Abstract: An embodiment of the present invention is a technique to heat spread at wafer level. A silicon wafer is thinned. A chemical vapor deposition diamond (CVDD) wafer processed. The CVDD wafer is bonded to the thinned silicon wafer to form a bonded wafer. Metallization is plated on back side of the CVDD wafer. The CVDD wafer is reflowed to flatten the back side.

Abstract: A method and apparatus for cooling an electronics chip with a cooling plate having integrated micro channels and manifold/plenum made in separate single-crystal silicon or low-cost polycrystalline silicon. Forming the microchannels in the cooling plate is more economical than forming the microchannels directly into the back of the chip being cooled. In some embodiments, the microchannels are high-aspect-ratio grooves formed (e.g., by etching) into a polycrystalline silicon cooling base, which is then attached to a cover (to contain the cooling fluid in the grooves) and to the back of the chip.

Abstract: A method and arrangement for dissipating heat from a localized area within a semiconductor die is presented. A semiconductor die is constructed and arranged to have at least one conduit portion therein. At least a portion of the conduit portion is proximate to the localized area. The conduit portion is at least partially filled with a heat-dissipating material. The conduit portion absorbs heat from the localized area and dissipates at least a portion of the heat away from the localized area. As such, thermal stress on the die is reduced, and total heat from the die is more readily dissipated.

Abstract: Apparatus and methods in accordance with the present invention utilize thermoelectric cooling (TEC) technology to provide enhanced power distribution and/or dissipation from a microelectronic die and/or microelectronic packages. Individual TEC devices are thermally interconnected with the microelectronic die in a number of placement configurations, including between the microelectronic die and the heat sink, on the integrated heat spreader (IHS) inner surface, and on the IHS outer surface. TEC devices comprise p- and n-type semiconducting material created using similar process as the microcircuits. The TEC devices are located in various regions within or on the microelectronic die, including directly below the microcircuits, on the backside of the microelectronic die, and on a separate substrate of microelectronic die material fabricated apart from the microelectronic die and subsequently thermally coupled to the backside of the microelectronic die.

Abstract: The method and apparatus of the present invention dissipate heat from an electronic device to provide an efficient and universally applied thermal solution for high heat generating electronic devices. The apparatus comprises an evaporator, a condenser, a heater and conduits. The evaporator, condenser, and conduits define a closed system that has an interior volume which is partially filled with a liquid coolant. The evaporator is thermally connected to an electronic device, such as a processor, and removes thermal energy from the processor by evaporating the liquid coolant. When the apparatus is oriented such that no liquid coolant is in contact with the evaporator, the heater applies thermal energy to the coolant until the coolant begins to boil. Boiling the liquid coolant causes bubbles to form within the liquid coolant. The volume of the bubbles generated by boiling raises the level of the liquid coolant within the closed system until the liquid coolant comes into contact with the evaporator.

Abstract: Apparatus and methods in accordance with the present invention provide a system to create turbulence inside microchannels of a microchannel cooling subsystem to disrupt vapor locks therein.

Abstract: A process is described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. A thin diamond layer is formed on a sacrificial wafer, and an integrated circuit is then formed on the thin diamond layer. The sacrificial wafer is then removed to expose the thin diamond layer. The resulting combination wafer is subsequently diced into individual dies. Each die has an exposed diamond layer forming the majority of the die and serving to conduct heat from the integrated circuit to a backside of the die, from where the heat can convect or be conducted away from the die.

Abstract: Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the die.

Abstract: A heat sink that dissipates heat from an electronic device. The heat sink includes a base that is adapted to be thermally coupled to the electronic device, and a fin that is thermally coupled to the base. The fin includes a first portion made from a first material and a second portion made from a second material. One edge of the first portion and an opposing edge of the second portion form at least one of a lap joint and a butt joint between the first portion and the second portion. In some forms, the first portion of the fin is a copper portion that is thermally coupled to a copper base to conduct thermal energy away from the base, and the second portion of the fin is aluminum.

Abstract: A heat-transfer device has a sealed vapor chamber with a phase-change fluid therein, and a thermoelectric cooling (TEC) element with a cooled side in thermal contact with the vapor chamber and a heated side in contact with heat-dissipation fins. The TEC element decreases the temperature of the vapor chamber and increases the temperature of the fins for improved efficiency. The vapor chamber is defined between concentrically positioned tubes, and a tunnel region is located within the inner tube. Additional TEC elements within the tunnel region further dissipate heat. In two-phase natural convection embodiments, TEC elements may further cool liquid returning to the heat source. Parallel heat dissipation paths may also be provided. In a two-phase forced convection embodiment, a TEC element may further cool liquid returning to the heat source, and additional TEC elements may be provided on the condenser. In some embodiments, active feedback controls the amount of energy transferred by a TEC element.

