Patents by Inventor Guobiao Zhang

Guobiao Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Large-area parking-monitoring system
    Patent number: 8698652
    Abstract: The present invention discloses a large-area parking-monitoring system. It comprises a plurality of smart-phone-like parking-monitoring devices. Each device monitors multiple parking spaces. The acquired parking occupancy data are transmitted to a parking-management server using cellular communication. The present invention takes advantage of the existing city-wide cellular network and therefore, can monitor parking city-wide at low cost.
    Type: Grant
    Filed: July 26, 2013
    Date of Patent: April 15, 2014
    Assignees: HangZhou HaiCun Information Technology Co., Ltd
    Inventor: Guobiao Zhang
  • Discrete Three-Dimensional Memory Comprising Dice with Different BEOL Structures
    Publication number: 20140036566
    Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least a peripheral-circuit component of the 3D-M is located on the peripheral-circuit die instead of the 3D-array die. The 3D-array die and the peripheral-circuit die have substantially different back-end-of-line (BEOL) structures, e.g. different number of BEOL layers, different number of interconnect layers, and/or different interconnect materials.
    Type: Application
    Filed: October 6, 2013
    Publication date: February 6, 2014
    Applicants: Guobiao Zhang, ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao ZHANG
  • Large Bit-Per-Cell Three-Dimensional Mask-Programmable Read-Only Memory
    Publication number: 20140015103
    Abstract: A large bit-per-cell three-dimensional mask-programmable read-only memory (3D-MPROMB) is disclosed. It can achieve large bit-per-cell (e.g. 4-bpc or more). 3D-MPROMB can be realized by adding resistive layer(s) or resistive element(s) to the memory cells.
    Type: Application
    Filed: September 16, 2013
    Publication date: January 16, 2014
    Applicants: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao ZHANG
  • Secure Three-Dimensional Mask-Programmed Read-Only Memory
    Publication number: 20130311790
    Abstract: A secure three-dimensional mask-programmed read-only memory (3Dm-ROMS) comprises a 3Dm-ROM for storing mass information, a non-mask-programmed memory (NMP) for storing at least a key and an encryption logic for encrypting selected data from said mass information with said key. Because different 3Dm-ROMS devices from a same 3Dm-ROMS batch are encrypted with different keys, compromising one device would not compromise others.
    Type: Application
    Filed: July 26, 2013
    Publication date: November 21, 2013
    Applicants: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao ZHANG
  • Large bit-per-cell three-dimensional mask-programmable read-only memory
    Patent number: 8564070
    Abstract: A large bit-per-cell three-dimensional mask-programmable read-only memory (3D-MPROMB) is disclosed. It can achieve large bit-per-cell (e.g. 4-bpc or more). 3D-MPROMB can be realized by adding resistive layer(s) or resistive element(s) to the memory cells.
    Type: Grant
    Filed: May 24, 2010
    Date of Patent: October 22, 2013
    Assignees: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao Zhang
  • Location-Based Prefetch and Participant-Based Prefetch
    Publication number: 20130267254
    Abstract: To reduce the mobile data usage, information associated with future events is prefetched via an inexpensive mass-data transfer link (e.g. Wi-Fi, Ethernet, or off-peak mobile broadband) and does not need to be fetched via an expensive mobile communication link (e.g. mobile broadband) during normal usage. Location-based prefetch and participant-based prefetch can leverage the existing infrastructures of location-based services (LBS) and social networking services (SNS). Because they provide a more reliable prediction of future events than those guessed from past events, schedule events managed by a calendaring application is primarily used to predict future events.
    Type: Application
    Filed: April 4, 2013
    Publication date: October 10, 2013
    Inventor: Guobiao ZHANG
  • Small-Grain Three-Dimensional Memory
    Publication number: 20130258740
    Abstract: The present invention discloses a small-grain three-dimensional memory (3D-MSG). Each of its memory cells comprises a thin-film diode with critical dimension no larger than 40 nm. The thin-film diode comprises at least a small-grain material, whose grain size G is substantially smaller than the diode size D. The small-grain material is preferably a nano-crystalline material or an amorphous material. The critical dimension f of the small-grain diode is smaller than the critical dimension F of the single-crystalline transistor.
