Abstract: A clock synchronization circuit receives an input clock signal along with current and future data signals. The clock synchronization circuit generates a phase shifted clock signal in response to the input clock signal, with the phase shifted clock signal having a phase shift relative to the input clock signal that is a function of the current and future data signals. The clock synchronization circuit may also generate a plurality of phase shifted clock signals, with each phase shifted clock signal having a respective phase shift that is a function of the current and future logic states of groups of the other data signals.

Abstract: A system is described which uses a burst access memory and a memory controller to anticipate the memory address to be used in future data read operations as requested by a microprocessor. Either the memory controller or the memory device initiates a burst read operation starting at a memory address generated thereby. The microprocessor can, therefore, wait to initiate a data read without suffering a time delay.

Abstract: The present invention allows for the reduction in power consumption of memory devices. A memory device in one embodiment prohibits address signal propagation on internal address buses based upon a function being performed by the memory. As such, some, all or none of the externally provided address signals are allowed to transition past address buffer circuitry.

Abstract: A lower current input buffer is used for waking up a plurality of higher-current buffers. The lower current buffer monitors a wake-up signal and, when present, enables the higher current buffers. A higher current buffer is used to detect the sleep mode and disable the higher current buffers. A delay circuit may be used to balance the propagation delay through the circuit.

Abstract: A block repair device is used in a Dynamic Random Access Memory (DRAM) having a primary array with a defective cell and a redundant array with a redundant row. The block repair device stores a block repair configuration that determines the dimensions (e.g., the number of rows and columns spanned) of a repair block. Routing circuitry is configured by the stored block repair configuration to output some row and column address bits from received row and column addresses in a selected ratio. Comparison circuitry compares the row and column address bits output by the routing circuitry with the address of the defective cell that defines the repair block. When a match occurs, the comparison circuitry implements a block repair by activating the redundant row and by causing data to be written to or read from the activated redundant row instead of the primary array.

Abstract: A multiphase charge pump including first and second phase charge pump circuits. Each of the first and second phase charge pump circuits includes a bootstrap capacitor. The bootstrap capacitors are switchingly connected by an equalization circuit that periodically transfers charge from a discharging capacitor to a charging capacitor, thereby reducing the charge that must be externally supplied to charge the charging capacitor.

Abstract: A programmable circuit and its method of operation are disclosed in which a transistor is used as a programmable element. The transistor may be programmed to one of two different gate threshold voltage values for operation. During reading of the transistor, a gate threshold voltage between the two values is applied and the status of the transistor as on or off is determined to determine the program state of the transistor. The program state of the transistor can be determined by a simple latch circuit.

Abstract: A block repair device is disclosed for use in a semiconductor memory having an array including a defective cell and a redundant row. The block repair device includes a set of fuses, antifuses, or flash EEPROM cells to store a block repair configuration that determines the dimensions (e.g., the number of rows and columns spanned) of a repair block used to repair the defective cell. Routing circuitry, such as multiplexer circuitry, in the block repair device is directed by the stored block repair configuration to output selected row and column address bits from received row and column addresses in a selected ratio. Comparison circuitry in the block repair device then compares the row and column address bits output by the routing circuitry with a stored portion of the address of the defective cell that defines the repair block. When a match occurs, the comparison circuitry implements a block repair by activating the redundant row and by causing data to be written to or read from the activated redundant row.

Abstract: A multiphase charge pump including first and second phase charge pump circuits. Each of the first and second phase charge pump circuits includes a bootstrap capacitor. The bootstrap capacitors are switchingly connected by an equalization circuit that periodically transfers charge from a discharging capacitor to a charging capacitor, thereby reducing the charge that must be externally supplied to charge the charging capacitor.

Abstract: An off chip driver impedance adjustment circuit includes a storage circuit adapted to receive and store a drive strength adjustment word. A counter circuit is coupled to the storage circuit to receive the drive strength adjustment word and develops a drive strength count responsive to the drive strength adjustment word. A programmable fuse code to preset the counter. An output driver circuit is coupled to the counter circuit to receive the drive strength count and is adapted to receive a data signal. The output driver circuit develops an output signal on an output responsive to the data signal and adjusts a drive strength as a function of the drive strength count.

