Abstract: Methods, systems, and devices for configurable flush operation speed are described. Before executing a flush operation at a first portion of a cache including single-level cells (SLCs), a memory system may communicate parameters associated with data stored in the first portion of the cache to a host system. The host system may then identify another portion of the cache (e.g., including either SLCs or multi-level cells (MLCs)) for the flush operation based on the parameters and a speed of a flush operation associated with the other portions of the cache. The host system may indicate the identified portion of the cache to the memory system and the memory system may execute a flush operation at the first portion of the cache. For example, the memory system may write a subset of the data stored at the first portion of the cache to a second portion of the cache.

Abstract: Methods, systems, and devices for usage level identification for memory device addresses are described. Systems, techniques, and devices are described herein in which a memory device may determine where to store data according to a level of usage of the data. The memory device may receive a write command indicating data to be written, a type of the data, and a logical address of a memory array for writing the data. The memory device may identify an entry associated with the logical address in a table that maps the logical address to a physical address of the memory array. The entry may include a field configured to maintain a level of usage for the logical address. The memory device may update the level of usage value according to a process and write the data to a physical address of the memory array based on the level of usage value.

Abstract: Methods, systems, and devices for secure self-purging memory partitions are described. Systems, techniques and devices are described herein in which data stored in a portion of a secure partition of memory may be removed from the secure partition. In some examples, a portion of secure partition may be allocated as self-purging memory such that data stored therein may be selectively removed in response to a logic address associated with the data being overwritten. In some cases, the data may be removed by programming the memory cells associated with the data to a specific voltage distribution. In some cases, the secure partition may include separate portions having different sets of operating parameters for access operations.

Abstract: Methods, systems, and devices for techniques for failure management in memory systems are described. A memory system may include one or more non-volatile memory devices. A set of physical blocks of memory cells of the one or more non-volatile memory devices may be grouped into virtual blocks, where each physical block of a virtual may block may be within a different plane of the one or more non-volatile memory devices. The memory system may detect a failure within a physical block of a virtual block and may transfer data from the physical block to one or more other physical blocks within the same virtual block in response to detecting the failure.

Abstract: Devices and techniques for disposable parity are described herein. First and second portions of data can be obtained, and respective parity values stored in adjacent memory locations. An entry mapping the respective parity values to the first and second portions of data is updated when the parity values are stored. If an error occurs when writing a portion of data, the mapping entry is used to retrieve the parity data to correct the error. Otherwise, the parity data is discarded.

Abstract: Systems and methods of memory operation involving dynamic adjustment of write policy based on performance needs are disclosed. In one embodiment, an exemplary method may comprise monitoring memory performance parameters related to a programming operation being scheduled, selecting a write policy based on the memory performance parameters monitored, executing a memory control process that is configured to switch between a first addressing scheme and a second addressing scheme, and programming a first superpage of the programming operation using the first addressing scheme and programing a second superpage of the programming operation using the second addressing scheme.

Abstract: Methods, systems, and devices for programming multi-level memory cells are described. After a first pass, an offset in the form of one or more offset pulses, may be applied to MLCs that are in a state of a higher level. The offset may be applied before or during a first part of a second pass. The offset may move the signals of the cells before the cells are finally programmed so as to avoid potential overlaps between the unprogrammed cells and cells that are programmed to the lower half of the final levels during the second pass. The offset cells may then be further moved to the other levels in the higher half of the final levels.

Abstract: Systems, apparatus, and methods are disclosed comprising receiving temperature information corresponding to a write temperature of at least one of multiple pages of non-volatile memory cells of a group of non-volatile memory cells, determining a statistical measure of temperature information for the group non-volatile memory cells using the received temperature information, and storing the determined statistical measure of temperature information for the group of non-volatile memory cells. The stored determined statistical measure of temperature information can be used to optimize or improve one or more storage system operations.

Abstract: Methods, systems, and devices for reduced pin status register are described. An apparatus may include a first memory die and a second memory die each coupled with a data bus. The apparatus may further include a controller coupled with the first memory die and the second memory die via the data bus that is configured to transmit a first command associated with a first operation to the first memory die and a second command associated with a second operation to the second memory die. The controller may further transmit a third command concurrently to the first memory die and the second memory die, the third command requesting a first status of the first operation and a second status of the second operation. The controller may receive the first status and the second status concurrently via the data bus from the first memory die and the second memory die.

Abstract: Methods, systems, and devices for error detection event mechanism are described. The memory system may identify a fault condition and transmit, to a host system, a message indicating a first indication that the fault condition exists at the memory system. In some cases, the memory system may set, in a register of the memory system, a second indication indicating a type of the fault condition based on identifying the fault condition. The memory system may perform a recovery procedure based on the first indication and the second indication.

Abstract: A variety of applications can include apparatus and/or methods that provide shared parity protection to data in memory devices of a memory system. Parity data of different data streams programmed into different blocks of one or more memory devices can be overlapped and wrapped into slots of a volatile memory arranged as a storage device for the parity data. A parity, map of parity-to-data reflecting the overlapping of the parity data can be maintained in the volatile memory along with the overlapped parity. The parity map can be updated as parity data is generated from further programming of the data streams. The parity contents of the volatile memory, including the parity map, can be transferred to a non-volatile memory in response to a determination of an occurrence of a transfer criterion. The parity contents flushed to the non-volatile memory can be used to allow correct data reconstruction in case of failures in programming.

