Patents by Inventor Guobiao Zhang

Guobiao Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Three-dimensional one-time-programmable memory comprising off-die read/write-voltage generator
    Patent number: 9508395
    Abstract: The present invention discloses a three-dimensional one-time-programmable memory (3D-OTP) comprising an off-die read/write-voltage generator (VR/VW-generator). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least a VR/VW-generator of the 3D-OTP arrays is located on the peripheral-circuit die instead of the 3D-array die. The VR/VW-generator generates at least a read voltage and/or a write voltage different from a supply voltage.
    Type: Grant
    Filed: March 6, 2016
    Date of Patent: November 29, 2016
    Assignees: HangZhou HaiCun Information Technology Co., Ltd.
    Inventor: Guobiao Zhang
  • Night detection of parked vehicles
    Patent number: 9475429
    Abstract: To detect parked vehicles at night, the present invention discloses night-detection device and method. The night-detection device comprises a moving-vehicle sensor and a parked-vehicle sensor. It uses the light beam from a passing-by vehicle to detect parked vehicles.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: October 25, 2016
    Assignees: ChengDu HaiCun IP Technology LLC
    Inventors: Guobiao Zhang, Andrew T. Shih, Allison P. Shih
  • Three-Dimensional Vertical Memory Comprising Dice with Different Interconnect Levels
    Publication number: 20160293584
    Abstract: The present invention discloses a three-dimensional vertical memory (3D-MV). It comprises at least a 3D-array die and at least a peripheral-circuit die. The 3D-array die comprises a plurality of vertical memory strings. The number of interconnect levels in the peripheral-circuit die is more than the number of interconnect levels in the 3D-array die, but substantially less than the number of memory cells on each of the vertical memory strings in the 3D-array die.
    Type: Application
    Filed: June 16, 2016
    Publication date: October 6, 2016
    Applicant: HangZhou HaiCun Information Technology Co. Ltd.
    Inventor: Guobiao ZHANG
  • Night Parking Detection
    Publication number: 20160259984
    Abstract: The present invention discloses a night parking-monitoring device. It monitors the state change of a parking space at night by tracking at least a light of a vehicle.
    Type: Application
    Filed: October 22, 2015
    Publication date: September 8, 2016
    Applicant: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao ZHANG
  • Night Detection of Parked Vehicles
    Publication number: 20160257251
    Abstract: To detect parked vehicles at night, the present invention discloses night-detection device and method. The night-detection device comprises a moving-vehicle sensor and a parked-vehicle sensor. It uses the light beam from a passing-by vehicle to detect parked vehicles.
    Type: Application
    Filed: March 3, 2015
    Publication date: September 8, 2016
    Applicant: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao ZHANG
  • Discrete three-dimensional memory
    Patent number: 9396764
    Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least an off-die peripheral-circuit component of the 3D-M arrays is located on the peripheral-circuit die instead of the 3D-array die. The 3D-array die and the peripheral-circuit die have substantially different back-end-of-line (BEOL) structures.
    Type: Grant
    Filed: October 15, 2015
    Date of Patent: July 19, 2016
    Assignees: HangZhou HaiCun Information Technology Co., Ltd.
    Inventor: Guobiao Zhang
  • Solid-State Optical Drive and Solid-State Storage Server
    Publication number: 20160203097
    Abstract: The present invention discloses a content delivery network (CDN) based on solid-state optical drive (SSO). Like a solid-state (hard) drive (SSD) is a solid-state version of a hard-disk drive (HDD), the SSO is a solid-state version of CD-tower. Because an SSO stores a content library (CL) at a reasonable cost, the CL can be deployed at the edges of the CDN instead of only at the origin.
    Type: Application
    Filed: January 12, 2016
    Publication date: July 14, 2016
    Applicant: HangZhou HaiCun Information Technology Co., Ltd.
