstract: Methods, systems, and devices for techniques for data programming are described for programming data to a memory system using a second programming mode associated with a higher error rate than a first programming mode. The second programming mode may include skipping one or more voltage calibration procedures included in the first programming mode, as well as performing one or more data verification procedures once a larger set of the data is programmed. The second programming mode may also include using a higher programming voltage pulse to program data and the programming pulse may last for a longer period of time than a programming pulse for the first programming mode. A memory system may receive data, determine to write the data to a memory device using the second programming mode, write the data using the second programming mode, and verify whether the data satisfies an error threshold.

Abstract: Methods, systems, techniques, and devices for smart factory reset procedures are described. In accordance with examples as disclosed herein, a memory system may receive one or more commands associated with a reset procedure. The memory system may identify, in response to the one or more commands, a first portion of one or more memory arrays of the memory system as storing user data and a second portion of the one or more memory arrays as storing data associated with an operating system. The memory system may update a mapping of the memory system based on identifying the first portion and the second portion. The memory system may transfer the data associated with the operating system to a third portion of the one or more memory arrays and perform an erase operation on a subset of physical addresses of the set of physical addresses.

Abstract: Methods, systems, and devices for dynamic superblocks are described. In some examples, a superblock may be established across one or more dice of a memory device. A superblock may include one or more blocks from a plurality of planes of a memory die, and may be associated with a first performance cursor or a second performance cursor. The superblock may be established based on one or more criteria, such as a quantity of available blocks in a plane, a quantity of access operations performed on one or more blocks in a plane, or other criteria. Establishing a superblock associated with a first performance cursor may allow for performance criteria established by a host device to be maintained, while establishing a superblock associated with a second performance cursor may allow for garbage collection, wear leveling, and other maintenance operations to be performed on the memory device.

Abstract: Methods, systems, and devices for page validity table colors for garbage collection are described. The memory system may obtain validity information and information associated with a characteristic for each page of a block of data and based on initiating a reorganization procedure on the block of data of the memory system. The memory system may move, for the reorganization procedure, a first set of pages of the block of data associated with a first value of the characteristic to a first portion of the memory system according to the validity information for the first set of pages. The memory system may move, for the reorganization procedure, a second set of pages of the block of data associated with a second value of the characteristic to a second portion of the memory system according to the validity information for the second set of pages.

Abstract: Methods, systems, and devices for a memory access gate are described. A memory device may include a controller, memory dice, and a pad for receiving an externally provided control signal, such as a chip enable signal. The memory device may include a switching component for selecting the externally provided control signal or an internally generated control signal. The controller may provide the selected control signal to a memory die. The memory device may determine whether it is operating in a first mode or a second mode, and select the externally provided control signal or the internally generated control signal based on the determination. The first mode may be a diagnostic mode in some cases. The controller may include a secure register whose value may impact or control the switching. An authenticated host device may direct the controller to write the value to the secure register.

Abstract: Methods, systems, and devices for compressed logical-to-physical mapping for sequentially stored data are described. A memory device may use a hierarchical set of logical-to-physical mapping tables for mapping logical block address generated by a host device to physical addresses of the memory device. The memory device may determine whether all of the entries of a terminal logical-to-physical mapping table are consecutive physical addresses. In response to determining that all of the entries contain consecutive physical addresses, the memory device may store a starting physical address of the consecutive physical addresses as an entry in a higher-level table along with a flag indicating that the entry points directly to data in the memory device rather than pointing to a terminal logical-to-physical mapping table. The memory device may, for subsequent reads of data stored in one or more of the consecutive physical addresses, bypass the terminal table to read the data.

Abstract: Disclosed in some examples are memory devices which include electrically programmable elements that specify values for one or more firmware search parameters for use by the bootloader in locating and reading the firmware object. The values of the firmware search parameters may be dynamically selected at manufacturing time by modifying the configuration of the electrically programmable elements by applying or not applying a specified voltage to the electrically programmable elements. In some examples, an electrically programmable element may include: a fuse, an anti-fuse, and/or an e-fuse.

Abstract: Methods, systems, and devices for configurable flush operation speed are described. Before executing a flush operation at a first portion of a cache including single-level cells (SLCs), a memory system may communicate parameters associated with data stored in the first portion of the cache to a host system. The host system may then identify another portion of the cache (e.g., including either SLCs or multi-level cells (MLCs)) for the flush operation based on the parameters and a speed of a flush operation associated with the other portions of the cache. The host system may indicate the identified portion of the cache to the memory system and the memory system may execute a flush operation at the first portion of the cache. For example, the memory system may write a subset of the data stored at the first portion of the cache to a second portion of the cache.