    Type: Application
    Filed: March 20, 2013
    Publication date: October 3, 2013
    Applicants: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Mask-Programmed Read-Only Memory with Reserved Space
    Publication number: 20130227204
    Abstract: The present invention discloses a mask-ROM with reserved space (mask-ROMRS). For small content revision, the present invention salvages the original data-mask by writing the data-pattern of new content into a reserved mask-region which originally has no data-pattern.
    Type: Application
    Filed: March 18, 2013
    Publication date: August 29, 2013
    Applicants: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Three-Dimensional Memory Comprising an Integrated Intermediate-Circuit Die
    Publication number: 20130201743
    Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). It comprises at least a 3D-array die and at least an integrated intermediate-circuit die comprising both a read/write-voltage generator (VR/VW-generator) and an address/data translator (A/D-translator). The intermediate-circuit die performs voltage, address and/or data conversion between the 3D-M core region and the host. Discrete 3D-M support multiple 3D-array dies.
    Type: Application
    Filed: March 13, 2013
    Publication date: August 8, 2013
    Applicants: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Discrete Three-Dimensional Memory Comprising Off-Die Read/Write-Voltage Generator
    Publication number: 20130188415
    Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). Its 3D-M arrays are located on at least one 3D-array die, while its read/write-voltage generator (VR/VW-generator) is located on a separate peripheral-circuit die. The VR/VW-generator generates at least a read and/or write voltage to the 3D-array die. A single VR/VW-generator die can support multiple 3D-array dies.
    Type: Application
    Filed: March 6, 2013
    Publication date: July 25, 2013
    Applicants: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao Zhang
  • Discrete Three-Dimensional Memory Comprising Off-Die Address/Data Translator
    Publication number: 20130182483
    Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). Its 3D-M arrays are located on at least one 3D-array die, while its address-data translator (A/D-translator) is located on a separate peripheral-circuit die. The A/D-translator converts at least an address and/or data between logical space and physical space for the 3D-array die. A single A/D-translator die can support multiple 3D-array dies.
    Type: Application
    Filed: March 6, 2013
    Publication date: July 18, 2013
    Applicants: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao ZHANG
  • Discrete Three-Dimensional Memory
    Publication number: 20130056881
    Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). It is partitioned into at least two discrete dice: a memory-array die and a peripheral-circuit die. The memory-array die comprises at least a 3D-M array, which is built in a 3-D space. The peripheral-circuit die comprises at least a peripheral-circuit component, which is built on a 2-D plane. At least one peripheral-circuit component of the 3D-M is formed in the peripheral-circuit die instead of in the memory-array die. The array efficiency of the memory-array die can be larger than 70%.
    Type: Application
    Filed: August 22, 2012
    Publication date: March 7, 2013
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Three-Dimensional Printed Memory
    Publication number: 20130056798
    Abstract: As technology scales, the mask cost rises sharply. It was generally believed that three-dimensional mask-programmed read-only memory (3D-MPROM) would become economically un-viable. The present invention discloses a three-dimensional printed memory (3D-P). It is a type of 3D-MPROM and uses shared data-masks to print data. By forming the mask-patterns for a plurality of distinct mass-contents on a same data-mask, the share of the data-mask cost on each mass-content is significantly reduced. For mass publication, the minimum feature size of the 3D-P is preferably less than 45 nm.
    Type: Application
    Filed: August 8, 2012
    Publication date: March 7, 2013
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Three-Dimensional Writable Printed Memory
    Publication number: 20130058147
    Abstract: The present invention discloses a three-dimensional writable printed memory (3D-wP). It comprises at least a printed memory array and a writable memory array. The printed memory array stores contents data, which are recorded with a printing means; the writable memory array stores custom data, which are recorded with a writing means. The writing means is preferably direct-write lithography. To maintain manufacturing throughput, the total amount of custom data should be less than 1% of the total amount of content data.