    Inventor: Guobiao ZHANG
  • Discrete Three-Dimensional One-Time-Programmable Memory
    Publication number: 20160189792
    Abstract: The present invention discloses a discrete three-dimensional one-time-programmable memory (3D-OTP). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least a peripheral-circuit component of the 3D-OTP arrays is located on the peripheral-circuit die instead of the 3D-array die. The 3D-array die and the peripheral-circuit die have substantially different back-end-of-line (BEOL) structures.
    Type: Application
    Filed: March 6, 2016
    Publication date: June 30, 2016
    Applicant: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao ZHANG
  • Discrete Three-Dimensional One-Time-Programmable Memory
    Publication number: 20160189791
    Abstract: The present invention discloses a discrete three-dimensional one-time-programmable memory (3D-OTP). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least a peripheral-circuit component of the 3D-OTP arrays is located on the peripheral-circuit die instead of the 3D-array die. The 3D-array die and the peripheral-circuit die have substantially different back-end-of-line (BEOL) structures.
    Type: Application
    Filed: March 6, 2016
    Publication date: June 30, 2016
    Applicant: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao ZHANG
  • Three-Dimensional One-Time-Programmable Memory Comprising Off-Die Read/Write-Voltage Generator
    Publication number: 20160189754
    Abstract: The present invention discloses a three-dimensional one-time-programmable memory (3D-OTP) comprising an off-die read/write-voltage generator (VR/VW-generator). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least a VR/VW-generator of the 3D-OTP arrays is located on the peripheral-circuit die instead of the 3D-array die. The VR/VW-generator generates at least a read voltage and/or a write voltage different from a supply voltage.
    Type: Application
    Filed: March 6, 2016
    Publication date: June 30, 2016
    Applicant: HangZhou HaiCun Information Technology Co., Ltd.
    Inventor: Guobiao ZHANG
  • Discrete three-dimensional vertical memory comprising off-die address/data-translator
    Patent number: 9305604
    Abstract: The present invention discloses a discrete three-dimensional vertical memory (3D-MV). It comprises at least a 3D-array die and at least an A/D-translator die. The 3D-array die comprises a plurality of vertical memory strings. At least an address/data (A/D)-translator for the 3D-array die is located on the A/D-translator die instead of the 3D-array die. The 3D-array die and the A/D-translator die have substantially different back-end-of-line (BEOL) structures.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: April 5, 2016
    Assignees: HangZhou HaiCun Information Technology Co., Ltd.
    Inventor: Guobiao Zhang
  • Discrete three-dimensional vertical memory
    Patent number: 9305605
    Abstract: The present invention discloses a discrete three-dimensional vertical memory (3D-MV). It comprises at least a 3D-array die and at least a peripheral-circuit die. The 3D-array die comprises a plurality of vertical memory strings. At least an off-die peripheral-circuit component of the 3D-MV arrays is located on the peripheral-circuit die instead of the 3D-array die. The 3D-array die and the peripheral-circuit die have substantially different back-end-of-line (BEOL) structures.
    Type: Grant
    Filed: October 15, 2015
    Date of Patent: April 5, 2016
    Assignees: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao Zhang
  • Discrete three-dimensional vertical memory comprising off-die voltage generator
    Patent number: 9299390
    Abstract: The present invention discloses a discrete three-dimensional vertical memory (3D-MV). It comprises at least a 3D-array die and at least a voltage-generator die. The 3D-array die comprises a plurality of vertical memory strings. At least a voltage generator for the 3D-array die is located on the voltage-generator die instead of the 3D-array die. The 3D-array die and the voltage-generator die have substantially different back-end-of-line (BEOL) structures.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: March 29, 2016
    Assignees: HangZhou HaiCun Informationa Technology Co., Ltd.
    Inventor: Guobiao Zhang
  • Three-Dimensional Mask-Programmed Read-Only Memory With Reserved Space
    Publication number: 20160085671
    Abstract: The present invention discloses a 3D-MPROM with reserved space (3D-MPROMRS). It comprise a reserved space, which contains no data in the original 3D-MPROMRS but new contents in the updated 3D-MPROMRS. For a small content revision, the data-mask can be salvaged. For a large content revision, the present invention further discloses a 3D-MPROM with reserved level (3D-MPROMRL). It comprises at least a reserved level, which is absent in the original 3D-MPROMRL but present in the updated 3D-MPROMRL.