Abstract: Various embodiments provide for adjusting (or adapting) a program voltage step used to program a memory cell by a program algorithm after the program algorithm resumes from a suspension, where the program voltage step is adjusted (or adapted) based on one or more factors.

Abstract: Methods, systems, and devices for recovery of logical-to-physical (L2P) table information for a memory device are described. A memory system may detect an error in one or more pointers of the L2P table using an error detecting code that is uncorrectable using the code. The memory system may determine a set of candidate codewords for the set of bits, where each of the candidate codewords includes one or more corresponding candidate pointers, and check whether a candidate codeword is correct based on whether a logical address corresponding to a candidate pointer of the candidate codeword matches a logical address stored as metadata for a set of data at a physical address pointed to by the candidate pointer. The memory system may limit the set of candidate codewords or order the candidate codewords for evaluate to reduce a latency associated with identifying a correct candidate codeword.

Abstract: Methods, systems, and devices for techniques for failure management in memory systems are described. A memory system may include one or more non-volatile memory devices. A set of physical blocks of memory cells of the one or more non-volatile memory devices may be grouped into virtual blocks, where each physical block of a virtual may block may be within a different plane of the one or more non-volatile memory devices. The memory system may detect a failure within a physical block of a virtual block and may transfer data from the physical block to one or more other physical blocks within the same virtual block in response to detecting the failure.

Abstract: Methods, systems, and devices for secure self-purging memory partitions are described. Systems, techniques and devices are described herein in which data stored in a portion of a secure partition of memory may be removed from the secure partition. In some examples, a portion of secure partition may be allocated as self-purging memory such that data stored therein may be selectively removed in response to a logic address associated with the data being overwritten. In some cases, the data may be removed by programming the memory cells associated with the data to a specific voltage distribution. In some cases, the secure partition may include separate portions having different sets of operating parameters for access operations.

Abstract: Devices and techniques for NAND device mixed parity management are described herein. A first portion of data that corresponds to a first data segment and a second data segment—respectively defined with respect to a structure of a NAND device—are received. A parity value using the first portion of data and the second portion of data is computed and then stored for error correction operations.

Abstract: Methods, systems, and devices for overwriting at a memory system are described. A memory system may be configured to overwrite portions of a memory array with new data, which may be associated with omitting an erase operation. For example, write operations may be performed in accordance with a first demarcation configuration to store information at a portion of a memory array. A portion of a memory system may then determine to overwrite the portion of the memory array with different or updated information, which may include performing write operations in accordance with a second demarcation configuration. The second demarcation configuration may be associated with different cell characteristics for a one or more logic states, such as different distributions of stored charge or other cell property, different demarcation characteristics, different write operations, among other differences, which may support performing an overwrite operation without first performing an erase operation.

Abstract: Devices and techniques for performing copy-back operations in a memory device are disclosed herein. A trigger to perform a copy-back operation in relation to a section of data stored on the memory device can be detected. Circuitry of the memory device can then read the section of data at two voltage levels within a read window to obtain a first set of bits and a second set of bits respectively. The first and second sets of bits—which should be the same under normal circumstances—are compared to determine whether a difference between the sets of bits is beyond a threshold. If the difference is beyond a threshold, error correction is invoked prior to completion of the copy-back operation.

Abstract: Various embodiments provide for adjusting (or adapting) a program voltage step used to program a memory cell by a program algorithm after the program algorithm resumes from a suspension, where the program voltage step is adjusted (or adapted) based on one or more factors.

Abstract: Devices and techniques are disclosed herein for providing L2P information to a host device from a storage system, the L2P information comprising a response information unit having a limited size with separate categories of information including changed L2P region and associated subregion information, to-be-loaded L2P region and associated subregion information, and invalid L2P region and associated subregion information, wherein the information in the separate categories is based on the determined changes in the different L2P regions and the subregion information in each of the separate categories identifies specific locations of changed subregions with respect to one or more corresponding regions identified in the region information of a respective category of the response information unit.

Abstract: Methods, systems, and devices for overwriting at a memory system are described. A memory system may be configured to overwrite portions of a memory array with new data, which may be associated with omitting an erase operation. For example, write operations may be performed in accordance with a first demarcation configuration to store information at a portion of a memory array. A portion of a memory system may then determine to overwrite the portion of the memory array with different or updated information, which may include performing write operations in accordance with a second demarcation configuration. The second demarcation configuration may be associated with different cell characteristics for a one or more logic states, such as different distributions of stored charge or other cell property, different demarcation characteristics, different write operations, among other differences, which may support performing an overwrite operation without first performing an erase operation.