    Type: Application
    Filed: August 30, 2012
    Publication date: March 7, 2013
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Self-Repair System and Method
    Publication number: 20130061108
    Abstract: The present invention discloses a self-repair system for three-dimensional mask-programmed read-only memory (3D-MPROM). Most of the 3D-MPROM data are not checked in the factory, but checked and repaired in the field. This self-repair system comprises a playback device with a re-writable memory (RWM). The RWM temporarily stores new contents. After a user receives a 3D-MPROM card storing the same contents, the playback device checks the 3D-MPROM data. When bad data are detected, the good data to replace the bad data are fetched from the RWM.
    Type: Application
    Filed: August 28, 2012
    Publication date: March 7, 2013
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Field-Repair System and Method
    Publication number: 20130061100
    Abstract: With increasing capacity, testing of three-dimensional mask-programmed read-only memory (3D-MPROM) becomes too time-consuming and expensive. Accordingly, the present invention discloses a field-repair system. Most of the 3D-MPROM data are not checked in the factory, but checked and repaired in the field. The field-repair system comprises a playback device with a communicating means. The playback device checks the 3D-MPROM data as they are read out. When bad data are detected, the good data to replace the bad data are fetched from a remote server with the communicating means. The remote server stores at least a copy of the content being read.
    Type: Application
    Filed: August 28, 2012
    Publication date: March 7, 2013
    Applicant: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao ZHANG
  • Three-Dimensional Offset-Printed Memory
    Publication number: 20130058146
    Abstract: The present invention discloses a three-dimensional offset-printed memory (3D-oP). Compared with a conventional three-dimensional mask-programmed read-only memory (3D-MPROM), it has a lower data-mask count and thereby a lower data-mask cost. The mask-patterns for different memory levels/bits-in-a-cell are merged onto a multi-region data-mask. At different printing steps, a wafer is offset by different values with respect to said data-mask. Accordingly, data-patterns are printed into different memory levels/bits-in-a-cell from a same data-mask.
    Type: Application
    Filed: August 30, 2012
    Publication date: March 7, 2013
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Hybrid Content-Distribution System and Method
    Publication number: 20130060880
    Abstract: The present invention discloses a hybrid content-distribution system. It uses two types of memory to distribute contents: re-writable memory (RWM) and three-dimensional mask-programmed read-only memory (3D-MPROM). During a publication period, new contents are transferred from a remote server to the RWM. At the end of the publication period, a user receives a 3D-MPROM, which stores a collection of the transferred contents. To make room for the contents to be released during the next publication period, the contents common to the 3D-MPROM and the RWM are deleted from the RWM afterwards.
    Type: Application
    Filed: August 28, 2012
    Publication date: March 7, 2013
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Imprinted Memory
    Publication number: 20130059425
    Abstract: The rising mask cost would make mask-ROM economically un-viable below 90 nm. The present invention discloses an imprinted memory, more particularly a three-dimensional imprinted memory (3D-iP). It uses imprint-lithography (also referred to as nano-imprint lithography, or NIL) to record data. The data-template used by imprint-lithography is much less expensive than the data-mask used by photo-lithography.
    Type: Application
    Filed: August 31, 2012
    Publication date: March 7, 2013
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Secure Three-Dimensional Mask-Programmed Read-Only Memory
    Publication number: 20120210438
    Abstract: Among all classes of three-dimensional read-only memory (3D-ROM), mask-programmed 3D-ROM (3Dm-ROM) is suitable for mass information dissemination. A secure 3Dm-ROM (3Dm-ROMS) comprises a 3Dm-ROM for storing mass information, a non-mask-programmed memory (NMP) for storing at least a key and an encryption logic. It provides strong copyright protection by writing different keys into different NMPs and encrypting the 3Dm-ROM contents with these different keys.
    Type: Application
    Filed: February 15, 2011
    Publication date: August 16, 2012
    Inventor: Guobiao ZHANG