Abstract: The present invention comprises memory devices, apparatuses and systems including multiple bit per cell memory cells and methods for operating same. The multiple bit per cell memory cells of the present invention have higher memory densities than conventional single bit per cell memory cells. Additionally, spare states in multiple bit per cell memory devices that remain unmapped to binary data bits may be advantageously used.

Abstract: A lower current input buffer is used for waking up a plurality of higher-current buffers. The lower current buffer monitors a wake-up signal and, when present, enables the higher current buffers. A higher current buffer is used to detect the sleep mode and disable the higher current buffers. A delay circuit may be used to balance the propagation delay through the circuit.

Abstract: A block repair device is used in a Dynamic Random Access Memory (DRAM) having a primary array with a defective cell and a redundant array with a redundant row. The block repair device stores a block repair configuration that determines the dimensions (e.g., the number of rows and columns spanned) of a repair block. Routing circuitry is configured by the stored block repair configuration to output some row and column address bits from received row and column addresses in a selected ratio. Comparison circuitry compares the row and column address bits output by the routing circuitry with the address of the defective cell that defines the repair block. When a match occurs, the comparison circuitry implements a block repair by activating the redundant row and by causing data to be written to or read from the activated redundant row instead of the primary array.

Abstract: A programmable circuit and its method of operation are disclosed in which a transistor is used as a programmable element. The transistor may be programmed to one of two different gate threshold voltage values for operation. During reading of the transistor, a gate threshold voltage between the two values is applied and the status of the transistor as on or off is determined to determine the program state of the transistor. The program state of the transistor can be determined by a simple latch circuit.

Abstract: A power saving circuit disables input buffers for command and address signals during an auto-refresh of a DRAM. The input buffers are re-enabled at the end of the auto-refresh in a manner that does not cause spurious commands to be generated. The power saving circuit prevents spurious commands by biasing internal command signals to a “no operation” command whenever the input buffers for the command signals are disabled. The DRAM may also be placed in a mode in which it automatically transitions to a low power precharge mode at the end of the auto-refresh to further reduce power consumed by the DRAM.

Abstract: A memory device with a segmented column architecture that allows for single bank repair across any two row blocks is disclosed. Multiple redundant columns are provided that have offset segment boundaries, i.e., a first redundant column is divided into four segments consisting of row block <0,1>, row block <2,3>, row block <4,5> and row block <6,7>, and a second redundant column is divided into four segments consisting of row block <1,2>, row block <3,4>, row block <5,6> and row block <0,7>. By offsetting the segment boundaries, the repair of the memory device can be optimized by repairing any two adjacent row blocks with only one column segment by selecting the appropriate redundant column segment.

Abstract: The present invention allows for the reduction in power consumption of memory devices. A memory device in one embodiment prohibits address signal propagation on internal address buses based upon a function being performed by the memory. As such, some, all or none of the externally provided address signals are allowed to transition past address buffer circuitry.

Abstract: A lower current input buffer is used for waking up a plurality of higher-current buffers. The lower current buffer monitors a wake-up signal and, when present, enables the higher current buffers. A higher current buffer is used to detect the sleep mode and disable the higher current buffers. A delay circuit may be used to balance the propagation delay through the circuit.

Abstract: The present invention comprises a memory array including multiple bit per cell memory cells and methods for operating same. The multiple bit per cell memory cells of the present invention have higher memory densities than conventional single bit per cell memory cells. Additionally, spare states in multiple bit per cell memory devices that remain unmapped to binary data bits may be advantageously used.

Abstract: A negative word line driver employs devices to maintain the potential difference between the active word line signal and the inactive word line signal while reducing the need for a significant negative voltage supply. One form of the negative word line driver employs an isolation element to couple the word line to ground when the inputs to the word line driver indicate the word line should not be active, while the word line is also coupled to the negative voltage supply. Another form of the form of the negative word line driver receives as inputs the voltages to be driven on the word line and can be implemented with fewer transistors but still allows the word line to be driven at a negative voltage with a reduced negative voltage supply.