Abstract: A method, system, and apparatus are provided for applying and removing of a thermal interface material (TIM). According to one embodiment, a flow of heat is directed towards the TIM to soften the TIM, and the TIM is applied to a heat sink.

Abstract: Piezoelectric fan assemblies are provided to provide a conduction path and forced convection for space-limited electronic devices in accordance with embodiments of the present invention. The fan blade of a piezoelectric fan is thermally coupled to the heat source, such as, but not limited to, the fins of a heat sink, the condenser of the heat pipe, and to the thermal mass of a heat spreader or block. The high amplitude resonant vibration of the fan blade causes formation of a high velocity unidirectional flow stream. Maximum airflow occurs on axes of the piezoelectric fan's centerline, relative to both width and height dimensions. Air intake is above and below the swept out plane of the fan blade. The air flow provides forced convection for the fan blade and, secondarily, for the heat source.

Abstract: A heat-transfer device has a sealed vapor chamber with a phase-change fluid therein, and a thermoelectric cooling (TEC) element with a cooled side in thermal contact with the vapor chamber and a heated side in contact with heat-dissipation fins. The TEC element decreases the temperature of the vapor chamber and increases the temperature of the fins for improved efficiency. The vapor chamber is defined between concentrically positioned tubes, and a tunnel region is located within the inner tube. Additional TEC elements within the tunnel region further dissipate heat. In two-phase natural convection embodiments, TEC elements may further cool liquid returning to the heat source. Parallel heat dissipation paths may also be provided. In a two-phase forced convection embodiment, a TEC element may further cool liquid returning to the heat source, and additional TEC elements may be provided on the condenser. In some embodiments, active feedback controls the amount of energy transferred by a TEC element.

Abstract: A method and apparatus to minimize thermal impedance using copper on the die or chip backside. Some embodiments use deposited copper having a thickness chosen to complement a given chip thickness, in order to reduce or minimize wafer warpage. In some embodiments, the wafer, having a plurality of chips (e.g., silicon), is thinned (e.g., by chemical-mechanical polishing) before deposition of the copper layer, to reduce the thermal resistance of the chip. Some embodiments further deposit copper in a pattern of bumps, raised areas, or pads, e.g., in a checkerboard pattern, to thicken and add copper while reducing or minimizing wafer warpage and chip stress.

Abstract: A method and apparatus for cooling a portable computer system using a computer cooler with a cold plate that comes into contact with the portable computer system to transfer heat from the portable computer system to the environment surrounding the computer cooler.

Abstract: Apparatus and methods in accordance with the present invention provide self-contained, closed-loop microchannel/electrokinetic pump cooling systems that can be integrated into the microelectronic die and the integrated heat sink to provide microelectronic die cooling. Microchannel/electrokinetic pump cooling systems utilize active cooling technology to reduce thermal gradients and operating temperature of a microelectronic die. This system disclosed here will enhance heat dissipation and provide immediate cooling of localized hot spots within the microelectronic die. This will have the effect of reducing the microelectronic die temperature or spreading the heat internally within the microelectronic die depending on the layout of the microchannels.

Abstract: Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the die.

Abstract: Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the die.

Abstract: Apparatus and methods in accordance with the present invention provide self-contained, closed-loop microchannel/electrokinetic pump cooling systems that can be integrated into the microelectronic die and the integrated heat sink to provide microelectronic die cooling. Microchannel/electrokinetic pump cooling systems utilize active cooling technology to reduce thermal gradients and operating temperature of a microelectronic die. This system disclosed here will enhance heat dissipation and provide immediate cooling of localized hot spots within the microelectronic die. This will have the effect of reducing the microelectronic die temperature or spreading the heat internally within the microelectronic die depending on the layout of the microchannels.

Abstract: Apparatus and methods in accordance with the present invention utilize thermoelectric cooling (TEC) technology to provide enhanced power distribution and/or dissipation from a microelectronic die and/or microelectronic packages. Individual TEC devices are thermally interconnected with the microelectronic die in a number of placement configurations, including between the microelectronic die and the heat sink, on the integrated heat spreader (IHS) inner surface, and on the IHS outer surface. TEC devices comprise p- and n-type semiconducting material created using similar process as the microcircuits. The TEC devices are located in various regions within or on the microelectronic die, including directly below the microcircuits, on the backside of the microelectronic die, and on a separate substrate of microelectronic die material fabricated apart from the microelectronic die and subsequently thermally coupled to the backside of the microelectronic die.