Abstract: Methods, systems, and devices for reduced pin status register are described. An apparatus may include a first memory die and a second memory die each coupled with a data bus. The apparatus may further include a controller coupled with the first memory die and the second memory die via the data bus that is configured to transmit a first command associated with a first operation to the first memory die and a second command associated with a second operation to the second memory die. The controller may further transmit a third command concurrently to the first memory die and the second memory die, the third command requesting a first status of the first operation and a second status of the second operation. The controller may receive the first status and the second status concurrently via the data bus from the first memory die and the second memory die.

Abstract: A memory device comprises a memory array that includes memory cells and a memory controller operatively coupled to the memory array. The memory controller includes an oscillator circuit, internal memory, a processor core coupled to the oscillator circuit and the internal memory, and configured to load operating firmware during a boot phase of the memory device, voltage detector circuitry configured to detect a decrease in a circuit supply voltage of the memory controller during the boot phase, and logic circuitry configured to halt operation of the oscillator circuit and power down the processor core and the internal memory during the boot phase in a low power mode in response to detecting the decrease in the circuit supply voltage.

Abstract: Methods, systems, and devices for recovery of logical-to-physical (L2P) table information for a memory device are described. A memory system may detect an error in one or more pointers of the L2P table using an error detecting code that is uncorrectable using the code. The memory system may determine a set of candidate codewords for the set of bits, where each of the candidate codewords includes one or more corresponding candidate pointers, and check whether a candidate codeword is correct based on whether a logical address corresponding to a candidate pointer of the candidate codeword matches a logical address stored as metadata for a set of data at a physical address pointed to by the candidate pointer. The memory system may limit the set of candidate codewords or order the candidate codewords for evaluate to reduce a latency associated with identifying a correct candidate codeword.

Abstract: A memory device comprises a memory array that includes memory cells and a memory controller operatively coupled to the memory array. The memory controller includes an oscillator circuit, internal memory, a processor core coupled to the oscillator circuit and the internal memory, and configured to load operating firmware during a boot phase of the memory device, voltage detector circuitry configured to detect a decrease in a circuit supply voltage of the memory controller during the boot phase, and logic circuitry configured to halt operation of the oscillator circuit and power down the processor core and the internal memory during the boot phase in a low power mode in response to detecting the decrease in the circuit supply voltage.

Abstract: Methods, systems, and devices for unmap operation techniques are described. A memory system may include a volatile memory device and a non-volatile memory device. The memory system may receive a set of unmap commands that each include a logical block address associated with unused data. The memory system may determine whether one or more parameters associated with the set of unmap commands satisfy a threshold. If the one or more parameters satisfy the threshold, the memory system may select a first procedure for performing the set of unmap commands different from a second procedure (e.g., a default procedure) for performing the set of unmap commands and may perform the set of unmap commands using the first procedure. If the one or more parameters do not satisfy the threshold, the memory system may perform the set of unmap commands using the second procedure.

Abstract: Methods, systems, and devices for a memory access gate are described. A memory device may include a controller, memory dice, and a pad for receiving an externally provided control signal, such as a chip enable signal. The memory device may include a switching component for selecting the externally provided control signal or an internally generated control signal. The controller may provide the selected control signal to a memory die. The memory device may determine whether it is operating in a first mode or a second mode, and select the externally provided control signal or the internally generated control signal based on the determination. The first mode may be a diagnostic mode in some cases. The controller may include a secure register whose value may impact or control the switching. An authenticated host device may direct the controller to write the value to the secure register.

Abstract: Devices and techniques for an adjustable voltage drop detection threshold in a memory device are disclosed herein. A voltage drop detection threshold of a memory device is dynamically established. A power loss event is triggered when the supply voltage falls below the voltage drop detection threshold. An error parameter associated with performing multiple memory operations on the memory device is collected. The multiple memory operations are performed while applying a supply voltage at a second supply voltage level of the memory device which is less than a first supply voltage level established as a first operating voltage for the memory device. Determining whether the error parameter is below an allowable error threshold. In response to determining that the error parameter is below the allowable error threshold, the voltage drop detection threshold is established at a voltage level less than the first supply voltage level.

Abstract: Methods, systems, and devices for techniques for data programming are described for programming data to a memory system using a second programming mode associated with a higher error rate than a first programming mode. The second programming mode may include skipping one or more voltage calibration procedures included in the first programming mode, as well as performing one or more data verification procedures once a larger set of the data is programmed. The second programming mode may also include using a higher programming voltage pulse to program data and the programming pulse may last for a longer period of time than a programming pulse for the first programming mode. A memory system may receive data, determine to write the data to a memory device using the second programming mode, write the data using the second programming mode, and verify whether the data satisfies an error threshold.

Abstract: Systems and methods are disclosed comprising receiving L2P table information from a storage system over a communication interface, maintaining a host L2P table at a physical address using the received L2P table information, and providing a read command to the storage system for first data associated with a first LBA and a host L2P entry associated with the first data. The host L2P entry can include a physical address of the first LBA on the storage system according to the host L2P table and a physical address of a portion of the L2P table on the storage system associated with the first LBA. Control circuitry of the storage system can validate the physical address of the first LBA from the host L2P entry using the physical address of the portion of the host L2P table associated with the first LBA.