    Type: Application
    Filed: September 20, 2014
    Publication date: March 24, 2016
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Small-grain three-dimensional memory
    Patent number: 9293509
    Abstract: The present invention discloses a small-grain three-dimensional memory (3D-MSG). Each of its memory cells comprises a thin-film diode with critical dimension no larger than 40 nm. The thin-film diode comprises at least a small-grain material, whose grain size G is substantially smaller than the diode size D. The small-grain material is preferably a nano-crystalline material or an amorphous material. The critical dimension f of the small-grain diode is smaller than the critical dimension F of the single-crystalline transistor.
    Type: Grant
    Filed: February 5, 2015
    Date of Patent: March 22, 2016
    Assignees: HangZhou HaiCun Information Technology Co., Ltd.
    Inventors: Guobiao Zhang, Bin Yu, HongYu Yu, Jin He, JinFeng Kang, ZhiWei Liu
  • Discrete Three-Dimensional Memory
    Publication number: 20160035394
    Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least an off-die peripheral-circuit component of the 3D-M arrays is located on the peripheral-circuit die instead of the 3D-array die. The 3D-array die and the peripheral-circuit die have substantially different back-end-of-line (BEOL) structures.
    Type: Application
    Filed: October 15, 2015
    Publication date: February 4, 2016
    Applicant: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao ZHANG
  • Discrete Three-Dimensional Vertical Memory
    Publication number: 20160035395
    Abstract: The present invention discloses a discrete three-dimensional vertical memory (3D-MV). It comprises at least a 3D-array die and at least a peripheral-circuit die. The 3D-array die comprises a plurality of vertical memory strings. At least an off-die peripheral-circuit component of the 3D-MV arrays is located on the peripheral-circuit die instead of the 3D-array die. The 3D-array die and the peripheral-circuit die have substantially different back-end-of-line (BEOL) structures.
    Type: Application
    Filed: October 15, 2015
    Publication date: February 4, 2016
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Three-Dimensional Offset-Printed Memory
    Publication number: 20160027791
    Abstract: The present invention discloses a three-dimensional offset-printed memory (3D-oP). Compared with a conventional three-dimensional mask-programmed read-only memory (3D-MPROM), it has a lower data-mask count and thereby a lower data-mask cost. The mask-patterns for different memory levels/bits-in-a-cell are merged onto a multi-region data-mask. At different printing steps, a wafer is offset by different values with respect to said data-mask. Accordingly, data-patterns are printed into different memory levels/bits-in-a-cell from a same data-mask.
    Type: Application
    Filed: October 7, 2015
    Publication date: January 28, 2016
    Applicant: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao ZHANG
  • Three-Dimensional Printed Memory
    Publication number: 20160027790
    Abstract: As technology scales, the mask cost rises sharply. The present invention discloses a three-dimensional printed memory (3D-P). It uses shared data-masks to print data. Because a shared data-mask does not contain the mask-patterns for identical mass-contents, the share of the data-mask cost on each mass-content is significantly reduced. For mass publication, the minimum feature size of the 3D-P is preferably less than 45 nm.
    Type: Application
    Filed: October 6, 2015
    Publication date: January 28, 2016
    Inventor: Guobiao ZHANG
  • Discrete Three-Dimensional Memory Comprising Off-Die Address/Data Translator
    Publication number: 20150332734
    Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). Its 3D-M arrays are located on at least one 3D-array die, while its address/data translator (A/D-translator) is located on a separate peripheral-circuit die. The A/D-translator converts at least an address and/or data between logical space and physical spaces for the 3D-array die. A single A/D-translator die can support multiple 3D-array dies.
    Type: Application
    Filed: July 19, 2015
    Publication date: November 19, 2015
    Inventor: Guobiao ZHANG